The NCV47821 dual channel LDO regulator with 200 mA per
channel is designed for use in harsh automotive environments. The
device has a high peak input voltage tolerance and reverse input voltage,
reverse bias, overcurrent and overtemperature protections. The
integrated current sense feature (adjustable by resistor connected to
CSO pin for each channel) provides diagnosis and system protection
functionality. The CSO pin output current creates voltage drop across
CSO resistor which is proportional to output current of each channel.
Extended diagnostic features in OFF state are also available and
controlled by dedicated input and output pins.
Features
• Adjustable Outputs: 3.3 V to 20 V ±3% Output Voltage
• Output Current per Channel: up to 200 mA
• Two Independent Enable Inputs (3.3 V Logic Compatible)
• Adjustable Current Limits: up to 300 mA
• Protection Features:
♦ Current Limitation
♦ Thermal Shutdown
♦ Reverse Input Voltage and Reverse Bias Voltage
• Diagnostic Features:
♦ Short To Battery (STB) and Open Load (OL) in OFF State
♦ Internal Components for OFF State Diagnostics
♦ Open Collector Flag Output
• AEC−Q100 Grade 1 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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MARKING
DIAGRAM
14
14
TSSOP−14
Exposed Pad
1
CASE 948AW
NCV4
7821
ALYWG
G
1
A= Assembly Location
L= Wafer Lot
Y= Year
W= Work Week
G= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 14 of this data sheet.
Typical Applications
• Audio and Infotainment System
• Active Safety System
GND
V
ADJ1
CSO1EN1
V
ADJ2
CSO2
out1
EF
out2
V
DE
CS
EN2
in
NCV47821
(Dual LDO)
C
in
1 μF
Diagnostic Enable Input
Diagnostic Channel Select Input
Cb1* and Cb2* are optional for stability with ceramic output capacitors
2CSO1Current Sense Output 1, Current Limit setting and Output Current value information. See Application
3EN1Enable Input 1; low level disables the Channel 1. (Used also for OFF state diagnostics control for
4GNDPower Supply Ground.
5EN2Enable Input 2; low level disables the Channel 2. (Used also for OFF state diagnostics control for
6CSO2Current Sense Output 2, Current Limit setting and Output Current value information. See Application
7V
8V
9ADJ2Adjustable Voltage Setting Input 2. See Application Section for more details.
10DEDiagnostic Enable Input.
11EFError Flag (Open Collector) Output. Active Low.
12CSChannel Select Input for OFF state diagnostics. Set CS = Low for OFF state diagnostics of Chan-
13ADJ1Adjustable Voltage Setting Input 1. See Application Section for more details.
14V
EPADEPADExposed Pad is connected to Ground. Connect to GND plane on PCB.
Pin NameDescription
in
in
out2
out1
Power Supply Input for Channel 1 and supply of control circuits of whole chip. At least 4.4 V power
supply must be used for proper IC functionality.
Section for more details.
Channel 1)
Channel 2)
Section for more details.
Power Supply Input for Channel 2. Connect to pin 1 or different power supply rail.
Regulated Output Voltage 2.
nel 1. Set CS = High for OFF state diagnostics of Channel 2. Corresponding EN pin has to be used
for diagnostics control (see Application Information section for more details).
Regulated Output Voltage 1.
V
out1
ADJ1
CS
EF
DE
ADJ2
V
out2
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3
NCV47821
Table 2. MAXIMUM RATINGS
RatingSymbolMinMaxUnit
Input Voltage DCV
Input Voltage (Note 1)
Load Dump − Suppressed
Enable Input VoltageV
ADJ Input VoltageV
CSO VoltageV
DE, CS and EF VoltagesVDE, VCS V
Output VoltageV
Junction TemperatureT
Storage TemperatureT
in
U
s*
EN1,2
ADJ1,2
CSO1,2
out1,2
J
STG
EF
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Load Dump Test B (with centralized load dump suppression) according to ISO16750−2 standard. Guaranteed by design. Not tested in
production. Passed Class C according to ISO16750−1.
Table 3. ESD CAPABILITY (Note 2)
Rating
ESD Capability, Human Body ModelESD
2. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per AEC−Q100−002 (JS−001−2010)
Field Induced Charge Device Model ESD characterization is not performed on plastic molded packages with body sizes < 50 mm2 due
to the inability of a small package body to acquire and retain enough charge to meet the minimum CDM discharge current waveform
characteristic defined in JEDEC JS−002−2014.
