ON Semiconductor NJL3281D, NJL3281DG, NJL1302D, NJL1302DG Service Manual

NJL3281D (NPN)
NJL1302D (PNP)

Complementary
ThermalTrakt Transistors

The ThermalTrak family of devices has been designed to eliminate
thermal equilibrium lag time and bias trimming in audio amplifier
applications. They can also be used in other applications as transistor
die protection devices.

Features

• Thermally Matched Bias Diode

• Instant Thermal Bias Tracking

• Absolute Thermal Integrity

• High Safe Operating Area

• Pb−Free Packages are Available*

Benefits

• Eliminates Thermal Equilibrium Lag Time and Bias Trimming

• Superior Sound Quality Through Improved Dynamic Temperature

Response

• Significantly Improved Bias Stability

• Simplified Assembly

♦ Reduced Labor Costs
♦ Reduced Component Count

• High Reliability

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BIPOLAR POWER

TRANSISTORS

15 AMP, 260 VOLT, 200 WATT

TO−264, 5 LEAD

CASE 340AA

STYLE 1

MARKING DIAGRAM

NJLxxxxDG

AYYWW

Thermal Trak

SCHEMATIC

Applications

• High−End Consumer Audio Products

♦ Home Amplifiers
♦ Home Receivers

• Professional Audio Amplifiers

♦ Theater and Stadium Sound Systems
♦ Public Address Systems (PAs)

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

NJLxxxxD =Device Code

G = Pb−Free Package
A =Assembly Location
YY =Year
WW =Work Week

ORDERING INFORMATION

Device Package Shipping

NJL3281D TO−264 25 Units / Rail
NJL3281DG

NJL1302D
NJL1302DG

xxxx = 3281 or 1302

TO−264

(Pb−Free)

TO−264
TO−264

(Pb−Free)

25 Units / Rail

25 Units / Rail

25 Units / Rail

© Semiconductor Components Industries, LLC, 2006

June, 2006 − Rev. 2

1 Publication Order Number:

NJL3281D/D

NJL3281D (NPN) NJL1302D (PNP)

MAXIMUM RATINGS (T

= 25°C unless otherwise noted)

J

Rating Symbol Value Unit

Collector−Emitter Voltage V
Collector−Base Voltage V
Emitter−Base Voltage V
Collector−Emitter Voltage − 1.5 V V

CEO
CBO
EBO
CEX

Collector Current − Continuous

− Peak (Note 1)
Base Current − Continuous I
Total Power Dissipation @ TC = 25°C

P

Derate Above 25°C
Operating and Storage Junction Temperature Range TJ, T
DC Blocking Voltage V
Average Rectified Forward Current I

F(AV)

I

C

B

D

stg

R

260 Vdc
260 Vdc

5 Vdc

260 Vdc

15
25

1.5 Adc

200

1.43

− 65 to +150
200 V

1.0 A

Adc

W

W/°C

°C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case

R

q

JC

0.625 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.

ATTRIBUTES

Characteristic Value

ESD Protection Human Body Model

Machine Model

Flammability Rating UL 94 V−0 @ 0.125 in

>8000 V

> 400 V

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2

NJL3281D (NPN) NJL1302D (PNP)

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

C

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

(IC = 100 mAdc, IB = 0)

Collector Cutoff Current

(VCB = 260 Vdc, IE = 0)

Emitter Cutoff Current

(VEB = 5 Vdc, IC = 0)

ON CHARACTERISTICS

DC Current Gain

(IC = 500 mAdc, VCE = 5 Vdc)
(IC = 1 Adc, VCE = 5 Vdc)
(IC = 3 Adc, VCE = 5 Vdc)
(IC = 5 Adc, VCE = 5 Vdc)
(IC = 8 Adc, VCE = 5 Vdc)

Collector−Emitter Saturation Voltage

(IC = 10 Adc, IB = 1 Adc)

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 1 Adc, VCE = 5 Vdc, f

= 1 MHz)

test

Output Capacitance

(VCB = 10 Vdc, IE = 0, f

= 1 MHz)

test

Maximum Instantaneous Forward Voltage (Note 2)

(iF = 1.0 A, TJ = 25°C)
(iF = 1.0 A, TJ = 150°C)

Maximum Instantaneous Reverse Current (Note 2)

(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 150°C)

Maximum Reverse Recovery Time

(iF = 1.0 A, di/dt = 50 A/ms)

2. Diode Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.

V

CEO(sus)

I

CBO

I

EBO

h

V

CE(sat)

f

C

v

i

t

FE

T

R

rr

260 −

Vdc

mAdc

− 50
mAdc

− 5

75
75
75
75
45

150
150
150
150

−
Vdc

− 3

MHz

30 −

ob

F

− 600

1.1

pF

V

0.93
mA

10

100
100 ns

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