High Efficiency 3 A
Synchronous Buck Dual
LED Driver with Integrated
High Side Switch and
Current Sensing for
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Automotive Front Lighting
Description
The NCV78825 is a single−chip and high efficient Synchronous
Buck Dual LED Driver designed for automotive front lighting
applications like high beam, low beam, DRL (daytime running light),
turn indicator, fog light, static cornering, etc. The NCV78825 is in
particular designed for high current LEDs and provides a complete
solution to drive 2 LED strings of up−to 60 V. It includes 2
independent current regulators for the LED strings and required
diagnostic features for automotive front lighting with a minimum of
external components – the chip doesn’t need any external sense
resistor for the buck current regulation. The available output current
and voltages can be customized per individual LED string. When more
than 2 LED channels are required on 1 module, then 2, 3 or more
devices NCV78825 can be combined; also with NCV787x3 devices –
the predecessor of the NCV78825. Thanks to the SPI
programmability, one single hardware configuration can support
various application platforms.
Features
A= Assembly Location
WL= Wafer Lot
YY= Year
WW= Work Week
G= Pb−Free Package
• Single Chip
• Buck Topology
• 2 LED Strings up−to 60 V
• High Current Capability up to 3 A DC per Output
See detailed ordering and shipping information on page 2 o
this data sheet.
ORDERING INFORMATION
• Integrated High Side Switch
• Low Side Pre−driver for External NMOS Device
• High Overall Efficiency
• Minimum of External Components
• Integrated High Accuracy Current Sensing
• Integrated Switched Mode Buck Current Regulator
• Average Current Regulation Through the LEDs
• High Operating Frequencies to Reduce Inductor Sizes
• Low EMC Emission for LED Switching and Dimming
ypical Applications
• High Beam
• Low Beam
• DRL
• Position or Park Light
• Turn Indicator
• Fog
• Static Cornering
• SPI Interface for Dynamic Control of System Parameters
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
TYPICAL APPLICATION SCHEMATIC
VBOOST
C_M3V
†
μC
VIO of MCU
R_SDO
VDRIVE
C_DRV
C_DD
VINBCK1
VBOOST
LBCKSW1
VDRIVE
VDD_C
RSTB
LEDCTRL1
LEDCTRL2
SCLK
SDI
SDO
CSB
TEST
NCV78825
TEST1
TEST2
VBOOSTM3V
GND
LSFET1
GNDS1
VLED1
VINBCK2
LBCKSW2
LSFET2
GNDS2
VLED2
EXPOSED
PAD
R_LED_1
R_LED_2
Figure 1. Typical Application Schematic
L_BCK_1
T_LS 1
C_LED_1
L_BCK_2
T_LS 2
C_LED_2
LED−string 1
C_BCK_1
LED−string 2
C_BCK_2
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NCV78825
Table 2. EXTERNAL COMPONENTS
Component
L_BCK_xBuck regulator coil (see BUCK REGULATOR chapter for details)47 (22)μH
C_BCK_x
C_M3V
C_DD
C_DRV
C_LED_x
R_LED_x
R_SDO
T_LSx
1. Pin TEST has to be connected to ground. TEST1 and TEST2 pins can be connected to ground or left floating.
2. C_LED_x is optional. If used, time constant of the C_LED_x and R_LED_x filter has to be lower than minimal LEDCTRLx PWM time for proper
VLED measurement.