SymbolMinMaxUnit
HBM
Table 4. LEAD SOLDERING TEMPERATURE AND MSL (Note 3)
Rating
Moisture Sensitivity LevelMSL1−
3. For more information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D
4. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
5. Values based on copper area of 645 mm
2
(or 1 in2) of 1 oz copper thickness and FR4 PCB substrate. Single layer − according to JEDEC51.3,
4 layers − according to JEDEC51.7
SymbolValueUnit
R
θJA
R
ψJL
R
θJA
R
ψJL
Table 5. RECOMMENDED OPERATING RANGES
RatingSymbolMinMaxUnit
Input Voltage (Note 6)V
Nominal Output VoltagesV
Output Current Limit (Note 7)I
Junction TemperatureT
Current Sense Output (CSO) CapacitorC
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
6. Minimum V
7. Corresponding R
= 4.4 V or (V
in
CSO1,2
+ 0.5 V), whichever is higher.
out1,2
is in range from 25.5 kW down to 850 W.
in
out_nom1,2
LIM1,2
J
CSO1,2
−4245V
−60
−4245V
−0.310V
−0.37V
−0.37V
−140V
−40150°C
−55150°C
−22kV
°C/W
52
9.0
°C/W
31
10
4.440V
3.320V
10300mA
−40150°C
14.7
V
mF
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4
NCV47821
Table 6. ELECTRICAL CHARACTERISTICS V
= 10 mF, Min and Max values are valid for temperature range −40°C v TJ v +150°C unless noted otherwise and are guaranteed
C
out1,2
by test, design or statistical correlation. Typical values are referenced to T
Parameter
= 13.5 V, V
in
= 3.3 V, VDE = 0 V, R
EN1,2
= 25°C (Note 8)
J
CSO1,2
= 0 W, C
= 1 mF, Cin = 1 mF,
CSO1,2
Test ConditionsSymbolMinTypMaxUnit
REGULATOR OUTPUTS
Output Voltage (Accuracy %) (Note 9)
Vin = V
I
out1,2
Line Regulation (Note 9)Vin = V
I
out1,2
Load RegulationVin = (V
I
out1,2
Dropout Voltage (Note 10)V
out_nom1,2
V
DO1,2
to 40 V
in_min
= 5 mA to 200 mA
to (V
in_min
= 5 mA
out_nom1,2
= 5 mA to 200 mA
= Vin − V
= 5 V, I
out1,2
out_nom1,2
+ 8.5 V)
out1,2
+ 20 V)
= 200 mA
V
Reg
Reg
V
out1,2
line1,2
load1,2
DO1,2
−3−+3
%
%
−0.11.0
%
−0.41.4
−250500mV
DISABLE AND QUIESCENT CURRENTS
Disable Current
Quiescent Current, Iq = Iin − (I
Quiescent Current, Iq = Iin – (I
out1
out1
+I
+I
out2
out2
EN1,2
−40°C v T
) I
out1
) I
out1
= 0 V, V
v +125°C
J
= I
= 500 mA, Vin = (V
out2
= I
= 200 mA, Vin = (V
out2
out_nom1,2
= 5 V,
out_nom
out_nom
+ 8.5 V)I
+ 8.5 V)I
I
DIS
−0.110
q
q
−0.61.0mA
−15.525mA
mA
V
CURRENT LIMIT PROTECTION
Current Limit
out1,2
Vin = (V
0.9 x V
out_nom1,2
out_nom1,2
+ 8.5 V)
I
LIM1,2
300−−mA
=
V
PSRR & NOISE
Power Supply Ripple Rejection (Note 11)
f = 100 Hz, 0.5 V
p−p1,2
Output Noise Voltage (Note 11)f = 10 Hz to 100 kHz, C
= 10 nFV
b1,2
PSRR
n1,2
1,2
−75−dB
−137−
mV
rms
ENABLE
Enable Input Threshold Voltage
Logic Low (OFF)
Logic High (ON)
Enable Input CurrentV
Turn On Time
from Enable ON to 90 % of V
out
v
V
V
I
R
0.1 V
out1,2
w
0.9 x V
out1,2
= 3.3 V, V
EN1,2
= 100 mA, C
out1,2
= 82 kW, Rn2 = 27 kW
n1
out_nom1,2(Vout_nom1,2
out_nom1,2
= 10 nF,
b1,2
V
= 5 V)
= 5 VI
th(EN1,2)
EN1,2
t
on
0.99
−
1.8
1.9
2820
−1.7−
−
2.31
V
mA
ms
OUTPUT CURRENT SENSE
CSO Voltage Level at Current Limit
CSO Transient Voltage Level
Output Current to CSO Current Ratio
(Note 11, 12)
Output Current to CSO Current Ratio
(Note 12)
CSO Current at no Load Current
= 0.9 x V
out1,2
(V
out_nom1,2
C
CSO1,2
pulse from 10 mA to 300 mA, tr = 1 ms
I
out1,2
V
CSO1,2
(V
out_nom1,2
V
CSO1,2
(V
out_nom1,2
V
CSO1,2
(V
out_nom1,2
out_nom1,2
= 5 V) R
= 4.7 mF, R
= 2 V, I
out1,2
= 5 V)
= 2 V, I
out1,2
= 5 V)
= 0 V, I
out1,2
= 5 V)
,
= 1 kW
CSO1,2
= 1 kW
CSO1,2
= 1 mA to 10 mA
= 10 mA to 300 mA
= 0 mA,
V
CSO_I
V
CSO1,2
I
out1,2
I
CSO1,2
I
out1,2
I
CSO1,2
I
CSO_off1,2
lim1,2
/
/
2.448
2.552.652
(−4%)
−−3.3
−
98−
(−5%)
−
100−
(−5%)
−−10
(+4%)
V
V
−
(+5%)
−
(+5%)
mA
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
8. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at T
cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
9. Minimum input voltage V
and Rn2 accuracy.
