ON Semiconductor NCV47822 User Manual

NCV47822

Dual High Side Switch with
Adjustable Current Limit and
Diagnostic Features

The NCV47822 dual channel High Side Switch (HSS) with 250 mA
per channel is designed for use in harsh automotive environments. The
device has a h igh p eak i nput v oltage t olerance a nd r everse i nput v oltage,
reverse bias, overcurrent and overtemperature protections. The
integrated current sense feature (adjustable by resistor connected to
CSO pin for each channel) provides diagnosis and system protection
functionality. The CSO pin output current creates voltage drop across
CSO resistor which is proportional to output current of each channel.
Extended diagnostic features in OFF state are also available and
controlled by dedicated input and output pins.

Features

• Output Current per Channel: up to 250 mA

• Two Independent Enable Inputs (3.3 V Logic Compatible)

• Adjustable Current Limits: up to 350 mA

• Protection Features:

♦ Current Limitation
♦ Thermal Shutdown
♦ Reverse Input Voltage and Reverse Bias Voltage

• Diagnostic Features:

♦ Short To Battery (STB) and Open Load (OL) in OFF State
♦ Internal Components for OFF State Diagnostics
♦ Open Collector Flag Output
♦ Two Output Voltage Monitoring Outputs (Analog)

• AEC−Q100 Grade 1 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

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MARKING
DIAGRAM

14

14

TSSOP−14

Exposed Pad

1

CASE 948AW

NCV4

7822

ALYWG

G

1

A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 13 of this data sheet.

Typical Applications

• Audio and Infotainment System

• Active Safety System

V

and V

out_FB2

in

DE

CS

EN2

are sensed V

NCV47822

(Dual HSS)

out1

C

in

1 μF

Diagnostic Enable Input

Diagnostic Channel Select Input

* V

out_FB1

Figure 1. Application Schematic

(See Application Section for More Details)

© Semiconductor Components Industries, LLC, 2016

May, 2016 − Rev. 0

V

out1

V

out_FB1

CSO1EN1

C

EF

V

out2

V

out_FB2

CSO2

GND

and V

C

output voltages, respectively, via internal resistor dividers

out2

1 μF

1 μF

CSO1

CSO2

Proportional Voltage to V

R

CSO1

Error Flag Output (Open Collector)

Proportional Voltage to V

R

CSO2

C

out1

*

out1

1 μF

C

out2

*

out2

1 μF

1 Publication Order Number:

NCV47822/D

NCV47822

I

10 mA

PU1

V

EN1

DE
CS

in

VOLTAGE

REFERENCE

R

PD_EN1

780 kΩ

ENABLE

SATURATION

PROTECTION

THERMAL

SHUTDOWN

PD_CS

EN1
EN2

R

780 kΩ

OC1_ON
OC2_ON

R

780 kΩ

STB1_OL1_OFF
STB2_OL2_OFF

PD_DE

IPU1_ON

V

REF

V

REF _OFF

EN1

PD1_ON

DIAGNOSTIC

CONTROL

LOGIC

PASS DEVICE 1

AND

CURRENT MIRROR

STB1_OL1_OFF

IPU1_ON
IPU2_ON

PD1_ON
PD2_ON

I

PU2

10 mA

OC1_ON

I

CSO1

= I

out1

/ RATIO*

+

−

+

0.95x

−

V

+

V

−

V

REF

2.55 V

REF

500 kΩ

100 kΩ

REF_OFF

V

out1

CSO1

R

PD11

V

R

PD12

out_FB1

EF

EN2

GND

V

in

R

PD_EN2

780 kΩ

ENABLE

SATURATION

PROTECTION

THERMAL

SHUTDOWN

IPU2_ON

EN2

PD2_ON

PASS DEVICE 2

AND

CURRENT MIRROR

OC2_ON

STB2_OL2_OFF

I

CSO2

= I

out2

+

−

+

−

+

−

/ RATIO*

V

REF

2.55 V

0.95x
V

REF

V

REF_OFF

R

PD21

500 kΩ

R

PD22

100 kΩ

V

out2

CSO2

V

out_FB2

*) for current value of RATIO see
into Electrical Characteristic Table

Figure 2. Simplified Block Diagram

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2

NCV47822

411

V

in

CSO1

EN1

GND

EPAD

EN2

CSO2

V

in

TSSOP−14 EPAD

(Top View)

Figure 3. Pin Connections

Table 1. PIN FUNCTION DESCRIPTION

Pin No.

