ON Semiconductor MJW21195-PNP, MJW21196-NPN Technical data

查询MJW21195供应商

MJW21195 (PNP)
MJW21196 (NPN)

Preferred Devices

Silicon Power Transistors

The MJW21195 and MJW21196 utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.

• Total Harmonic Distortion Characterized

• High DC Current Gain –

hFE = 20 Min @ IC = 8 Adc

• Excellent Gain Linearity

• High SOA: 2.25 A, 80 V, 1 Second

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector–Emitter Voltage – 1.5 V V
Collector Current – Continuous

Collector Current – Peak (Note 1)

Base Current – Continuous I
Total Power Dissipation @ TC = 25°C

Derate Above 25°C

Operating and Storage Junction

Temperature Range

CEO
CBO
EBO
CEX

I

P

TJ, T

C

B

D

stg

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance,

Junction to Case

Thermal Resistance,

Junction to Ambient

1. Pulse Test: Pulse Width = 5 s, Duty Cycle ≤ 10%.

R

R

θJC

θJA

250 Vdc
400 Vdc

5.0 Vdc

400 Vdc

16
30

5.0 Adc

200

1.43

–65 to

+150

0.7 °C/W

40 °C/W

Adc

Watts

W/°C

°C

http://onsemi.com

16 AMPERES

COMPLEMENTARY

SILICON POWER

TRANSISTORS

250 VOLTS

200 WATTS

1

2

3

TO–247

CASE 340K

STYLE 3

MARKING DIAGRAM

MJW
2119x
LLYWW

1 BASE

2 COLLECTOR

3 EMITTER

 Semiconductor Components Industries, LLC, 2002

March, 2002 – Rev . 1

MJW2119x= Device Code
x = 5 or 6
LL = Location Code
Y = Year
WW = Work Week

ORDERING INFORMATION

Device Package Shipping

MJW21195 TO–247
MJW21196 TO–247 30 Units/Rail

Preferred devices are recommended choices for future use
and best overall value.

1 Publication Order Number:

30 Units/Rail

MJW21195/D

MJW21195 (PNP) MJW21196 (NPN)

ELECTRICAL CHARACTERISTICS (T

Characteristic

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0)
Collector Cutoff Current (VCE = 200 Vdc, IB = 0) I

ELECTRICAL CHARACTERISTICS (T

Characteristic

OFF CHARACTERISTICS

Emitter Cutoff Current (VCE = 5 Vdc, IC = 0)
Collector Cutoff Current (VCE = 250 Vdc, V

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

(VCE = 50 Vdc, t = 1 s (non–repetitive)
(VCE = 80 Vdc, t = 1 s (non–repetitive)

ON CHARACTERISTICS

DC Current Gain

(IC = 8 Adc, VCE = 5 Vdc)

(IC = 16 Adc, IB = 5 Adc)
Base–Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) V
Collector–Emitter Saturation Voltage

(IC = 8 Adc, IB = 0.8 Adc)

(IC = 16 Adc, IB = 3.2 Adc)

DYNAMIC CHARACTERISTICS

Total Harmonic Distortion at the Output

V

= 28.3 V, f = 1 kHz, P

RMS

(Matched pair hFE = 50 @ 5 A/5 V) h

Current Gain Bandwidth Product

(IC = 1 Adc, VCE = 10 Vdc, f
Output Capacitance

(VCB = 10 Vdc, IE = 0, f

LOAD

= 1 MHz)

test

= 1 MHz)

test

= 25°C unless otherwise noted)

C

= 25°C unless otherwise noted)

C

= 1.5 Vdc) I

BE(off)

= 100 W

RMShFE

unmatched

FE

matched

Symbol Min Typical Max Unit

V

CEO(sus)

CEO

Symbol Min Typical Max Unit

I

EBO
CEX

I

S/b

h

FE

BE(on)

V

CE(sat)

T

HD

f

T

C

ob

250 – – Vdc

– – 100 µAdc

– – 50 µAdc
– – 50 µAdc

4.0

2.25

20

8
– – 2.0 Vdc

–
–

–

–
4 – – MHz

– – 500 pF

–
–

–
–

–
–

0.8

0.08

–
–

80

–

1.0
3

–

–

Adc

Vdc

%

, CURRENT BANDWIDTH PRODUCT (MHz)

