ON Semiconductor MJW21193-PNP, MJW21194-NPN Technical data

查询MJW21193供应商

MJW21193 (PNP)
MJW21194 (NPN)

Preferred Devices

Silicon Power Transistors

The MJW21193 and MJW21194 utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.

• Total Harmonic Distortion Characterized

• High DC Current Gain –

hFE = 20 Min @ IC = 8 Adc

• Excellent Gain Linearity

• High SOA: 2.25 A, 80 V, 1 Second

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector–Emitter Voltage – 1.5 V V
Collector Current – Continuous

Collector Current – Peak (Note 1)

Base Current – Continuous I
Total Power Dissipation @ TC = 25°C

Derate Above 25°C

Operating and Storage Junction

Temperature Range

CEO
CBO
EBO
CEX

I

P

TJ, T

C

B

D

stg

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance,

Junction to Case

Thermal Resistance,

Junction to Ambient

1. Pulse Test: Pulse Width = 5 s, Duty Cycle ≤ 10%.

R

R

θJC

θJA

250 Vdc
400 Vdc

5.0 Vdc

400 Vdc

16
30

5.0 Adc

200

1.43

–65 to

+150

0.7 °C/W

40 °C/W

Adc

Watts

W/°C

°C

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16 AMPERES

COMPLEMENTARY

SILICON POWER

TRANSISTORS

250 VOLTS

200 WATTS

1

2

3

TO–247

CASE 340K

STYLE 3

MARKING DIAGRAM

MJW
2119x
LLYWW

1 BASE

2 COLLECTOR

3 EMITTER

 Semiconductor Components Industries, LLC, 2002

March, 2002 – Rev . 1

MJW2119x= Device Code
x = 3 or 4
LL = Location Code
Y = Year
WW = Work Week

ORDERING INFORMATION

Device Package Shipping

MJW21193 TO–247
MJW21194 TO–247 30 Units/Rail

Preferred devices are recommended choices for future use
and best overall value.

1 Publication Order Number:

30 Units/Rail

MJW21193/D

MJW21193 (PNP) MJW21194 (NPN)

ELECTRICAL CHARACTERISTICS (T

Characteristic

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage

(IC = 100 mAdc, IB = 0)

Collector Cutoff Current

(VCE = 200 Vdc, IB = 0)

Emitter Cutoff Current

(VCE = 5 Vdc, IC = 0)

Collector Cutoff Current

(VCE = 250 Vdc, V

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

(VCE = 50 Vdc, t = 1 s (non–repetitive)
(VCE = 80 Vdc, t = 1 s (non–repetitive)

ON CHARACTERISTICS

DC Current Gain

(IC = 8 Adc, VCE = 5 Vdc)
(IC = 16 Adc, IB = 5 Adc)

Base–Emitter On Voltage

(IC = 8 Adc, VCE = 5 Vdc)

Collector–Emitter Saturation Voltage

(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)

DYNAMIC CHARACTERISTICS

Total Harmonic Distortion at the Output

V

= 28.3 V, f = 1 kHz, P

RMS

(Matched pair hFE = 50 @ 5 A/5 V) hFE

Current Gain Bandwidth Product

(IC = 1 Adc, VCE = 10 Vdc, f

Output Capacitance

(VCB = 10 Vdc, IE = 0, f

BE(off)

= 1.5 Vdc)

LOAD

test

= 1 MHz)

test

= 1 MHz)

= 25°C unless otherwise noted)

C

= 100 W

RMShFE

unmatched

matched

Symbol Min Typ Max Unit

V

CEO(sus)

I

CEO

I

EBO

I

CEX

I

S/b

h

FE

V

BE(on)

V

CE(sat)

T

HD

f

T

C

ob

250 – – Vdc

– – 100 µAdc

– – 100 µAdc

– – 100 µAdc

4.0

2.25

20

8
– – 2.2 Vdc

–
–

–

–
4 – – MHz

– – 500 pF

–
–

–
–

–
–

0.8

0.08

–
–

60

–

1.4
4

–

–

Adc

Vdc

%

T

f, CURRENT GAIN BANDWIDTH PRODUCT (MHz)

6.5

6.0

5.5

5.0

4.5

4.0

3.5

3.0

VCE = 10 V

5 V

T

= 25°C

J

f

= 1 MHz

test

PNP MJW21193

1.0 100.1

IC COLLECTOR CURRENT (AMPS)

