NIF5002N
Preferred Device
Self−Protected FET
with Temperature and
Current Limit
42 V, 2.0 A, Single N−Channel, SOT−223
HDPlust devices are an advanced series of power MOSFETs
which utilize ON Semiconductors latest MOSFET technology process
to achieve the lowest possible on−resistance per silicon area while
incorporating smart features. Integrated thermal and current limits
work together to provide short circuit protection. The devices feature
an integrated Drain−to−Gate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
Gate−to−Source Clamp.
Features
• Current Limitation
• Thermal Shutdown with Automatic Restart
• Short Circuit Protection
• I
Specified at Elevated Temperature
DSS
• Avalanche Energy Specified
• Slew Rate Control for Low Noise Switching
• Overvoltage Clamped Protection
• Pb−Free Packages are Available
Applications
• Lighting
• Solenoids
• Small Motors
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V
(BR)DSS
(Clamped)
42 V
*Max current limit value is dependent on input
condition.
Gate
Input
ESD Protection
1
R
DS(ON)
165 mW @ 10 V
Overvoltage
Protection
R
G
Temperature
Limit
4
2
3
TYP
Current
Limit
SOT−223
CASE 318E
STYLE 3
I
D
2.0 A*
Drain
Current
Sense
Source
MAX
MARKING DIAGRAM
M
PWR
MAXIMUM RATINGS (T
Drain−to−Source Voltage Internally Clamped V
Drain−to−Gate Voltage Internally Clamped
= 1.0 MW)
(R
G
Gate−to−Source Voltage V
Continuous Drain Current I
Power Dissipation @ TA = 25°C (Note 1)
Operating Junction and Storage Temperature TJ, T
Single Pulse Drain−to−Source Avalanche Energy
(V
= 32 V, VG = 5.0 V, IPK = 1.0 A,
DD
L = 300 mH, R
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 7
G(ext)
= 25°C unless otherwise noted)
J
Rating
@ T
= 25°C (Note 2)
A
= 25°C (Note 3)
@ T
T
= 25 W)
Symbol Value Unit
42 V
42 V
"14 V
Internally Limited
1.1
1.7
8.9
−55 to
stg
150
150 mJ
W
°C
1 Publication Order Number:
V
DSS
DGR
P
E
GS
D
D
AS
GATE
DRAIN
SOURCE
A = Assembly Location
Y = Year
W = Work Week
5002N = Specific Device Code
G = Pb−Free Package
(Note: Microdot may be in either location)
1
4
5002N G
AYW
2
G
3
DRAIN
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
NIF5002N/D
NIF5002N
THERMAL CHARACTERISTICS
Characteristic
Junction−to−Ambient − Steady State (Note 1)
Junction−to−Ambient − Steady State (Note 2)
Junction−to−Tab − Steady State (Note 3)
1. Surface−mounted onto min pad FR4 PCB, (2 oz. Cu, 0.06″ thick).
2. Surface−mounted onto 2″ sq. FR4 board (1″ sq., 1 oz. Cu, 0.06″ thick).
3. Surface−mounted onto min pad FR4 PCB, (2 oz. Cu, 0.06″ thick).
Symbol
R
q
JA
R
q
JA
R
q
JT
Value Unit
114
°C/W
72
14
ELECTRICAL CHARACTERISTICS (T
Parameter
= 25°C unless otherwise noted)
J
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(Note 4)
Zero Gate Voltage Drain Current I
Gate Input Current I
V
(BR)DSS
DSS
GSSF
VGS = 0 V, ID = 10 mA
VGS = 0 V, VDS = 32 V
VDS = 0 V, VGS = 5.0 V 50 100
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Gate Threshold Temperature Coefficient V
Static Drain−to−Source On−Resistance R
V
GS(th)
GS(th)/TJ
DS(on)
VGS = VDS, ID = 150 mA
VGS = 10 V, ID = 1.7 A
VGS = 5.0 V, ID = 1.7 A
VGS = 5.0 V, ID = 0.5 A
Source−Drain Forward On Voltage V
SD
VGS = 0 V, IS = 7.0 A 1.0 V
SWITCHING CHARACTERISTICS
Turn−on Time
Turn−off Time t
Slew Rate On dVDS/dt
Slew−Rate Off dVDS/dt
t
d(on)
d(off)
VGS = 10 V, VDD = 12 V,
= 2.5 A, RL = 4.7 W,
I
D
(10% Vin to 90% ID)
on
off
RL = 4.7 W, Vin = 0 to 10 V,
V
= 12 V, 70% to 50%
DD
RL = 4.7 W, Vin = 0 to 10 V,
V
= 12 V, 50% to 70%
DD
SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 5)
Current Limit I
LIM
VDS = 10 V, VGS = 5.0 V
VDS = 10 V, VGS = 10 V
Temperature Limit (Turn−off) T
Temperature Limit (Circuit Reset) T
Temperature Limit (Turn−off) T
Temperature Limit (Circuit Reset) T
LIM(off)
LIM(on)
LIM(off)
LIM(on)
VGS = 5.0 V
VGS = 5.0 V
VGS = 10 V
VGS = 10 V
ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Electro−Static Discharge Capability ESD
Human Body Model (HBM) 4000
Machine Model (MM) 400
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Fault conditions are viewed as beyond the normal operating range of the part.