T

F

6.5

6.0

5.5

5.0

4.5

4.0

3.5

3.0

2.5

2.0

PNP MJW21195 NPN MJW21196

VCE = 10 V

VCE = 5 V

T

= 25°C

J

f

= 1 MHz

test

1.0 100.1

IC, COLLECTOR CURRENT (AMPS)

Figure 1. Typical Current Gain

Bandwidth Product

7.5

7.0

6.5

6.0

5.5

5.0

4.5

4.0

3.5

3.0

2.5

2.0

, CURRENT BANDWIDTH PRODUCT (MHz)

1.5

T

F

1.0

http://onsemi.com

2

VCE = 5 V

T

= 25°C

J

f

= 1 MHz

test

1.0 100.1

IC, COLLECTOR CURRENT (AMPS)

Figure 2. Typical Current Gain

Bandwidth Product

VCE = 10 V

1000

100

, DC CURRENT GAIN

FE

h

MJW21195 (PNP) MJW21196 (NPN)

TYPICAL CHARACTERISTICS

PNP MJW21195 NPN MJW21196

1000

T

= 100°C

J

-25°C

25°C

100

, DC CURRENT GAIN

FE

h

T

= 100°C

J

-25°C

25°C

1000

100

, DC CURRENT GAIN

FE

h

10

10

VCE = 20 V

100101.00.1

IC, COLLECTOR CURRENT (AMPS)

VCE = 20 V

10

IC, COLLECTOR CURRENT (AMPS)

Figure 3. DC Current Gain, VCE = 20 V Figure 4. DC Current Gain, VCE = 20 V

VCE = 5 V

PNP MJW21195

T

= 100°C

J

25°C

-25°C

IC, COLLECTOR CURRENT (AMPS)

1000

100

, DC CURRENT GAIN

FE

h

VCE = 5 V

100101.00.1

10

NPN MJW21196

T

= 100°C

J

25°C

-25°C

IC, COLLECTOR CURRENT (AMPS)

Figure 5. DC Current Gain, VCE = 5 V Figure 6. DC Current Gain, VCE = 5 V

100101.00.1

100101.00.1

, COLLECTOR CURRENT (A)
I

PNP MJW21195

30

25

20

15

10

C

5.0

0

0

5.0 10 15 20 25

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

2.0 A

1.5 A

1.0 A

IB = 0.5 A

T

= 25°C

J

Figure 7. Typical Output Characteristics

, COLLECTOR CURRENT (A)

C

I

30

25

20

15

10

5.0

0

0

5.0 10 15 20 25

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 8. Typical Output Characteristics

NPN MJW21196

2.0 A

1.5 A

1.0 A

IB = 0.5 A

T

= 25°C

J

http://onsemi.com

3

SATURATION VOLTAGE (VOLTS)

3.0

2.5

2.0

1.5

1.0

0.5

0

T

= 25°C

J

IC/IB = 10

MJW21195 (PNP) MJW21196 (NPN)

TYPICAL CHARACTERISTICS

PNP MJW21195 NPN MJW21196

1.4
T

= 25°C

J

1.2

IC/IB = 10

V

BE(sat)

V

CE(sat)

IC, COLLECTOR CURRENT (AMPS)

1.0

0.8

0.6

0.4

SATURATION VOLTAGE (VOLTS)

0.2

100101.00.1

0

IC, COLLECTOR CURRENT (AMPS)

V

BE(sat)

V

CE(sat)

100101.00.1

, BASE-EMITTER VOLTAGE (VOLTS)

BE(on)

V

Figure 9. Typical Saturation Voltages

PNP MJW21195 NPN MJW21196

10

T

= 25°C

J

1.0

0.1

IC, COLLECTOR CURRENT (AMPS)

Figure 11. Typical Base–Emitter Voltage

VCE = 20 V
VCE = 5 V

Figure 10. Typical Saturation Voltages

10

T

= 25°C

J

1.0

, BASE-EMITTER VOLTAGE (VOLTS)

BE(on)

V

100101.00.1

0.1

IC, COLLECTOR CURRENT (AMPS)

VCE = 20 V
VCE = 5 V

100101.00.1

Figure 12. Typical Base–Emitter Voltage

http://onsemi.com

4

MJW21195 (PNP) MJW21196 (NPN)

There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC – V

CE

limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.

