ON Semiconductor NCV81071 User Manual

Dual 5 A High Speed Low-Side MOSFET Drivers with Enable

NCV81071

NCV81071 is a high speed dual low−side MOSFETs driver. It is capable of providing large peak currents into capacitive loads. This driver can deliver 5 A peak current at the Miller plateau region to help reduce the Miller effect during MOSFETs switching transition. This driver also provides enable functions to give users better control capability in different applications. ENA and ENB are implemented on pin 1 and pin 8 which were previously unused in the industry standard pin−out. They are internally pulled up to driver’s input voltage for active high logic and can be left open for standard operations.

Features

• High Current Drive Capability ±5 A

• TTL/CMOS Compatible Inputs Independent of Supply Voltage

• Industry Standard Pin−out

• Enable Functions for Each Driver

• 8 ns Typical Rise and 8 ns Typical Fall Times with 1.8 nF Load

• Typical Propagation Delay Times of 20 ns with Input Falling and

20ns with Input Rising

• Input Voltage from 4.5 V to 20 V

• Dual Outputs can be Paralleled for Higher Drive Current

• Fully Specified from −40°C to +140°C

• AEC−Q100 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• Server Power

• Telecommunication, Datacenter Power

• Synchronous Rectifier

• Switch Mode Power Supply

• DC/DC Converter

• Power Factor Correction

• Motor Drive

• Renewable Energy, Solar Inverter

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MARKING DIAGRAM

V71x

AYW

ENB

OUTA

VDD

OUTB

MSOP−8

Z SUFFIX

CASE 846AM

V71x = Specific Device Code

x = A, B or C A = Assembly Location Y = Year W = Work Week G = Pb−Free Package

(Note: Microdot may be in either location)

PIN CONNECTIONS

ENA

INA

GND

INB

(Top View)

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 11 of this data sheet.

March, 2021 − Rev. 1

1 Publication Order Number:

NCV81071/D

NCV81071

ENA

INA

ENB

INB

Ref

VDD

Ref

VDD

OUTA

OUTB

GND

UVLO

ENA

INA

ENB

INB

Logic

A Channel

VDD

Logic

B Channel

VDD

Ref

VDD

Ref

VDD

OUTA

VDD

OUTB

GND

VDD

NCV81071A NCV81071B

A Channel

VDD

UVLO

B Channel

Logic

ENA

INA

ENB

INB

A Channel

VDD

UVLO

B Channel

Logic

VDD

OUTA

VDD

OUTB

GND

NCV81071C

Figure 1. NCV81071 Block Diagram

Table 1. PIN DESCRIPTION

Pin No. Symbol Description

1 ENA Enable input for the driver channel A with logic compatible threshold and hysteresis. This pin is used to en-

2 INA Input of driver channel A which has logic compatible threshold and hysteresis. If not used, this pin should be

3 GND Common ground. This ground should be connected very closely to the source of the power MOSFET.

4 INB Input of driver channel B which has logic compatible threshold and hysteresis. If not used, this pin should be

5 OUTB Output of driver channel B. The driver is able to provide 5 A drive current to the gate of the power MOSFET.

6 VDD Supply voltage. Use this pin to connect the input power for the driver device.

7 OUTA Output of driver channel A. The driver is able to provide 5 A drive current to the gate of the power MOSFET.

8 ENB Enable input for the driver channel B with logic compatible threshold and hysteresis. This pin is used to en-

able and disable the driver output. It is internally pulled up to VDD with a 200 kW resistor for active high operation. The output of the pin when the device is disabled will be always low.

connected to either VDD or GND. It should not be left unconnected.

able and disable the driver output. It is internally pulled up to VDD with a 200 kW resistor for active high operation. The output of the pin when the device is disabled will be always low.

