ON Semiconductor NIF5002N Technical data

NIF5002N

Preferred Device

Self−Protected FET
with Temperature and
Current Limit

42 V, 2.0 A, Single N−Channel, SOT−223

HDPlust devices are an advanced series of power MOSFETs
which utilize ON Semiconductors latest MOSFET technology process
to achieve the lowest possible on−resistance per silicon area while
incorporating smart features. Integrated thermal and current limits
work together to provide short circuit protection. The devices feature
an integrated Drain−to−Gate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
Gate−to−Source Clamp.

Features

• Current Limitation

• Thermal Shutdown with Automatic Restart

• Short Circuit Protection

• I

Specified at Elevated Temperature

DSS

• Avalanche Energy Specified

• Slew Rate Control for Low Noise Switching

• Overvoltage Clamped Protection

• Pb−Free Packages are Available

Applications

• Lighting

• Solenoids

• Small Motors

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V

(BR)DSS

(Clamped)

42 V

*Max current limit value is dependent on input

condition.

Gate
Input

ESD Protection

1

R

DS(ON)

165 mW @ 10 V

Overvoltage

Protection

R

G

Temperature

Limit

4

2

3

TYP

Current

Limit

SOT−223

CASE 318E

STYLE 3

I

D

2.0 A*

Drain

Current

Sense

Source

MAX

MARKING DIAGRAM

M

PWR

MAXIMUM RATINGS (T

Drain−to−Source Voltage Internally Clamped V
Drain−to−Gate Voltage Internally Clamped

= 1.0 MW)

(R

G

Gate−to−Source Voltage V
Continuous Drain Current I
Power Dissipation @ TA = 25°C (Note 1)

Operating Junction and Storage Temperature TJ, T

Single Pulse Drain−to−Source Avalanche Energy

(V

= 32 V, VG = 5.0 V, IPK = 1.0 A,

DD

L = 300 mH, R

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

© Semiconductor Components Industries, LLC, 2006

April, 2006 − Rev. 7

G(ext)

= 25°C unless otherwise noted)

J

Rating

@ T

= 25°C (Note 2)

A

= 25°C (Note 3)

@ T

T

= 25 W)

Symbol Value Unit

42 V
42 V

"14 V

Internally Limited

1.1

1.7

8.9

−55 to

stg

150
150 mJ

W

°C

1 Publication Order Number:

V

DSS
DGR

P

E

GS

D

D

AS

GATE

DRAIN

SOURCE

A = Assembly Location
Y = Year
W = Work Week
5002N = Specific Device Code
G = Pb−Free Package

(Note: Microdot may be in either location)

1

4

5002N G

AYW

2

G

3

DRAIN

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.

Preferred devices are recommended choices for future use
and best overall value.

NIF5002N/D

NIF5002N

THERMAL CHARACTERISTICS

Characteristic

Junction−to−Ambient − Steady State (Note 1)
Junction−to−Ambient − Steady State (Note 2)
Junction−to−Tab − Steady State (Note 3)

1. Surface−mounted onto min pad FR4 PCB, (2 oz. Cu, 0.06″ thick).

2. Surface−mounted onto 2″ sq. FR4 board (1″ sq., 1 oz. Cu, 0.06″ thick).

3. Surface−mounted onto min pad FR4 PCB, (2 oz. Cu, 0.06″ thick).

Symbol

R

q

JA

R

q

JA

R

q

JT

Value Unit

114

°C/W
72
14

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise noted)

J

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage
(Note 4)

Zero Gate Voltage Drain Current I

Gate Input Current I

V

(BR)DSS

DSS

GSSF

VGS = 0 V, ID = 10 mA

VGS = 0 V, VDS = 32 V

VDS = 0 V, VGS = 5.0 V 50 100

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage
Gate Threshold Temperature Coefficient V
Static Drain−to−Source On−Resistance R

V

GS(th)

GS(th)/TJ

DS(on)

VGS = VDS, ID = 150 mA

VGS = 10 V, ID = 1.7 A

VGS = 5.0 V, ID = 1.7 A

VGS = 5.0 V, ID = 0.5 A

Source−Drain Forward On Voltage V

SD

VGS = 0 V, IS = 7.0 A 1.0 V

SWITCHING CHARACTERISTICS

Turn−on Time
Turn−off Time t
Slew Rate On dVDS/dt

Slew−Rate Off dVDS/dt

t

d(on)

d(off)

VGS = 10 V, VDD = 12 V,

= 2.5 A, RL = 4.7 W,

I

D

(10% Vin to 90% ID)

on

off

RL = 4.7 W, Vin = 0 to 10 V,

V

= 12 V, 70% to 50%

DD

RL = 4.7 W, Vin = 0 to 10 V,

V

= 12 V, 50% to 70%

DD

SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 5)

Current Limit I

LIM

VDS = 10 V, VGS = 5.0 V

VDS = 10 V, VGS = 10 V

Temperature Limit (Turn−off) T
Temperature Limit (Circuit Reset) T
Temperature Limit (Turn−off) T
Temperature Limit (Circuit Reset) T

LIM(off)
LIM(on)
LIM(off)
LIM(on)

VGS = 5.0 V
VGS = 5.0 V

VGS = 10 V
VGS = 10 V

ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Electro−Static Discharge Capability ESD

Human Body Model (HBM) 4000

Machine Model (MM) 400

4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

5. Fault conditions are viewed as beyond the normal operating range of the part.

TJ = 25°C 42 46 55

TJ = 150°C 40 45 55

TJ = 25°C 0.25 4.0

TJ = 150°C 1.1 20

1.3 1.8 2.2 V

4.0 6.0 −mV/°C

TJ = 25°C 165 200

TJ = 150°C 305 400

TJ = 25°C 195 230

TJ = 150°C 360 460

TJ = 25°C 190 230

TJ = 150°C 350 460

20 30
65 100

1.2

0.5

TJ = 25°C

TJ = 150°C

TJ = 25°C

TJ = 150°C

3.1 4.7 6.3

2.0 3.2 4.3

3.8 5.7 7.6

2.8 4.3 5.7
150 175 200
135 160 185
150 165 185
135 150 170

V

mA

mA

mW

ms

V/ms

A

°C

V

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