R
n1
10.Measured when the output voltage V
11.Values based on design and/or characterization.
is 4.4 V or (V
in_min
out_nom1,2
has dropped by 2% of V
out1,2
+ 1 V) whichever is higher. V
out_nom1,2
from the nominal valued obtained at Vin = V
out_nom1,2
measured at ADJ1,2 pin due to excluding
[ TJ. Low duty
A
+ 8.5 V.
out1,2
12.Not guaranteed in dropout.
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5
NCV47821
Table 6. ELECTRICAL CHARACTERISTICS V
= 10 mF, Min and Max values are valid for temperature range −40°C v TJ v +150°C unless noted otherwise and are guaranteed
C
out1,2
by test, design or statistical correlation. Typical values are referenced to T
= 13.5 V, V
in
= 3.3 V, VDE = 0 V, R
EN1,2
= 25°C (Note 8)
J
CSO1,2
= 0 W, C
= 1 mF, Cin = 1 mF,
CSO1,2
ParameterUnitMaxTypMinSymbolTest Conditions
DIAGNOSTICS
Overcurrent Voltage Level Threshold
Short To Battery (STB) Voltage
Threshold in OFF state
Open Load (OL) Current Threshold
V
out_nom1,2
Vin = 4.4 V to 18 V, I
V
DE
= 3.3 V
= 5 V, R
CSO1,2
= I
out1
= 1 kW
= 0 mA,
out2
Vin = 4.4 V to 18 V, VDE = 3.3 VI
in OFF state
Diagnostics Enable Threshold Voltage
Logic Low
Logic High
Channel Select Threshold Voltage
Logic Low
Logic High
Error Flag Low VoltageIEF = −1 mAV
V
OC1,2
V
STB1,2
OL1,2
V
th(DE)
V
th(CS)
EF_Low
929598% of
V
Ilim1,2
234V
5.01025mA
0.99
−
0.99
−
1.8
1.9
1.8
1.9
−
2.31
−
2.31
−0.040.4V
CSO_
V
V
THERMAL SHUTDOWN
Thermal Shutdown Temperature
(Note 11)
out1
each channel measured separately
= 5 mA, V
out2
out_nom1,2
= 5 V,
T
SD1,2
150175195°C
I
= I
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
8. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at T
cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
9. Minimum input voltage V
and Rn2 accuracy.
R
n1
10.Measured when the output voltage V
11.Values based on design and/or characterization.
is 4.4 V or (V
in_min
out_nom1,2
has dropped by 2% of V
out1,2
+ 1 V) whichever is higher. V
out_nom1,2
from the nominal valued obtained at Vin = V
out_nom1,2
measured at ADJ1,2 pin due to excluding
[ TJ. Low duty
A
+ 8.5 V.
out1,2
12.Not guaranteed in dropout.