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NCV81071

TYPICAL APPLICATION CIRCUIT

ENA

INA

GND

INB

NCV81071

ENB

OUTA

VDD

OUTB

Table 2. ABSOLUTE MAXIMUM RATINGS

Value

Min Max

Supply Voltage VDD −0.3 24 V

Output Current (DC) Iout_dc 0.3 A

Output Current (Pulse < 0.5 ms)

Input Voltage INA, INB −6.0 VDD+0.3

Enable Voltage ENA, ENB −0.3 VDD+0.3

Output Voltage OUTA, OUTB −0.3 VDD+0.3 V

Junction Operation Temperature T

Storage Temperature T

Electrostatic Discharge

OUTA OUTB Latch−up Protection 500 mA

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

Iout_pulse 6.0 A

stg

Human body model, HBM 5500

Charge device model, CDM 2500

−40 150

−65 160

Unit

°C

Table 3. RECOMMENDED OPERATING CONDITIONS

Parameter Rating Unit

VDD supply Voltage 4.5 to 20 V

INA, INB input voltage −5.0 to VDD V

ENA, ENB input voltage 0 to VDD V

Junction Temperature Range −40 to +140 °C

Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability.

Table 4. THERMAL INFORMATION

Package

MSOP−8 EP 39 4.7 11

1. YJT: approximate thermal impedance, junction−to−case top.

qJA (5C/W) qJC (5C/W) YJT (5C/W) (Note 1)

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NCV81071

Table 5. INPUT/OUTPUT TABLE

NCV81071A NCV81071B NCV81071C

ENA ENB INA INB

H H L L H H L L H L

H H L H H L L H H H

H H H L L H H L L L

H H H H L L H H L H

L L Any Any L L L L L L

Any Any x (Note 2) x (Note 2) L L L L L L

x (Note 2) x (Note 2) L L H H L L H L

x (Note 2) x (Note 2) L H H L L H H H

x (Note 2) x (Note 2) H L L H H L L L

x (Note 2) x (Note 2) H H L L H H L H

2. Floating condition, internal resistive pull up or pull down configures output condition

OUTA OUTB OUTA OUTB OUTA OUTB

PRODUCT MATRIX

NCV81071A NCV81071B NCV81071C

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NCV81071

Table 6. ELECTRICAL CHARACTERISTICS

(Typical values: VDD =12 V, 1 mF from VDD to GND, TA = TJ = −40°C to 140°C, typical at T

Parameter

Symbol Test Conditions Min Typ Max Units

SUPPLY VOLTAGE

VDD Under Voltage Lockout (rising) V

VDD Under Voltage Lockout (hysteresis)

Operating Current (no switching) I

CCR

CCH

VDD rising 3.5 4.0 4.5 V

INA = 0, INB = 5 V, ENA = ENB = 0 INA = 5 V, INB = 0, ENA = ENB = 0 INA = 0, INB = 5 V, ENA = ENB = 5 V INA = 5 V, INB = 0, ENA = ENB = 5 V

VDD Under Voltage Lockout to Output

VDD rising 10

Delay (Note 3)

INPUTS

High Threshold

Low Threshold V

thH

thL

Input rising from logic low 1.8 2.0 2.2 V

Input falling from logic high 0.8 1.0 1.2 V

INA, INB Pull−Up Resistance OUTA = OUTB = Inverter Configuration 200

INA, INB Pull−Down Resistance OUTA = OUTB = Buffer Configuration 200

OUTPUTS

Output Resistance High

Output Resistance Low R

Peak Source Current (Note 4) I

Miller Plateau Source Current (Note 4) I

Source

Peak Sink Current (Note 4) I

Miller Plateau Sink Current (Note 4) I

Sink

IOUT = −10 mA 0.8 2

IOUT = +10 mA 0.8 2

OUTA/OUTB = GND 200 ns Pulse

OUTA/OUTB = 5.0 V 200 ns Pulse

OUTA/OUTB = VDD 200 ns Pulse

OUTA/OUTB = 5.0 V 200 ns Pulse

ENABLE

High−Level Input Voltage

Low−Level Input Voltage V

IN_H

IN_L

Low to High Transition 1.8 2.0 2.2 V

High to Low Transition 0.8 1.0 1.2 V

ENA, ENB pull−up resistance 200

Propagation Delay Time (EN to OUT) (Notes 3, 5)

