ON Semiconductor MMBV2101LT1 Technical data

MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209

Preferred Device

Silicon Tuning Diodes

These devices are designed in popular plastic packages for the high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications. They provide solid−state reliability in replacement of mechanical tuning methods. Also available in a Surface Mount Package up to 33 pF.

Features

• High Q

• Controlled and Uniform Tuning Ratio

• Standard Capacitance Tolerance − 10%

• Complete Typical Design Curves

• Pb−Free Packages are Available

MAXIMUM RATINGS

Rating Symbol Value Unit

Reverse Voltage V Forward Current I Forward Power Dissipation

@ TA = 25°C MMBV21xx Derate above 25°C

@ TA = 25°C MV21xx Derate above 25°C LV2209

Junction Temperature T Storage Temperature Range T

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

ELECTRICAL CHARACTERISTICS (T

Characteristic Symbol Min Typ Max Unit

Reverse Breakdown Voltage (IR = 10 mAdc)

MMBV21xx, MV21xx

LV2209

Reverse Voltage Leakage Current (VR = 25 Vdc, TA = 25°C)

Diode Capacitance Temperature Coefficient (VR = 4.0 Vdc, f = 1.0 MHz)

stg

= 25°C unless otherwise noted)

(BR)R

30 Vdc

200 mAdc

225

1.8

280

2.8

+150 °C

−55 to +150 °C

3025−−−

− − 0.1

− 280 − ppm/°C

mW/°C

Vdc

− mAdc

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6.8−100 pF, 30 VOLTS VOLTAGE VARIABLE

CAPACITANCE DIODES

Cathode

SOT−23 (TO−236)

xxx = Specific Device Code M = Date Code* G = Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

TO−92 (TO−226AC)

yyyyyy = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package

(Note: Microdot may be in either location)

SOT−23

TO−92

CASE 318−08

STYLE 8

CASE 182

STYLE 1

Anode

MARKING

DIAGRAMS

xxx M G

yyyy

AYWW G

January, 2006 − Rev. 4

See detailed ordering and shipping information in the package

ORDERING INFORMATION

dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use and best overall value.

1 Publication Order Number:

MMBV2101LT1/D

MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209

CT, Diode Capacitance

VR = 4.0 Vdc, f = 1.0 MHz

Device Marking Package Shipping

MMBV2101LT1 M4G SOT−23 3,000 / Tape & Reel 6.1 6.8 7.5 450 2.5 2.7 3.2 MMBV2101LT1G M4G SOT−23

(Pb−Free) MMBV2101L M4G SOT−23 Bulk (Note 1) 6.1 6.8 7.5 450 2.5 2.7 3.2 MV2101 MV2101 TO−92 1,000 per Box 6.1 6.8 7.5 450 2.5 2.7 3.2 MV2101G MV2101 TO−92

(Pb−Free) MMBV2103LT1 4H SOT−23 3,000 / Tape & Reel 9.0 10 11 400 2.5 2.9 3.2 MMBV2105LT1 4U SOT−23 3,000 / Tape & Reel 13.5 15 16.5 400 2.5 2.9 3.2 MMBV2105LT1G 4U SOT−23

(Pb−Free) MMBV2105L 4U SOT−23 Bulk (Note 1) 13.5 15 16.5 400 2.5 2.9 3.2 MV2105 MV2105 TO−92 1,000 per Box 13.5 15 16.5 400 2.5 2.9 3.2 MV2105G MV2105 TO−92

(Pb−Free) MMBV2107LT1 4W SOT−23 3,000 / Tape & Reel 19.8 22 24.2 350 2.5 2.9 3.2 MMBV2107LT1G 4W SOT−23

(Pb−Free) MMBV2107L 4W SOT−23 Bulk (Note 1) 19.8 22 24.2 350 2.5 2.9 3.2 MMBV2108LT1 4X SOT−23 3,000 / Tape & Reel 24.3 27 29.7 300 2.5 3.0 3.2 MMBV2108LT1G 4X SOT−23

(Pb−Free) LV2209 LV2209 TO−92 1,000 per Box 29.7 33 36.3 200 2.5 3.0 3.2 MMBV2109LT1 4J SOT−23 3,000 / Tape & Reel 29.7 33 36.3 200 2.5 3.0 3.2 MMBV2109LT1G 4J SOT−23

(Pb−Free) MMBV2109L 4J SOT−23 Bulk (Note 1) 29.7 33 36.3 200 2.5 3.0 3.2 MV2109 MV2109 TO−92 1,000 per Box 29.7 33 36.3 200 2.5 3.0 3.2 MV2109G MV2109 TO−92

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specification Brochure, BRD8011/D.

1. MMBV2101LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1, are also available in bulk. Use the device title and drop the “T1” suffix when ordering any of these devices in bulk.

3,000 / Tape & Reel 6.1 6.8 7.5 450 2.5 2.7 3.2

1,000 per Box 6.1 6.8 7.5 450 2.5 2.7 3.2

3,000 / Tape & Reel 13.5 15 16.5 400 2.5 2.9 3.2

1,000 per Box 13.5 15 16.5 400 2.5 2.9 3.2

3,000 / Tape & Reel 19.8 22 24.2 350 2.5 2.9 3.2

3,000 / Tape & Reel 24.3 27 29.7 300 2.5 3.0 3.2

3,000 / Tape & Reel 29.7 33 36.3 200 2.5 3.0 3.2

1,000 per Box 29.7 33 36.3 200 2.5 3.0 3.2

†

Min Nom Max Typ Min Typ Max

Q, Figure of Merit

VR = 4.0 Vdc,

f = 50 MHz

TR, Tuning Ratio

C2/C

f = 1.0 MHz

PARAMETER TEST METHODS

1. CT, DIODE CAPACITANCE

(CT = CC + CJ). CT i s m easured a t 1 .0 M Hz u s ing a c apacitance bridge (Boonton Electronics Model 75A or equivalent).

2. TR, TUNING RATIO

TR is the ratio of CT measured at 2.0 Vdc divided by C measured at 30 Vdc.

3. Q, FIGURE OF MERIT

Q is c alculated b y t aking t he G a nd C readings of an a dmittance bridge at the specified frequency and substituting in the following equations:

2pfC

Q +

http://onsemi.com

(Boonton Electronics Model 33AS8 or equivalent). Use Lead Length [ 1/16″.

4. TCC, DIODE CAPACITANCE TEMPERATURE COEFFICIENT

TCC is guaranteed by comparing CT at VR = 4.0 Vdc, f = 1.0

MHz, TA = −65°C with CT at VR = 4.0 Vdc, f = 1.0 MHz, T = +85°C in the following equation, which defines TCC:

CT() 85°C) – CT(–65°C)

85 ) 65

· CT(25°C)

Accuracy limited by measurement of CT to ±0.1 pF.

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