ON Semiconductor NCV4299 Technical data

查询NCV4299D1供应商

NCV4299

150 mA Low−Dropout
Voltage Regulator

The NCV4299 i s a f amily o f preci sion m icropower v oltage r egulators

with an output current capability of 150 mA. It is available in 5.0 V or

3.3 V output voltage, and is housed in an 8−lead SO N and in a 14−lead
SON (fused) package.

The output voltage is accurate within "2% with a maximum
dropout voltage of 0.5 V at 100 mA. Low Quiescent current is a
feature drawing only 90 mA with a 1 mA load. This part is ideal for any
and all battery operated microprocessor equipment.

The device features microprocessor interfaces including an
adjustable reset output and adjustable system monitor to provide
shutdown early warning. An inhibit function is available on the
14−lead part. With inhibit active, the regulator turns off and the device
consumes less than 1.0 mA of quiescent current.

The part can withstand load dump transients making it suitable for
use in automotive environments.

Features

• 5.0 V, 3.3 V "2%, 150 mA

• Extremely Low Current Consumption

♦ 90 mA (Typ) in the ON Mode
♦ t1.0 mA in the Off Mode

• Early Warning

• Reset Output Low Down to V

• Adjustable Reset Threshold

• Wide Temperature Range

• Fault Protection

♦ 60 V Peak Transient Voltage
♦ −40 V Reverse Voltage
♦ Short Circuit
♦ Thermal Overload

• Internally Fused Leads in the SO−14 Package

• Inhibit Function with mA Current Consumption in the Off Mode

• NCV Prefix for Automotive and Other Applications Requiring Site

and Change Control

• Pb−Free Packages are Available

= 1.0 V

Q

http://onsemi.com

8

1

14

1

xx = 33 (3.3 V Version)

A = Assembly Location
L, WL = Wafer Lot
Y = Year
W, WW = Work Week
G = Pb−Free Package
G = Pb−Free Package
(Note: Microdot may be in either location)

SO−8
D SUFFIX
CASE 751

14

SO−14

D SUFFIX

CASE 751A

= 50 (5.0 V Version)

PIN CONNECTIONS

18

1

14

1

MARKING

DIAGRAMS

8

4299

ALYW

G

1

NCV4299G

AWLYWW

V4299xxG

AWLYWW

QI
SOSI

RORADJ
GNDD

© Semiconductor Components Industries, LLC, 2006

April, 2006 − Rev. 16

114

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 21 of this data sheet.

1 Publication Order Number:

SIRADJ
ID
GNDGND
GNDGND

GNDGND
QINH
SORO

NCV4299/D

NCV4299

RADJ

I

Current Limit and

Bandgap

Reference

SI

−
+

1.36 V
+

−

Saturation Sense

+
+

−

8 mA

1.85 V

D GND

−
+

R

SO

Q

R

RO

SO

RO

Figure 1. SO−8 Simplified Block Diagram

PIN FUNCTION DESCRIPTION − SO−8 PACKAGE

Pin Symbol Description

1 I Input. Battery Supply Input Voltage. Bypass directly to GND with ceramic capacitor.
2 SI Sense Input. Can provide an early warning signal of an impending reset condition when used with SO.

3 RADJ Reset Adjust. Use resistor divider to Q to adjust reset threshold lower. Connect to GND if not used.
4 D Reset Delay. Connect external capacitor to ground to set delay time.
5 GND Ground.
6 RO

7 SO

8 Q

Connect to Q if not used.

Reset Output. NPN collector output with internal 20 kW pullup to Q. Notifies user of out of regulation condi-
tion. Leave open if not used.

Sense Output. NPN collector output with internal 20 kW pullup to Q. Can be used to provide early warning
of an impending reset condition. Leave open if not used.