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NCV47821
TYPICAL CHARACTERISTICS
1.30
800
Vin = 13.5 V
1.29
1.28
1.27
I
out1,2
= 5 mA
700
600
500
400
1.26
1.25
, REFERENCE VOLTAGE (V)
1.24
REF1
V
1.23
60100160
1401208040200−20−40
300
200
, QUIESCENT CURRENT (mA)
q
100
I
0
TJ, JUNCTION TEMPERATURE (°C)VIN, INPUT VOLTAGE (V)
Figure 4. Reference Voltage vs. TemperatureFigure 5. Quiescent Current vs. Input Voltage
1.4
1.2
1.0
0.8
0.6
0.4
, REFERENCE VOLTAGE (V)
0.2
REF1
V
0
TJ = 25°C
= 5 mA
I
out1,2
543210
VIN, INPUT VOLTAGE (V)VIN, INPUT VOLTAGE (V)
0
TJ = 25°C
R
−1
out1,2
V
out_nom1,2
= 3.3 kW
= 3.3 V
−2
−3
−4
, INPUT CURRENT (mA)
in
I
−5
−6
Figure 6. Reference Voltage vs. Input VoltageFigure 7. Input Current vs. Input Voltage
(Reverse Input Voltage)
TJ = 25°C
I
= 500 mA
out1,2
V
out_nom1,2
−100
= 5 V
35302520151050
−5−15−20−25−30−35−40−45
40
450
400
350
300
250
200
150
, DROPOUT VOLTAGE (mV)
100
DO1,2
50
V
0
V
out_nom1,2
= 5 V
TJ = 150°C
TJ = 25°C
TJ = −40°C
300250200350150100500
I
, OUTPUT CURRENT (mA)VIN, INPUT VOLTAGE (V)
out1,2
1.15
1.10
V
out_nom1,2
V
out1,2
= 3.3 V
= 90% of V
out_nom1,2
1.05
1.00
0.95
0.90
0.85
0.80
, OUTPUT CURRENT LIMIT (A)
0.75
LIM1,2
I
0.70
1525
V
Figure 8. Dropout Voltage vs. Output CurrentFigure 9. Output Current Limit vs. Input
Voltage
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7
TJ = 25°C
TJ = −40°C
TJ = 150°C
40353020451050
NCV47821
TYPICAL CHARACTERISTICS
350
300
250
200
150
100
, OUTPUT CURRENT LIMIT (mA)
50
LIM1,2
I
0
48141824 26
R
CSO1,2
Figure 10. Output Current Limit vs. R
2.0
TJ = 25°C
1.5
1.0
V
in
= V
out_nom1,2
+ 8.5 V
(kW)
V
out1,2
= 3.3 V to 20 V
2220161210620
CSO
3.0
2.5
2.0
1.5
, CSO VOLTAGE (V)
1.0
CSO1,2
V
0.5
0
30
25
20
15
V
= 3.3 V to 20 V
out1,2
= −40°C to 150°C
T
J
, = 10 mA to 300 mA
I
LIM1,2
206090110
I
, OUTPUT CURRENT (% of I
out1,2
Figure 11. Output Current (% of I
LIM
Voltage
TJ = 25°C
V
in
= V
out_nom1,2
+ 8.5 V
1008070504030100
)
LIM1,2
) vs. CSO
0.5
, QUIESCENT CURRENT (mA)
q
I
0
I
, OUTPUT CURRENT (mA)I
out1,2
Figure 12. Quiescent Current vs. Output
Current (Low Load)
112
110
TJ = 25°C
108
V
in
= V
out_nom1,2
+ 8.5 V
106
104
102
100
98
, OUTPUT CURRENT
96
CSO1,2
94
/I
92
TO CSO CURRENT RATIO (−)
out1,2
90
I
88
I
, OUTPUT CURRENT (mA)I
out1,2
Figure 14. Output Current to CSO Current
Ratio vs. Output Current
10
5
, QUIESCENT CURRENT (mA)
q
I
0
20.0
17.515.012.510.07.55.02.50
, OUTPUT CURRENT (mA)
out1,2
28024020016012080400
Figure 13. Quiescent Current vs. Output
Current (High Load)
100
95
90
85
80
75
, OUTPUT CURRENT
70
65
CSO1,2
/I
TO CSO CURRENT RATIO (−)
out1,2
I
60
55
TJ = 25°C
= 4.5 V
V
in
V
out_nom1,2
= 5 V
50
1000100101
, OUTPUT CURRENT (mA)
out1,2
1000100101
Figure 15. Output Current to CSO Current
Ratio vs. Output Current (in dropout)
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NCV47821
TYPICAL CHARACTERISTICS
ESR (W)
100
Unstable Region
(Area above curves)
10
V
V
V
(Area under curves)
0.1
1
TJ = 25°C
= V
V
in
out_nom1,2
C
= 10 mF − 100 mF
out1,2
C
= none
b1,2
+ 8.5 V
0.01
I
, OUTPUT CURRENT (mA)FREQUENCY (Hz)
out1,2
Figure 16. Output Capacitor Stability Region
vs. Output Current
100
90
I
out1,2
80
70
I
(dB)
1,2
out1,2
60
out_nom1,2
out_nom1,2
out_nom1,2
= 20 V
= 5 V
= 3.3 V
Stable Region
= 5 mA
= 200 mA
3000
)
1/2
2500
2000
1500
1000
, NOISE DENSITY (nV/Hz
500
n1,2
V
0
200150100500
f = 10 Hz − 100 kHz
V
= 182 mV
n1,2
Figure 17. Noise vs. Frequency
TJ = 25°C
= 12 V
V
in
C
= 10 nF
b1,2
I
= 5 mA
out1,2
100,00010,000100010010
50
PSRR
40
30
20
TA = 25°C
= 13.5 V DC + 0.5 VPP AC
V
in
V
out_nom1,2
= 5 V
FREQUENCY (Hz)
Figure 18. PSRR vs. Frequency
100,00010,000100010010
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NCV47821
DEFINITIONS
General
All measurements are performed using short pulse low
duty cycle techniques to maintain junction temperature as
close as possible to ambient temperature.
