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NCS20081
User Manual
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ON Semiconductor NCS20081, NCV20081 User Manual

Operational Amplifier, Low Power, 1.2 MHz, 42 mA
NCS20081/2/4, NCV20081/2/4
Amplifiers (Op Amps) with 1.2 MHz of Gain−Bandwidth Product (GBWP) While consuming only 42 mA of Quiescent current per opamp. The NCS2008x has Input Offset Voltage of 4 mV and operates from 1.8 V to 5.5 V supply voltage over a wide temperature range (−40°C to +125°C). The Rail−to−Rail In/Out operation allows the use of the entire supply voltage range while taking advantage of the
1.2 MHz GBWP. Thus, this family offers superior performance over many industry standard parts. These devices are AEC−Q100 qualified which is denoted by the NCV prefix.
NCS2008x’s low current consumption and low supply voltage performance in space saving packages, makes them ideal for sensor signal conditioning and low voltage current sensing applications in Automotive, Consumer and Industrial markets.
Features
• Wide Bandwidth: 1.2 MHz
• Low Supply Current/ Channel: 42 mA typ (V
• Low Input Offset Voltage: 4 mV max
• Wide Supply Range: 1.8 V to 5.5 V
• Wide Temperature Range: −40°C to +125°C
• Rail−to−Rail Input and Output
• Unity Gain Stable
• Available in Single, Dual and Quad Packages
• NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
= 1.8 V)
S
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SC70−5
CASE 419A
Micro8/MSOP8
CASE 846A
TSSOP−8
CASE 948S
14
1
SOIC−14
CASE 751A
5
1
TSOP−5/SOT23−5
CASE 483
8
1
SOIC−8
CASE 751
14
1
TSSOP−14
CASE 948G
6
1
UDFN6
CASE 517AP
Applications
• Automotive
• Battery Powered/ Portable
• Sensor Signal Conditioning
• Low Voltage Current Sensing
• Filter Circuits
• Unity Gain Buffer
© Semiconductor Components Industries, LLC, 2017
January, 2021 − Rev. 18
DEVICE MARKING INFORMATION
See general marking information in the device marking section on page 2 of this data sheet.
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of this data sheet.
1 Publication Order Number:
NCS2008/D
NCS20081/2/4, NCV20081/2/4
MARKING DIAGRAMS
Single Channel Configuration
NCS20081, NCV20081
XXMG
G
SC70−5
CASE 419A
8
XXXX AYW G
G
1
Micro8]/MSOP8
CASE 846A
14
XXXX XXXX
ALYWG
G
1
TSSOP−14
CASE 948G
5
XXXAYWG
G
1
TSOP−5/SOT23−5
CASE 483
Dual Channel Configuration
NCS20082, NCV20082
8
XXXXXX
ALYW
G
1
SOIC−8
CASE 751
Quad Channel Configuration
NCS20084, NCV20084
14
XXXXXXXXG
AWLYWW
1
SOIC−14
CASE 751A
1
XX MG
G
UDFN6
CASE 517AP
XXX
YWW
AG
TSSOP−8
CASE 948S
XXXXX = Specific Device Code A = Assembly Location WL, L = Wafer Lot Y = Year WW, W = Work Week G or G = Pb−Free Package
(Note: Microdot may be in either location)
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2
NCS20081/2/4, NCV20081/2/4
Single Channel Configuration
NCS20081, NCV20081
OUT
1
2
VSS
+
3
IN+
SC70−5, SOT23−5 (TSOP−5)
SQ2, SN2 Pinout
IN− 1
IN+ 1
VSS
1
2
3
4
Micro8/MSOP8, SOIC−8, TSSOP−8
OUT 1
5
VDD
−
4
IN−
Dual Channel Configuration
NCS20082, NCV20082
−
+
−
+
IN+
1
+
VSS
2
−
3
IN−
SC70−5, SOT23−5 (TSOP−5)
SQ3, SN3 Pinout
8
VDD
7
OUT 2
6
IN− 2
IN+ 2
5
5
VDD
4
OUT
Quadruple Channel Configuration
NCS20084, NCV20084
IN− 1
IN+ 1
VDD
IN+ 2
IN− 2
1
2
−
+
3
4
5
+
−
6
