ON Semiconductor MMBD7000LT1G Technical data
MMBD7000LT1G
Dual Switching Diode
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
MAXIMUM RATINGS (EACH DIODE)
Rating Symbol Value Unit
Reverse Voltage V
Forward Current I
Peak Forward Surge Current I
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
R
F
FM(surge)
100 Vdc
200 mAdc
500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1)TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to
Ambient
Total Device Dissipation
Alumina Substrate, (Note 2)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature TJ, T
1. FR− 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
P
D
R
q
JA
P
D
R
q
JA
stg
225
1.8
556 °C/W
300
2.4
417 °C/W
−55 to +150 °C
mW
mW/°C
mW
mW/°C
1
ANODE
1
2
3
CATHODE/ANODE
3
SOT−23 (TO−236AB)
2
CATHODE
CASE 318
STYLE 11
MARKING DIAGRAM
M5C MG
G
1
M5C = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device Package Shipping
MMBD7000LT1G SOT−23
(Pb−Free)
MMBD7000LT3G SOT−23
(Pb−Free)
3000 Tape & Reel
10,000 Tape & Reel
†
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 5
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1 Publication Order Number:
MMBD7000LT1/D
MMBD7000LT1G
ELECTRICAL CHARACTERISTICS (T
Characteristic
= 25°C unless otherwise noted) (EACH DIODE)
A
Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
= 100 mAdc)
(I
(BR)
V
(BR)
100 − Vdc
Reverse Voltage Leakage Current
(VR = 50 Vdc)
(V
= 100 Vdc)
R
= 50 Vdc, 125°C)
(V
R
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 100 mAdc)
Reverse Recovery Time
I
R
I
R2
I
R3
V
F
t
rr
−
−
−
0.55
0.67
0.75
1.0
3.0
100
0.7
0.82
1.1
− 4.0 ns
(IF = IR = 10 mAdc) (Figure 1)
Capacitance (VR = 0 V) C − 1.5 pF
mAdc
Vdc
+10 V
50 W OUTPUT
GENERATOR
820 W
PULSE
0.1 mF
2.0 k
100 mH
I
t
t
r
I
F
DUT
0.1 mF
p
10%
90%
t
50 W INPUT
SAMPLING
OSCILLOSCOPE
V
R
INPUT SIGNAL
F
I
R
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so I
Notes: 3. tp » t
rr
is equal to 10 mA.
R(peak)
Figure 1. Recovery Time Equivalent Test Circuit
t
rr
i
R(REC)
t
= 1.0 mA
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at i
= 1.0 mA)
R(REC)
http://onsemi.com
2
Loading...