ON Semiconductor NCS20061, NCV20061 User Manual

3 MHz, 125 mA Low Power Operational Amplifier
NCS20061/2/4, NCV20061/2/4
Amplifiers (Op Amps) with 3 MHz of GainBandwidth Product (GBWP) while consuming only 125 mA of Quiescent current per opamp. The NCS2006x has Input Offset Voltage of 4 mV and operates from 1.8 V to 5.5 V supply voltage over a wide temperature range (40°C to 125°C). The RailtoRail In/Out operation allows the use of the entire supply voltage range while taking advantage of the 3 MHz GBWP. Thus, this family offers superior performance over many industry standard parts. These devices are AECQ100 qualified which is denoted by the NCV prefix.
NCS2006x’s low current consumption and low supply voltage performance in space saving packages, makes them ideal for sensor signal conditioning and low voltage current sensing applications in Automotive, Consumer and Industrial markets.
Features
GainBandwidth Product: 3 MHz
Low Supply Current/ Channel: 125 mA typ (V
Low Input Offset Voltage: 4 mV max
Wide Supply Range: 1.8 V to 5.5 V
Wide Temperature Range: 40°C to +125°C
RailtoRail Input and Output
Unity Gain Stable
Available in Single, Dual and Quad Packages
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ100 Qualified and PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
= 1.8 V)
S
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SC70−5
CASE 419A
Micro8]/MSOP8
CASE 846A
TSSOP−8
CASE 948S
14
1
SOIC14
CASE 751A
5
1
TSOP5/SOT23−5
CASE 483
8
1
SOIC−8
CASE 751
14
1
TSSOP14
CASE 948G
6
1
UDFN6
CASE 517AP
Applications
Automotive
Battery Powered/ Portable
Sensor Signal Conditioning
Low Voltage Current Sensing
Filter Circuits
Unity Gain Buffer
© Semiconductor Components Industries, LLC, 2017
January, 2021 − Rev. 15
DEVICE MARKING INFORMATION
See general marking information in the device marking section on page 2 of this data sheet.
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of this data sheet.
1 Publication Order Number:
NCS2006/D
NCS20061/2/4, NCV20061/2/4
MARKING DIAGRAMS
Single Channel Configuration
NCS20061, NCV20061
XXMG
G
SC70−5
CASE 419A
8
XXXX AYW G
G
1
Micro8]/MSOP8
CASE 846A
14
XXXX XXXX
ALYWG
G
1
TSSOP14
CASE 948G
5
XXXAYWG
G
1
TSOP5/SOT23−5
CASE 483
Dual Channel Configuration
NCS20062, NCV20062
8
XXXXXX
ALYW
G
1
SOIC−8
CASE 751
Quad Channel Configuration
NCS20064, NCV20064
14
XXXXXXXXG
AWLYWW
1
SOIC14
CASE 751A
1
XX MG
G
UDFN6
CASE 517AP
XXX
YWW
AG
TSSOP−8
CASE 948S
XXXXX = Specific Device Code A = Assembly Location WL, L = Wafer Lot Y = Year WW, W = Work Week G or G = PbFree Package
(Note: Microdot may be in either location)
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2
NCS20061/2/4, NCV20061/2/4
Single Channel Configuration
NCS20061, NCV20061
1
OUT
2
VSS
+
3
IN+
SC705, SOT235 (TSOP5)
SQ2, SN2 Pinout
OUT 1
IN 1
IN+ 1
1
2
3
VSS
4
Micro8/MSOP8, SOIC8, TSSOP−8
5
VDD
4
IN
Dual Channel Configuration
NCS20062, NCV20062
+
+
1
IN+
+
VSS
2
3
IN
SC705, SOT235 (TSOP5)
SQ3, SN3 Pinout
8
VDD
7
OUT 2
6
IN 2
IN+ 2
5
Figure 1. Pin Connections
5
VDD
4
OUT
Quadruple Channel Configuration
NCS20064, NCV20064
IN 1
IN+ 1
VDD
IN+ 2
IN 2
1
2
+
3
4
5
+
6
7
TSSOP14, SOIC14
OUT 1
OUT 2
VSS
NC
IN
1
2
3
+
UDFN6 1.6 x 1.6
14
OUT 4
IN 4
13
+
IN+ 4
12
VSS
11
IN+ 3
10
+
IN 3
9
OUT 3
8
6
OUT
5
VDD
4
IN+
ORDERING INFORMATION
Device Configuration Automotive Marking Package Shipping
NCS20061SQ3T2G
NCS20061SN2T1G AEP SOT235/TSOP5
NCS20061SN3T1G AEQ SOT235/TSOP5
NCS20061MUTAG AG UDFN6
NCV20061SQ3T2G*
NCV20061SN2T1G* AEP SOT235/TSOP5
NCV20061SN3T1G* AEQ SOT235/TSOP5
NCS20062DMR2G
NCS20062DR2G NCS20062 SOIC8
NCS20062DTBR2G K62 TSSOP8
NCV20062DMR2G*
NCV20062DR2G* NCS20062 SOIC8
NCV20062DTBR2G* K62 TSSOP8
NCS20064DR2G
NCS20064DTBR2G 264 TSSOP14
NCV20064DR2G*
NCV20064DTBR2G* 264 TSSOP14
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D
*NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ100 Qualified and PPAP
Capable.
