ON Semiconductor MUN5111T1 Technical data

MUN5111T1 Series

Preferred Devices

Bias Resistor Transistor

PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base−emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space. The device is housed in
the SC−70/SOT−323 package which is designed for low power
surface mount applications.

Features

• Pb−Free Packages are Available

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• The SC−70/SOT−323 package can be soldered using wave or reflow.

The modified gull−winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.

• Available in 8 mm embossed tape and reel − Use the Device Number

to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the
Device Number to order the 13 inch/10,000 unit reel.

MAXIMUM RATINGS (T

Rating Symbol Value Unit

Collector-Base Voltage V
Collector-Emitter Voltage V
Collector Current I

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation

T

= 25°C

A

Derate above 25°C

Thermal Resistance, Junction-to-Ambient R

Thermal Resistance, Junction-to-Lead R

Junction and Storage Temperature Range TJ, T

1. FR−4 @ Minimum Pad

2. FR−4 @ 1.0 x 1.0 inch Pad

= 25°C unless otherwise noted)

A

CBO
CEO

C

P

D



JA



JL

stg

50 Vdc
50 Vdc

100 mAdc

202 (Note 1)
310 (Note 2)

1.6 (Note 1)

2.5 (Note 2)
618 (Note 1)

403 (Note 2)
280 (Note 1)

332 (Note 2)

−55 to +150 °C

mW

°C/W

°C/W

°C/W

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PNP SILICON

BIAS RESISTOR

TRANSISTORS

PIN 3

PIN 1

BASE

(INPUT)

R

1

R

2

1

2

SC−70/SOT−323

CASE 419

STYLE 3

MARKING DIAGRAM

6x M

6x = Specific Device Code

M = Date Code

(See Order Info Table)

ORDERING INFORMATION

See specific ordering and shipping information in the package
dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use
and best overall value.

COLLECTOR
(OUTPUT)

PIN 2
EMITTER
(GROUND)

3

 Semiconductor Components Industries, LLC, 2004

October, 2004 − Rev. 7

1 Publication Order Number:

MUN5111T1/D

MUN5111T1 Series

ORDERING INFORMATION AND RESISTOR VALUES

Device Package Marking R1 (K) R2 (K) Shipping

MUN5111T1 SC−70/SOT−323 6A 10 10 3000/Tape & Reel
MUN5111T1G SC−70/SOT−323

MUN5112T1 SC−70/SOT−323 6B 22 22 3000/Tape & Reel
MUN5112T1G SC−70/SOT−323

MUN5113T1
MUN5113T3

MUN5113T1G SC−70/SOT−323

MUN5114T1 SC−70/SOT−323 6D 10 47 3000/Tape & Reel
MUN5114T1G SC−70/SOT−323

MUN5115T1 (Note 3) SC−70/SOT−323 6E 10 ∞ 3000/Tape & Reel
MUN5115T1G (Note 3) SC−70/SOT−323

MUN5116T1 (Note 3) SC−70/SOT−323 6F 4.7 ∞ 3000/Tape & Reel
MUN5130T1 (Note 3) SC−70/SOT−323 6G 1.0 1.0 3000/Tape & Reel
MUN5130T1G (Note 3) SC−70/SOT−323

MUN5131T1 (Note 3) SC−70/SOT−323 6H 2.2 2.2 3000/Tape & Reel
MUN5131T1G (Note 3) SC−70/SOT−323

MUN5132T1 (Note 3) SC−70/SOT−323 6J 4.7 4.7 3000/Tape & Reel
MUN5132T1G (Note 3) SC−70/SOT−323

MUN5133T1 (Note 3) SC−70/SOT−323 6K 4.7 47 3000/Tape & Reel
MUN5133T1G (Note 3) SC−70/SOT−323

MUN5134T1 (Note 3) SC−70/SOT−323 6L 22 47 3000/Tape & Reel
MUN5135T1 (Note 3) SC−70/SOT−323 6M 2.2 47 3000/Tape & Reel
MUN5136T1 SC−70/SOT−323 6N 100 100 3000/Tape & Reel
MUN5137T1 SC−70/SOT−323 6P 47 22 3000/Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

3. New devices. Updated curves to follow in subsequent data sheets.

(Pb−Free)

(Pb−Free)

SC−70/SOT−323 6C 47 47 3000/Tape & Reel

(Pb−Free)

(Pb−Free)

(Pb−Free)

(Pb−Free)

(Pb−Free)

(Pb−Free)

(Pb−Free)