TSSOP−14

EPAD

1 V

2 CSO1 Current Sense Output 1, Current Limit setting and Output Current value information. See Application

3 EN1 Enable Input 1; low level disables the Channel 1. (Used also for OFF state diagnostics control for

4 GND Power Supply Ground.
5 EN2 Enable Input 2; low level disables the Channel 2. (Used also for OFF state diagnostics control for

6 CSO2 Current Sense Output 2, Current Limit setting and Output Current value information. See Application

7 V
8 V

9 V
10 DE Diagnostic Enable Input.
11 EF Error Flag (Open Collector) Output. Active Low.
12 CS Channel Select Input for OFF state diagnostics. Set CS = Low for OFF state diagnostics of Chan-

13 V
14 V

EPAD EPAD Exposed Pad is connected to Ground. Connect to GND plane on PCB.

Pin Name Description

in

Power Supply Input for Channel 1 and supply of control circuits of whole chip. At least 4.4 V power
supply must be used for proper IC functionality.

Section for more details.

Channel 1)

Channel 2)

Section for more details.

in

out2

out_FB2

Power Supply Input for Channel 2. Connect to pin 1 or different power supply rail.
Output Voltage 2.
Output Voltage 2 Analog Monitoring. See Application Section for more details.

nel 1. Set CS = High for OFF state diagnostics of Channel 2. Corresponding EN pin has to be used
for diagnostics control (see Application Information section for more details).

out_FB1

out1

Output Voltage 1 Analog Monitoring. See Application Section for more details.
Output Voltage 1.

V

out1

V

out_FB1

CS
EF
DE
V

out_FB2

V

out2

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NCV47822

Table 2. MAXIMUM RATINGS

Rating Symbol Min Max Unit

Input Voltage DC V
Input Voltage (Note 1)

Load Dump − Suppressed
Enable Input Voltage V
Output Voltage Monitoring V
CSO Voltage V
DE, CS and EF Voltages VDE, VCS, V
Output Voltage V
Junction Temperature T
Storage Temperature T

in

U

s*

EN1,2

out_FB1,2

CSO1,2

out1,2

J

STG

EF

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.

1. Load Dump Test B (with centralized load dump suppression) according to ISO16750−2 standard. Guaranteed by design. Not tested in
production. Passed Class A according to ISO16750−1.

Table 3. ESD CAPABILITY (Note 2)

Rating

ESD Capability, Human Body Model ESD

2. This device series incorporates ESD protection and is tested by the following methods:

ESD Human Body Model tested per AEC−Q100−002 (JS−001−2010)

Field Induced Charge Device Model ESD characterization is not performed on plastic molded packages with body sizes < 50 mm2 due
to the inability of a small package body to acquire and retain enough charge to meet the minimum CDM discharge current waveform
characteristic defined in JEDEC JS−002−2014.

Symbol Min Max Unit

HBM

Table 4. MOISTURE SENSITIVITY LEVEL (Note 3)

Rating

Moisture Sensitivity Level MSL 1 −

3. For more information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D

Symbol Min Max Unit

THERMAL CHARACTERISTICS (Note 4)

Rating

Thermal Characteristics (single layer PCB)

Thermal Resistance, Junction−to−Air (Note 5)
Thermal Reference, Junction−to−Lead (Note 5)

Thermal Characteristics (4 layers PCB)

Thermal Resistance, Junction−to−Air (Note 5)
Thermal Reference, Junction−to−Lead (Note 5)

4. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.

5. Values based on copper area of 645 mm

2

(or 1 in2) of 1 oz copper thickness and FR4 PCB substrate. Single layer − according to JEDEC51.3,

4 layers − according to JEDEC51.7

Symbol Value Unit

R

θJA

R

ψJL

R

θJA

R

ψJL

Table 5. RECOMMENDED OPERATING RANGES

Rating Symbol Min Max Unit

Input Voltage (Note 6) V
Output Current Limit (Note 7) I
Junction Temperature T
Current Sense Output (CSO) Capacitor C

Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.