7
TSSOP−14, SOIC−14
OUT 1
OUT 2
VSS
NC
IN−
1
2
3
+
−
UDFN6 1.6 x 1.6
14
OUT 4
IN− 4
13
−
+
IN+ 4
12
VSS
11
IN+ 3
10
+
−
IN− 3
9
OUT 3
8
6
OUT
5
VDD
4
IN+
Figure 1. Pin Connections
ORDERING INFORMATION
Device Configuration Automotive Marking Package Shipping
NCS20081SQ2T2G
NCS20081SQ3T2G AAP SC70
NCS20081SN2T1G AER SOT23−5/TSOP−5
NCS20081SN3T1G AEU SOT23−5/TSOP−5
NCS20081MUTAG AP UDFN6
NCV20081SQ2T2G*
NCV20081SQ3T2G* AAP SC70
NCV20081SN2T1G* AER SOT23−5/TSOP−5
NCV20081SN3T1G* AEU SOT23−5/TSOP−5
NCS20082DMR2G
NCS20082DR2G NCS20082 SOIC−8
NCS20082DTBR2G K82 TSSOP−8
NCV20082DMR2G*
NCV20082DR2G* NCS20082 SOIC−8
NCV20082DTBR2G* K82 TSSOP−8
NCS20084DR2G
NCS20084DTBR2G 284 TSSOP−14
NCV20084DR2G*
NCV20084DTBR2G* 284 TSSOP−14
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D
*NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP
Capable.
Single
Dual
Quad
No
Yes
No
Yes
No
Yes
AAX SC70
AAX SC70
2K82 Micro8/MSOP8
2K82 Micro8/MSOP8
20084 SOIC−14
20084 SOIC−14
Contact local sales office for
more information
†
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3
NCS20081/2/4, NCV20081/2/4
ABSOLUTE MAXIMUM RATINGS (Note 1)
Rating
Supply Voltage (VDD – VSS) (Note 2) V
Input Voltage V
Differential Input Voltage V
Maximum Input Current I
Maximum Output Current I
Continuous Total Power Dissipation (Note 2) P
Maximum Junction Temperature T
Storage Temperature Range T
Mounting Temperature (Infrared or Convection – 20 sec) T
ESD Capability (Note 3) Human Body Model
Charge Device Model
Latch−Up Current (Note 4) I
Moisture Sensitivity Level (Note 5) MSL Level 1
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS for Safe Operating Area.
2. Continuous short circuit operation to ground at elevated ambient temperature can result in exceeding the maximum allowed junction
temperature of 150°C. Output currents in excess of the maximum output current rating over the long term may adversely affect reliability. Shorting output to either VDD or VSS will adversely affect reliability.
3. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per JEDEC standard Js−001−2017 (AEC−Q100−002) ESD Charged Device Model tested per JEDEC standard JS−002−2014 (AEC−Q100−011)
4. Latch−up Current tested per JEDEC standard JESD78E (AEC−Q100−004)
5. Moisture Sensitivity Level tested per IPC/JEDEC standard: J-STD-020A
Symbol Limit Unit
6 V
+ 0.5 V
DD
±V
s
±10 mA
±100 mA
200 mW 150 °C
−65 to 150 °C 260 °C
2000 2000
100 mA
ESD ESD
S
I
ID
I
O
D
J
STG
mount
HBM CDM
LU
VSS − 0.5 to V
V
V
THERMAL INFORMATION
Single Layer
Parameter Symbol Channels Package
Board (Note 6)
SC−70 491 444
Single
SOT23−5/TSOP−5 310 247
UDFN6 278 239
Junction to Ambient
Thermal Resistance
q
JA
Dual
Micro8/MSOP8 236 167
SOIC−8 190 131
TSSOP−8 253 194
SOIC−14 130 99
Quad
6. Value based on 1S standard PCB according to JEDEC51−3 with 1.0 oz copper and a 300 mm2 copper area
7. Value based on 1S2P standard PCB according to JEDEC51−7 with 1.0 oz copper and a 100 mm
TSSOP−14 178 140
2
copper area
Multi−Layer
Board (Note 7)
Unit
°C/W
OPERATING RANGES
Parameter Symbol Min Max Unit
Operating Supply Voltage V
Differential Input Voltage V
Input Common Mode Range V
Ambient Temperature T
S
ID
ICM
A
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability.
1.8 5.5 V
V
S
VSS – 0.2 VDD + 0.2 V
−40 125 °C
V
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4
NCS20081/2/4, NCV20081/2/4
ELECTRICAL CHARACTERISTICS AT VS = 1.8 V
TA = 25°C; RL ≥ 10 kW; VCM = V
Boldface limits apply over the specified temperature range, T
Parameter
INPUT CHARACTERISTICS
Input Offset Voltage
Offset Voltage Drift
Input Bias Current (Note 8) I
Input Offset Current (Note 8) I
Channel Separation XTLK f = 1 kHz 125 dB
Differential Input Resistance R
Common Mode Input Resistance R
Differential Input Capacitance C
Common Mode Input Capacitance C
Common Mode Rejection Ratio CMRR
OUTPUT CHARACTERISTICS
Open Loop Voltage Gain
Short Circuit Current I
Output Voltage High V
Output Voltage Low V
AC CHARACTERISTICS
Unity Gain Bandwidth UGBW 1.2 MHz
Slew Rate at Unity Gain SR VIN = 1.2 Vpp, Gain = 1 0.4
Phase Margin
Gain Margin A
Settling Time t
Open Loop Output Impedance Z
NOISE CHARACTERISTICS
Total Harmonic Distortion plus Noise THD+N VIN = 1.2 Vpp, f = 1 kHz, Av = 1 0.005 %
Input Referred Voltage Noise e
Input Referred Current Noise i
SUPPLY CHARACTERISTICS
Power Supply Rejection Ratio
Power Supply Quiescent Current I
8. Performance guaranteed over the indicated operating temperature range by design and/or characterization.
= mid−supply unless otherwise noted.
OUT
= −40°C to 125°C. (Note 8)
A
Symbol Conditions Min Typ Max Unit
V
OS
DVOS/DT
IB
OS
ID
IN
ID
CM
VCM = VSS – 0.2 to VDD + 0.2 48 73
VCM = VSS + 0.2 to VDD − 0.2 45
A
VOL
SC
Output to positive rail, sinking current 15
Output to negative rail, sourcing current 11
OH
OL
y
m
m
S
Voltage output swing from positive rail
Voltage output swing from negative rail
VIN = 1.2 Vpp,
Gain = 1
OL
n
n
PSRR No Load
DD
Per channel, no load 42 60
0.5 3.5 mV
4 mV
1
1 pA
1500 pA
1 pA
1100 pA
10
10
1 pF
5 pF
86 120
80
3 19
V
= VDD − V
OH
OUT
20
3 19
V
= V
OUT
− V
SS
20
OL
60 °
19 dB
Settling time to 0.1% 5 ms
Settling time to 0.01% 6
See
Figure
25
f = 1 kHz 30
f = 10 kHz 24
f = 1 kHz 300 fA/√Hz
67 90
64
mV/°C
V/ms
nV/√Hz
GW
GW
dB
dB
mA
mV
mV
W
dB
mA
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5
NCS20081/2/4, NCV20081/2/4
ELECTRICAL CHARACTERISTICS AT VS = 3.3 V
TA = 25°C; RL ≥ 10 kW; VCM = V
Boldface limits apply over the specified temperature range, T
Parameter
INPUT CHARACTERISTICS
Input Offset Voltage
Offset Voltage Drift
Input Bias Current (Note 9) I
Input Offset Current (Note 9) I
Channel Separation XTLK f = 1 kHz 125 dB
Differential Input Resistance R
Common Mode Input Resistance R
Differential Input Capacitance C
Common Mode Input Capacitance C
Common Mode Rejection Ratio CMRR
OUTPUT CHARACTERISTICS
Open Loop Voltage Gain
Short Circuit Current I
Output Voltage High V
Output Voltage Low V
AC CHARACTERISTICS
Unity Gain Bandwidth UGBW 1.2 MHz
Slew Rate at Unity Gain SR VIN = 2.5 Vpp, Gain = 1 0.4
Phase Margin
Gain Margin A
Settling Time t
Open Loop Output Impedance Z
NOISE CHARACTERISTICS
Total Harmonic Distortion plus Noise THD+N VIN = 2.5 Vpp, f = 1 kHz, Av = 1 0.005 %
Input Referred Voltage Noise e
Input Referred Current Noise i
SUPPLY CHARACTERISTICS
Power Supply Rejection Ratio
Power Supply Quiescent Current I
9. Performance guaranteed over the indicated operating temperature range by design and/or characterization.
= mid−supply unless otherwise noted.
