ON Semiconductor MKPV120 Technical data

查询MKP3V120供应商
MKP3V120, MKP3V240
Preferred Device
Sidac High V oltage
Bidirectional Triggers
High Pressure Sodium Vapor Lighting
Strobes and Flashers
Ignitors
High Voltage Regulators
Pulse Generators
Used to Trigger Gates of SCR’s and Triacs
Indicates UL Registered — File #E116110
Device Marking: Logo, Device Type, e.g., MKP3V120, Date Code
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SIDACS
()
1 AMPERE RMS
120 and 240 VOLTS
MT1 MT2
MAXIMUM RATINGS (T
Rating
Peak Repetitive Off–State V oltage
(Sine Wave, 50 to 60 Hz, TJ = –40 to 125°C)
On-State RMS Current
(TL = 80°C, Lead Length = 3/8″, All Conduction Angles)
Peak Non–Repetitive Surge Current
(60 Hz One Cycle Sine Wave, Peak Value, TJ = 125°C)
Operating Junction Temperature Range T
Storage Temperature Range T
= 25°C unless otherwise noted)
J
MKP3V120 MKP3V240
Symbol Value Unit
V
DRM
V
RRM
I
T(RMS)
I
TSM
J
stg
,
"
90
"
180
"
1.0 Amp
"
20 Amps
–40 to
+125
–40 to
+150
Volts
°C
°C
SURMETIC 50
PLASTIC AXIAL
(No Polarity)
CASE 267
STYLE 2
ORDERING INFORMATION
Device Package Shipping
MKP3V120 SURMETIC 50 Bulk 500/Bag MKP3V120RL Tape and Reel
MKP3V240 SURMETIC 50 Bulk 500/Bag MKP3V240RL Tape and Reel
Preferred devices are recommended choices for future use and best overall value.
SURMETIC 50
1.5K/Reel
SURMETIC 50
1.5K/Reel
Semiconductor Components Industries, LLC, 2000
May, 2000 – Rev. 3
1 Publication Order Number:
MKP3V120/D
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Lead
(Lead Length = 3/8″)
Lead Solder Temperature
(Lead Length w 1/16 from Case, 10 s Max)
MKP3V120, MKP3V240
R
θJL
T
L
15 °C/W
260 °C
ELECTRICAL CHARACTERISTICS (T
Characteristic
= 25°C unless otherwise noted; Electricals apply in both directions)
C
OFF CHARACTERISTICS
Repetitive Peak Off–State Current
(50 to 60 Hz Sine Wave) V
= 90 V MKP3V120
DRM
V
= 180 V MKP3V240
DRM
ON CHARACTERISTICS
Breakover Voltage, IBO = 200 µA
Breakover Current I Peak On–State Voltage
(ITM = 1 A Peak, Pulse Width 300 µs, Duty Cycle 2%)
Dynamic Holding Current
(Sine Wave, 60 Hz, RL = 100 Ω)
Switching Resistance
(Sine Wave, 50 to 60 Hz)
MKP3V120 MKP3V240
DYNAMIC CHARACTERISTICS
Critical Rate–of–Rise of On–State Current,
Critical Damped Waveform Circuit (IPK = 130 Amps, Pulse Width = 10 µsec)
Symbol Min Typ Max Unit
I
DRM
V
BO
BO
V
TM
I
H
R
S
di/dt 120 A/µs
10 µA
110 220
200 µA — 1.1 1.5 Volts
100 mA
0.1 k
— —
130 250
Volts
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2
MKP3V120, MKP3V240
130
0
Voltage Current Characteristic of SIDAC
(Bidirectional Device)
+ Current
Symbol Parameter
I
DRM
V
DRM
V
BO
I
BO
I
H
V
TM
I
TM
°
120
110
100
90
80
, MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)
C
T
Off State Leakage Current Off State Repetitive Blocking Voltage Breakover Voltage Breakover Current Holding Current On State Voltage Peak on State Current
0.2
0.4
I
, AVERAGE ON–STATE CURRENT (AMPS)
T(AV)
0.6
I
TM
I
H
V
TM
I
DRM
V
R
+
S
DRM
(V
(BO)–VS
(IS–I
Slope = R
V
S
V
(BO)
I
S
(BO)
)
)
S
I
(BO) + Voltage
CURRENT DERATING
α
α = Conduction Angle
TJ Rated = 125°C
a
= 180°
1.0
0.80
1.61.2
1.4 2.01.8
140 120 100
80 60
TEMPERATURE ( C)°
40
, MAXIMUM ALLOWABLE AMBIENT
A
T
20
0
0.2
a
= 180°
0.4
0.6
I
, AVERAGE ON–STATE CURRENT (AMPS)
T(AV)
1.00
0.8 1.2 1.4
α = Conduction Angle
α
TJ Rated = 125°C
1.6 1.8 2.
1.0
0.8
0.6
0.4
0.3
0.2
0.1
, INSTANTANEOUS ON–STATE CURRENT (AMPS)
T
I
Figure 1. Maximum Case T emperature Figure 2. Maximum Ambient T emperature
a
= 180°
25°C
0.9
VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)
1.0 1.10.8
125°C
1.2
1.3
1.25
1.00
0.75
0.50
0.25
, MAXIMUM AVERAGE POWER DISSIPATION (W ATTS)
AV
P
α
α = Conduction Angle
TJ Rated = 125°C
I
T(AV)
0.2 0.60
0.4 0.8
, AVERAGE ON–STATE CURRENT (AMPS)
Figure 3. T ypical Forward Voltage Figure 4. T ypical Power Dissipation
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1.0
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