6. Minimum V

7. Corresponding R

= 4.4 V or (V

in

CSO1,2

+ 0.5 V), whichever is higher.

out1,2

is in range from 76.5 kW down to 2185 W.

in

LIM1,2

J

CSO1,2

−42 45 V

− 60

−42 45 V

−0.3 10 V

−0.3 7 V

−0.3 7 V

−1 40 V

−40 150 °C

−55 150 °C

−2 2 kV

°C/W

52

9.0
°C/W

31
10

4.4 40 V
10 350 mA

−40 150 °C
1 4.7

V

mF

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NCV47822

Table 6. ELECTRICAL CHARACTERISTICS V

= 1 mF, Min and Max values are valid for temperature range −40°C v TJ v +150°C unless noted otherwise and are guaranteed by

C

out1,2

test, design or statistical correlation. Typical values are referenced to T

Parameter

= 13.5 V, V

in

= 3.3 V, VDE = 0 V, R

EN1,2

= 25°C (Note 8)

J

CSO1,2

= 0 W, C

= 1 mF, Cin = 1 mF,

CSO1,2

Test Conditions Symbol Min Typ Max Unit

OUTPUTS

Input to Output Differential Voltage

Vin = 8 V to 18 V
I

= 200 mA

out1,2

= 250 mA

I

out1,2

V

in−out1,2

−

−

210
230

350
400

mV

CURRENT LIMIT PROTECTION

Current Limit

Vin − 1 V I

out1,2

LIM1,2

350 − − mA

=

V

DISABLE AND QUIESCENT CURRENTS

Disable Current
Quiescent Current, Iq = Iin − (I
Quiescent Current, Iq = Iin – (I
Quiescent Current, Iq = Iin – (I

out1
out1
out1

+I
+I
+I

out2
out2
out2

)
) I
) I

= 0 V I

EN1,2

I

= I

out1
out1
out1

= 500 mA, Vin = 8 V to 18 V

out2

= I

= 200 mA, Vin = 8 V to 18 V I

out2

= I

= 250 mA, Vin = 8 V to 18 V I

out2

DIS

I

q
q
q

− 0.005 10

mA

− 0.85 1.5 mA

− 15 25 mA

− 20 40 mA

V

ENABLE

Enable Input Threshold Voltage

Logic Low (OFF)

Logic High (ON)
Enable Input Current V
Turn On Time

from Enable ON to V

out1,2

= Vin − 1 V

v

V
V

I

0.1 V

out1,2

w

Vin − 1 V

out1,2

= 3.3 V I

EN1,2

= 100 mA t

out1,2

V

th(EN1,2)

EN1,2

on

0.99

−

1.8

1.9

2 7 20

− 25 −

−

2.31

V

mA

ms

OUTPUT CURRENT SENSE

CSO Voltage Level at Current Limit

CSO Transient Voltage Level

Output Current to CSO Current Ratio

CSO Current at no Load Current

= Vin − 1 V

out1,2

= 3.3 kW

R

CSO1,2

C

= 4.7 mF, R

CSO1,2

pulse from 10 mA to 350 mA, tr = 1 ms
V

= 2 V, I

CSO1,2

V

= 8 V to 18 V, −40°C v TJ v +150°C)

in

V

CSO1,2

V

= 8 V to 18 V, −40°C v TJ v +150°C)

in

V

CSO1,2

= 2 V, I

= 0 V, I

out1,2

out1,2

out1,2

= 3.3 kW, I

CSO1,2

= 10 mA to 50 mA

= 50 mA to 350 mA

= 0 mA

out1,2

V

CSO_I

V

CSO1,2

I

out1,2

I

CSO1,2

I

CSO_off1,2

lim1,2

/

2.448

2.55 2.652

(−4%)

− − 3.3

−

265 −

(−15%)

−

285 −

(−5%)

− − 15

(+4%)

V

V

−

(+15%)

(+5%)

mA

V

DIAGNOSTICS

V

Overcurrent Voltage Level Threshold

Short To Battery (STB) Voltage
Threshold in OFF state

Open Load (OL) Current Threshold

= Vin − 1 V,

out1,2

= 3.3 kW

R

CSO1,2

Vin = 4.4 V to 18 V, I
V

= 3.3 V

DE

out1

= I

out2

= 0 mA,

Vin = 4.4 V to 18 V, VDE = 3.3 V I

in OFF state
Output Voltage to Output Feedback

Vin = 4.4 V to 18 V V

Voltage Ratio
Diagnostics Enable Threshold Voltage

Logic Low

Logic High
Channel Select Threshold Voltage

Logic Low

Logic High
Error Flag Low Voltage IEF = −1 mA V

V

OC1,2

V

STB1,2

OL1,2

out1,2/

V

out_FB1,2

V

th(DE)

V

th(CS)

EF_Low

92 95 98 % of

V

Ilim1,2

2 3 4 V

5.0 10 25 mA

5.7 6.0 6.3 −

0.99

−

0.99

−

1.8

1.9

1.8

1.9

−

2.31

−

2.31

− 0.04 0.4 V

CSO_

V

V

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

8. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at T

cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.

[ TJ. Low duty

A

9. Values based on design and/or characterization.

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