ON Semiconductor MPS650 Technical data
查询MPS650ZL1供应商
MPS650, MPS651, NPN
MPS750, MPS751, PNP
MPS651 and MPS751 are Preferred Devices
Amplifier Transistors
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
MPS650
Rating Symbol
Collector −Emitter Voltage V
Collector −Base Voltage V
Emitter −Base Voltage V
Collector Current − Continuous I
Total Power Dissipation @
TA = 25°C
Derate above 25°C
Total Power Dissipation @
TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
TJ, T
MPS750
CE
CB
EB
C
P
D
P
D
stg
MPS651
MPS751
40 60 Vdc
60 80 Vdc
5.0 Vdc
2.0 Adc
625
5.0
1.5
12
−55 to +150 °C
mW/°C
mW/°C
Unit
mW
W
BASE
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COLLECTOR
3
2
1
EMITTER
NPN PNP
2
BASE
COLLECTOR
3
1
EMITTER
MARKING
DIAGRAM
MPS
xxx
AYWW
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Ambient
Thermal Resistance,
Junction−to−Case
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
R
q
JA
R
q
JC
200 °C/W
83.3 °C/W
TO−92
CASE 29−11
xxx = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2005
May, 2005 − Rev. 2
1 Publication Order Number:
MPS650/D
MPS650, MPS651, NPN MPS750, MPS751, PNP
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
C
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 1)
(IC = 10 mAdc, IB = 0) MPS650, MPS750
MPS651, MPS751
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0 ) MPS650, MPS750
MPS651, MPS751
Emitter −Base Breakdown Voltage
(IC = 0, IE = 10 mAdc)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0) MPS650, MPS750
(VCB = 80 Vdc, IE = 0) MPS651, MPS751
Emitter Cutoff Current
(VEB = 4.0 V, IC = 0)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 50 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
(IC = 2.0 A, VCE = 2.0 V)
Collector −Emitter Saturation Voltage
(IC = 2.0 A, IB = 200 mA)
(IC = 1.0 A, IB = 100 mA)
Base−Emitter On Voltage (IC = 1.0 A, VCE = 2.0 V) V
Base −Emitter Saturation Voltage (IC = 1.0 A, IB = 100 mA) V
SMALL− SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 2)
(IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
V
CE(sat)
BE(on)
BE(sat)
f
FE
40
60
−
−
Vdc
Vdc
60
80
−
−
5.0 − Vdc
mAdc
−
−
− 0.1
0.1
0.1
mAdc
−
75
75
75
40
−
−
−
−
Vdc
−
−
0.5
0.3
− 1.0 Vdc
− 1.2 Vdc
T
75 − MHz
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2
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