= 1.8 nF 16 20 29 ns

Load

= 1.8 nF 16 20 29 ns

Load

SWITCHING CHARACTERISTICS

Propagation Delay Time Low to High, IN Rising (IN to OUT) (Notes 3, 5)

Propagation Delay Time High to Low, IN Falling (IN to OUT) (Notes 3, 5)

Rise Time (Note 5) t

Fall Time (Note 5) t

Delay Matching between 2 Channels (Note 6)

= 1.8 nF 16 20 29 ns

Load

= 1.8 nF 16 20 29 ns

Load

= 1.8 nF 8 15 ns

Load

= 1.8 nF 8 15 ns

Load

INA = INB, OUTA and OUTB at 50% Transition Point

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Guaranteed by design.

4. Not production tested, guaranteed by design and statistical analysis.

5. See timing diagrams in Figure 2, Figure 3, Figure 4 and Figure 5.

6. Guaranteed by characterization.

= 25°C, unless otherwise specified)

AMB

400 mV

1.4 3 mA

5 A

4.5 A

5 A

3.5 A

1 4 ns

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NCV81071

Input

Enable

Output

Input

Enable

2 V

1 V

2 V

1 V

90%

10%

Figure 2. Enable Function for

Non−inverting Input Driver Operation

2 V

1 V

2 V

1 V

2 V

Input

1 V

2 V

Enable

1 V

90%

Output

10%

Figure 3. Enable Function for Inverting

Input Driver Operation

2 V

Input

1 V

2 V

Enable

1 V

Output

90%

10%

Output

90%

10%

Figure 4. Non−inverting Input Driver Operation Figure 5. Inverting Input Driver Operation

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NCV81071

TYPICAL CHARACTERISTICS

100

SUPPLY CURRENT (mA)

VDD = 4.5 V

Figure 6. Supply Current vs. Switching

270

240

210

180

150

120

SUPPLY CURRENT (mA)

Figure 8. Supply Current vs. Switching

270

240

210

180

150

120

SUPPLY CURRENT (mA)

VDD = 18 V

Figure 10. Supply Current vs. Switching

180

10 nF

4.7 nF

2.2 nF

1 nF

470 pF

600 1600 1800

FREQUENCY (kHz) FREQUENCY (kHz)

20001400120010008004002000

160

140

120

100

SUPPLY CURRENT (mA)

VDD = 8.0 V

Figure 7. Supply Current vs. Switching

Frequency (V

VDD = 12 V

FREQUENCY (kHz) FREQUENCY (kHz)

= 4.5 V)

12501000750 20005002500

10 nF

4.7 nF

2.2 nF

1 nF

470 pF

1500 1750

270

240

210

180

150

120

SUPPLY CURRENT (mA)

VDD = 15 V

Frequency (VDD = 8 V)

10 nF

Figure 9. Supply Current vs. Switching

Frequency (V

10 nF

4.7 nF

FREQUENCY (kHz) SUPPLY VOLTAGE (V)

= 12 V)

12501000750 20005002500

2.2 nF

1 nF

470 pF

1500 1750

120

100

SUPPLY CURRENT (mA)

LOAD

Frequency (VDD = 15 V)

= 2.2 nF

50 kHz

Figure 11. Supply Current vs. Supply Voltage

Frequency (V

= 18 V)

LOAD

12501000750 20005002500

100 kHz

= 2.2 nF)

10 nF

4.7 nF

2.2 nF

1 nF

470 pF

1500 1750

4.7 nF

2.2 nF

1 nF

470 pF

1500 1750

2 MHz

1 MHz

500 kHz

200 kHz

1816141210864

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NCV81071

TYPICAL CHARACTERISTICS

160

140

LOAD

120

100

SUPPLY CURRENT (mA)

