ON Semiconductor NCV8415 User Manual

Self-Protected Low Side Driver with In-Rush Current Management

NCV8415

The NCV8415 is a three terminal protected Low−Side Smart Discrete FET. The protection features include Delta Thermal Shutdown, overcurrent, overtemperature, ESD and integrated Drain−to−Gate clamping for overvoltage protection. The device also offers fault indication via the gate pin. This device is suitable for harsh automotive environments.

Features

• Short−Circuit Protection with In−Rush Current Management

• Delta Thermal Shutdown

• Thermal Shutdown with Automatic Restart

• Overvoltage Protection

• Integrated Clamp for Overvoltage Protection and Inductive

Switching

• ESD Protection

• dV/dt Robustness

• Analog Drive Capability (Logic Level Input)

• NCV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101 Grade 1 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

Typical Applications

• Switch a Variety of Resistive, Inductive and Capacitive Loads

• Can Replace Electromechanical Relays and Discrete Circuits

• Automotive / Industrial

Drain

Gate Input

ESD Protection

Overvoltage

Protection

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V

DSS

(Clamped)

42 V

SOT−223

CASE 318E

STYLE 3

R

TYP

DS(ON)

80 mW @ 10 V

DPAK

CASE 369C

STYLE 2

MARKING DIAGRAMS

4

AYW

8415G

G

1

23

SOT−223

1

AYWW

2

NCV

8415G

3

DPAK

A = Assembly Location Y = Year W, WW = Work Week G or G = Pb−Free Package

(Note: Microdot may be in either location)

4

MAX

I

D

(Limited)

11 A

Pin Marking Information

1 = Gate 2 = Drain 3 = Source 4 = Drain

Temperature

Limit

Current

Limit

Figure 1. Block Diagram

January, 2021 − Rev. 0

Current

Sense

Source

ORDERING INFORMATION

Device Package Shipping

NCV8415DTRKG DPAK

NCV8415STT1G SOT−223

NCV8415STT3G SOT−223

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

1 Publication Order Number:

(Pb−Free)

Tape & Reel

†

2500 /

1000 /

4000 /

NCV8415/D

NCV8415

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain−to−Source Voltage Internally Clamped V

Drain−to−Gate Voltage Internally Clamped V

Gate−to−Source Voltage V

Drain Current − Continuous I

Total Power Dissipation (SOT−223)

@ T

= 25°C (Note 1)

A

@ TA = 25°C (Note 2)

DSS

DG

GS

D

P

D

Total Power Dissipation (DPAK)

@ TA = 25°C (Note 1) @ T

= 25°C (Note 2)

A

Thermal Resistance (SOT−223)

Junction−to−Ambient (Note 1) Junction−to−Ambient (Note 2) Junction−to−Case (Soldering Point)

R

q

JA

R

q

JA

R

q

JS

Thermal Resistance (DPAK)

Junction−to−Ambient (Note 1) Junction−to−Ambient (Note 2) Junction−to−Case (Soldering Point)

Single Pulse Inductive Load Switching Energy (L = 10 mH, I T

= 25°C)

Jstart

= 4.2 A, VGS = 5 V, RG = 25 W,

Lpeak

Load Dump Voltage (VGS = 0 and 10 V, RL = 10 W) (Note 3)

Operating Junction Temperature T

Storage Temperature T

R

q

JA

R

q

JA

R

q

JS

E

AS

US* 52 V

J

storage

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. Mounted onto a 80 × 80 × 1.6 mm single layer FR4 board (100 sq mm, 1 oz. Cu, steady state).

2. Mounted onto a 80 × 80 × 1.6 mm single layer FR4 board (645 sq mm, 1 oz. Cu, steady state).

3. Load Dump Test B (with centralized load dump suppression) according to ISO16750−2 standard. Guaranteed by design. Not tested in

production. Passed Class C according to ISO16750−1.

