Datasheet MMBV2101LT1 Datasheet (ON Semiconductor)

MMBV2101LT1 Series,
MV2105, MV2101, MV2109,
LV2209

Preferred Device

Silicon Tuning Diodes

These devices are designed in popular plastic packages for the high
volume requirements of FM Radio and TV tuning and AFC, general
frequency control and tuning applications. They provide solid−state
reliability in replacement of mechanical tuning methods. Also
available in a Surface Mount Package up to 33 pF.

Features

• High Q

• Controlled and Uniform Tuning Ratio

• Standard Capacitance Tolerance − 10%

• Complete Typical Design Curves

• Pb−Free Packages are Available

MAXIMUM RATINGS

Rating Symbol Value Unit

Reverse Voltage V
Forward Current I
Forward Power Dissipation

@ TA = 25°C MMBV21xx
Derate above 25°C

@ TA = 25°C MV21xx
Derate above 25°C LV2209

Junction Temperature T
Storage Temperature Range T

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

ELECTRICAL CHARACTERISTICS (T

Characteristic Symbol Min Typ Max Unit

Reverse Breakdown Voltage
(IR = 10 mAdc)

MMBV21xx, MV21xx

LV2209

Reverse Voltage Leakage Current
(VR = 25 Vdc, TA = 25°C)

Diode Capacitance Temperature Co­efficient (VR = 4.0 Vdc, f = 1.0 MHz)

R

F

P

D

J

stg

= 25°C unless otherwise noted)

A

V

(BR)R

I

R

TC

C

30 Vdc

200 mAdc

225

1.8

280

2.8

+150 °C

−55 to +150 °C

3025−−−

− − 0.1

− 280 − ppm/°C

mW

mW/°C

mW

mW/°C

Vdc

−
mAdc

http://onsemi.com

6.8−100 pF, 30 VOLTS
VOLTAGE VARIABLE

CAPACITANCE DIODES

3

Cathode

Cathode

3

1

2

SOT−23 (TO−236)

xxx = Specific Device Code
M = Date Code*
G = Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

TO−92 (TO−226AC)

1

2

yyyyyy = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package

(Note: Microdot may be in either location)

SOT−23

2

TO−92

CASE 318−08

STYLE 8

CASE 182

STYLE 1

1

Anode

1

Anode

MARKING

DIAGRAMS

xxx M G

1

yy

yyyy

AYWW G

G

G

© Semiconductor Components Industries, LLC, 2006

January, 2006 − Rev. 4

See detailed ordering and shipping information in the package

ORDERING INFORMATION

dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use
and best overall value.

1 Publication Order Number:

MMBV2101LT1/D

MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209

CT, Diode Capacitance

VR = 4.0 Vdc, f = 1.0 MHz

Device Marking Package Shipping

MMBV2101LT1 M4G SOT−23 3,000 / Tape & Reel 6.1 6.8 7.5 450 2.5 2.7 3.2
MMBV2101LT1G M4G SOT−23

(Pb−Free)
MMBV2101L M4G SOT−23 Bulk (Note 1) 6.1 6.8 7.5 450 2.5 2.7 3.2
MV2101 MV2101 TO−92 1,000 per Box 6.1 6.8 7.5 450 2.5 2.7 3.2
MV2101G MV2101 TO−92

(Pb−Free)
MMBV2103LT1 4H SOT−23 3,000 / Tape & Reel 9.0 10 11 400 2.5 2.9 3.2
MMBV2105LT1 4U SOT−23 3,000 / Tape & Reel 13.5 15 16.5 400 2.5 2.9 3.2
MMBV2105LT1G 4U SOT−23

(Pb−Free)
MMBV2105L 4U SOT−23 Bulk (Note 1) 13.5 15 16.5 400 2.5 2.9 3.2
MV2105 MV2105 TO−92 1,000 per Box 13.5 15 16.5 400 2.5 2.9 3.2
MV2105G MV2105 TO−92