Output voltage
The output voltage parameter is defined for specific
temperature, input voltage and output current values or
specified over Line, Load and Temperature ranges.
Line Regulation
The change in output voltage for a change in input voltage
measured for specific output current over operating ambient
temperature range.
Load Regulation
The change in output voltage for a change in output
current measured for specific input voltage over operating
ambient temperature range.
Dropout Voltage
The input to output differential at which the regulator
output no longer maintains regulation against further
reductions in input voltage. It is measured when the output
drops 2% of V
below its nominal value. The junction
out_nom
temperature, load current, and minimum input supply
requirements affect the dropout level.
Quiescent and Disable Currents
Quiescent Current (Iq) is the difference between the input
current (measured through the LDO input pin) and the
output load current. If Enable pin is set to LOW the regulator
reduces its internal bias and shuts off the output, this term is
called the disable current (I
DIS
).
Current Limit
Current Limit is value of output current by which output
voltage drops below 90% of its nominal value.
PSRR
Power Supply Rejection Ratio is defined as ratio of output
voltage and input voltage ripple. It is measured in decibels
(dB).
Line Transient Response
Typical output voltage overshoot and undershoot
response when the input voltage is excited with a given
slope.
Load Transient Response
Typical output voltage overshoot and undershoot
response when the output current is excited with a given
slope between low-load and high-load conditions.
Thermal Protection
Internal thermal shutdown circuitry is provided to protect
the integrated circuit in the event that the maximum junction
temperature is exceeded. When activated at typically 175°C,
the regulator turns off. This feature is provided to prevent
failures from accidental overheating.
Maximum Package Power Dissipation
The power dissipation level is maximum allowed power
dissipation for particular package or power dissipation at
which the junction temperature reaches its maximum
operating value, whichever is lower.
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NCV47821
APPLICATIONS INFORMATION
Circuit Description
The NCV47821 is an integrated dual low dropout
regulator that provides a regulated voltage at 200 mA to each
output. It is enabled with an input to the enable pin. The
regulator voltage is provided by a PNP pass transistor
controlled by an error amplifier with a bandgap reference,
which gives it the lowest possible dropout voltage. The
output current capability of the LDO is 200 mA per output
and the base drive quiescent current is controlled to prevent
oversaturation when the input voltage is low or when the
output is overloaded. The integrated current sense feature
provides diagnosis and system protection functionality. The
current limit of the device is adjustable by resistor connected
to CSO pin. Voltage on CSO pin is proportional to output
current. The regulator is protected by both current limit and
thermal shutdown. Thermal shutdown occurs above 150°C
to protect the IC during overloads and extreme ambient
temperatures.
Regulator
The error amplifier compares the reference voltage to a
sample of the output voltage (V
) and drives the base of
out1,2
a PNP series pass transistor via a buffer. The reference is a
bandgap design to give it a temperature stable output.
Saturation control of the PNP is a function of the load current
and input voltage. Oversaturation of the output power
device is prevented, and quiescent current in the ground pin
is minimized.
Regulator Stability Considerations
The input capacitor (Cin) is necessary to stabilize the input
impedance to avoid voltage line influences. The output
capacitor (C
) helps determine three main
out1,2
characteristics of a linear regulator: startup delay, load
transient response and loop stability. The capacitor value
and type should be based on cost, availability, size and
temperature constraints. The aluminum electrolytic
capacitor is the least expensive solution, but, if the circuit
operates at low temperatures (−25°C to −40°C), both the
value and ESR of the capacitor will vary considerably. The
capacitor manufacturer’s data sheet usually provides this
information. The value for the output capacitor C
out1,2
shown in Figure 1 should work for most applications; see
also Figure 16 for output stability at various load and Output
Capacitor ESR conditions. Stable region of ESR in
Figure 16 shows ESR values at which the LDO output
voltage does not have any permanent oscillations at any
dynamic changes of output load current. Marginal ESR is
the value at which the output voltage waving is fully damped
during four periods after the load change and no oscillation
is further observable.
