ON Semiconductor MMBTA92LT1 Technical data

MMBTA92LT1

Preferred Device

High Voltage Transistor

PNP Silicon

Features

• Pb−Free Package May be Available. The G−Suffix Denotes a

Pb−Free Lead Finish

http://onsemi.com

MAXIMUM RATINGS

Rating Symbol MMBTA92 Unit

Collector−Emitter Voltage V
Collector−Base Voltage V
Emitter−Base Voltage V
Collector Current − Continuous I

CEO
CBO
EBO

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C

Thermal Resistance,

Junction−to−Ambient

Total Device Dissipation
Alumina Substrate, (Note 2) TA = 25°C
Derate above 25°C

Thermal Resistance, Junction−to−Ambi­ent

Junction and Storage Temperature TJ, T

1. FR−5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

P

R

P

R

C

D



JA

D



JA

−55 to +150 °C

stg

−300 Vdc

−300 Vdc

−5.0 Vdc

−500 mAdc

225

1.8

556 °C/W

300

2.4

417 °C/W

mW

mW/°C

mW

mW/°C

COLLECTOR

3

1

BASE

2

EMITTER

3

MARKING
DIAGRAM

1

2

SOT−23 (TO−236AF)

CASE 318

2D

Style 6

2D = Specific Device Code

ORDERING INFORMATION

Device Package Shipping

MMBTA92LT1 SOT−23 3000 / Tape & Reel
MMBTA92LT1G SOT−23
MMBTA92LT3 SOT−23 10000 / Tape & Reel

3000 / Tape & Reel

†

 Semiconductor Components Industries, LLC, 2003

November, 2003 − Rev. 4

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

Preferred devices are recommended choices for future use
and best overall value.

1 Publication Order Number:

MMBTA92LT1/D

MMBTA92LT1

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 3)
(IC = −1.0 mAdc, IB = 0)

Collector−Base Breakdown Voltage
(IC = −100 Adc, IE = 0)

Emitter−Base Breakdown Voltage
(IE = −100 Adc, IC = 0)

Collector Cutoff Current
(VCB = −200 Vdc, IE = 0)

Emitter Cutoff Current
(VEB = −3.0 Vdc, IC = 0)

ON CHARACTERISTICS (Note 3)

DC Current Gain

= −1.0 mAdc, VCE = −10 Vdc)

(I

C

(I

= −10 mAdc, VCE = −10 Vdc)

C

(I

= −30 mAdc, VCE = −10 Vdc)

C

Collector−Emitter Saturation Voltage
(IC = −20 mAdc, IB = −2.0 mAdc)

Base−Emitter Saturation Voltage
(IC = −20 mAdc, IB = −2.0 mAdc)

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product
(IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz)

Collector−Base Capacitance
(VCB = −20 Vdc, IE = 0, f = 1.0 MHz)

3. Pulse Test: Pulse Width  300 s, Duty Cycle  2.0%.

Symbol Min Max Unit

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CBO

I

EBO

h

V

CE(sat)

V

BE(sat)

f

C

FE

−300 −

−300 −

−5.0 − Vdc

− −0.25

− −0.1 Adc

25
40
25

−

−

−

− −0.5

− −0.9 Vdc

T

cb

50 − MHz

− 6.0

Vdc

Vdc

Adc

Vdc

pF

−

http://onsemi.com

2

MMBTA92LT1

300

250

200

150

, DC CURRENT GAIN

100

FE

h

50

0

0.1 1.0

100

Cib @ 1MHz

10

Ccb @ 1MHz

T

= +125°C

J

25°C

−55°C

IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

150

130

110

90

VCE = 10 Vdc

10

100

1.0

C, CAPACITANCE (pF)

0.1

0.1

1.4

1.2

1.0

0.8

0.6

V, VOLTAGE (VOLTS)

0.4

0.2

0.0

1.0 10
VR, REVERSE VOLTAGE (VOLTS)

Figure 2. Capacitance

IC, COLLECTOR CURRENT (mA)

100

1000

100100.1 1.0

70

50

30

T

f, CURRENT−GAIN  BANDWIDTH (MHz)

10

1

3579

IC, COLLECTOR CURRENT (mA)

Figure 3. Current−Gain − Bandwidth

V

CE(sat)

V

CE(sat)

V

CE(sat)

V

BE(sat)

V

BE(sat)

V

BE(sat)

V

BE(on)

V

BE(on)

V

BE(on)

= 25°C

T

J

V

= 20 Vdc

CE

F = 20 MHz

@ 25°C, I
@ 125°C, I
@ −55°C, I
@ 25°C, I

@ 125°C, I
@ −55°C, I

@ 25°C, V
@ 125°C, V
@ −55°C, V

C/IB

C/IB

CE

C/IB

C/IB

= 10

C/IB

C/IB

= 10 V

CE

CE

1917151311

= 10

= 10
= 10

= 10

= 10

= 10 V
= 10 V

21

Figure 4. “ON” Voltages

http://onsemi.com

3

MMBTA92LT1

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AH

A

L

3

1

2

S

B

GV

C

D

H

K

J

SOLDERING FOOTPRINT*

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.

4. 318−03 AND −07 OBSOLETE, NEW STANDARD
318−08.

INCHES

DIMAMIN MAX MIN MAX

0.1102 0.1197 2.80 3.04

B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
K 0.0140 0.0285 0.35 0.69
L 0.0350 0.0401 0.89 1.02
S 0.0830 0.1039 2.10 2.64
V 0.0177 0.0236 0.45 0.60

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

MILLIMETERS

0.95

0.95

0.037

0.037

2.0

0.079

0.9

0.035

0.8

0.031

mm



SCALE 10:1

inches



Figure 5. SOT−23

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [e-mail]

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center

2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Phone: 81−3−5773−3850

http://onsemi.com

4

ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder

For additional information, please contact your
local Sales Representative.

MMBTA92LT1/D

WWW.ALLDATASHEET.COM

Copyright © Each Manufacturing Company.

All Datasheets cannot be modified without permission.

This datasheet has been download from :

www.AllDataSheet.com

100% Free DataSheet Search Site.

Free Download.

No Register.

Fast Search System.

www.AllDataSheet.com