3. R_LED_x is necessary to ensure Absolute maximum ratings of IVLEDx current (see Table 4).
4. GNDSx pins have to be star connections to the corresponding S of the external LS FET.
Buck regulator output capacitor (see BUCK REGULATOR chapter for details)220nF
Capacitor for M3V regulator470 (see Table 8)nF
VDD decoupling capacitor470 (see Table 7)nF
V
decoupling capacitor470nF
DRIVE
Optional VLEDx pin filter capacitor (Note 2)1nF
VLEDx pin serial resistor (Notes 2 and 3)1kΩ
SPI pull−up resistor1kΩ
Buck regulator low side switch (LS FET)NVTFS5C680NL,
1
2SDOSPI data outputMV open−drain
3SCLKSPI clockMV in
4SDISPI data inputMV in
5CSBSPI chip select (chip select bar)MV in
6LSFET1Buck 1 driver output for ext. low side switchMV out
7GNDS1Buck 1 ground sense for ext. low side switchMV out
8, 11, 14, 16, 21, 23, 26GND/NCGND/NC connection in applicationNC
9VBOOSTBooster input voltage pinHV supply
10VBOOSTM3VVBOOSTM3V regulator output pinHV out (supply)
12LBCKSW11Buck 1 switch outputHV out
13LBCKSW12Buck 1 switch outputHV out
15VLED1LED String 1 Forward Voltage Sense InputHV in
17VINBCK11Buck 1 high voltage supplyHV supply
18VINBCK12Buck 1 high voltage supplyHV supply
19VINBCK22Buck 2 high voltage supplyHV supply
20VINBCK21Buck 2 high voltage supplyHV supply
22VLED2LED String 2 Forward Voltage Sense InputHV in
24LBCKSW22Buck 2 switch outputHV out
Pin NameDescriptionI/O Type
RSTBExternal reset signalMV in
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NCV78825
Table 3. PIN DESCRIPTION (continued)
Pin No.
SSOP36−EP
25LBCKSW21Buck 2 switch outputHV out
27VDD_C3.3 V logic supplyLV supply
28TEST2Internal function. To be tied to GND or left openLV in/out
29GNDGroundGround
30GNDS2Buck 2 ground sense for ext. low side switchMV out
31LSFET2Buck 2 driver output for ext. low side switchMV out
32VDRIVEPre−driver supplyMV supply
33TEST1Internal function. To be tied to GND or left openLV in/out
34TESTInternal function. To be tied to GNDLV in
35LEDCTRL2LED string 2 enableMV in
36LEDCTRL1LED string 1 enableMV in
EPEXPOSED PADTo be tied to GND
Table 4. ABSOLUTE MAXIMUM RATINGS
Characteristic
VBOOST Supply VoltageV
VINBCKx Supply Voltage (Note 1)VINBCKxMax of
VBOOSTM3V Supply Voltage (Note 2)VBOOSTM3VMax of V
VDRIVE Supply VoltageVDRIVE−0.312V
LSFETx Voltage (Note 3)LSFETx−0.3Min of VDRIVE + 0.3, 12V
VLED Sense VoltageVLEDx−0.3Min of V
Logic Supply Voltage (Note 4)V
Medium Voltage IO PinsIOMV−0.37.0V
Test Pins (Note 5)TESTx−0.3Min of V
Buck Switch Low Side (Note 1)LBCKSWx−2VINBCKx + 0.3V
VLED Sink/source CurrentIVLEDx−3030mA
Storage Temperature (Note 6)T
The Exposed Pad (Note 7)EXPADGND − 0.3GND + 0.3V
The LS Pre−driver Sense GND VoltageGNDSxGND − 0.3GND + 0.3V
Electrostatic Discharge on Component
Level Human Body Model (Note 8)
Electrostatic Discharge on Component
Level Charge Device Model (Note 8)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. V(VINBCKx − LBCKSWx) < 70 V, the driver in off state.
2. The VBOOSTM3V regulator in off state.
3. The LSFETx driver in HiZ state.
4. Absolute maximum rating for pins: VDD, TEST. Also valid for relative difference VBOOST − VBOOSTM3V.
5. Absolute maximum rating for pins: TEST1, TEST2.
6. For limited time up to 100 hours. Otherwise the max storage temperature is 85°C.
7. The exposed pad must be hard wired to GND pin in the application to ensure both electrical and thermal connection.
8. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per AECQ100002 (EIA−JESD22A114−B)
ESD Charge Device Model tested per EIA−JESD22C101
Latchup Current Maximum Rating: 100 mA per JEDEC standard: JESD78
SymbolMinMaxUnit
BOOST
DD
STRG
V
ESD_HBM
V
ESD_CDM
VBOOSTM3V − 0.3, −0.3
−0.368V
Min of V
BOOST
− 3.6, −0.3Min of V
BOOST
BOOST
BOOST
−0.33.6V
DD
−50150°C
−2+2kV
−500+500V
I/O TypeDescriptionPin Name
+ 0.3, 68V
+ 0.3, 68V
+ 0.3, 68V
+ 0.3, 3.6V
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NCV78825
Operating ranges define the limits for functional
operation and parametric characteristics of the device. A
mission profile (Note 1) is a substantial part of the operation
conditions; hence the Customer must contact
ON Semiconductor in order to mutually agree in writing on
the allowed missions profile(s) in the application.
Table 5. RECOMMENDED OPERATING RANGES
Characteristic
Boost Supply VoltageV
VINBCKx Supply Voltage (Note 2)VINBCKxV
VDRIVE Voltage SupplyVDRIVE4.510V
Buck Switch Peak Output CurrentI_LBCKSW3.8A
Functional Operating Junction
Temperature Range (Note 3)
Parametric Operating Junction
Temperature Range (Note 4)
The Exposed Pad Connection (Note 5)EXPOSED_PADGND − 0.1GNDGND + 0.1V
The LS Pre−driver Sense GND Voltage
(Note 6)
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
1. A mission profile describes the application specific conditions such as, but not limited to, the cumulative operating conditions over life time,
the system power dissipation, the system’s environmental conditions, the thermal design of the customer’s system, the modes, in which the
device is operated by the customer, etc. No more than 100 cumulated hours in life time above T
2. Hard connection of VINBCKx to VBOOST on PCB.
3. The circuit functionality is not guaranteed outside the functional operating junction temperature range. Also please note that the device is
verified on bench for operation up to 170°C but that the production test guarantees 155°C only.
4. The parametric characteristics of the circuit are not guaranteed outside the Parametric operating junction temperature range.
5. The exposed pad must be hard wired to GND pin in an application to ensure both electrical and thermal connection.
6. The hard connection of the GNDSx pins on the PCB, mainly to the S of the LS NMOS device
corresponding S of the LS NMOS max +/− 0.2 mV.
SymbolMinTypMaxUnit
BOOST
T
JF
T
JP
GNDSxGND − 0.1GNDGND + 0.1mV
667V
− 0.1V
BOOST
−40155°C
−40150°C
BOOST
V
.
tw
+ 0.1V
BOOST
the voltage difference between the pin and
Table 6. THERMAL RESISTANCE
Characteristic
Thermal Resistance Junction to Exposed Pad (Note 1)SSOP36−EPRthjp−3.5−°C/W
1. Includes also typical solder thickness under the Exposed Pad (EP).
PackageSymbolMinTypMaxUnit
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NCV78825
ELECTRICAL CHARACTERISTICS
Table 7. VDD: 3.3 V LOW VOLTAGE ANALOG AND DIGITAL SUPPLY
CharacteristicSymbolConditionsMinTypMaxUnit
The Regulator Output VoltageVDD3.053.453.6V
VDD External Decoupling CapC_DD0.30.472.2μF
The VDRIVE Current Consumption (Note 2)I_VDRIVE815mA
Output Current LimitationVDD_ILIM15160mA
POR Toggle Level on VDD RisingPOR
POR Toggle Level on VDD FallingPOR
POR HysteresisPOR
OTP UV Toggle Level on VBOOSTOTP_UV1315V
OTP UV Toggle Level HysteresisOTP_UV_HYST0.010.20.75V
1. All Min and Max parameters are guaranteed over full junction temperature (TJP) range (−40 °C; 150 °C), unless otherwise specified.