ESR characteristics were measured with ceramic
capacitors and additional series resistors to emulate ESR.
Low duty cycle pulse load current technique has been used
to maintain junction temperature close to ambient
temperature.
Calculating Bypass Capacitor
If improved stability (reducing output voltage ringing
during transients) is demanded, connect the bypass
capacitor C
between Adjustable Input pin and V
b1,2
according to Applications circuit at Figure 1. Parallel
combination of bypass capacitor C
resistor R
contributes in the device transfer function as an
n1
with the feedback
b1,2
additional zero and affects the device loop stability,
therefore its value must be optimized. Attention to the
Output Capacitor value and its ESR must be paid. See also
Stability in High Speed Linear LDO Regulators Application
Note, AND8037/D for more information. Optimal value of
bypass capacitor is given by following expression
Cbn+
2 p f
1
z
R
(F)
n1
where
the upper feedback resistor
R
1
n
f
the frequency of the zero added into the device
z
transfer function by R
and Cb1 external
1
n
components.
Set the R
Chose the f
resistor according to output voltage requirement.
n1
with regard on the output capacitance C
z
refer to the table below.
C
(mF)
out1,2
fZ range (kHz)max 19max 19N/A*N/A*
NOTE: * For C
out1,2
needed for stability improvement. C
useful for reduction start up overshoot and noise
reduction. See electrical characteristic table.
102247100
= 47 mF and higher, C
capacitors are not
b1,2
capacitors are
b1,2
Ceramic capacitors and its part numbers listed bellow
have been used as low ESR output capacitors C
the table above to define the frequency ranges of additional
zero required for stability:
GRM31CR71C106KAC7 (10 mF, 16 V, X7R, 1206)
,
GRM32ER71C226KE18 (22 mF, 16 V, X7R, 1210)
GRM32ER61C476ME15 (47 mF, 16 V, X5R, 1210)
GRM32ER60J107ME20 (100 mF, 6.3 V, X5R, 1210)
Enable Inputs
An enable pin is used to turn a channel on or off. By
holding the pin down to a voltage less than 0.99 V, the output
of the channel will be turned off. When the voltage on the
enable pin is greater than 2.31 V, the output of the channel
will be enabled to power its output to the regulated output
voltage. The enable pins may be connected directly to the
input pin to give constant enable to the output channel.
out1,2
out1,2
pin
(eq. 1)
out1,2
from
,
www.onsemi.com
11
NCV47821
Setting the Output Voltage
The output voltage range can be set between 3.3 V and
20 V. This is accomplished with an external resistor divider
feeding back the voltage to the IC back to the error amplifier
by the voltage adjust pin ADJ. The internal reference voltage
is set to a temperature stable reference (V
) of 1.265 V.
REF1
The output voltage is calculated from the following formula.
Ignoring the bias current into the ADJ pin:
R
V
out_nom_n
+ V
REF1
ǒ
1 )
n1
Ǔ
R
n2
(eq. 2)
Use Rn2 < 50 kW to avoid significant voltage output errors
due to ADJ bias current.
Designers should consider the tolerance of R
and R
n1
n2
during the design phase.
Setting the Output Current Limit
The output current limit can be set up to 300 mA by
external resistor R
1 mF in parallel with R
(see Figure 1). Capacitor C
CSO1,2
is required for stability of current
CSO
CSO
of
limit control circuitry (see Figure 1).
V
CSO1,2
I
LIM1,2
R
CSO1,2
+ I
out1,2
+
+
100
1
ǒ
R
100
1
CSO1,2
R
2.55
CSO1,2
2.55
I
LIM1,2
1
100
Ǔ
(eq. 3)
(eq. 4)
(eq. 5)
where
R
− current limit setting resistor
CSO1,2
voltage at CSO pin proportional to I
V
CSO1,2
I
− current limit value
LIM1,2
− output current actual value
I
out1,2
out1,2
CSO pin provides information about output current actual
value. The CSO voltage is proportional to output current
according to Equation 3.
Once output current reaches its limit value (I
external resistor R
2.55 V. Calculations of I
than voltage at CSO pin is typically
CSO
or R
LIM1,2
CSO1,2
values can be
LIM1,2
) set by
done using Equation 4 and Equation 5, respectively.
Minimum and maximum value of Output Current Limit can
be calculated according Equation 6 and 7.