Figure 12. Supply Current vs. Supply Voltage

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

SUPPLY CURRENT (mA)

0.4

0.2

Figure 14. Supply Current vs. Supply Voltage

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

SUPPLY CURRENT (mA)

0.4

0.2

Input = GND

1 MHz

100 kHz

2 MHz

500 kHz

200 kHz

1816141210864

= 4.7 nF

50 kHz

SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V)

Figure 13. Supply Current vs. Supply Voltage

Input = GND

SUPPLY VOLTAGE (V)

LOAD

= 4.7 nF)

Input = V

(NCV81071A)

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

SUPPLY CURRENT (mA)

0.4

0.2

1816141210864

Input = GND

SUPPLY VOLTAGE (V)

Figure 15. Supply Current vs. Supply Voltage

(NCV81071B)

(NCV81071C)

Input = V

1816141210864

VDD = 20 V

, RISE TIME (ns) t

VDD = 10 V

Figure 16. Rise Time vs. Temperature Figure 17. Fall Time vs. Temperature

VDD = 15 V

VDD = 5 V

40 140

TEMPERATURE (°C)

, FALL TIME (ns)

1201008060200−20−40

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VDD = 20 V

VDD = 10 V

VDD = 15 V

VDD = 5 V

40 140

TEMPERATURE (°C)

1201008060200−20−40

NCV81071

TYPICAL CHARACTERISTICS

, DELAY TIME (ns)

Figure 18. Propagation Delay td1 vs. Supply

, FALL TIME (ns)

Figure 20. Fall Time tf vs. Supply Voltage Figure 21. Rise Time tr vs. Supply Voltage

10 nF

4.7 nF

2.2 nF

1.0 nF 470 pF

1816141210864

VDD, SUPPLY VOLTAGE (V) VDD, SUPPLY VOLTAGE (V)

, DELAY TIME (ns)

Figure 19. Propagation Delay td2 vs. Supply

Voltage

10 nF

4.7 nF

1.0 nF

VDD, SUPPLY VOLTAGE (V) VDD, SUPPLY VOLTAGE (V)

2.2 nF

470 pF

1816141210864

, RISE TIME (ns)

Voltage

1.0 nF

10 nF

4.7 nF

2.2 nF

1.0 nF 470 pF

1816141210864

10 nF

4.7 nF

2.2 nF

470 pF

1816141210864

VDD

Output

Figure 22. Output Behavior vs. Supply Voltage

NCV81071A (Inverting) 10 nF between Output

and GND, INA = GND, ENA = VDD

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VDD

Output

Figure 23. Output Behavior vs. Supply Voltage

NCV81071A (Inverting) 10 nF between Output

and GND, INA = GND, ENA = VDD

NCV81071

TYPICAL CHARACTERISTICS

VDD

Output

Figure 24. Output Behavior vs. Supply Voltage

NCV81071A (Inverting) 10 nF between Output

and GND, INA = VDD, ENA = VDD

VDD

Output

VDD

Output

Figure 25. Output Behavior vs. Supply Voltage

NCV81071A (Inverting) 10 nF between Output

and GND, INA = VDD, ENA = VDD

VDD

Output

Figure 26. Output Behavior vs. Supply Voltage

NCV81071B (Non−Inverting) 10 nF between

Output and GND, INA = VDD, ENA = VDD

VDD

Output

Figure 28. Output Behavior vs. Supply Voltage

NCV81071B (Non−Inverting) 10 nF between

Output and GND, INA = GND, ENA = VDD

Figure 27. Output Behavior vs. Supply Voltage

NCV81071B (Non−Inverting) 10 nF between

Output and GND, INA = VDD, ENA = VDD

VDD

Output

Figure 29. Output Behavior vs. Supply Voltage

NCV81071B (Non−Inverting) 10 nF between

Output and GND, INA = GND, ENA = VDD

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NCV81071

LAYOUT GUIDELINES

The switching performance of NCV81071 highly depends on the design of PCB board. The following layout design guidelines are recommended when designing boards using these high speed drivers.