2. Only internal consumption, Excluding LS NMOS gate charge current.
3V_H
3V_L
3V_HYST
Table 8. VBOOSTM3V: HIGH SIDE AUXILIARY SUPPLY
Characteristic
VBOOSTM3V Regulator Output VoltageV
DC Output Current Capability (Note 1)M3V_IOUT7.542mA
Output Current LimitationM3V_ILIM300mA
VBOOSTM3V External Decoupling CapC_M3VReferenced to VBOOST0.10.472.2
VBOOSTM3V Ext. Decoupling Cap. ESRC_M3V_ESRReferenced to VBOOST200
VBSTM3V POR Level, Falling EdgeM3V_PORLReferenced to VBOOST−2.7−1.8V
VBSTM3V POR Level, Rising EdgeM3V_PORHReferenced to VBOOST−2.4−1.8V
VBSTM3V POR Level HysteresisM3V_PORHYST0.05V
VBOOST POR LevelM3V_VBSTPORVBOOST goes down3.55.5V
1. VBOOST = 68 V, f
= 2 MHz, maximum total gate charge for both activated BUCK channels Qgate = 20 nC
BUCK
SymbolConditionsMinTypMaxUnit
BSTM3V
Referenced to VBOOST−3.6−3.3−3.0V
2.73.05V
2.452.8V
0.010.20.75V
mF
mW
Table 9. OSC10M: SYSTEM OSCILLATOR CLOCK
CharacteristicSymbolConditionsMinTypMaxUnit
System Oscillator FrequencyFOSC10M81012MHz
Table 10. ADC FOR MEASURING VBOOST, VDD, VLED1, VLED2, TEMP
Characteristic
ADC ResolutionADC_RES8Bits
Integral Nonlinearity (INL)ADC_INLBest fitting straight line method−1.51.5LSB
Differential Nonlinearity (DNL)ADC_DNLBest fitting straight line method−22LSB
Full Path Gain Error for
Measurements of VLEDx,
VBOOST
Offset at Output of ADCADC_OFFS−22LSB
Time for 1 SAR ConversionADC_CONVFull conversion of 8 bits6.67810
ADC Full Scale for VDD
Measurement
ADC Full Scale for VLEDx
Measurement
ADC Full Scale for VLEDx
Measurement
ADC Full Scale for VLEDx
Measurement
SymbolConditionsMinTypMaxUnit
ADC_GE−3.253.25%
ADCFS_VDD3.8744.13V
ADCFS_VLED00The VLED range code is “00”67.7257072.275V
ADCFS_VLED01The VLED range code is “01”48.3755051.625V
ADCFS_VLED10The VLED range code is “10”38.7004041.300V
OpenLEDx Detection TimeTON_OPEN405060
Buck Minimum TON TimeTON_MINFor
Delay from BUCKx ISENS
Comparator Input Voltage
Balance to BUCKx Switch
Going OFF
1. Measured as comparator DC threshold value, without comparator delay and switch falling slope.
OCDR42437mA
OCDR54875mA
TC_00[BUCKx_TOFF = 00000]50
TC_31[BUCKx_TOFF = 11111]5
TOFF_ERRWTC = Toff × VCOIL @ VLED > 2
Toff > 350 ns, Toff temperature
dependency relative to Thot =
155°C, see Figure 8
dTC
VLED_LMT1.621.81.98V
TC_ZCD−2.8−1.2−0.2mV
TC_ZCD_FT2080ns
OVD_THRLBCKSWx−VINBCKx, rising
OVD_FT100ns
HSVT_THR0.6V
HSVT_FT45ns
ISENSCMP_DELISENS cmp. over−drive ramp >
5 bits, exponential decrease7.16%
VINBCKx – LBCKSWx < 2.4 V,
no failure at LBCKSWx pin
for Slope = 1.25 A/μs, @125°C
V,
V,
Toff > 350 ns
V,
Toff 350 ns
edge
1 mV/10 ns,
−10+10%
−15+15%
−35+35ns
100200mV
50250ns
45ns
ms × V
ms × V
ms
Table 13. BUCK REGULATOR – LS SWITCH PRE−DRIVER
Characteristic
Top Switch RonRont40
Bottom Switch RonRonb8
The Pull Down ResistorLS_PUD10
LS FET Gate Voltage Threshold LevelLS_VTComparator level for non−overlap
LS FET Gate Voltage Comparator
Propagation Delay
The Maximum Reverse Polarity CurrentLS_IREVLSx_IREV_NOCTRL = 1300mA
SymbolConditionsMinTypMaxUnit
0.4V
control when LS−>off, HS−>on
LS_DEL10ns
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NCV78825
Table 13. BUCK REGULATOR – LS SWITCH PRE−DRIVER (continued)
CharacteristicUnitMaxTypMinConditionsSymbol
The non−overlap Time LS−off to HS−on
1. The time from detection of the LS switch in off state (pre−driver voltage at LS_VT threshold), to start of switching HS on.
Table 14. 5 V TOLERANT DIGITAL INPUTS (SCLK, CSB, SDI, LEDCTRL1, LEDCTRL2, RSTB)
Characteristic
High−level Input VoltageVINHI2V
Low−level Input VoltageVINLO0.8V
Pull Resistance (Note 1)Rpull40160
LED PWM Propagation Delay (Note 2)BUCKx_SW_DELActivation time of the BUCKx