ON Semiconductor MJW21195, MJW21195G, MJW21196, MJW21196G Service Manual

MJW21195 (PNP)

S

and best overall value.

MJW21196 (NPN)

Preferred Devices

Silicon Power Transistors

The MJW21195 and MJW21196 utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.

Features

• Total Harmonic Distortion Characterized

• High DC Current Gain − h

• Excellent Gain Linearity

• High SOA: 2.25 A, 80 V, 1 Second

• Pb−Free Packages are Available*

= 20 Min @ IC = 8 Adc

FE

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16 AMPERES

COMPLEMENTARY

SILICON POWER TRANSISTOR

250 VOLTS, 200 WATTS

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage V
Collector−Base Voltage V
Emitter−Base Voltage V
Collector−Emitter Voltage − 1.5 V V
Collector Current − Continuous

Collector Current − Peak (Note 1)

Base Current − Continuous I
Total Power Dissipation @ TC = 25°C

Derate Above 25°C
Operating and Storage Junction

Temperature Range

CEO
CBO
EBO
CEX

P

TJ, T

I

C

B

D

stg

250 Vdc
400 Vdc

5.0 Vdc

400 Vdc

16
30

5.0 Adc

200

1.43

−65 to +150

Adc

W

W/°C

°C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

R

q

JC

R

q

JA

0.7 °C/W
40 °C/W

1

2

3

MARKING DIAGRAM

MJW2119x

AYWWG

1 BASE

2 COLLECTOR

x = 5 or 6
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package

TO−247

CASE 340L

3 EMITTER

*For additional information on our Pb−Free strategy and soldering details, please

© Semiconductor Components Industries, LLC, 2006

January, 2006 − Rev. 2

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

1 Publication Order Number:

ORDERING INFORMATION

Device Package Shipping

MJW21195 TO−247 30 Units/Rail

(Pb−Free)

MJW21196 TO−247 30 Units/Rail
MJW21196G TO−247

(Pb−Free)

Preferred devices are recommended choices for future use

30 Units/RailMJW21195G TO−247

30 Units/Rail

MJW21195/D

MJW21195 (PNP) MJW21196 (NPN)

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

C

Characteristic Symbol Min Typical Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) V
Collector Cutoff Current (VCE = 200 Vdc, IB = 0) I
Emitter Cutoff Current (VCE = 5 Vdc, IC = 0) I
Collector Cutoff Current (VCE = 250 Vdc, V

= 1.5 Vdc) I

BE(off)

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

(VCE = 50 Vdc, t = 1 s (non−repetitive)
(VCE = 80 Vdc, t = 1 s (non−repetitive)

ON CHARACTERISTICS

DC Current Gain

(IC = 8 Adc, VCE = 5 Vdc)

(IC = 16 Adc, IB = 5 Adc)
Base−Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) V
Collector−Emitter Saturation Voltage

(IC = 8 Adc, IB = 0.8 Adc)

(IC = 16 Adc, IB = 3.2 Adc)

DYNAMIC CHARACTERISTICS

Total Harmonic Distortion at the Output

V

= 28.3 V, f = 1 kHz, P

RMS

LOAD

= 100 W

(Matched pair hFE = 50 @ 5 A/5 V) h

RMS

h

FE

unmatched

FE

matched

Current Gain Bandwidth Product

(IC = 1 Adc, VCE = 10 Vdc, f

= 1 MHz)

test

Output Capacitance

(VCB = 10 Vdc, IE = 0, f

= 1 MHz)

test

CEO(sus)

CEO
EBO
CEX

I

S/b

h

FE

BE(on)

V

CE(sat)

T

HD

f

T

C

ob

250 − − Vdc

− − 100

− − 50

− − 50

mAdc
mAdc
mAdc

Adc

4.0

2.25

20

8

−

−

−

−

−

−

80

−

− − 2.0 Vdc
Vdc

−

−

−

−

1.0
3

%

−

−

0.8

0.08

−

−

4 − − MHz

− − 500 pF

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2

6.5

6.0

5.5

5.0

4.5

4.0

3.5

3.0

2.5

, CURRENT BANDWIDTH PRODUCT (MHz)

T

F

2.0

1000

PNP MJW21195 NPN MJW21196

VCE = 10 V

VCE = 5 V

TJ = 25°C
f

= 1 MHz

test

IC, COLLECTOR CURRENT (AMPS)

1.0 100.1

Figure 1. Typical Current Gain

Bandwidth Product

PNP MJW21195 NPN MJW21196

MJW21195 (PNP) MJW21196 (NPN)

TYPICAL CHARACTERISTICS

7.5

7.0

6.5

6.0

5.5

5.0

4.5

4.0

3.5

3.0
TJ = 25°C

2.5
f

= 1 MHz

test

2.0

, CURRENT BANDWIDTH PRODUCT (MHz)

1.5

T

F

1.0

IC, COLLECTOR CURRENT (AMPS)

Figure 2. Typical Current Gain

Bandwidth Product

1000

VCE = 10 V

VCE = 5 V

1.0 100.1

100

, DC CURRENT GAIN

FE

h

1000

100

, DC CURRENT GAIN

FE

h

10

10

VCE = 20 V

TJ = 100°C

−25 °C

IC, COLLECTOR CURRENT (AMPS)

25°C

100

, DC CURRENT GAIN

FE

h

VCE = 20 V

100101.00.1

10

TJ = 100°C

25°C

−25 °C

IC, COLLECTOR CURRENT (AMPS)

Figure 3. DC Current Gain, VCE = 20 V Figure 4. DC Current Gain, VCE = 20 V

PNP MJW21195 NPN MJW21196

1000

VCE = 5 V

TJ = 100°C

25°C

−25 °C

IC, COLLECTOR CURRENT (AMPS)

100

, DC CURRENT GAIN

FE

h

VCE = 5 V

100101.00.1

10

TJ = 100°C

25°C

−25 °C

IC, COLLECTOR CURRENT (AMPS)

Figure 5. DC Current Gain, VCE = 5 V Figure 6. DC Current Gain, VCE = 5 V

100101.00.1

100101.00.1

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3