OUT
= −40°C to 125°C. (Note 9)
A
Symbol Conditions Min Typ Max Unit
V
OS
DVOS/DT
IB
OS
ID
IN
ID
CM
VCM = VSS – 0.2 to VDD + 0.2 53 76
VCM = VSS + 0.2 to VDD − 0.2 48
A
VOL
SC
Output to positive rail, sinking current 15
Output to negative rail, sourcing current 11
OH
OL
y
m
m
S
Voltage output swing from positive rail
Voltage output swing from negative rail
VIN = 2.5 Vpp,
Gain = 1
OL
n
n
PSRR No Load
DD
Per channel, no load 42 60
0.5 3.5 mV
4 mV
1
1 pA
1500 pA
1 pA
1100 pA
10
10
1 pF
5 pF
90 120
86
3 24
V
= VDD − V
OH
OUT
25
3 24
V
= V
OUT
− V
SS
25
OL
60 °
18 dB
Settling time to 0.1% 5 ms
Settling time to 0.01% 6
See
Figure
25
f = 1 kHz 30
f = 10 kHz 24
f = 1 kHz 300 fA/√Hz
67 90
64
mV/°C
V/ms
nV/√Hz
GW
GW
dB
dB
mA
mV
mV
W
dB
mA
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6
NCS20081/2/4, NCV20081/2/4
ELECTRICAL CHARACTERISTICS AT VS = 5.5 V
TA = 25°C; RL ≥ 10 kW; VCM = V
Boldface limits apply over the specified temperature range, T
Parameter
INPUT CHARACTERISTICS
Input Offset Voltage
Offset Voltage Drift
Input Bias Current (Note 10) I
Input Offset Current (Note 10) I
Channel Separation XTLK f = 1 kHz 125 dB
Differential Input Resistance R
Common Mode Input Resistance R
Differential Input Capacitance C
Common Mode Input Capacitance C
Common Mode Rejection Ratio CMRR
OUTPUT CHARACTERISTICS
Open Loop Voltage Gain A
Short Circuit Current I
Output Voltage High V
Output Voltage Low V
AC CHARACTERISTICS
Unity Gain Bandwidth
Slew Rate at Unity Gain SR VIN = 5 Vpp, Gain = 1 0.4
Phase Margin
Gain Margin A
Settling Time t
Open Loop Output Impedance Z
NOISE CHARACTERISTICS
Total Harmonic Distortion plus Noise THD+N VIN = 5 Vpp, f = 1 kHz, Av = 1 0.005 %
Input Referred Voltage Noise e
Input Referred Current Noise i
SUPPLY CHARACTERISTICS
Power Supply Rejection Ratio
Power Supply Quiescent Current I
10.Performance guaranteed over the indicated operating temperature range by design and/or characterization. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
= mid−supply unless otherwise noted.
OUT
= −40°C to 125°C. (Note 10)
A
Symbol Conditions Min Typ Max Unit
V
OS
DVOS/DT
IB
OS
ID
IN
ID
CM
VCM = VSS – 0.2 to VDD + 0.2 55 79
VCM = VSS + 0.2 to VDD − 0.2 51
VOL
SC
Output to positive rail, sinking current 15
Output to negative rail, sourcing current 11
OH
OL
Voltage output swing from positive rail
Voltage output swing from negative rail
UGBW 1.2 MHz
y
m
m
S
VIN = 5 Vpp,
Gain = 1
OL
n
n
PSRR No Load
DD
Per channel, no load 48 70
0.5 3.5 mV
4 mV
1
1 pA
1500 pA
1 pA
1100 pA
10
10
1 pF
5 pF
90 120
86
3 24
V
= VDD − V
OH
OUT
25
3 24
V
= V
OUT
− V
SS
25
OL
60 °
17 dB
Settling time to 0.1% 5
Settling time to 0.01% 6
See
Figure
25
f = 1 kHz 30
f = 10 kHz 24
f = 1 kHz 300 fA/√Hz
67 90
64
mV/°C
GW
GW
dB
dB
mA
mV
mV
V/ms
ms
W
nV/√Hz
dB
mA
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7
NCS20081/2/4, NCV20081/2/4
TYPICAL PERFORMANCE CHARACTERISTICS
TA = 25°C, RL ≥ 10 kW, VCM = V
= mid−supply unless otherwise specified
OUT
60
50
T = 25°C
40
T = −40°C
30
20
SUPPLY CURRENT (mA)
10
0
T = 125°C
5.5
5.04.54.03.53.02.52.01.5
SUPPLY VOLTAGE (V) TEMPERATURE (°C)
Figure 2. Quiescent Current per Channel vs.
SUPPLY CURRENT (mA)
60
50
40
30
20
10
0
VS = 5.5 V
VS = 1.8 V
VS = 3.3 V
60 140
Figure 3. Quiescent Current vs. Temperature
1201008040200−20−40
Supply Voltage
800
700
600
500
400
300
T = 25°C
T = −40°C
T = 0°C
T = 125°C
T = 85°C
800
700
600
500
400
300
VS = 5.5 V
VS = 3.3 V
VS = 1.8 V
200
OFFSET VOLTAGE (mV)
100
4000
3000
2000
1000
−1000
−2000
OFFSET VOLTAGE (mV)
−3000
−4000
200
OFFSET VOLTAGE (mV)
100
0
SUPPLY VOLTAGE (V) TEMPERATURE (°C)
5.5
5.04.54.03.53.02.52.01.5
0
40 140
Figure 4. Offset Voltage vs. Supply Voltage Figure 5. Offset Voltage vs. Temperature
140
VS = 5.5 V 20 units
0
0−0.7−1.4−2.1−2.8
0.7
COMMON MODE VOLTAGE (V) FREQUENCY (Hz)
Figure 6. Offset Voltage vs. Common Mode
Voltage
2.11.4 2.8
120
Gain
100
80
60
GAIN (dB)
40
AV−10
20
R C
0
−22 dBm Input
−20
10
Phase Margin
= 10 kW
L
= 15 pF
L
Figure 7. Open−loop Gain and Phase Margin
vs. Frequency
1201008060200−20−40
180
135
90
PHASE MARGIN (°)
45
0
10M1M100k10k1k100
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NCS20081/2/4, NCV20081/2/4
TYPICAL PERFORMANCE CHARACTERISTICS
TA = 25°C, RL ≥ 10 kW, VCM = V
= mid−supply unless otherwise specified
OUT
60
VS = 5.5 V R
= 10 kW
50
40
30
20
PHASE MARGIN (°)
10
0
CAPACITIVE LOAD (pF) OUTPUT VOLTAGE (Vrms)
L
T = 25°C
5004003002001000
100
10
1
0.1
THD+N (%)
0.01
0.001
VS = 5.5 V
= 1 kHz
f
IN
A
= 1
V
10.10.01
Figure 8. Phase Margin vs. Capacitive Load Figure 9. THD + N vs. Output Voltage
600
VS = 5.5 V
500
400
300
0.1
1
A = 1V/V
= 10 K
R
L
1 V
rms
VS = 1.8 V
THD+N (%)
0.01
0.001
900
800
700
600
500
400
300
200
CURRENT NOISE (fA/√Hz)
100
0
Figure 12. Input Current Noise vs. Frequency Figure 13. PSRR vs. Frequency
200
VS = 3.3 V
VS = 5.5 V
10k1k10010
FREQUENCY (Hz) FREQUENCY (Hz)
VOLTAGE NOISE (nV/√Hz)
100
0
Figure 10. THD + N vs. Frequency Figure 11. Input Voltage Noise vs. Frequency
120
VS = 5.5 V
100k10k1k100101
FREQUENCY (Hz) FREQUENCY (Hz)
VS = 5.5 V, PSRR+
100
80
VS = 1.8 V, PSRR+
VS = 1.8 V, PSRR−
60
PSRR (dB)
40
20
0
VS = 5.5 V, PSRR−
100k10k1k100101
1M100k10k1k10010
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