Datasheet NJG1302V Datasheet (JRC)

NJG1302V

MEDIUM POWER AMPLIFIER GaAs MMIC

GG2

NJG1302V

nGENERAL DESCRIPTION nPACKAGE OUTLINE
NJG1302V is a GaAs MMIC designed mainly for the
final stage power amplifier of Japanese PHS handset,
but suitable digital wireless phone and wireless LAN.
This amplifier has wide variable gain capability of 20dB
dynamic range.
NJG1302V has input and output matching circuits
internally and features low voltage and high efficiency
operation. The output power of 21dBm is easily available
with very low distortion.

nFEATURES

lVoltage gain under low distortion
lLow voltage operation +3.0V typ.

lLow current consumption 195mA typ. @f= 1.9GHz, P
lHigh gain 32dB
lLow distortion(ACP) -60dBc typ. @f= 1.9GHz, P
lReduction of Parasitic oscillation
lInput and output internal matching circuit
lPackage SSOP14

= 21dBm

out

= 21dBm

OUT

nPIN CONFIGURATION

V Type

(Top View)

1

2

4

5

6

7

14

13

123

11

10

9

8

Pin Connection

1. RF

2. GND

3. V

4. GND

5. V

6. GND

7. V

IN

GG1

CONT

8. RF

9. GND

10. V

11. GND

12. V

13. GND

14. GND

OUT

DD1

DD1

NJG1302V

nABSOLUTE MAXIMUM RATINGS

DD1,VDD2

GG1,VGG2

PARAMETER SYMBOL CONDITIONS RATINGS UNITS
Drain Voltage V
Gate Voltage V
Gain Control Voltage V
Input Power P
Power Dissipation P
Operating Temperature T
Storage Temperature T

CONT

in

D
opr
stg

nELECTRICAL CHARACTERISTICS

PARAMETER SYMBOL CONDITONS MIN TYP MAX UNITS
Operating Frequency freq V
Drain Voltage V
Gate Voltage V
Idle Current *1 I
Operating Current *1 I
Gate Current *2 I
Gain Control Terminal

Current
Gain Control Voltage V

DD1,2
GG1,2

idle
DD
GG

I

CONT

CONT

Small Signal Gain Gain V
Gain Flatness G

Gain Control Range G
Pout at 1dB

Compression point
Adjacent Channel

Leakage Power 1

Adjacent Channel
Leakage Power 2

Harmonics P

P

P

P

flat

CONT

-1dB

acp

acp

SP

Input VSWR VSWRiV
Load VSWR Tolerance -

(Ta=+25oC, Zs=Zl=50Ω)

V

GG1,VGG2

V

DD1,VDD2

V

DD1,VDD2

V

DD1,VDD2

=-0.9V 6 V
=-3.0V -4 V
=-3.0V -4 V
=-3.0V, V

GG1,VGG2

=-0.9V 3 dBm

At on PCB board 600 mW

-30 ~ +85 °C

-40 ~ +150 °C

(Ta=+25 oC, Zs=Zl=50Ω)