5.0 V, 3.3 V, "2%, 150 mA out put. Use 22 mF, ESR t 5.0 W to ground.

http://onsemi.com

2

NCV4299

INH

RADJ

I

Current Limit and

Bandgap

Reference

SI

−
+

1.36 V
+

−

Saturation Sense

+
+

−

8 mA

1.85 V

D GND

−
+

R

SO

Q

R

RO

SO

RO

Figure 2. SO−14 Simplified Block Diagram

PIN FUNCTION DESCRIPTION − SO−14 PACKAGE

Pin Symbol Description

1 RADJ Reset Adjust. Use resistor divider to Q to adjust reset threshold lower. Connect to GND if not used.
2 D Reset Delay. Connect external capacitor to ground to set delay time.
3 GND Ground.
4 GND Ground.
5 GND Ground.
6 INH Inhibit. Connect to I if not needed. A high turns the regulator on.
7 RO

8 SO

9 Q
10 GND Ground.
11 GND Ground.
12 GND Ground.
13 I Input. Battery Supply Input Voltage.
14 SI Sense Input. Can provide an early warning signal of an impending reset condition when used with SO.

Reset Output. NPN collector output with internal 20 kW pullup to Q. Notifies user of out of regulation condi-
tion.

Sense Output. NPN collector output with internal 20 kW pullup to Q. Can be used to provide early warning
of an impending reset condition.

5.0 V, 3.3 V, "2%, 150 mA out put. Use 22 mF, ESR t 5.0 W to ground.

http://onsemi.com

3

NCV4299

MAXIMUM RATINGS

Rating Symbol Min Max Unit

Input Voltage to Regulator (DC) V

I

Input Peak Transient Voltage to Regulator wrt GND − − 60 V
Inhibit (INH) (Note 1) V
Sense Input (SI) V
Sense Input (SI) I
Reset Threshold (RADJ) V
Reset Threshold (RADJ) I
Reset Delay (D) V
Reset Output (RO) V
Sense Output (SO) V
Output (Q) V
Output (Q) I

ESD Capability, Human Body Model (Note 5) ESD
ESD Capability, Machine Model (Note 5) ESD

ESD Capability, Charged Device Model (Note 5) ESD
Junction Temperature T
Storage Temperature T

INH

SI

SI

RE

RE

D

RO

SO

Q

Q

HB

MM

CDM

J

stg

−40 45 V

−40 45 V

−0.3 45 V

−1.0 1.0 mA

−0.3 7.0 V

−10 10 mA

−0.3 7.0 V

−0.3 7.0 V

−0.3 7.0 V

−0.3 16 V

−5.0 − mA

2.0 − kV

200 − V

1.0 − kV

− 150 °C

−50 150 °C

OPERATING RANGE

Input Voltage

5.0 V Version

3.3 V Version

Junction Temperature T

V

I

J

4.5

4.4

45
45

−40 150 °C

V

LEAD TEMPERATURE SOLDERING REFLOW (Note 3)

Lead Temperature Soldering (Note 5)
Reflow (SMD styles only), leaded
60−150 sec above 183, 30 sec max at peak

Reflow (SMD styles only), lead free
60s−150 sec above 217, 40 sec max at peak

Moisture Sensitivity Level MSL Level 1

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.

1. 14 pin package only.

2. Preliminary numbers.

3. Per IPC / JEDEC J−STD−020C.

4. Measured to Pin 4. All ground pins connected to ground.

5. This device series incorporates ESD protection and is tested by the following methods:
ESD HBM tested per AEC−Q100−002 (EIA/JESD22−A114)
ESD MM tested per AEC−Q100−003 (EIA/JESD22−A115)
ESD CDM tested per EIA/JES D22/C101, Field Induced Charge Model.