(Pb−Free)
MMBV2107LT1 4W SOT−23 3,000 / Tape & Reel 19.8 22 24.2 350 2.5 2.9 3.2
MMBV2107LT1G 4W SOT−23

(Pb−Free)
MMBV2107L 4W SOT−23 Bulk (Note 1) 19.8 22 24.2 350 2.5 2.9 3.2
MMBV2108LT1 4X SOT−23 3,000 / Tape & Reel 24.3 27 29.7 300 2.5 3.0 3.2
MMBV2108LT1G 4X SOT−23

(Pb−Free)
LV2209 LV2209 TO−92 1,000 per Box 29.7 33 36.3 200 2.5 3.0 3.2
MMBV2109LT1 4J SOT−23 3,000 / Tape & Reel 29.7 33 36.3 200 2.5 3.0 3.2
MMBV2109LT1G 4J SOT−23

(Pb−Free)
MMBV2109L 4J SOT−23 Bulk (Note 1) 29.7 33 36.3 200 2.5 3.0 3.2
MV2109 MV2109 TO−92 1,000 per Box 29.7 33 36.3 200 2.5 3.0 3.2
MV2109G MV2109 TO−92

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specification Brochure, BRD8011/D.

1. MMBV2101LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1, are also available in bulk. Use the device title and drop the “T1”
suffix when ordering any of these devices in bulk.

3,000 / Tape & Reel 6.1 6.8 7.5 450 2.5 2.7 3.2

1,000 per Box 6.1 6.8 7.5 450 2.5 2.7 3.2

3,000 / Tape & Reel 13.5 15 16.5 400 2.5 2.9 3.2

1,000 per Box 13.5 15 16.5 400 2.5 2.9 3.2

3,000 / Tape & Reel 19.8 22 24.2 350 2.5 2.9 3.2

3,000 / Tape & Reel 24.3 27 29.7 300 2.5 3.0 3.2

3,000 / Tape & Reel 29.7 33 36.3 200 2.5 3.0 3.2

1,000 per Box 29.7 33 36.3 200 2.5 3.0 3.2

†

Min Nom Max Typ Min Typ Max

pF

Q, Figure of Merit

VR = 4.0 Vdc,

f = 50 MHz

TR, Tuning Ratio

C2/C

30

f = 1.0 MHz

PARAMETER TEST METHODS

1. CT, DIODE CAPACITANCE

(CT = CC + CJ). CT i s m easured a t 1 .0 M Hz u s ing a c apacitance
bridge (Boonton Electronics Model 75A or equivalent).

2. TR, TUNING RATIO

TR is the ratio of CT measured at 2.0 Vdc divided by C
measured at 30 Vdc.

3. Q, FIGURE OF MERIT

Q is c alculated b y t aking t he G a nd C readings of an a dmittance
bridge at the specified frequency and substituting in the
following equations:

2pfC

Q +

G

http://onsemi.com

(Boonton Electronics Model 33AS8 or equivalent). Use Lead
Length [ 1/16″.

4. TCC, DIODE CAPACITANCE TEMPERATURE
COEFFICIENT

TCC is guaranteed by comparing CT at VR = 4.0 Vdc, f = 1.0

T

MHz, TA = −65°C with CT at VR = 4.0 Vdc, f = 1.0 MHz, T
= +85°C in the following equation, which defines TCC:

TC

CT() 85°C) – CT(–65°C)

Ť

+

C

85 ) 65

Ť

·
CT(25°C)

10

Accuracy limited by measurement of CT to ±0.1 pF.

