ON Semiconductor MMBTA92LT1 Technical data
MMBTA92LT1
Preferred Device
High Voltage Transistor
PNP Silicon
Features
• Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
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MAXIMUM RATINGS
Rating Symbol MMBTA92 Unit
Collector−Emitter Voltage V
Collector−Base Voltage V
Emitter−Base Voltage V
Collector Current − Continuous I
CEO
CBO
EBO
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
Alumina Substrate, (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature TJ, T
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
P
R
P
R
C
D
JA
D
JA
−55 to +150 °C
stg
−300 Vdc
−300 Vdc
−5.0 Vdc
−500 mAdc
225
1.8
556 °C/W
300
2.4
417 °C/W
mW
mW/°C
mW
mW/°C
COLLECTOR
3
1
BASE
2
EMITTER
3
MARKING
DIAGRAM
1
2
SOT−23 (TO−236AF)
CASE 318
2D
Style 6
2D = Specific Device Code
ORDERING INFORMATION
Device Package Shipping
MMBTA92LT1 SOT−23 3000 / Tape & Reel
MMBTA92LT1G SOT−23
MMBTA92LT3 SOT−23 10000 / Tape & Reel
3000 / Tape & Reel
†
Semiconductor Components Industries, LLC, 2003
November, 2003 − Rev. 4
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
MMBTA92LT1/D
MMBTA92LT1
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3)
(IC = −1.0 mAdc, IB = 0)
Collector−Base Breakdown Voltage
(IC = −100 Adc, IE = 0)
Emitter−Base Breakdown Voltage
(IE = −100 Adc, IC = 0)
Collector Cutoff Current
(VCB = −200 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = −3.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 3)
DC Current Gain
= −1.0 mAdc, VCE = −10 Vdc)
(I
C
(I
= −10 mAdc, VCE = −10 Vdc)
C
(I
= −30 mAdc, VCE = −10 Vdc)
C
Collector−Emitter Saturation Voltage
(IC = −20 mAdc, IB = −2.0 mAdc)
Base−Emitter Saturation Voltage
(IC = −20 mAdc, IB = −2.0 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz)
Collector−Base Capacitance
(VCB = −20 Vdc, IE = 0, f = 1.0 MHz)
3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
Symbol Min Max Unit
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
V
CE(sat)
V
BE(sat)
f
C
FE
−300 −
−300 −
−5.0 − Vdc
− −0.25
− −0.1 Adc
25
40
25
−
−
−
− −0.5
− −0.9 Vdc
T
cb
50 − MHz
− 6.0
Vdc
Vdc
Adc
Vdc
pF
−
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2
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