V
max
R
V
CSO1,2_min
CSO1,2_max
CSO1,2_max
R
CSO1,2_min
(eq. 6)
(eq. 7)
I
LIM1,2_min
I
LIM1,2_max
+ RATIO
+ RATIO
min
where
RATIO
− minimum value of Output Current to
min
CSO Current Ratio from electrical
characteristics table and particular output
current range
RATIO
− maximum value of Output Current to
max
CSO Current Ratio from electrical
characteristics table and particular output
current range
V
CSO1,2_min
minimum value of CSO Voltage Level at
Current Limit from electrical characteristics
table
V
CSO1,2_max
maximum value of CSO Voltage Level at
Current Limit from electrical characteristics
table
R
CSO1,2_min
− minimum value of R
CSO1,2
with respect
its accuracy
R
CSO1,2_max
− maximum value of R
CSO1,2
with respect
its accuracy
Designers should consider the tolerance of R
CSO1,2
during the design phase.
Diagnostic in OFF State
The NCV47821 contains also circuitry for OFF state
diagnostics for Short to Battery (STB) and Open Load (OL).
There are internal current sources, Pull−Up and Pull Down
resistors which provide additional cost savings for overall
application by excluding external components and their
assembly cost and saving PCB space and safe control IOs of
a Microcontroller Unit (MCU).
Simplified functional schematic and truth table is shown
in Figure 19 and related flowchart in Figure 20.
Current source enabled via EN and DE pins
I
PU
PASS DEVICE is OFF in Diagnostics
state (DE = H).
Mode in OFF state
out
> V
out
out_OFF
< V
out
out_OFF
> V
out
out_OFF
< V
out
out_OFF
+
V
−
REF_OFF
Diagnostic Status/Action
Short to Battery (STB)
Check for Open Load (OL)
Open Load (OL)
No Failure (V
close to 0 V)
out
V
R
PD1
R
PD2
Digital Diagnostics:
to MCU’s digital input
with pull−up resistor
to MCU’s DIO supply rail
out
EF
V
in
Comparator active only in Diagnostic
EN
DE
EN – Enable(Logic Input)
DE – Diagnostics Enable(Logic Input)
EF – Error Flag Output(Open Collector Output)
EN DE IPUEFV
LL OFF HZ UnknownNone (Diagnostics OFF)
LH OFF L V
LH OFF HZ V
HHONLV
H H ON HZ V
Figure 19. Simplified Functional Diagram of OFF
State Diagnostics (STB and OL)
www.onsemi.com
12
NCV47821
Start
Diag. OFF. Set
EN = L & DE = L
Diag. ON. Set
EN = L & DE = H
HZ
IPU ON. Set
EN = H & DE = H
HZ
No FailureOpen LoadShort to Battery
EF = ?
EF = ?
L
L
Figure 20. Flowchart for Diagnostics in OFF State
The diagnostics in OFF state shall be performed for each
channel separately. For diagnostics of Channel 1 the input
CS pin has to be put logic low, for diagnostics of Channel 2
the input CS pin has to be put logic high. Corresponding EN
pin has to be used for control (EN1 for Channel 1 and EN2
for Channel 2). For detailed information see Diagnostic
Features Truth Table in Figure 21.
Diagnostic in ON State
Diagnostic in ON State provides information about
Overcurrent or Short to Ground failures, during which the
EF output is in logic low state. The diagnostics in ON state
shall be performed for each channel separately. For
diagnostics of Channel 1 the input CS pin has to be put logic
low, for diagnostics of Channel 2 the input CS pin has to be
put logic high. For detailed information see Diagnostic
Features Truth Table in Figure 21.
Figure 21. Diagnostic Features Truth Table
13.State of EN pin of appropriate channel
14.CS = L means CH1 diagnostics and CS = H means CH2 diagnostics in OFF state (DE = H) via EF output, appropriate EN pin is used for
turning internal switch ON and OFF (e.g. when DE = H and CS = L and EN1 = L then IPU1 is OFF, when DE = H and CS = L and EN1 =
H then IPU1 is ON)
15.Internal current source turned OFF (between V
16.Internal current source turned ON (between V
17. CS = L means CH1 diagnostics and CS = H means CH2 diagnostics in ON state (e.g. when CS = L and EF = L then CH1 has Overcurrent
or Short to Ground failure, when CS = H and EF = L then CH1 has Overcurrent or Short to Ground failure)
out
out
and V
and V
of appropriate channel)
in
of appropriate channel)
in
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13
NCV47821
Thermal Considerations
As power in the device increases, it might become
necessary to provide some thermal relief. The maximum
power dissipation supported by the device is dependent
upon board design and layout. Mounting pad configuration
on the PCB, the board material, and the ambient temperature
affect the rate of junction temperature rise for the part. When
the device has good thermal conductivity through the PCB,
the junction temperature will be relatively low with high
power applications. The maximum dissipation the device
can handle is given by:
ƪ
T
P
D(MAX)
+
J(MAX)
R
Since TJ is not recommended to exceed 150°C, then the
device soldered on 645 mm
2
, 1 oz copper area, FR4 can
dissipate up to 2.38 W when the ambient temperature (T
is 25°C. See Figure 22 for R
versus PCB area. The power
JA
q
dissipated by the device can be calculated from the
following equations:
PD[ V
in
ǒ
Iq@I
out1,2
Ǔ
) I
out1
ǒ
Vin−V
or
V
in(MAX)
P
[
D(MAX)
)ǒV
out1
I
out1
I
) I
qJA
out1
out1
out2
* T
Ǔ)ǒ
Ǔ
) I
) I
ƫ
A
out2
V
q
out2
ǒ
Vin−V
I
(eq. 8)
(eq. 9)
out2
(eq.
