ON Semiconductor MJW21195-PNP, MJW21196-NPN Technical data

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MJW21195 (PNP)
MJW21196 (NPN)

Preferred Devices

Silicon Power Transistors

The MJW21195 and MJW21196 utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.

• Total Harmonic Distortion Characterized

• High DC Current Gain –

hFE = 20 Min @ IC = 8 Adc

• Excellent Gain Linearity

• High SOA: 2.25 A, 80 V, 1 Second

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector–Emitter Voltage – 1.5 V V
Collector Current – Continuous

Collector Current – Peak (Note 1)

Base Current – Continuous I
Total Power Dissipation @ TC = 25°C

Derate Above 25°C

Operating and Storage Junction

Temperature Range

CEO
CBO
EBO
CEX

I

P

TJ, T

C

B

D

stg

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance,

Junction to Case

Thermal Resistance,

Junction to Ambient

1. Pulse Test: Pulse Width = 5 s, Duty Cycle ≤ 10%.

R

R

θJC

θJA

250 Vdc
400 Vdc

5.0 Vdc

400 Vdc

16
30

5.0 Adc

200

1.43

–65 to

+150

0.7 °C/W

40 °C/W

Adc

Watts

W/°C

°C

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16 AMPERES

COMPLEMENTARY

SILICON POWER

TRANSISTORS

250 VOLTS

200 WATTS

1

2

3

TO–247

CASE 340K

STYLE 3

MARKING DIAGRAM

MJW
2119x
LLYWW

1 BASE

2 COLLECTOR

3 EMITTER

 Semiconductor Components Industries, LLC, 2002

March, 2002 – Rev . 1

MJW2119x= Device Code
x = 5 or 6
LL = Location Code
Y = Year
WW = Work Week

ORDERING INFORMATION

Device Package Shipping

MJW21195 TO–247
MJW21196 TO–247 30 Units/Rail

Preferred devices are recommended choices for future use
and best overall value.

1 Publication Order Number:

30 Units/Rail

MJW21195/D

MJW21195 (PNP) MJW21196 (NPN)

ELECTRICAL CHARACTERISTICS (T

Characteristic

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0)
Collector Cutoff Current (VCE = 200 Vdc, IB = 0) I

ELECTRICAL CHARACTERISTICS (T

Characteristic

OFF CHARACTERISTICS

Emitter Cutoff Current (VCE = 5 Vdc, IC = 0)
Collector Cutoff Current (VCE = 250 Vdc, V

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

(VCE = 50 Vdc, t = 1 s (non–repetitive)
(VCE = 80 Vdc, t = 1 s (non–repetitive)

ON CHARACTERISTICS

DC Current Gain

(IC = 8 Adc, VCE = 5 Vdc)

(IC = 16 Adc, IB = 5 Adc)
Base–Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) V
Collector–Emitter Saturation Voltage

(IC = 8 Adc, IB = 0.8 Adc)

(IC = 16 Adc, IB = 3.2 Adc)

DYNAMIC CHARACTERISTICS

Total Harmonic Distortion at the Output

V

= 28.3 V, f = 1 kHz, P

RMS

(Matched pair hFE = 50 @ 5 A/5 V) h

Current Gain Bandwidth Product

(IC = 1 Adc, VCE = 10 Vdc, f
Output Capacitance

(VCB = 10 Vdc, IE = 0, f

LOAD

= 1 MHz)

test

= 1 MHz)

test

= 25°C unless otherwise noted)

C

= 25°C unless otherwise noted)

C

= 1.5 Vdc) I

BE(off)

= 100 W

RMShFE

unmatched

FE

matched

Symbol Min Typical Max Unit

V

CEO(sus)

CEO

Symbol Min Typical Max Unit

I

EBO
CEX

I

S/b

h

FE

BE(on)

V

CE(sat)

T

HD

f

T

C

ob

250 – – Vdc

– – 100 µAdc

– – 50 µAdc
– – 50 µAdc

4.0

2.25

20

8
– – 2.0 Vdc

–
–

–

–
4 – – MHz

– – 500 pF

–
–

–
–

–
–

0.8

0.08

–
–

80

–

1.0
3

–

–

Adc

Vdc

%

, CURRENT BANDWIDTH PRODUCT (MHz)

T

F

6.5

6.0

5.5

5.0

4.5

4.0

3.5

3.0

2.5

2.0

PNP MJW21195 NPN MJW21196

VCE = 10 V

VCE = 5 V

T

= 25°C

J

f

= 1 MHz

test

1.0 100.1

IC, COLLECTOR CURRENT (AMPS)

Figure 1. Typical Current Gain

Bandwidth Product

7.5

7.0

6.5

6.0

5.5

5.0

4.5

4.0

3.5

3.0

2.5

2.0

, CURRENT BANDWIDTH PRODUCT (MHz)

1.5

T

F

1.0

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2

VCE = 5 V

T

= 25°C

J

f

= 1 MHz

test

1.0 100.1

IC, COLLECTOR CURRENT (AMPS)

Figure 2. Typical Current Gain

Bandwidth Product

VCE = 10 V

1000

100

, DC CURRENT GAIN

FE

h

MJW21195 (PNP) MJW21196 (NPN)

TYPICAL CHARACTERISTICS

PNP MJW21195 NPN MJW21196

1000

T

= 100°C

J

-25°C

25°C

100

, DC CURRENT GAIN

FE

h

T

= 100°C

J

-25°C

25°C

1000

100

, DC CURRENT GAIN

FE

h

10

10

VCE = 20 V

100101.00.1

IC, COLLECTOR CURRENT (AMPS)

VCE = 20 V

10

IC, COLLECTOR CURRENT (AMPS)

Figure 3. DC Current Gain, VCE = 20 V Figure 4. DC Current Gain, VCE = 20 V

VCE = 5 V

PNP MJW21195

T

= 100°C

J

25°C

-25°C

IC, COLLECTOR CURRENT (AMPS)

1000

100

, DC CURRENT GAIN

FE

h

VCE = 5 V

100101.00.1

10

NPN MJW21196

T

= 100°C

J

25°C

-25°C

IC, COLLECTOR CURRENT (AMPS)

Figure 5. DC Current Gain, VCE = 5 V Figure 6. DC Current Gain, VCE = 5 V

100101.00.1

100101.00.1

, COLLECTOR CURRENT (A)
I

PNP MJW21195

30

25

20

15

10

C

5.0

0

0

5.0 10 15 20 25

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

2.0 A

1.5 A

1.0 A

IB = 0.5 A

T

= 25°C

J

Figure 7. Typical Output Characteristics

, COLLECTOR CURRENT (A)

C

I

30

25

20

15

10

5.0

0

0

5.0 10 15 20 25

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 8. Typical Output Characteristics

NPN MJW21196

2.0 A

1.5 A

1.0 A

IB = 0.5 A

T

= 25°C

J

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