T

SLD

°C

− 240 Pk

T

SLD

− 265 Pk

°C

http://onsemi.com

4

THERMAL CHARACTERISTICS

Characteristic

SO−8

SO−14

6. 2 oz Copper, 50 mm sq Copper area, 1.5 mm thick FR4

7. 2 oz Copper, 150 mm sq Copper area, 1.5 mm thick FR4

8. 2 oz Copper, 500 mm sq Copper area, 1.5 mm thick FR4

Junction−to−Tab (y
Junction−to−Ambient (R

Junction−to−Tab (y
Junction−to−Ambient (R

JLx

JLx

, q

, q

θ

θ

JLx

JA

JLx

JA

)

, qJA)

)

, qJA)

NCV4299

Test Conditions (Typical Value)

Note 6 Note 7 Note 8

54

172

19

112

52

144

21
89

48

118

20
67

Unit

°C/W

°C/W

ELECTRICAL CHARACTERISTICS (−40°C < T

Characteristic Symbol Test Conditions Min Typ Max Unit

Output Q

Output Voltage (5.0 V Version) V
Output Voltage (3.3 V Version) V
Current Limit I
Quiescent Current (Iq = II – IQ) I
Quiescent Current (Iq = II – IQ) I
Quiescent Current (Iq = II – IQ) I
Quiescent Current (Iq = II – IQ) I
Quiescent Current (Iq = II – IQ) I
Dropout Voltage (Note 9) V
Load Regulation
Line Regulation
Power Supply Ripple Rejection P

Inhibit (INH) (14 Pin Package Only)

Inhibit Off Voltage V
Inhibit On Voltage

5.0 V Version

3.3 V Version

DV
DV

SRR

INHOFFVQ

V

INHON

< 150°C; VI = 13.5 V unless otherwise noted.)

J

1.0 mA < IQ < 150 mA, 6.0 V < VI < 16 V 4.9 5.0 5.1 V

Q

1.0 mA < IQ < 150 mA, 5.5 V < VI < 16 V 3.23 3.3 3.37 V

Q

Q

INH ON, IQ < 1.0 mA, TJ = 25°C − 86 100

q

INH ON, IQ < 1.0 mA − 90 105

q

INH ON, IQ = 10 mA − 170 500

q

INH ON, IQ = 50 mA − 0.7 2.0 mA

q

INH = 0 V, TJ = 25°C − − 1.0

q

IQ = 100 mA − 0.22 0.50 V

dr

IQ = 1.0 mA to 100 mA − 5.0 30 mV

Q

VI = 6.0 V to 28 V, IQ = 1.0 mA − 10 25 mV

Q

− 250 400 500 mA

ƒr = 100 Hz, Vr = 1.0 Vpp, IQ = 100 mA − 66 − dB

< 1.0 V − − 0.8 V

VQ > 4.85 V
VQ > 3.2 V

3.5

3.5

−

−

mA
mA
mA

mA

V

−

−

Input Current I

INHON

I

INHOFF

INH ON
INH = 0 V

−

−

Reset (RO)

Switching Threshold

5.0 V Version

3.3 V Version
Output Resistance R
Reset Output Low Voltage

5.0 V Version

3.3 V Version
Allowable External Reset Pullup Resistor V
Delay Upper Threshold V
Delay Lower Threshold V

V

rt

RO

V

RO

ROext

UD

LD

−

4.50

2.96

− 10 20 40

Q < 4.5 V, Internal RRO, IRO = −1.0 mA

−−0.17

Q < 2.96 V, Internal RRO, IRO = −1.0 mA
External Resistor to Q 5.6 − −

− 1.5 1.85 2.2 V

− 0.4 0.5 0.6 V

9. Measured when the output voltage VQ has dropped 100 mV from the nominal value obtained at VI = 13.5 V.

http://onsemi.com

5

3.0

0.5102.0

4.60

4.80

3.06

3.16

0.40

0.17

0.40

mA

V

kW

V

kW

NCV4299

ELECTRICAL CHARACTERISTICS (continued) (−40°C < T

< 150°C; VI = 13.5 V unless otherwise noted.)