=3.0V 1.89 - 1.92 GHz

DD1,2

2.9 3.0 5.0 V

V

=3.0V, I

DD1,2

V

=3.0V, No RF Signal 175 180 185 mA

DD1,2

V

=3.0V, P

DD1,2

V

=3.0V, P

DD1,2

V

=3.0V, P

DD1,2

-2.0<V

CONT

=180mA -1.25 -0.9 -0.6 V

idle

=21dBm 180 195 205 mA

out

=21dBm -150 -70 - uA

out

=21dBm

out

<0.0V

-5 -2 - uA

-2.0 - 0 V

DD1,2

V

DD1,2

V

CONT

I

idle

V

DD1,2

V

DD1,2

offset=600kHz,

1

=3.0V, I
=3.0V, I
=-2~0V, V

=180mA

=3.0V 22 23 - dBm
=3.0V, P

=180mA 29 32 35 dB

idle

=180mA 0 0.5 1.0 dB

idle

=3.0V

DD1,2

=21dBm

out

18 20 23 dB

- -60 -55 dBc
Pin;π/4 DQPSK
V

DD1,2

offset=900kHz,

2

=3.0V, P

=21dBm

out

- -65 -60 dBc
Pin; π/4 DQPSK

V

=3.0V, P

DD1,2

=3.0V - - 2.2

DD1,2

V

=3.0V, P

DD1,2

Load VSWR=4:1,All Phase

=21dBm - -35 -30 dBc

out

=21dBm

out

Parasitic Oscillation for

Fundamental Signal Level

:<-60dBc

*1:V
*2:V

Terminal V

DD1

Terminal V

GG1

Terminal Total Current

DD2

Terminal Total Current

GG2

NJG1302V

nTYPICAL CHARACTERISTICS

(d

Gain vs. Frequency vs. Control Voltage

(VDD=3.0V, IDD=180mA, Ta=25oC)

40

30

P

vs. Operating Current vs. V

acp

(P

=21dBm, V

out

-50

V

=0V

CONT

-55

=0V, f=1.9GHz, Ta=25oC)

cont

DD

20

Gain (dB)

10

0

-10

0.0 1.0 2.0 3.0
Frequency f (GHz)

-1.0V

-1.4V

Bc)

-60

(dBc)

acp

acp

P

P

-65

-70
150 160 170 180 190 200 210

Operating Current IDD (mA)

VDD=2.9V

4.0V

Output Power vs. Input Power

vs. Control Voltage

(VDD=3.0V, I

26

24

22

(dBm)

out

20

18

16

Output Power P

14

=180mA, f=1.9GHz, Ta=25oC)

idle

V

=0V

CONT

3.0V

3.3V

5.0V

-1V -1.2V

-1.4V

12

-20 -15 -10 -5 0 5 10

P

vs. Input Power vs. Control Voltage

acp

(VDD=3.0V, I

-20

-30

-40

-50

(dBc)

acp

-60

P

-70

-80

-90

-20 -15 -10 -5 0 5 10

Input Power Pin (dBm)

=180mA, f=1.9GHz, Ta=25oC)

idle

V

=0V

CONT

Input Power Pin (dBm)

-1V

-1.2V

-1.4V

NJG1302V

nTYPICAL CHARACTERISTICS

Gain vs PHS Band Frequency

Operating Current, P

(VDD=3.0V, I

250

(mA)

200

DD

150

Operating Current I

=180mA, f=1.9GHz, Pin=-11dBm, Ta=25oC)

idle

vs. Control Voltage

acp

I

DD

P

acp

-20

-40

-60

(dBc)

acp

P

Gain, P

(VDD=3.0V, V

34

33

32

Gain (dB)

31

30

-40 -20 0 20 40 60 80

vs. Ambient Temperature

acp

cont

=0V, I

=180mA, P

idle

Gain

P

acp

Ambient Temperature Ta (oC)

=21dBm, f=1.9GHz)

out

-55

-60

-65

(dBc)

acp

P

Operating Current vs. Ambient Temperature

(VDD=3.0V, V

190

185

(mA)

DD

180

175

Operating Current I

cont

=0V, I

=180mA, P

idle

=21dBm, f=1.9GHz)

out

100

-2 -1.5 -1 -0.5 0 0.5
Control Voltage V

CONT

(V)

vs. Control Voltage

50

40

30

Gain (dB)

20

10

0

1.89 1.9 1.91 1.92

(VDD=3.0V, IDD=180mA, Ta=25oC)

Frequency f (GHz)

V

CONT

=0V

-1.0V

-1.4V

-80

170

-40 -20 0 20 40 60 80
Ambient Temperature Ta (oC)

Gain, Operating Current vs. V

(V

=0V, I

cont

Gain (dB)

=180mA@VDD=3.6V, P

idle

33

32

31

30

29

2.5 3 3.5 4 4.5 5
Drain Voltage VDD (V)

