
MPS6515/MMBT6515
MPS6515/MMBT6515
NPN General Purpose Amplifier
• This device is designed as a general purpose
amplifier and switch.
• The useful dynamic range extends to 100mA as a
switch and to 100MHz as an amplifier.
TO-92
Absolute Maximum Ratings* T
1
1. Emitter 2. Base 3. Collector
=25°C unless otherwise noted
C
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
, T
T
J
stg
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
Collector-Emitter Voltage 25 V
Collector-Base Voltage 40 V
Emitter-Base Voltage 4.0 V
Collector current - Continuous 200 mA
Junction and Storage Temperature -55 ~ +150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CBO
Collector-Emitter Breakdown Voltage IC = 0.5mA, IB = 0 25 V
Collector-Base Breakdown Voltage IC =10µA, IE = 0 40 V
Emitter-Base Breakdown Voltage IC = 10µA, IC = 0 4.0 V
Collector Cutoff Current VCE = 30V, IE = 0 50 nA
Collector Cutoff Current VCB = 30V, IE = 0, T = 60°C1.0µA
On Characteristics *
h
FE
V
CE(sat)
DC Current Gain IC = 2.0mA, VCE = 10V
= 100mA, VCE = 10V
I
C
Collector-Emitter Saturation Voltage IC = 50mA, IB = 5.0mA 0.5 V
Small Signal Characteristics
C
obo
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Output Capacitance VCB = 10V, IE = 0, f = 100kHz 3.5 pF
3
2
SOT-23
1
Mark: 3J
1. Base 2. Emitter 3. Collector
250
500
150
Thermal Characteristics
Symbol Parameter
P
D
R
θJC
R
θJA
* Device mounted on FR-4 PCB 1.6” × 0.06"
©2003 Fairchild Semiconductor Corporation Rev. A. February 2003
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case 83.3 °C/W
Thermal Resistance, Junction to Ambient 200 357 °C/W
TA=25°C unless otherwise noted
Max.
MPS6515 *MMBT6515
625
5.0
350
2.8
Units
mW
mW/°C

Package Dimensions
MPS6515/MMBT6515
TO-92
Dimensions in Millimeters
Rev. A. February 2003©2003 Fairchild Semiconductor Corporation

MPS6515/MMBT6515
Package Dimensions
(Continued)
SOT-23
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation Rev. A. February 2003
©2003 Fairchild Semiconductor Corporation

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2003 Fairchild Semiconductor Corporation Rev. I2
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.