J

Characteristic Symbol Test Conditions Min Typ Max Unit

Reset (RO)

Delay Output Low Voltage

5.0 V Version

3.3 V Version
Delay Charge Current

5.0 V Version

3.3 V Version
Power On Reset Delay Time t
Reset Reaction Time t
Reset Adjust Switching Threshold

5.0 V Version

3.3 V Version

V

I

D

rr

V

RADJ,TH

D

Q < 4.5 V, Internal R
Q < 2.96 V, Internal R

Q < 4.5 V, Internal RRO, VD = 1.0 V
Q < 2.96 V, Internal RRO, VD = 1.0 V

C

d

= 100 nF 17 28 35 ms

D

C

= 100 nF 0.5 2.2 4.0

D

Q > 3.5 V
Q > 2.3 V

RO

RO

Input Voltage Sense (SI and SO)

Sense Input Threshold High V
Sense Input Threshold Low V

SI,HIGH

SI,LOW

− 1.34 1.45 1.54 V

− 1.26 1.36 1.44 V

Sense Input Hysteresis − (Sense Threshold High) −

(Sense Threshold Low)
Sense Input Current I
Sense Output Resistance R
Sense Output Low Voltage V
Allowable External Sense Out

R

Pullup Resistor

SI

SO

SO

SOext

VSI < 1.20 V, VI > 4.2 V, ISO = 0 mA

− −1.0 0.1 1.0

− 10 20 40

− 5.6 − −

−

−−0.017

4.0−7.1

0.1

0.1

12

−

−

1.26−1.36−1.44

−

50 90 130 mV

− 0.1 0.4 V

V

mA

ms

V

mA
kW

kW

SI High to SO High Reaction Time t
SI Low to SO Low Reaction Time t

V

I

I

V

INH

(14−Pin Part Only)

INH

100 nF

I

V

RADJ

V

SI

RADJ

I

pdSOLH

pdSOHL

I

I

I

INH

I

D

D

C

D

I

D

Q

RO

NCV4299

RADJ

SI

SI

SO

GND

I

q

Figure 3. Measurement Circuit

− − 4.4 8.0

− − 3.8 5.0

I

Q

V

Q

V

RO

V

SO

ms
ms

http://onsemi.com

6

NCV4299

5

5.1

0

TYPICAL PERFORMANCE CHARACTERISTICS − 5.0 V OPTION

6

VI = 13.5 V

= 1 kW

R

L

5

4

5.0

VQ VOLTS

4.9

−40 80

−20 60 1004020 120
TEMPERATURE C

Figure 4. Output Voltage VQ vs. Temperature TJ

8.0
VI = 13.5 V

VD = 1 V
RL = 5 kW

7.0

CHARGE CURRENT, mA

6.0

−40 80

−20 60 1004020 120
TEMPERATURE C

3

2

1

OUTPUT VOLTAGE, VQ VOLTS

1600 140

0

010

5

INPUT VOLTAGE, VI VOLTS

RL = 50 W

1

Figure 5. Output Voltage VQ vs. Input Voltage

500

400

300

200

DROP VOLTAGE, Vdr, mV

100

0

1600 140

0 100

OUTPUT CURRENT IQ, mA

125°C

−40°C

50

25°C

150

Figure 6. Charge Current ld, c vs. Temperature TJ Figure 7. Drop Voltage Vdr vs. Output Current IQ

3.2

2.8

2.4
V

V

LD, VI

UD

= 13.5V

40 120

TEMPERATURE, C

2.0

1.6

1.2

0.8

SWITCHING VOLTAGE, V

0.4

0.0

−40 80

Figure 8. Switching Voltage VUD and VLD vs.

Temperature TJ

1600

1.5

1.4

1.3

1.2

VRADJTH, V

1.1

1.0

0.9

−40 80

0

40 120 16

TEMPERATURE TJ, C

Figure 9. Reset Adjust Switching Threshold

VRADJTH vs. Temperature TJ

http://onsemi.com

7