=21dBm, f=1.9GHz, Ta=25oC)

out

I

DD

Gain

DD

240

220

(mA)

DD

200

Operatin Current I

180

160

NJG1302V

nTYPICAL CHARACTERISTICS

Output Power,Total Current vs. Input Power

( V

=3V, V

DD2,3

25

20

(dBm)

15

out

10

Output Power P

5

0

-25 -20 -15 -10 -5 0 5 10

=0V, f=1.9GHz, Ta=25oC)

CONT

Output Power

@I

=80mA

idle

60mA

40mA

20mA

Input Power Pin (dBm)

60mA

40mA

20mA

Total Current

@I

=80mA

idle

350

300

250

200

150

Total Current (mA)

100

50

0

|S11| , |S22| vs. Frequency

(VDD=3.0V, IDD=180mA, V

20

10

=0V, Ta=25oC)

cont

Output Power, P.A.E. vs. Input Power

( V

=3V, V

DD2,3

25

20

(dBm)

15

out

10

Output Power P

5

0

-25 -20 -15 -10 -5 0 5 10

=0V, f=1.9GHz, Ta=25oC )

CONT

Output Power

@I

=80mA

idle

Input Power Pin (dBm)

60mA

40mA

@I

idle

60mA

40mA

20mA

P.A.E.

=80mA

20mA

100

80

60

40

20

0

Power Added Efficiency (%)

| (dB)

22

| , |S

11

|S

0

-10

-20

-30
0 1 2 3

Frequency f (GHz)

|S22|

|S11|

W

All adjacent channel leakage power used in these evaluations are those of 600kHz offset from

fundamental wave at PHS operating condition(π/4QPSK moduration)

NJG1302V

nRECOMMENDED CIRCUIT

1uF

PCB : FR4 t=0.2mm

4.7uF

RFin

GG

V

(-0.5~-1.2V)
IDD=0 @VGG <-2V

V

(0~-2V)

=

cont

C

C

1

C

3

2

C

2

C

1

C

1

nRECOMMENDED PCB DESIGN

GND

GND

VDD1

GND

VDD2

GND

RFout

14

13

12

11

10

DD

V

C

2

L

1

C

2

9

87

(3.0~5.0V)

C

1

C

C

3

1

RFout

1

RFin
GND2

3

VGG1

4

GND

5

cont

V

6

GND

VGG2

C1: 1000pF
C2: 33pF
C3: 1uF
L1: 4.7nH

The reflow method is recommended for this device to attach on PCB

1uF

CAPACITOR
MURATA GRM39 Series

INDUCTOR
TAIYO-YUDEN HK1608 Series

NJG1302V

nAPPLICATION CIRCUIT (NEGATIVE VOLTAGE GENERATOR)

-3.0V

+3.0V

500kΩ

1MΩ1MΩ(3kΩ)

(7kΩ)

NJU7001

NJU7660

-

8 7 6 5

1 2 3 4

+ -

10uF
+

10kΩTrimmer Resistance

VGG
(-0.9V Typ.)

V

CONT

(0~+2V)

10uF

+V

2

3

7

6
out

4

-V

V

cont

(0~-2V)

NJG1302V

nPACKAGE OUTLINE (SSOP14)

• To waste this product, please obey the relating law of your country.

with care to avoid these damages .

[CAUTION]

Lead material : Copper
Lead surface finish : Solder plating
Molding material : Epoxy resin
UNIT : mm
Weight :66mg

Cautions on using this product

This product contains Gallium-Arsenide (GaAs) which is a harmful material.

• Do NOT eat or put into mouth.

• Do NOT dispose in fire or break up this product.

• Do NOT chemically make gas or powder with this product.

This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle

The specifications on this databook are only
given for information , without any guarantee
as regards either mistakes or omissions. The
application circuits in this databook are
described only to show representative usages
of the product and not intended for the
guarantee or permission of any right including
the industrial rights.