10)
Ǔ
out2
A
130
120
110
100
90
80
70
60
2 oz, Single Layer
50
40
, THERMAL RESISTANCE (°C/W)
JA
30
q
R
20
COPPER HEAT SPREADER AREA (mm2)
)
Figure 22. Thermal Resistance vs. PCB Copper Area
1 oz, Single Layer
1 oz, 4 Layer
2 oz, 4 Layer
600 7005004003002001000
Hints
Vin and GND printed circuit board traces should be as
wide as possible. When the impedance of these traces is
high, there is a chance to pick up noise or cause the regulator
Ǔ
to malfunction. Place external components, especially the
output capacitor, as close as possible to the device and make
traces as short as possible.
ORDERING INFORMATION
DeviceOutput VoltageMarkingPackageShipping
NCV47821PAAJR2GAdjustableLine1: NCV4
Line2: 7821
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D
TSSOP−14 Exposed Pad
(Pb−Free)
2500 / Tape & Reel
†
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14
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
14
TSSOP−14 EP
CASE 948AW
1
SCALE 1:1
NOTE 6
B
148
c1
NOTE 5
E1
E
c
PIN 1
REFERENCE
NOTE 6
0.05 C
0.10 C
14X
A
e
1
TOP VIEW
D
NOTE 4
14X
NOTE 3
b
0.10
7
C
2X 14 TIPS
A2
BA
0.20 C
A
SS
C
BA
SEATING
PLANE
B
c
B
SIDE VIEW
D2
H
E2
A1
NOTE 7
DETAIL A
BOTTOM VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
3.40
3.06
1
0.65
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
14X
1.15
6.70
14X
0.42
ISSUE C
b
b1
SECTION B−B
NOTE 8
DETAIL A
END VIEW
L
L2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE PROTRUSION SHALL BE
0.07 mm MAX. AT MAXIMUM MATERIAL CONDITION.
DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OF THE FOOT. MINIMUM SPACE BETWEEN PROTRUSION AND ADJACENT LEAD IS 0.07.
4. DIMENSION D DOES NOT INCLUDE MOLD FLASH,
PROTRUSIONS OR GATE BURRS. MOLD FLASH,
PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED
0.15 mm PER SIDE. DIMENSION D IS DETERMINED AT
DATUM H.
5. DIMENSION E1 DOES NOT INCLUDE INTERLEAD
FLASH OR PROTRUSIONS. INTERLEAD FLASH OR
PROTRUSIONS SHALL NOT EXCEED 0.25 mm PER
SIDE. DIMENSION E1 IS DETERMINED AT DATUM H.
6. DATUMS A AND B ARE DETERMINED AT DATUM H.
7. A1 IS DEFINED AS THE VERTICAL DISTANCE FROM
C
M
GAUGE
PLANE
THE SEATING PLANE TO THE LOWEST POINT ON THE
PACKAGE BODY.
8. SECTION B−B TO BE DETERMINED AT 0.10 TO 0.25 mm
FROM THE LEAD TIP.
MILLIMETERS
DIM MINMAX
A−−−−1.20
A10.050.15
A20.801.05
b0.190.30
b10.190.25
c0.090.20
c10.090.16
D4.905.10
D23.093.62
E6.40 BSC
E14.304.50
E22.693.22
0.65 BSCe
L0.450.75
L20.25 BSC
M0 8
__
GENERIC
MARKING DIAGRAM*
14
XXXX
XXXX
ALYWG
G
1
XXXX= Specific Device Code
A= Assembly Location
L= Wafer Lot
Y= Year
W= Work Week
G= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
DATE 09 OCT 2012
DOCUMENT NUMBER:
DESCRIPTION:
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ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
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