42 V

±14 V

Internally Limited

W

1.29

2.20

1.54

2.99

°C/W

96.4

56.8

10.6

80.8

41.8

3.2

88 mJ

−40 to 150 °C

−55 to 150 °C

ESD ELECTRICAL CHARACTERISTICS (Note 4, 5)

Parameter

Electro−Static Discharge Capability

Human Body Model (HBM)

Charged Device Model (CDM) 1000 − −

4. Not tested in production.

5. This device series incorporates ESD protection and is tested by the following methods:

ESD Human Body Model tested per AEC−Q100−002 (JS−001−2017). Field Induced Charge Device Model ESD characterization is not performed on plastic molded packages with body sizes smaller than 2 × 2 mm due to the inability of a small package body to acquire and retain enough charge to meet the minimum CDM discharge current waveform characteristic defined in JEDEC JS−002−2018.

+

V

GS

−

Test Condition Symbol Min Typ Max Unit

ESD

4000 − −

+

I

D

DRAIN

I

G

GATE

V

DS

SOURCE

−

Figure 2. Voltage and Current Convention

V

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2

NCV8415

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise noted)

J

Test Condition Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

VGS = 0 V, ID = 10 mA

VGS = 0 V, ID = 10 mA, TJ = 150°C

V

(BR)DSS

42 46 51

42 44 51

V

(Note 6)

Zero Gate Voltage Drain Current

VGS = 0 V, VDS = 32 V

VGS = 0 V, VDS = 32 V, TJ = 150°C

I

DSS

− 0.6 2.0

− 2.4 10

mA

(Note 6)

Gate Input Current VGS = 5 V, VDS = 0 V I

GSS

− 50 70

ON CHARACTERISTICS

Gate Threshold Voltage

Gate Threshold Temperature Coefficient

Static Drain−to−Source On Resistance

VGS = VDS, ID = 150 mA

VGS = VDS, ID = 150 mA (Note 6)

VGS = 10 V, ID = 1.4 A

VGS = 10 V, ID = 1.4 A, TJ = 150°C

V

GS(th)

V

GS(th)/TJ

R

DS(ON)

1.0 1.6 2.0 V

− −4.0 − mV/°C

− 80 100

mW

− 150 190

(Note 6)

VGS = 5.0 V, ID = 1.4 A − 105 120

VGS = 5.0 V, ID = 1.4 A, TJ = 150°C

− 185 210

(Note 6)

VGS = 5.0 V, ID = 0.5 A − 105 120

VGS = 5.0 V, ID = 0.5 A, TJ = 150°C

− 185 210

(Note 6)

Source−Drain Forward On Voltage IS = 7 A, VGS = 0 V V

SD

− 0.88 1.10 V

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Time (10% V

to 90% ID)

GS

Turn−Off Time (90% VGS to 10% ID) t

Turn−On Time (10% VGS to 90% ID)

Turn−Off Time (90% VGS to 10% ID) t

Turn−On Rise Time (10% ID to 90% ID) t

Turn−Off Fall Time (90% ID to 10% ID) t

VGS = 0 V to 5 V, VDD = 12 V,

I

= 1 A

D

VGS = 0 V to 10 V, VDD = 12 V,

ID = 1 A

t

ON

OFF

t

ON

OFF

rise

fall

Slew Rate On (80% VDS to 50% VDS) −dVDS/dt

Slew Rate Off (50% VDS to 80% VDS) dVDS/dt

ON

OFF

− 30 35

− 44 55

− 13 20

− 70 90

− 9 15

− 29 40

0.5 1.63 −

0.4 0.55 −

ms

V/ms

SELF PROTECTION CHARACTERISTICS

Current Limit

VGS = 5 V, VDS = 10 V

VGS = 5 V, VDS = 10 V, TJ = 150°C

I

LIM

7.0 8.8 11

6.4 7.9 9.1

A

(Note 6)

VGS = 10 V, VDS = 10 V (Note 6) 5.2 8.2 11

VGS = 10 V, VDS = 10 V, TJ = 150°C

5.0 7.4 10

(Note 6)

Temperature Limit (Turn−Off)

Thermal Hysteresis

Temperature Limit (Turn−Off)

Thermal Hysteresis

VGS = 5.0 V (Note 6)

VGS = 10 V (Note 6)

T

LIM(OFF)

DT

LIM(ON)

T

LIM(OFF)

DT

LIM(ON)

150 175 185

− 15 −

150 185 200

− 15 −

°C

GATE INPUT CHARACTERISTICS (Note 6)