TYPICAL CHARACTERISTICS

PNP MJW21195 NPN MJW21196

100

10 ms

10

1 Sec

1

, COLLECTOR CURRENT (AMPS)

C

I

0.1
1 10 100 1000

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

100 ms

The data of Figure 13 is based on T

= 150°C; TC is

J(pk)

variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power than
can be handled to values less than the limitations imposed by
second breakdown.

100

10 ms

10

1 Sec

1

, COLLECTOR CURRENT (AMPS)

C

I

0.1
1 10 100 1000

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

100 ms

Figure 13. Active Region Safe Operating Area

Figure 14. Active Region Safe Operating Area

http://onsemi.com

5

MJW21195 (PNP) MJW21196 (NPN)

10000

1000

C, CAPACITANCE (pF)

100

C

ib

C

ob

T

= 25°C

J

f

= 1 MHz

test

VR, REVERSE VOLTAGE (VOLTS)

Figure 15. MJW21195 Typical Capacitance

1.2

1.1

1.0

0.9

100101.00.1

10000

1000

C, CAPACITANCE (pF)

100

C

ib

T
f

J

test

= 25°C

= 1 MHz

VR, REVERSE VOLTAGE (VOLTS)

C

ob

Figure 16. MJW21196 Typical Capacitance

100101.00.1

, TOTAL HARMONIC

DISTORTION (%)

0.8

HD

T

0.7

0.6

AUDIO PRECISION
MODEL ONE PLUS
TOTAL HARMONIC

DISTORTION

ANALYZER

FREQUENCY (Hz)

Figure 17. Typical Total Harmonic Distortion

SOURCE

AMPLIFIER

50 Ω

10000010000100010010

+50 V

DUT

DUT

0.5 Ω

0.5 Ω

8.0 Ω

-50 V

Figure 18. Total Harmonic Distortion Test Circuit

http://onsemi.com

6

MJW21195 (PNP) MJW21196 (NPN)

PACKAGE DIMENSIONS

TO–247

CASE 340K–01

ISSUE C

0.25 (0.010)MTB

A

K

0.25 (0.010)MYQ

–Q–

M

P

U

F

D

S

–B–

123

G

–T–

E

C

4

L

R

–Y–

V

H

J

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

DIM MIN MAX MIN MAX

A 19.7 20.3 0.776 0.799
B 15.3 15.9 0.602 0.626
C 4.7 5.3 0.185 0.209
D 1.0 1.4 0.039 0.055
E 1.27 REF 0.050 REF

F 2.0 2.4 0.079 0.094
G 5.5 BSC 0.216 BSC
H 2.2 2.6 0.087 0.102

J 0.4 0.8 0.016 0.031
K 14.2 14.8 0.559 0.583

L 5.5 NOM 0.217 NOM
P 3.7 4.3 0.146 0.169
Q 3.55 3.65 0.140 0.144
R 5.0 NOM 0.197 NOM
U 5.5 BSC 0.217 BSC
V 3.0 3.4 0.118 0.134

STYLE 3:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

INCHESMILLIMETERS

http://onsemi.com

7

MJW21195 (PNP) MJW21196 (NPN)

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes

without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

Literature Fulfillment:

Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA

Phone: [phone] or 800–344–3860 Toll Free USA/Canada
Fax: [phone] or 800–344–3867 Toll Free USA/Canada
Email: [e-mail]

N. American Technical Support: 800–282–9855 Toll Free USA/Canada

http://onsemi.com

JAPAN: ON Semiconductor, Japan Customer Focus Center

4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031

Phone: [phone]
Email: [e-mail]

ON Semiconductor Website: http://onsemi.com

For additional information, please contact your local
Sales Representative.

MJW21195/D

8