Single
Dual
Quad
No
Yes
No
Yes
No
Yes
AAM SC70
AAM SC70
2K62 Micro8/MSOP8
Contact local sales office for
more information
2K62 Micro8/MSOP8
20064 SOIC14
20064 SOIC14
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3
NCS20061/2/4, NCV20061/2/4
ABSOLUTE MAXIMUM RATINGS (Note 1)
Rating
Supply Voltage (VDD – VSS) (Note 2) V
Input Voltage V
Differential Input Voltage V
Maximum Input Current I
Maximum Output Current I
Continuous Total Power Dissipation (Note 2) P
Maximum Junction Temperature T
Storage Temperature Range T
Mounting Temperature (Infrared or Convection – 20 sec) T
ESD Capability (Note 3) Human Body Model
Charge Device Model
LatchUp Current (Note 4) I
Moisture Sensitivity Level (Note 5) MSL Level 1
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS for Safe Operating Area.
2. Continuous short circuit operation to ground at elevated ambient temperature can result in exceeding the maximum allowed junction
temperature of 150°C. Output currents in excess of the maximum output current rating over the long term may adversely affect reliability. Shorting output to either VDD or VSS will adversely affect reliability.
3. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per JEDEC standard Js0012017 (AECQ100002) ESD Charged Device Model tested per JEDEC standard JS0022014 (AECQ100011)
4. Latchup Current tested per JEDEC standard JESD78E (AECQ100004)
5. Moisture Sensitivity Level tested per IPC/JEDEC standard: J-STD-020A
Symbol Limit Unit
6 V
+ 0.5 V
DD
±V
s
±10 mA
±100 mA
200 mW 150 °C
65 to 150 °C 260 °C
2000 2000
100 mA
V
V
ESD ESD
S
I
ID
I
O
D
J
STG
mount
HBM CDM
LU
VSS 0.5 to V
THERMAL INFORMATION
Single Layer
Parameter Symbol Channels Package
Board (Note 6)
SC70 490 444
Single
SOT235/TSOP−5 310 247
UDFN6 276 239
Junction to Ambient
Thermal Resistance
q
JA
Dual
Micro8/MSOP8 236 167
SOIC−8 190 131
TSSOP−8 253 194
SOIC14 130 99
Quad
6. Value based on 1S standard PCB according to JEDEC51−3 with 1.0 oz copper and a 300 mm2 copper area
7. Value based on 1S2P standard PCB according to JEDEC51−7 with 1.0 oz copper and a 100 mm
TSSOP14 178 140
2
copper area
MultiLayer
Board (Note 7)
Unit
°C/W
OPERATING RANGES
Parameter Symbol Min Max Unit
Operating Supply Voltage V
Differential Input Voltage V
Input Common Mode Range V
Ambient Temperature T
S
ID
ICM
A
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability.
