ON Semiconductor NTMFS5C628N User Manual

NTMFS5C628N

MOSFET - Power, Single

N-Channel

60 V, 3.0 mW, 150 A

Features

• Small Footprint (5x6 mm) for Compact Design

• Low R

• Low Q

• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (T

Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain

Current R
(Notes 1, 3)

Power Dissipation

(Note 1)

R

q

JC

Continuous Drain
Current R
(Notes 1, 2, 3)

Power Dissipation

(Notes 1, 2)

R

q

JA

Pulsed Drain Current
Operating Junction and Storage Temperature

Range
Source Current (Body Diode) I
Single Pulse Drain−to−Source Avalanche

Energy (I
Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)

1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm

3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.

to Minimize Conduction Losses

DS(on)

and Capacitance to Minimize Driver Losses

G

= 25°C unless otherwise noted)

J

Parameter

q

JC

q

JA

L(pk)

= 9 A)

Steady

State

Steady

State

TA = 25°C, t

Parameter Symbol Value Unit

TC = 25°C

TC = 100°C 110

TC = 25°C

TC = 100°C 56

TA = 25°C

TA = 100°C 20

TA = 25°C

TA = 100°C 1.9

= 10 ms

p

Symbol Value Unit

DSS

GS

I

D

P

D

I

D

P

D

I

DM

TJ, T

stg

S

E

AS

T

L

R

q

JC

R

q

JA

2

, 2 oz. Cu pad.

60 V
±20 V
150

110

28

3.7

900 A

−55 to
+175

120 A
565 mJ

260 °C

1.3
40

A

W

A

W

°C

°C/W

www.onsemi.com

V

(BR)DSS

60 V

G (4)

R

MAX ID MAX

DS(ON)

3.0 mW @ 10 V

D (5)

S (1,2,3)

N−CHANNEL MOSFET

150 A

MARKING
DIAGRAM

1

DFN5

(SO−8FL)

CASE 488AA

STYLE 1

5C628N = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability

S
S
S

G

D

D

5C628N

AYWZZ

D

D

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.

© Semiconductor Components Industries, LLC, 2019

August, 2019 − Rev. 0

1 Publication Order Number:

NTMFS5C628N/D

NTMFS5C628N

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

J

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage

V

V

Temperature Coefficient
Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

(BR)DSS

T

J

DSS

GSS

VGS = 0 V, ID = 250 mA

/

VGS = 0 V,

V

= 60 V

DS

TJ = 25°C 10

TJ = 125°C 250

VDS = 0 V, VGS = 20 V 100 nA

60 V

22

mV/°C

mA

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage
Threshold Temperature Coefficient V
Drain−to−Source On Resistance R

V

GS(TH)

GS(TH)/TJ

DS(on)

Forward Transconductance g
Gate Resistance R

FS

VGS = VDS, ID = 135 mA

VGS = 10 V ID = 27 A 2.3 3.0

VDS = 15 V, ID = 27 A 110 S

G

TA = 25°C 1.0

2.0 4.0 V

−7.7 mV/°C
mW

W

CHARGES AND CAPACITANCES

Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
Plateau Voltage V

C

ISS
OSS
RSS

G(TOT)

G(TH)

GS
GD
GP

VGS = 0 V, f = 1 MHz, VDS = 30 V

VGS = 10 V, VDS = 30 V; ID = 27 A

2630
1680

13
34

8

12.8

3.8

4.8 V

pF

nC

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

t

d(ON)

Rise Time t
Turn−Off Delay Time t

d(OFF)

Fall Time t

r

f

VGS = 10 V, VDS = 30 V,

= 27 A, RG = 2.5 W

I

D

16

5.8
25

6.2

ns

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t
Charge Time t
Discharge Time t
Reverse Recovery Charge Q

V

SD

VGS = 0 V,

IS = 27 A

RR

a
b
RR

VGS = 0 V, dIs/dt = 100 A/ms,

I

= 14 A

S

TJ = 25°C 0.8 1.2

TJ = 125°C 0.67

64
32
32

75 nC

V

ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

5. Switching characteristics are independent of operating junction temperatures.

www.onsemi.com

2

NTMFS5C628N

TYPICAL CHARACTERISTICS

150
135
120
105

90
75
60
45

, DRAIN CURRENT (A)

D

I

30
15

0

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

12

10

8

6

VGS = 10 V to 6 V

210

34

5.0 V

4.5 V

4.0 V

TJ = 25°C

= 27 A

I

D

150

120

90

60

, DRAIN CURRENT (A)

D

30

I

5

0

8
7
6
5
4

TJ = 25°C

TJ = 25°C

TJ = 125°C

30

421

TJ = −55°C

5

6

4

2

, DRAIN−TO−SOURCE RESISTANCE (mW)

0

57

DS(on)

R

VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

VGS = 10 V

, NORMALIZED DRAIN−TO−

SOURCE RESISTANCE

DS(on)

R

2.0

1.5

1.0

0.5

= 27 A

I

D

50 175

TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 5. On−Resistance Variation with

Temperature

3
2
1

, DRAIN−TO−SOURCE RESISTANCE (mW)

0

10986

DS(on)

R

20 60 100

VGS = 10 V

120 14080400

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

1M

100K

10K

1K

, LEAKAGE (nA)

100

DSS

I

10

1

15012510075250−25−50

5

15 25 35

TJ = 175°C

TJ = 125°C

TJ = 85°C

TJ = 25°C

5545

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

www.onsemi.com

3