2

A

6

MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209

TYPICAL DEVICE CHARACTERISTICS

1000

500

200

MMBV2109LT1/MV2109

100

50

MMBV2105LT1/MV2105

20

MMBV2101LT1/MV2101

10

, DIODE CAPACITANCE (pF)

5.0

T

C

2.0

1.0

0.1

0.5

Figure 1. Diode Capacitance versus Reverse Voltage

1.040

1.030

1.020

1.010

1.000

0.990

0.980

NORMALIZED DIODE CAPACITANCE

0.970

0.960

NORMALIZED TO C

TJ, JUNCTION TEMPERATURE (°C)

VR = 2.0 Vdc

VR = 30 Vdc

at TA = 25°C

VR = (CURVE)

Figure 2. Normalized Diode Capacitance versus

Junction Temperature

TA = 25°C
f = 1.0 MHz

1.0 2.00.2 10

VR, REVERSE VOLTAGE (VOLTS)

VR = 4.0 Vdc

0.50

0.20

T

+100

, REVERSE CURRENT (nA)

0.10

R

I

0.05

0.02

+125−75 −25 0 +25 +50−50 +75

0.01

3.00.3

100

50

20
10

5.0

2.0

1.0

0

5.0

5.0 10 2015 25

VR, REVERSE VOLTAGE (VOLTS)

Figure 3. Reverse Current versus Reverse Bias

3020

TA = 125°C

TA = 75°C

TA = 25°C

30

Voltage

5000
3000

2000

1000

500
300

200

100

Q, FIGURE OF MERIT

50

30
20

10

1.0 2.0 5.0 7.0

MMBV2109LT1

3.0

VR, REVERSE VOLTAGE (VOLTS)

MMBV2101LT1/MV2101

10

Figure 4. Figure of Merit versus Reverse Voltage

TA = 25°C
f = 50 MHz

20

30

http://onsemi.com

3

5000
3000

2000

1000

500

300
200

100

Q, FIGURE OF MERIT

50
30

TA = 25°C

20

VR = 4.0 Vdc

10

10

Figure 5. Figure of Merit versus Frequency

MMBV2101LT1/MV2101

MMBV2109LT1/MV2109

30 50 70

20 200 250

f, FREQUENCY (MHz)

100

MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AN

D

H

SEE VIEW C

E

c

0.25

3

E

12

b

e

q

A

L

A1

L1

VIEW C

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.

4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.

DIMAMIN NOM MAX MIN

A1 0.01 0.06 0.10 0.001

b 0.37 0.44 0.50 0.015
c 0.09 0.13 0.18 0.003
D 2.80 2.90 3.04 0.110
E 1.20 1.30 1.40 0.047
e 1.78 1.90 2.04 0.070
L 0.10 0.20 0.30 0.004

L1

H

STYLE 8:

PIN 1. ANODE

MILLIMETERS

0.89 1.00 1.11 0.035

0.35 0.54 0.69 0.014 0.021 0.029

2.10 2.40 2.64 0.083 0.094 0.104

E

2. NO CONNECTION

3. CATHODE

INCHES

NOM MAX

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

SOLDERING FOOTPRINT*

0.95

0.95

0.037

0.037

2.0

0.079

0.9

0.035

SCALE 10:1

0.8

ǒ

inches

mm

Ǔ

0.031

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

http://onsemi.com

4

MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209

PACKAGE DIMENSIONS

TO−92 (TO−226AC)

CASE 182−06

ISSUE L

SEATING
PLANE

A

B

R

D

P

XX

L

K

J

SECTION X−X

D

G

H

12

V

N

C

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND ZONE R IS
UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.

DIM MIN MAX MIN MAX

A 0.175 0.205 4.45 5.21
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
G 0.050 BSC 1.27 BSC
H 0.100 BSC 2.54 BSC
J 0.014 0.016 0.36 0.41
K 0.500 −−− 12.70 −−−
L 0.250 −−− 6.35 −−−
N 0.080 0.105 2.03 2.66
P −−− 0.050 −−− 1.27
R 0.115 −−− 2.93 −−−
V 0.135 −−− 3.43 −−−

STYLE 1:

PIN 1. ANODE

2. CATHODE

MILLIMETERSINCHES

N

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MMBV2101LT1/D

5