1.8 5.5 V
V
S
VSS – 0.2 VDD + 0.2 V
40 125 °C
V
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4
NCS20061/2/4, NCV20061/2/4
ELECTRICAL CHARACTERISTICS AT VS = 1.8 V
TA = 25°C; RL 10 kW; VCM = V
Boldface limits apply over the specified temperature range, T
Parameter
INPUT CHARACTERISTICS
Input Offset Voltage
Offset Voltage Drift
Input Bias Current (Note 8) I
Input Offset Current (Note 8) I
Channel Separation XTLK f = 1 kHz 125 dB
Differential Input Resistance R
Common Mode Input Resistance R
Differential Input Capacitance C
Common Mode Input Capacitance C
Common Mode Rejection Ratio CMRR
OUTPUT CHARACTERISTICS
Open Loop Voltage Gain
Short Circuit Current I
Output Voltage High V
Output Voltage Low V
AC CHARACTERISTICS
Unity Gain Bandwidth UGBW 3 MHz
Slew Rate at Unity Gain SR VIN = 1.2 Vpp, Gain = 1 1.2
Phase Margin
Gain Margin A
Settling Time t
Open Loop Output Impedance Z
NOISE CHARACTERISTICS
Total Harmonic Distortion plus Noise THD+N VIN = 1.2 Vpp, f = 1 kHz, Av = 1 0.005 %
Input Referred Voltage Noise e
Input Referred Current Noise i
SUPPLY CHARACTERISTICS
Power Supply Rejection Ratio
Power Supply Quiescent Current I
8. Performance guaranteed over the indicated operating temperature range by design and/or characterization.
= midsupply unless otherwise noted.
OUT
= 40°C to 125°C. (Note 8)
A
Symbol Conditions Min Typ Max Unit
V
OS
DVOS/DT
IB
OS
ID
IN
ID
CM
VCM = VSS – 0.2 to VDD + 0.2 48 73
VCM = VSS + 0.2 to VDD 0.2 45
A
VOL
SC
Output to positive rail, sinking current 19
Output to negative rail, sourcing current 15
OH
OL
y
m
m
S
Voltage output swing from positive rail
Voltage output swing from negative rail
VIN = 1.2 Vpp,
Gain = 1
OL
n
n
PSRR No Load
DD
Per channel, no load 125 170
0.5 3.5 mV
4 mV
1
1 pA
1500 pA
1 pA
1100 pA
10
10
1 pF
5 pF
86 120
80
3 19
V
= VDD V
OH
OUT
20
3 19
V
= V
OUT
V
SS
20
OL
60 °
10 dB
Settling time to 0.1% 2.3 ms
Settling time to 0.01% 6
See
Figure
25
f = 1 kHz 20
f = 10 kHz 15
f = 1 kHz 300 fA/Hz
67 90
64
mV/°C
V/ms
nV/Hz
GW
GW
dB
dB
mA
mV
mV
W
dB
mA
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5
NCS20061/2/4, NCV20061/2/4
ELECTRICAL CHARACTERISTICS AT VS = 3.3 V
TA = 25°C; RL 10 kW; VCM = V
Boldface limits apply over the specified temperature range, T
Parameter
INPUT CHARACTERISTICS
Input Offset Voltage
Offset Voltage Drift
Input Bias Current (Note 9) I
Input Offset Current (Note 9) I
Channel Separation XTLK f = 1 kHz 125 dB
Differential Input Resistance R
Common Mode Input Resistance R
Differential Input Capacitance C
Common Mode Input Capacitance C
Common Mode Rejection Ratio CMRR
OUTPUT CHARACTERISTICS
Open Loop Voltage Gain
Short Circuit Current I
Output Voltage High V
Output Voltage Low V
AC CHARACTERISTICS
Unity Gain Bandwidth UGBW 3 MHz
Slew Rate at Unity Gain SR VIN = 2.5 Vpp, Gain = 1 1.2
Phase Margin
Gain Margin A
Settling Time t
Open Loop Output Impedance Z
NOISE CHARACTERISTICS
Total Harmonic Distortion plus Noise THD+N VIN = 2.5 Vpp, f = 1 kHz, Av = 1 0.005 %
Input Referred Voltage Noise e
Input Referred Current Noise i
SUPPLY CHARACTERISTICS
Power Supply Rejection Ratio
Power Supply Quiescent Current I
9. Performance guaranteed over the indicated operating temperature range by design and/or characterization.
= midsupply unless otherwise noted.
OUT
= 40°C to 125°C. (Note 9)
A
Symbol Conditions Min Typ Max Unit
V
OS
DVOS/DT
IB
OS
ID
IN
ID
CM
VCM = VSS – 0.2 to VDD + 0.2 53 76
VCM = VSS + 0.2 to VDD 0.2 48
A
VOL
SC
Output to positive rail, sinking current 19
Output to negative rail, sourcing current 15
OH
OL
y
m
m
S
Voltage output swing from positive rail
Voltage output swing from negative rail
VIN = 2.5 Vpp,
Gain = 1
OL
n
n
PSRR No Load
DD
Per channel, no load 135 180
0.5 3.5 mV
4 mV
1
1 pA
1500 pA
1 pA
1100 pA
10
10
1 pF
5 pF
90 120
86
3 24
V
= VDD V
OH
OUT
25
3 24
V
= V
OUT
V
SS
25
OL
60 °
10 dB
Settling time to 0.1% 2.3 ms
Settling time to 0.01% 3.1
See
Figure
25
f = 1 kHz 20
f = 10 kHz 15
f = 1 kHz 300 fA/Hz
67 90
64
mV/°C
V/ms
nV/Hz
GW
GW
dB
dB
mA
mV
mV
W
dB
mA
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6
NCS20061/2/4, NCV20061/2/4
ELECTRICAL CHARACTERISTICS AT VS = 5.5 V
TA = 25°C; RL 10 kW; VCM = V
Boldface limits apply over the specified temperature range, T
Parameter
INPUT CHARACTERISTICS
Input Offset Voltage
Offset Voltage Drift
Input Bias Current (Note 10) I
Input Offset Current (Note 10) I
Channel Separation XTLK f = 1 kHz 125 dB
Differential Input Resistance R
Common Mode Input Resistance R
Differential Input Capacitance C
Common Mode Input Capacitance C
Common Mode Rejection Ratio CMRR
OUTPUT CHARACTERISTICS
Open Loop Voltage Gain A
Short Circuit Current I
Output Voltage High V
Output Voltage Low V
AC CHARACTERISTICS
Unity Gain Bandwidth
Slew Rate at Unity Gain SR VIN = 5 Vpp, Gain = 1 1.2
Phase Margin
Gain Margin A
Settling Time t
Open Loop Output Impedance Z
NOISE CHARACTERISTICS
Total Harmonic Distortion plus Noise THD+N VIN = 5 Vpp, f = 1 kHz, Av = 1 0.005 %
Input Referred Voltage Noise e
Input Referred Current Noise i
SUPPLY CHARACTERISTICS
Power Supply Rejection Ratio
Power Supply Quiescent Current I
10.Performance guaranteed over the indicated operating temperature range by design and/or characterization. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
= midsupply unless otherwise noted.
OUT
= 40°C to 125°C. (Note 10)
A
Symbol Conditions Min Typ Max Unit
V
OS
DVOS/DT
IB
OS
ID
IN
ID
CM
VCM = VSS – 0.2 to VDD + 0.2 55 79
VCM = VSS + 0.2 to VDD 0.2 51
VOL
SC
Output to positive rail, sinking current 19
Output to negative rail, sourcing current 15
OH
OL
Voltage output swing from positive rail
Voltage output swing from negative rail
UGBW 3 MHz
y
m
m
S
VIN = 5 Vpp,
Gain = 1
OL
n
n
PSRR No Load
DD
Per channel, no load 140 200
0.5 3.5 mV
4 mV
1
1 pA
1500 pA
1 pA
1100 pA
10
10
1 pF
5 pF
90 120
86
3 24
V
= VDD V
OH
OUT
25
3 24
V
= V
OUT
V
SS
25
OL
60 °
10 dB
Settling time to 0.1% 2.3
Settling time to 0.01% 3.1
See
Figure
25
f = 1 kHz 20
f = 10 kHz 15
f = 1 kHz 300 fA/Hz
67 90
64
mV/°C
GW
GW
dB
dB
mA
mV
mV
V/ms
ms
W
nV/Hz
dB
mA
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NCS20061/2/4, NCV20061/2/4
TYPICAL PERFORMANCE CHARACTERISTICS
TA = 25°C, RL 10 kW, VCM = V
= midsupply unless otherwise specified
OUT
SUPPLY CURRENT (mA)
1000
OFFSET VOLTAGE (mV)
180
160
140
T = 25°C
120
T = 125°C
100
T = 40°C
80
SUPPLY VOLTAGE (V) TEMPERATURE (°C)
Figure 2. Quiescent Current per Channel vs.
