ON Semiconductor NCV33163 Technical data

查询NCV33163供应商
NCV33163
Product Preview
2.5 A, Step−Up/Down/ Inverting Switching Regulators
The NCV33163 series are monolithic power switching regulators that contain the primary functions required for dc-to-dc converters. This series is specifically designed to be incorporated in step-up, step-down, and voltage-inverting applications with a minimum number of external components.
These devices consist of two high gain voltage feedback comparators, temperature compensated reference, controlled duty cycle oscillator, driver with bootstrap capability for increased efficiency, and a high current output switch. Protective features consist of cycle-by-cycle current limiting, and internal thermal shutdown. Also included is a low voltage indicator output designed to interface with microprocessor based systems.
These devices are contained in a 16 pin dual-in-line heat tab plastic package for improved thermal conduction.
Output Switch Current in Excess of 2.0 A
Operation from 2.5 V to 60 V
Low Standby Current
Precision 2% Reference
Controlled Duty Cycle Oscillator
Driver with Bootstrap Capability for Increased Efficiency
Cycle-by-Cycle Current Limiting
Internal Thermal Shutdown Protection
Low Voltage Indicator Output for Direct Microprocessor Interface
Heat Tab Power Package
Moisture Sensitivity Level (MSL) Equals 1
NCV Prefix, for Automotive and Other Applications Requiring Site
and Change Control
OC
Input
16
1
16
1
LVI Output
Voltage Feedback 2
Voltage Feedback 1
Timing Capacitor
Ipk Sense
http://onsemi.com
16
PDIP-16
P SUFFIX
CASE 648C
1
SO-16W DW SUFFIX CASE 751G
A = Assembly Location WL = Wafer Lot YY = Year WW = Work Week
PIN CONNECTIONS
116
15
14
13
12
11
10
9
Gnd
2
3
4
5
6
V
7
CC
8
MARKING
DIAGRAMS
NCV33163P AWLYYWW
16
NCV33163DW
AWLYYWW
1
Bootstrap Input
Switch Emitter
Gnd
Switch Collector
Driver Collector
This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice.
Semiconductor Components Industries, LLC, 2002
November, 2002 - Rev. 0
1 Publication Order Number:
(Top View)
ORDERING INFORMATION
Device Package Shipping
NCV33163DW SO-16W 47 Units/Rail NCV33163DWR2 SO-16W 1000 Tape &
NCV33163P PDIP-16
Reel
25 Units/Rail
NCV33163/D
NCV33163
Ipk Sense
V
Timing
Capacitor
Gnd
Voltage
Feedback 1
Voltage
Feedback 2
LVI Output
8
7
CC
6
OSC
5
I
Limit
+
+
Control Logic
and Thermal
4
Shutdown
+
3
VFB
2
LVI
+
1
+
+ +
+
(Bottom View)
This device contains 114 active transistors.
Figure 1. Representative Block Diagram
9
10
11
12
13
14
15
16
Driver Collector
Switch Collector
Gnd
Switch Emitter
Bootstrap Input
MAXIMUM RATINGS (Note 1)
Rating
Power Supply Voltage V Switch Collector Voltage Range V Switch Emitter Voltage Range V Switch Collector to Emitter Voltage V Switch Current (Note 2) I Driver Collector Voltage V Driver Collector Current I Bootstrap Input Current Range (Note 2) I Current Sense Input Voltage Range V Feedback and Timing Capacitor Input Voltage Range V Low Voltage Indicator Output Voltage Range V Low Voltage Indicator Output Sink Current I Thermal Characteristics
P Suffix, Dual-In-Line Case 648C
Thermal Resistance, Junction-to-Air Thermal Resistance, Junction- to- Case (Pins 4, 5, 12, 13)
DW Suffix, Surface Mount Case 751G
Thermal Resistance, Junction-to-Air
Thermal Resistance, Junction- to- Case (Pins 4, 5, 12, 13) Operating Junction Temperature T Operating Ambient Temperature T Storage Temperature Range T
Symbol Value Unit
C(switch) E(switch)
CE(switch)
C(driver)
C(driver)
Ipk (Sense)
CC
SW
BS
in
C(LVI)
C(LVI)
R
JA
R
JC
R
JA
R
JC
J
A
stg
60 V
-1.0 to + 60 V
- 2.0 to V
C(switch)
60 V
2.5 A
-1.0 to +60 V 150 mA
-100 to +100 mA
(VCC-7.0) to (VCC+1.0) V
-1.0 to + 7.0 V
-1.0 to + 60 V 10 mA
°C/W
80 15
94 18
+150 °C
- 40 to + 115 °C
- 65 to +150 °C
V
http://onsemi.com
2
NCV33163
ELECTRICAL CHARACTERISTICS (V
T
= -40°C to +115°C.)