Device ON Gate Input Current

VGS = 5 V, VDS = 10 V, ID = 1 A

I

GON

35 50 70

mA

VGS = 10 V, VDS = 10 V, ID = 1 A 250 310 450

Current Limit Gate Input Current

VGS = 5 V, VDS = 10 V

I

GCL

45 76 95

VGS = 10 V, VDS = 10 V 320 450 550

Thermal Limit Gate Input Current

VGS = 5 V, VDS = 10 V, ID = 0 A

VGS = 10 V, VDS = 10 V, ID = 0 A

I

GTL

210 240 260

620 700 830

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

6. Not subject to production testing.

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3

NCV8415

TYPICAL PERFORMANCE CURVES

10

(A)

Lmax

I

T

= 150°C

J(start)

1

10 100

T

J(start)

= 25°C

L (mH)

Figure 3. Single Pulse Maximum Switch−Off

Current vs. Load Inductance

10

(A)

Lmax

I

T

J(start)

= 150°C

T

J(start)

= 25°C

1000

T

= 25°C

J(start)

(mJ)

100

max

E

10

10 100

T

J(start)

= 150°C

L (mH)

Figure 4. Single Pulse Maximum Switching

Energy vs. Load Inductance

1000

T

= 25°C

J(start)

(mJ)

100

max

E

T

J(start)

= 150°C

1

110

tav (ms)

Figure 5. Single Pulse Maximum Inductive

Switch−Off Current vs. Time in Avalanche

12

10

TA = 25°C

6 V

7 V

9 V

10

110

tav (ms)

Figure 6. Single Pulse Maximum Inductive

Switching Energy vs. Time in Avalanche

10

VDS = 10 V

8

6

(A)

D

I

6

10 V

8 V

4

2

0

0123 45

VGS = 2.5 V

VDS (V)

Figure 7. On−State Output Characteristics

5 V

4 V

3 V

(A)

D

I

4

2

0

1.5 2.5 3.5 4.5

12345

VGS (V)

Figure 8. Transfer Characteristics

−40°C

25°C 105°C

150°C

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4

NCV8415

TYPICAL PERFORMANCE CURVES

300

250

200

(mW)

150

DS(ON)

R

100

50

105°C, ID = 1.4 A

−40°C, ID = 1.4 A

−40°C, ID = 0.5 A

345678910

150°C, ID = 1.4 A

150°C, ID = 0.5 A

105°C, ID = 0.5 A

25°C, ID = 1.4 A

25°C, ID = 0.5 A

VGS (V)

Figure 9. R

vs. Gate−Source Voltage

DS(ON)

2.0

ID = 1.4 A

1.75

1.5

DS(ON)

VGS = 5 V

1.25

1.0 VGS = 10 V

Normalized R

0.75

210

190

170

150

150°C, VGS = 10 V

(mW)

130

105°C, VGS = 10 V

DS(ON)

110

R

90

25°C, VGS = 10 V

70

−40°C, VGS = 10 V

50

0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

150°C, VGS = 5 V

105°C, VGS = 5 V

25°C, VGS = 5 V

−40°C, VGS = 5 V

ID (A)

Figure 10. R

vs. Drain Current

DS(ON)

12

VDS = 10 V

11.5

11

−40°C

10.5

25°C

105°C

150°C

(A)

LIM

I

10

9.5

9

8.5

8

7.5

0.5

−40 −20 0 20 40 60 80 100 120 140 5 6 7 8 9 10

TJ (5C)

Figure 11. Normalized R

vs. Temperature

DS(ON)

7

5.5 6.5 7.5 8.5 9.5

VGS (V)

Figure 12. Current Limit vs. Gate−Source

Voltage

10

VDS = 10 V

9.5

9

(A)

8.5

LIM

I

VGS = 10 V

8

VGS = 5 V

7.5

7

−40 −20 0 20 40 60 80 100 120 140

TJ (5C)

Figure 13. Current Limit vs. Junction

Temperature

100

10

1

(mA)

DSS

0.1

I

0.01

0.001

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5

VGS = 0 V

150°C

105°C

25°C

−40°C

10 15 20 25 30 35 40

VDS (V)

Figure 14. Drain−to−Source Leakage Current