6A 10 10 3000/Tape & Reel

6B 22 22 3000/Tape & Reel

10,000/Tape & Reel

6C 47 47 3000/Tape & Reel

6D 10 47 3000/Tape & Reel

6E 10 ∞ 3000/Tape & Reel

6G 1.0 1.0 3000/Tape & Reel

6H 2.2 2.2 3000/Tape & Reel

6J 4.7 4.7 3000/Tape & Reel

6K 4.7 47 3000/Tape & Reel

†

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2

MUN5111T1 Series

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic

OFF CHARACTERISTICS

Collector−Base Cutoff Current (VCB = 50 V, IE = 0) I
Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) I
Emitter−Base Cutoff Current MUN5111T1

(V

= 6.0 V, IC = 0) MUN5112T1

EB

MUN5113T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
MUN5136T1
MUN5137T1

Collector−Base Breakdown Voltage (IC = 10 A, IE = 0) V
Collector−Emitter Breakdown Voltage (Note 4)

= 2.0 mA, IB = 0)

(I

C

ON CHARACTERISTICS (Note 4)

DC Current Gain MUN5111T1

(V

= 10 V, IC = 5.0 mA) MUN5112T1

CE

Collector−Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA)

(I

= 10 mA, IB = 5 mA) MUN5130T1/MUN5131T1

C

= 10 mA, IB = 1 mA) MUN5115T1/MUN5116T1/

(I

C

MUN5132T1/MUN5133T1/MUN5134T1

Output Voltage (on)

(V

= 5.0 V, VB = 2.5 V, RL = 1.0 k) MUN5111T1

CC

(V

= 5.0 V, VB = 3.5 V, RL = 1.0 k) MUN5113T1

CC

(V

= 5.0 V, VB = 5.5 V, RL = 1.0 k) MUN5136T1

CC

= 5.0 V, VB = 4.0 V, RL = 1.0 k) MUN5137T1

(V

CC

4. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%

MUN5113T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
MUN5136T1
MUN5137T1

MUN5112T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1

Symbol Min Typ Max Unit

CBO
CEO

I

EBO

(BR)CBO

V

(BR)CEO

h

V

CE(sat)

V

FE

OL

− − 100 nAdc

− − 500 nAdc

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

0.5

0.2

0.1

0.2

0.9

1.9

4.3

2.3

1.5

0.18

0.13

0.2

0.05

0.13

mAdc

50 − − Vdc
50 − − Vdc

35
60
80

80
160
160

3.0

8.0
15
80
80
80
80
80

60
100
140
140
250
250

5.0
15
27

140
130
140
150
140

−

−

−

−

−

−

−

−

−

−

−

−

−

−

− − 0.25 Vdc

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

0.2

0.2

0.2

0.2

0.2

0.2

0.2

0.2

0.2

0.2

0.2

0.2

0.2

0.2

Vdc

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3

MUN5111T1 Series

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted) (Continued)

A

Characteristic

Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k)

(V

= 5.0 V, VB = 0.050 V, RL = 1.0 k) MUN5130T1

CC

= 5.0 V, VB = 0.25 V, RL = 1.0 k) MUN5115T1

(V

CC

MUN5116T1
MUN5131T1
MUN5132T1

Input Resistor MUN5111T1

MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
MUN5136T1
MUN5137T1

Resistor Ratio MUN5111T1/MUN5112T1/MUN5113T1/

MUN5136T1
MUN5114T1
MUN5115T1/MUN5116T1
MUN5130T1/MUN5131T1/MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
MUN5137T1

Symbol Min Typ Max Unit

V

OH

R1 7.0

R1/R

2

4.9 − − Vdc

15.4

32.9

7.0

7.0

3.3

0.7

1.5

3.3

3.3

15.4

1.54
70

32.9

0.8

0.17

−

0.8

0.055

0.38

0.038

1.7

10
22
47
10
10

4.7

1.0

2.2

4.7

4.7
22

2.2

100

47

1.0

0.21

−

1.0

0.1

0.47

0.047

2.1

13

28.6

61.1
13
13

6.1

1.3

2.9

6.1

6.1

28.6

2.86

130

61.1

1.2

0.25

−

1.2

0.185

0.56

0.056

2.6

k

250

200

150

100

R

= 833°C/W



50

, POWER DISSIPATION (MILLIWATTS)

D

P

0

−50 0 50 100 150

JA

T

, AMBIENT TEMPERATURE (°C)

A

Figure 1. Derating Curve

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