5.5
5.04.54.03.53.02.52.01.5
180
160
VS = 5.5 V
140
VS = 3.3 V
120
SUPPLY CURRENT (mA)
100
VS = 1.8 V
80
60 140
Figure 3. Quiescent Current vs. Temperature
Supply Voltage
1000
OFFSET VOLTAGE (mV)
900
800
700
600
500
400
300
200
100
VS = 5.5 V
VS = 3.3 V
VS = 1.8 V
0
40 140
900
800
700
600
500
400
300
200
100
T = 40°C
T = 0°C
T = 25°C
T = 85°C
T = 125°C
0
SUPPLY VOLTAGE (V) TEMPERATURE (°C)
5.04.54.03.53.02.52.01.5
5.5
Figure 4. Offset Voltage vs. Supply Voltage Figure 5. Offset Voltage vs. Temperature
1201008040200−20−40
1201008060200−20−40
2000
1600
1200
800
400
400
800
OFFSET VOLTAGE (mV)
1200
1600
2000
VS = 5.5 V 12 units
0
COMMON MODE VOLTAGE (V) FREQUENCY (Hz)
Figure 6. Offset Voltage vs. Common Mode
Voltage
140
120
100
80
60
GAIN (dB)
40
AV10 V
20
R C
0
22 dBm Input
2.11.40.70−0.7−1.4−2.1−2.8
20
2.8
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8
Gain
Phase Margin
= 5.5 V
S
= 10 kW
L
= 15 pF
L
Figure 7. Openloop Gain and Phase Margin
vs. Frequency
180
135
90
PHASE MARGIN (°)
45
0
10M1M100k10k1k10010
NCS20061/2/4, NCV20061/2/4
TYPICAL PERFORMANCE CHARACTERISTICS
TA = 25°C, RL 10 kW, VCM = V
= midsupply unless otherwise specified
OUT
70
VS = 5.5 V R
60
= 10 kW
L
T = 25°C
50
40
30
20
PHASE MARGIN (°)
10
0
5004003002001000
100
10
1
0.1
THD+N (%)
0.01
0.001
VS = 5.5 V
= 1 kHz
f
IN
A
= 1
V
10.10.01
CAPACITIVE LOAD (pF) OUTPUT VOLTAGE (Vrms)
Figure 8. Phase Margin vs. Capacitive Load Figure 9. THD + N vs. Output Voltage
1
0.1
AV = 1 V/V R
= 10 kW
L
T
= 25°C
A
1 V
RMS
VS = 1.8 V
600
VS = 5.5 V
500
400
300
THD+N (%)
0.01 VS = 3.3 V
VOLTAGE NOISE (nV/√Hz)
200
100
VS = 5.5 V
0.001
0
10k1k10010
FREQUENCY (Hz) FREQUENCY (Hz)
Figure 10. THD + N vs. Frequency Figure 11. Input Voltage Noise vs. Frequency
100
90
80
VS = 1.8 V, PSRR+
70
VS = 1.8 V, PSRR
60
50
40
PSRR (dB)
30
20
10
0
VS = 5.5 V, PSRR+
VS = 5.5 V, PSRR
CURRENT NOISE (fA/√Hz)
900
800
700
600
500
400
300
200
100
VS = 5.5 V
0
100k10k1k100101
FREQUENCY (Hz) FREQUENCY (Hz)
Figure 12. Input Current Noise vs. Frequency Figure 13. PSRR vs. Frequency
100k10k1k100101
1M100k10k1k10010
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