Place the driver as close as possible to the driven MOSFET.

Place the bypass capacitor between VDD and GND as close as possible to the driver to improve the noise filtering. It is preferred to use low inductance components such as chip capacitor and chip resistor. If vias are used, connect several paralleled vias to reduce the inductance of the vias.

Minimize the turn-on/sourcing current and turn-off/sinking current paths in order to minimize stray inductance. Otherwise high di/dt established in these loops with stray inductance can induce significant voltage spikes on the output of the driver and MOSFET Gate terminal.

Keep power loops as short as possible by paralleling the source and return traces (flux cancellation).

Keep low level signal lines away from high level power

lines with a lot of switching noise.

Place a ground plane for better noise shielding. Beside noise shielding, ground plane is also useful for heat dissipation.

NCV81071 MSOP package has a thermal pad for: 1) quiet GND for all the driver circuits; 2) heat sink for the driver. This pad must be connected to a ground plane and no switching currents from the driven MOSFET should pass through the ground plane under the driver. To maximize the heatsinking capability, it is recommended several ground layers are added to connect to the ground plane and thermal pad. A via array within the area of package can conduct the heat from the package to the ground layers and the whole PCB board. The number of vias and the size of ground plane are determined by the power dissipation of NCV81071 (VDD voltage, switching frequency and load condition), the air flow condition and its maximum junction temperature.

ORDERING INFORMATION

Part Number Marking Output Configuration Temperature Range Package Type Shipping

NCV81071AZR2G V71A dual inverting

NCV81071BZR2G V71B dual non inverting

NCV81071CZR2G V71C One inverting

one non inverting

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

−40°C to +140°C

MSOP8 EP

(Pb−Free)

3000 / Tape & Reel

†

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MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SCALE 1:1

MSOP8 EP, 3x3

CASE 846AM

ISSUE O

DATE 27 FEB 2014

PIN ONE INDICATOR

C0.10

TOP VIEW

SEATING

PLANE

SIDE VIEW

BOTTOM VIEW

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

8X b

DETAIL A

0.08 BC

S S

DETAIL A

END VIEW

RECOMMENDED

SOLDERING FOOTPRINT*

0.42

0.65

PITCH

DIMENSIONS: MILLIMETERS

0.85

5.35

NOTES:

1. DIMENSIONS AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSIONS: MILLIMETERS.

3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.10 MM IN EXCESS OF MAXIMUM MATERIAL CONDITION.

4. DIMENSION D DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH,

PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 MM PER SIDE. DIMENSION E DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 MM PER SIDE. DIMENSIONS D AND E ARE DETERMINED AT DATUM F.

5. DATUMS A AND B TO BE DETERMINED AT DATUM F.

6. A1 IS DEFINED AS THE VERTICAL DISTANCE FROM THE SEATING PLANE TO THE LOWEST POINT ON THE PACKAGE BODY.

MILLIMETERS

DIM MIN MAX

A −−− 1.10

A1 0.05 0.15

b 0.25 0.40 c 0.13 0.23 D 2.90 3.10

D2 1.78 REF

E 4.75 5.05 E1 2.90 3.10 E2 1.42 REF

e 0.65 BSC

L 0.40 0.70 L2 0.254 BSC

GENERIC

MARKING DIAGRAM*

XXXX AYW G

XXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week G = Pb−Free Package

(Note: Microdot may be in either location)

*This information is generic. Please refer

to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present and may be in either location.

DOCUMENT NUMBER:

DESCRIPTION:

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.

98AON82708F

MSOP8 EP, 3X3

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

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ON Semiconductor NCV81071 User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual