ON Semiconductor NCV48220 User Manual

NCV48220

LDO Regulator - Very Low

Quiescent Current, Charge
Pump Boost Converter

150 mA

The NCV48220 is very low quiescent current 150 mA LDO
regulator with integrated battery voltage charge pump boost converter
for automotive applications requiring full functionality during battery
voltage drop events (e.g. cranking). The NCV48220 require very low
number of external components. Very low quiescent current as low as
35 mA typical for NCV48220 makes it suitable for applications
permanently connected to battery requiring very low quiescent
current. The Enable function can be used for further decrease of
quiescent current down to 1 mA. The NCV48220 contains protection
functions as current limit, thermal shutdown and reverse bias current
protection.

Features

• Output Voltage: 5 V

• LDO Output Current: up to 150 mA

• Very Wide Input Voltage Operation Range: from 3 V to 40 V

• Very Low Quiescent Current: typ 35 mA

• Enable Function (1.0 mA max quiescent current when disabled)

• Microprocessor Compatible Control Functions:

♦ Reset Output

• AEC−Q100 Grade 1 Qualified and PPAP Capable

• Protection Features:

♦ Current Limitation
♦ Thermal Shutdown
♦ Reverse Bias Output Current

• This is a Pb−Free Device

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MARKING

DIAGRAMS

8

8

1

A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 14 of this data sheet.

SOIC−8
D SUFFIX
CASE 751

V4822050

ALYWG

G

1

Typical Applications

• Stop−Start Applications

• Instruments and Clusters

• Infotainment

© Semiconductor Components Industries, LLC, 2016

September, 2019 − Rev. 1

1 Publication Order Number:

NCV48220/D

NCV48220

C

FLY

V

BAT

C

in

C+

V

in

V

CP

C

CP

NCV48220

GND

C−

V

out

V

out

C

V

DD

out

Microprocessor

RO

I/OENONOFF

Figure 1. Application Schematic

C+ C− V

V

in

Charge Pump

Power Switches

in1

Charge Pump

Drivers and

R

Logic

CP

LDO

with Overcurrent

and

Overtemperature

Protections

V

ref

and

Reset Circuitry

R

RO

V

RO

out

EN

R

in2

V

Enable

Battery Voltage

ref

V

ref

Monitor

ref

Figure 2. Simplified Block Diagram

GNDV

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NCV48220

Figure 3. Pin Connections (Top Views)

Table 1. PIN FUNCTION DESCRIPTION

Pin No.

SOIC−8

1 V

2 C+ Flying Capacitor Positive Connection.

3 C− Flying Capacitor Negative Connection.

4 V

5 GND Power Supply Ground.

6 EN Enable Input; low level disables the IC.

7 RO

8 V

Pin Name Description

CP

in

Charge Pump Output Voltage (Input Voltage of LDO).

Charge Pump Input Voltage.

Reset Output. 30 kW internal Pull−up resistor connected between RO and V
out of regulation. See ELECTRICAL CHARACTERISTICS table for delay time specifications.

out

Regulated Output Voltage of LDO.

18

V

CP

C+

C−

V

in

SOIC−8

V

out

RO

EN

GND

. RO goes Low when V

out

out

is

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3

NCV48220

MAXIMUM RATINGS

Rating Symbol Min Max Unit

Charge Pump Input Voltage DC (Note 1) V

Charge Pump Input Voltage (Note 2)

Load Dump − Suppressed

Charge Pump Output Voltage V

Positive Flying Capacitor Voltage V

Negative Flying Capacitor Voltage V

Regulated Output Voltage V

Enable Input Voltage DC

DC

in

U

S

CP

C+

C−

out

V

EN

Transient, t < 100 ms

Reset Output Voltage V

Maximum Junction Temperature T

Storage Temperature Range T

RO

J(max)

STG

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.

1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.

2. Load Dump Test B (with centralized load dump suppression) according to ISO16750−2 standard. Guaranteed by design. Not tested in
production. Passed Class A according to ISO16750−1.

−0.3 40 V

− 45 V

−0.3 16 V

−0.3 16 V

−0.3 7 V

−0.3 7 V

−0.3

−

40
45

−0.3 7 V

− 150 °C

−55 150 °C

V

ESD CAPABILITY (Note 3)

Rating Symbol Min Max Unit

ESD Capability, Human Body Model ESD

HBM

−2 2 kV

3. This device series incorporates ESD protection and is tested by the following methods:

ESD Human Body Model tested per AEC−Q100−002 (JS−001−2010)

Field Induced Charge Device Model ESD characterization is not performed on plastic molded packages with body sizes <50mm
to the inability of a small package body to acquire and retain enough charge to meet the minimum CDM discharge current waveform
characteristic defined in JEDEC JS−002−2014.

LEAD SOLDERING TEMPERATURE AND MSL (Note 4)

Rating

Moisture Sensitivity Level MSL 1 −

4. For more information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D

Symbol Min Max Unit

THERMAL CHARACTERISTICS

Rating Symbol Value Unit

Thermal Characteristics, SOIC−8

5. Values based on 1s0p board with copper area of 645 mm2 (or 1 in2) of 1 oz copper thickness and FR4 PCB substrate.

6. Values based on 2s2p board with copper area of 645 mm
layers and FR4 PCB substrate.

Thermal Resistance, Junction−to−Air (Note 5)
Thermal Reference, Junction−to−Lead (Note 5)
Thermal Resistance, Junction−to−Air (Note 6)
Thermal Reference, Junction−to−Lead (Note 6)

R

θJA

R

ψJL1

R

θJA

R

ψJL1

2

(or 1 in2) of 1 oz copper thickness for inner layers, 2 oz copper thickness for single

106

62.5
74

59.5

2

°C/W

due

RECOMMENDED OPERATING RANGES

Rating Symbol Min Max Unit

Charge Pump Input Voltage V

LDO Input Voltage V

Junction Temperature T

in

CP

J

3.0 40 V

3.5 14 V

−40 150 °C

Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.

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NCV48220

ELECTRICAL CHARACTERISTICS (V

values T

= 25°C; for min/max values −40°C ≤ TJ ≤ 150°C, unless otherwise noted.) (Note 7)

J

= 13.5 V, VEN = 3 V, ICP = 0 mA, C

in

= 10 mF with ESR ≈ 10 mW, CCP = 10 mF for typical

FLY

Parameter Test Conditions Symbol Min Typ Max Unit

CHARGE PUMP OUTPUT

Undervoltage Lockout

V

Vin rising

falling

V

in

Charge Pump Operating Threshold

Vin rising, Charge Pump deactivated

V

CP_ON_OFF

VCP falling, Charge Pump activated

Charge Pump Voltage Drop (Vin – VCP) Vin = 7 V, I

Charge Pump Output Voltage Limit Vin = 15 V to 40 V

I

= 0.1 mA to 150 mA

out

= 150 mA V

out

V

Charge Pump Output Current Limit VCP = 0 V (shorted to GND) I

Charge Pump Output Impedance Vin = 3 V, I

= 75 mA R

out

Switching Frequency Vin = 3 V f

REGULATOR OUTPUT

Output Voltage (Accuracy %)

Vin = 7 V to 29 V (LDO mode, CP inactive)
I

= 0.1 mA to 150 mA

out

Output Voltage (Accuracy %)

Vin = 3 V (CP active, boosting mode)
I

= 55 mA

out

Output Voltage (Accuracy %) TJ = −40°C to 125°C

V

= 3.3 V (CP active, boosting mode)

in

I

= 120 mA

out

Line Regulation Vin = 7 V to 29 V, I

Load Regulation I

Dropout Voltage (Note 8) I

= 0.1 mA to 150 mA Reg

out

= 150 mA V

out

= 5 mA Reg

out

DISABLE AND QUIESCENT CURRENTS

Disable Current

Quiescent Current, Iq = Iin − I

out

VEN = 0 V,TJ < 85°C I

I

= 0.1 mA, TJ = 25°C

out

I

= 0.1 mA, TJ < 85°C

out

CURRENT LIMIT PROTECTION

V

Current Limit

Short Circuit Current Limit V

= 0.96 x V

out

= 0 V I

out

out_nom

PSRR

Power Supply Ripple Rejection

f = 100 Hz, 0.5 V

p−p

ENABLE

Enable Input Threshold Voltage

V
Logic Low
Logic High

Enable Input Current

Logic High
Logic Low

VEN = 5 V, TJ < 125 °C
VEN = 0 V, TJ < 125 °C

I

I

EN_OFF

RESET OUTPUT

Reset Output Thresholds

High
Low

Reset Output Low Voltage

V

decreasing

out

V

increasing

out

IRO < 200 mA, V

out

> 1 V

V

Integrated Reset Output Pull Up Resistor R

in_UVLO

2.6

2.2

2.8

2.4

3.0

2.6

V

V

6.1

6.3

6.5

5.5

5.7

5.0 5.1
(+2%)

− −

V

W

V

V

DO_CP

CP_LIM

CP_LIM

out_CP

SW

V

out

V

out

5.3

− 320 800 mV

13 14 15

− − 650 mA

− 12 −

400 450 500 kHz

4.9

(−2 %)

4.8

(−4 %)

V

out

4.8

− −

V

(−4 %)

line

load

DO

DIS

I

q

I

LIM

SC

−20 0 20 mV

−40 10 40 mV

− 150 300 mV

− − 1.0

mA

mA

−

35

−

40

−

45

205 − 450 mA

− 320 − mA

PSRR − 60 − dB

th(EN)

2.5

−

−

0.8

−

V

−

mA

−

3

EN_ON

th(RO)

V

ROL

RO

−

90

92.5−95

90.5

− 0.15 0.25 V

15 30 50

5

−

1

% of
V

97

out

kW

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NCV48220

ELECTRICAL CHARACTERISTICS (V

values T

= 25°C; for min/max values −40°C ≤ TJ ≤ 150°C, unless otherwise noted.) (Note 7)

J

= 13.5 V, VEN = 3 V, ICP = 0 mA, C

in

= 10 mF with ESR ≈ 10 mW, CCP = 10 mF for typical

FLY

Parameter UnitMaxTypMinSymbolTest Conditions

RESET OUTPUT

Reset Delay Time (Note 9)

Reset Reaction Time t

Min Available Time
Max Available Time

t

RD

RR

−

102.40128−153.6

16 25 38

ms

ms

THERMAL SHUTDOWN

Thermal Shutdown Temperature (Note 10)

Thermal Shutdown Hysteresis (Note 10) T

T

SD

SH

150 175 195 °C

− 10 − °C

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

7. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at T
pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.

8. Measured when output voltage falls 100 mV below the regulated voltage at V

9. Reset Delay Times can be chosen from list: 0, 2, 4, 8, 16, 32, 64, 128 ms (Reset Delay Time 0 ms represents Power Good function) and

= 13.5 V.

CP

[TJ. Low duty cycle

A

these delay times are factory preset.

10.Values based on design and/or characterization.

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