TJ = 25°C 42 46 55
TJ = 150°C 40 45 55
TJ = 25°C 0.25 4.0
TJ = 150°C 1.1 20
1.3 1.8 2.2 V
4.0 6.0 −mV/°C
TJ = 25°C 165 200
TJ = 150°C 305 400
TJ = 25°C 195 230
TJ = 150°C 360 460
TJ = 25°C 190 230
TJ = 150°C 350 460
20 30
65 100
1.2
0.5
TJ = 25°C
TJ = 150°C
TJ = 25°C
TJ = 150°C
3.1 4.7 6.3
2.0 3.2 4.3
3.8 5.7 7.6
2.8 4.3 5.7
150 175 200
135 160 185
150 165 185
135 150 170
V
mA
mA
mW
ms
V/ms
A
°C
V
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2
NIF5002N
4
4
0
TYPICAL PERFORMANCE CURVES
VDS ≥ 10 V
3
2
6 V
5 V
4 V
3.8 V
3.6 V
TJ = 25°C
10 V
7
9 V
6
8 V
7 V
5
4
3
3.4 V
2
DRAIN CURRENT (AMPS)
D,
I
1
0
0
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
DS
Figure 1. On−Region Characteristics
1.0
0.9
0.8
0.7
2
3.2 V
3.0 V
2.8 V
2.6 V
31
ID = 1.7 A
T
= 25°C
J
1
DRAIN CURRENT (AMPS)
D,
I
25°C
0
4
12
1.5
2.5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.3
TJ = 25°C
0.25
VGS = 5 V
0.2
0.6
0.5
0.4
0.3
0.2
0.1
DRAIN−TO−SOURCE RESISTANCE (W)
DS(on),
R
0
35
210
46
798
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
0.15
VGS = 10 V
0.1
0.05
DRAIN−TO−SOURCE RESISTANCE (W)
0
2345
DS(on),
R
ID, DRAIN CURRENT (AMPS)
100°C
TJ = −55°C
3
3.5
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.5
ID = 1.7 A
V
= 5 V
GS
2
1.5
1
DRAIN−TO−SOURCE
0.5
DS(on),
R
RESISTANCE (NORMALIZED)
0
−50 0−25 25
75
50 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
100 125
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10000
1000
100
, LEAKAGE (nA)
DSS
I
10
1
10 20
3
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
VGS = 0 V
TJ = 150°C
TJ = 100°C
30
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
4
NIF5002N
TYPICAL PERFORMANCE CURVES
10
VGS = 0 V
T
= 25°C
J
1
0.1
, SOURCE CURRENT (AMPS)
S
I
0.01
0.70.5 1
V
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
SD
0.80.60.4
Figure 7. Diode Forward Voltage vs. Current
1.0
D = 0.5
0.2
0.1
0.1
0.05
0.9
10
VGS = 20 V
SINGLE PULSE
TC = 25°C
1.0
1 ms
10 ms
0.1
R
, DRAIN CURRENT (AMPS)
D
I
0.01
0.1 10 100
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
DS
LIMIT
DS(on)
THERMAL LIMIT
PACKAGE LIMIT
1.0
dc
Figure 8. Maximum Rated Forward Biased
Safe Operating Area
0.02
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
0.01
SINGLE PULSE
0.01
1.0E−03 1.0E−02 1.0E−01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
t, TIME (s)
Figure 9. Thermal Response
ORDERING INFORMATION
Device Package Shipping
NIF5002NT1 SOT−223 1000 / Tape & Reel
NIF5002NT1G SOT−223
1000 / Tape & Reel
(Pb−Free)
NIF5002NT3 SOT−223 4000 / Tape & Reel
NIF5002NT3G SOT−223
4000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
†
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4
NIF5002N
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE L
0.08 (0003)
H
e1
E
A1
D
b1
4
123
e
E
b
q
A
SOLDERING FOOTPRINT*
2.0
0.079
3.8
0.15
L1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIMAMIN NOM MAX MIN
A1 0.02 0.06 0.10 0.001
b 0.60 0.75 0.89 0.024
b1 2.90 3.06 3.20 0.115
c 0.24 0.29 0.35 0.009
D 6.30 6.50 6.70 0.249
E 3.30 3.50 3.70 0.130
e 2.20 2.30 2.40 0.087
e1
L1 1.50 1.75 2.00 0.060
H
E
C
q
STYLE 3:
PIN 1. GATE
MILLIMETERS
1.50 1.63 1.75 0.060
0.85 0.94 1.05 0.033
6.70 7.00 7.30 0.264
0° 10° 0° 10°
− −
2. DRAIN
3. SOURCE
4. DRAIN
INCHES
NOM MAX
0.064 0.068
0.002 0.004
0.030 0.035
0.121 0.126
0.012 0.014
0.256 0.263
0.138 0.145
0.091 0.094
0.037 0.041
0.069 0.078
0.276 0.287
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
SCALE 6:1
ǒ
inches
mm
Ǔ
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
HDPlus is a trademark of Semiconductor Components Industries, LLC (SCILLC).
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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For additional information, please contact your
local Sales Representative.
NIF5002N/D
5
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