ON Semiconductor NJW3281G, NJW1302G Service Manual

NJW3281G (NPN)

ces

NJW1302G (PNP)

Preferred Devi

Complementary NPN-PNP
Silicon Power Bipolar
Transistors

The NJW3281G and NJW1302G are power transistors for high

power audio, disk head positioners and other linear applications.

Features

•Exceptional Safe Operating Area

•NPN/PNP Gain Matching within 10% from 50 mA to 5 A

•Excellent Gain Linearity

•High BVCEO

•High Frequency

•These are Pb-Free Devices

Benefits

•Reliable Performance at Higher Powers

•Symmetrical Characteristics in Complementary Configurations

•Accurate Reproduction of Input Signal

•Greater Dynamic Range

•High Amplifier Bandwith

Applications

•High-End Consumer Audio Products

♦Home Amplifiers
♦Home Receivers

•Professional Audio Amplifiers

♦Theater and Stadium Sound Systems
♦Public Address Systems (PAs)

MAXIMUM RATINGS (T

Rating Symbol Value Unit

Collector-Emitter Voltage V

Collector-Base Voltage V

Emitter-Base Voltage V

Collector-Emitter Voltage - 1.5 V V

Collector Current - Continuous

Collector Current - Peak (Note 1)

Base Current - Continuous I

Total Power Dissipation @ TC = 25°C
Derate Above 25°C

Operating and Storage Junction
Temperature Range

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.

= 25°C unless otherwise noted)

J

CEO

CBO

EBO

CEX

I

C

B

P

D

TJ, T

stg

R

q

JC

R

q

JA

250 Vdc

250 Vdc

5.0 Vdc

250 Vdc

15
30

1.6 Adc

200

1.43

-āā65 to +150

0.625 °C/W

40 °C/W

Adc

W

W/°C

°C

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15 AMPERES

COMPLEMENTARY

SILICON POWER TRANSISTORS

250 VOLTS 200 WATTS

MARKING
DIAGRAM

NJWxxxG

AYWW

TO-3P

CASE 340AB

STYLES 1,2,3

xxxx = 0281 or 0302
G = Pb-Free Package
A = Assembly Location
Y = Year
WW = Work Week

ORDERING INFORMATION

Device Package Shipping

NJW3281G TO-3P

(Pb-Free)

NJW1302G TO-3P

(Pb-Free)

Preferred devices are recommended choices for future use
and best overall value.

30 Units/Rail

30 Units/Rail

© Semiconductor Components Industries, LLC, 2008

January, 2008 - Rev. 0

1 Publication Order Number:

NJW3281/D

NJW3281G (NPN) NJW1302G (PNP)

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

C

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector-Emitter Sustaining Voltage

(IC = 100 mAdc, IB = 0)

Collector Cutoff Current

(V

= 250 Vdc, IE = 0)

CB

Emitter Cutoff Current

(VEB = 5 Vdc, IC = 0)

SECOND BREAKDOWN

Second Breakdown Collector with Base Forward Biased

(VCE = 50 Vdc, t = 1 s (non-repetitive)

ON CHARACTERISTICS

DC Current Gain

(IC = 100 mAdc, VCE = 5 Vdc)
(IC = 1 Adc, VCE = 5 Vdc)
(IC = 3 Adc, VCE = 5 Vdc)
(IC = 5 Adc, VCE = 5 Vdc)
(IC = 8 Adc, VCE = 5 Vdc)

Collector-Emitter Saturation Voltage

(IC = 8 Adc, IB = 0.8 Adc)

Base-Emitter On Voltage

(IC = 8 Adc, VCE = 5 Vdc)

DYNAMIC CHARACTERISTICS

Current-Gain - Bandwidth Product

(IC = 1 Adc, VCE = 5 Vdc, f

= 1 MHz)

test

Output Capacitance

(VCB = 10 Vdc, IE = 0, f

= 1 MHz)

test

V

CEO(sus)

I

CBO

I

EBO

I

S/b

h

FE

V

CE(sat)

V

BE(on)

f

C

250 - -

Vdc

mAdc

- - 50

mAdc

- - 5

Adc

4 - -

­75
75
75
60
45

-

-

-

-

-

150
150
150

-

-

Vdc

- 0.4 0.6

Vdc

- - 1.5

T

ob

- 30 -

- - 600

MHz

pF

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2

60

TJ = 25°C

f

= 1 MHz

test

50

40

30

20

PRODUCT (MHz)

, CURRENT BANDWIDTH

10

Ta u

f

NJW3281G (NPN) NJW1302G (PNP)

TYPICAL CHARACTERISTICS

PNP NJW1302G NPN NJW3281G

VCE = 10 V

5 V

, CURRENT BANDWIDTH

f

80

60

40

PRODUCT (MHz)

20

Ta u

TJ = 25°C

f

= 1 MHz

test

VCE = 10 V

5 V

0

0.1 1 10

IC, COLLECTOR CURRENT (A)

Figure 1. Typical Current Gain

Bandwidth Product

1000

VCE = 5 V

125°C

100

, DC CURRENT GAIN

FE

h

10

0.01 0.1 1 10 100

25°C

-30°C

IC, COLLECTOR CURRENT (A)

Figure 3. DC Current Gain

1000

VCE = 20 V

0

0.1 1 10

1000

100

, DC CURRENT GAIN

FE

h

10

0.1 1 10 100

1000

IC, COLLECTOR CURRENT (A)

Figure 2. Typical Current Gain

Bandwidth Product

VCE = 5 V

125°C

25°C

-30°C

IC, COLLECTOR CURRENT (A)

Figure 4. DC Current Gain

VCE = 20 V

125°C

100

, DC CURRENT GAIN

FE

h

10

0.01 0.1 1 10 100

25°C

-30°C

IC, COLLECTOR CURRENT (A)

Figure 5. DC Current Gain

100

, DC CURRENT GAIN

FE

h

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3

125°C

25°C

-30°C

10

0.1 1 10 10

IC, COLLECTOR CURRENT (A)

Figure 6. DC Current Gain