A
Characteristic
= 15 V, Pin 16 = VCC, CT = 620 pF, for typical values TA = 25°C, for min/max values
CC
Symbol Min Typ Max Unit
OSCILLATOR
Frequency
TA = 25°C Total Variation over V
= 2.5 V to 60 V, and Temperature
CC
Charge Current I Discharge Current I Charge to Discharge Current Ratio I Sawtooth Peak Voltage V Sawtooth Valley Voltage V
f
OSC
chg
dischg
chg/Idischg
OSC(P) OSC(V)
46 45
50
-
- 225 - A
- 25 - A
8.0 9.0 10 -
- 1.25 - V
- 0.55 - V
FEEDBACK COMPARATOR 1
Threshold Voltage
TA = 25°C Line Regulation (V Total Variation over Line, and Temperature
Input Bias Current (V
= 2.5 V to 60 V, TA = 25°C)
CC
= 5.05 V) I
FB1
V
th(FB1)
IB(FB1)
4.9
-
4.85
5.05
0.008
-
- 100 200 A
FEEDBACK COMPARATOR 2
Threshold Voltage
TA = 25°C Line Regulation (V Total Variation over Line, and Temperature
Input Bias Current (V
= 2.5 V to 60 V, TA = 25°C)
CC
= 1.25 V) I
FB2
V
th(FB2)
IB(FB2)
1.225
-
1.213
1.25
0.008
-
1.275
1.287
- 0.4 0 0.4 A
CURRENT LIMIT COMPARATOR
Threshold Voltage
= 25°C
T
A
Total Variation over V
Input Bias Current (V
= 2.5 V to 60 V, and Temperature
CC
Ipk (Sense)
= 15 V) I
V
th(Ipk Sense)
IB(sense)
-
230
250
-
- 1.0 20 A
DRIVER AND OUTPUT SWITCH (Note 3)
Sink Saturation Voltage (ISW = 2.5 A, Pins 14, 15 grounded)
Non-Darlington Connection (R Darlington Connection (Pins 9, 10, 11 connected)
= 110  to VCC, ISW/I
Pin 9
DRV
20)
Collector Off-State Leakage Current (VCE = 60 V) I Bootstrap Input Current Source (VBS = VCC + 5.0 V) I Bootstrap Input Zener Clamp Voltage (IZ = 25 mA) V
V
CE(sat)
C(off)
source(DRV)
Z
-
-
0.6
1.0
- 0.02 100 A
0.5 2.0 4.0 mA
VCC + 6.0 VCC + 7.0 VCC + 9.0 V
LOW VOLTAGE INDICATOR
Input Threshold (V Input Hysteresis (V Output Sink Saturation Voltage (I Output Off-State Leakage Current (VOH = 15 V) I
Increasing) V
FB2
Decreasing) V
FB2
= 2.0 mA) V
sink
th H
OL(LVI)
OH
1.07 1.125 1.18 V
- 15 - mV
- 0.15 0.4 V
- 0.01 5.0 A
TOTAL DEVICE
Standby Supply Current (V
Pins 6, 14, 15 = Gnd, remaining pins open)
= 2.5 V to 60 V, Pin 8 = VCC,
CC
I
CC
- 6.0 10 mA
1. This device series contains ESD protection and exceeds the following tests: Human Body Model 1500 V per MIL-STD-883, Method 3015. Machine Model Method 150 V.
2. Maximum package power dissipation limits must be observed.
3. Low duty cycle pulse techniques are used during test to maintain junction temperature as close to ambient as possible.
54 55
5.2
0.03
5.25
0.03
-
270
1.0
1.4
kHz
V
%/V
V
V
%/V
V
mV
V
http://onsemi.com
3
NCV33163
100
= 15 V
V
CC
T
= 25°C
A
1)t
, R
=
on
DT
2)ton, RDT = 20 k
3)ton, t
4)t
off
5)t
off
10
, RDT = 10 k
off
, RDT = 20 k , R
=
DT
1
2
3 4
, OUTPUT SWITCH ON−OFF TIME ( s)t
off
−t µ
1.0
on
0.1 C
, OSCILLATOR TIMING CAPACITOR (nF)
T
5
1.0 10
Figure 2. Output Switch On-Off Time
versus Oscillator Timing Capacitor
140
120
100
80
, INPUT BIAS CURRENT (A)µ
IB
I
60
−55
−25 0 25 50 75 100 125
, AMBIENT TEMPERATURE (°C)
T
A
Figure 4. Feedback Comparator 1 Input Bias
Current versus Temperature
VCC = 15 V V
= 5.05 V
FB1
2.0
0
−2.0
−4.0
, OSCILLATOR FREQUENCY CHANGE (%)
−6.0
−55
OSC
f
1300
1280
1260
1240
1220
1200
, COMPARATOR 2 THRESHOLD VOLTAGE (mV)
−55
th(FB2)
V
VCC = 15 V CT = 620 pF
−25 0 25 50 75 100 125
, AMBIENT TEMPERATURE (°C)
T
A
Figure 3. Oscillator Frequency Change
versus Temperature
VCC = 15 V
−25 0 25 50 75 100 T
, AMBIENT TEMPERATURE (°C)
A
Vth Max = 1275 mV
Vth Typ = 1250 mV
Vth Min = 1225 mV
Figure 5. Feedback Comparator 2 Threshold
Voltage versus Temperature
125
2.8
VCC = 15 V Pin 16 = VCC + 5.0 V
2.4
2.0
1.6
, BOOTSTRAP INPUT CURRENT SOURCE (mA)
1.2
−55 −25 0 25 50 75 100 125 T
, AMBIENT TEMPERATURE (°C)
source (DRV)
I
A
Figure 6. Bootstrap Input Current
Source versus T emperature
http://onsemi.com
4
7.6
IZ = 25 mA
7.4
7.2
7.0
6.8
−55 −25 0 25 50 75 100
, BOOTSTRAP INPUT ZENER CLAMP VOLTAGE (V)
Z
V
T
, AMBIENT TEMPERATURE (°C)
A
Figure 7. Bootstrap Input Zener Clamp
Voltage versus Temperature
125
NCV33163
V
THRESHOLD
VOLTAGE
(
V)
V
EMITTER
VOLTAGE
(V)
0
Darlington Configuration Emitter Sourcing Current to Gnd Pins 7, 8, 10, 11 = V Pins 4, 5, 12, 13 = Gnd T
= 25°C, (Note 2)
A
CC
−0.4
−0.8
Bootstrapped, Pin 16 = VCC + 5.0 V
−1.2
V
CC
, SOURCE SATURATION (V)
−1.6
CE (sat)
V
Non−Bootstrapped, Pin 16 = V
−2.0 0 0.8 2.4 3.2
, EMITTER CURRENT (A)
I
E
CC
1.6
Figure 8. Output Switch Source Saturation
versus Emitter Current
0
Gnd
−0.4
IC = 10 A
−0.8
−1.2
,
E
−1.6
IC = 10 mA
VCC = 15 V Pins 7, 8, 9, 10, 16 = V Pins 4, 6 = Gnd Pin 14 Driven Negative
−2.0
−55 −25 0 25 50 75 100 125
, AMBIENT TEMPERATURE (°C)
T
A
Figure 10. Output Switch Negative Emitter
Voltage versus Temperature
1.2
Darlington, Pins 9, 10, 11 Connected
1.0
0.8
Grounded Emitter Configuration Collector Sinking Current From V
0.6 Pins 7, 8 = VCC = 15 V
, SINK SATURATION (V)
CE (sat)
V
Pins 4, 5, 12, 13, 14, 15 = Gnd
0.4 T
= 25°C, (Note 2)
A
0.2
0
0 0.8 2.4 3.21.6
, COLLECTOR CURRENT (A)
I
C
CC
Saturated Switch, R
Gnd
= 110  to V
Pin9
CC
Figure 9. Output Switch Sink Saturation
versus Collector Current
0.5
VCC=5 V T
=25°C
A
0.4
0.3
0.2
CC
0.1
, OUTPUT SATURATION VOLTAGE (V)
0
OL (LVI)
0 2.0 4.0 6.0 8.0
V
I
, OUTPUT SINK CURRENT (mA)
sink
Figure 11. Low Voltage Indicator Output Sink
Saturation Voltage versus Sink Current
254
m
VCC = 15 V
252
250
,
248
th (Ipk Sense)
246
−55 −25 0 25 50 75 100 125
, AMBIENT TEMPERATURE (°C)
T
A
Figure 12. Current Limit Comparator Threshold
Voltage versus Temperature
1.6
µ
1.4
1.2
1.0
INPUT BIAS CURRENT ( A) ,
0.8
IB (Sense)
I
0.6
http://onsemi.com
5
VCC = 15 V V
Ipk (Sense)
= 15 V
−55 −25 0 25 50 75 100 125 T
, AMBIENT TEMPERATURE (°C)
A
Figure 13. Current Limit Comparator Input Bias
Current versus Temperature
Loading...
+ 11 hidden pages