Figure 1. Typical Current Gain

Bandwidth Product

8.0

7.0

6.0

5.0

4.0

3.0

2.0

1.0

T

0

f, CURRENT GAIN BANDWIDTH PRODUCT (MHz)

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2

NPN MJW21194

T

= 25°C

J

f

= 1 MHz

test

1.0 100.1

IC COLLECTOR CURRENT (AMPS)

Figure 2. Typical Current Gain

Bandwidth Product

10 V

VCE = 5 V

1000

100

, DC CURRENT GAIN

FE

h

VCE = 20 V

MJW21193 (PNP) MJW21194 (NPN)

TYPICAL CHARACTERISTICS

PNP MJW21193 NPN MJW21194

1000

T

= 100°C

T

= 100°C

J

25°C

-25°C

100

, DC CURRENT GAIN

FE

h

VCE = 20 V

J

25°C

-25°C

1000

100

, DC CURRENT GAIN

FE

h

10

IC COLLECTOR CURRENT (AMPS)

100101.00.1

10

IC COLLECTOR CURRENT (AMPS)

100101.00.1

Figure 3. DC Current Gain, VCE = 20 V Figure 4. DC Current Gain, VCE = 20 V

PNP MJW21193

1000

T

= 100°C

J

25°C

100

-25°C

, DC CURRENT GAIN

FE

VCE = 5 V

10

IC COLLECTOR CURRENT (AMPS)

h

VCE = 20 V

100101.00.1

10

NPN MJW21194

T

= 100°C

J

25°C

-25°C

IC COLLECTOR CURRENT (AMPS)

100101.00.1

Figure 5. DC Current Gain, VCE = 5 V Figure 6. DC Current Gain, VCE = 5 V

, COLLECTOR CURRENT (A)

C

I

PNP MJW21193

30

1.5 A

5.0

25

20

15

10

0

0

5.0 10 15 20 25

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 7. Typical Output Characteristics

NPN MJW21194

35

IB = 2 A

1 A

0.5 A

T

= 25°C TJ = 25°C

J

, COLLECTOR CURRENT (A)

C

I

5.0

30

25

20

15

10

0

0

5.0 10 15 20 25

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

IB = 2 A

1.5 A

1 A

0.5 A

Figure 8. Typical Output Characteristics

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3

3.0

2.5

2.0

T

= 25°C

J

IC/IB = 10

MJW21193 (PNP) MJW21194 (NPN)

TYPICAL CHARACTERISTICS

PNP MJW21193 NPN MJW21194

1.4

T

= 25°C

J

1.2
IC/IB = 10

1.0

V

0.8

BE(sat)

SATURATION VOLTAGE (VOLTS)

1.0

, BASE-EMITTER VOLTAGE (VOLTS)

BE(on)

V

0.1

1.5

1.0

0.5

0

10

T

J

VCE = 20 V (SOLID)

V

BE(sat)

V

CE(sat)

IC, COLLECTOR CURRENT (AMPS)

Figure 9. Typical Saturation Voltages

PNP MJW21193 NPN MJW21194

= 25°C

VCE = 5 V (DASHED)

IC, COLLECTOR CURRENT (AMPS)

0.6

0.4

SATURATION VOLTAGE (VOLTS)

0.2

100101.00.1

0

IC, COLLECTOR CURRENT (AMPS)

V

CE(sat)

100101.00.1

Figure 10. Typical Saturation Voltages

10

T

= 25°C

J

VCE = 20 V (SOLID)

1.0

, BASE-EMITTER VOLTAGE (VOLTS)

BE(on)

V

100101.00.1

0.1

IC, COLLECTOR CURRENT (AMPS)

VCE = 5 V (DASHED)

100101.00.1

Figure 11. Typical Base–Emitter Voltage

PNP MJW21193 NPN MJW21194

100

10 mSec

10

1 Sec

1.0

, COLLECTOR CURRENT (AMPS)

C

I

0.1

VCE, COLLECTOR EMITTER (VOLTS)

100

Figure 13. Active Region Safe Operating Area

100 mSec

1000101.0

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100

10

1.0

, COLLECTOR CURRENT (AMPS)

C

I

0.1

Figure 14. Active Region Safe Operating Area

4

Figure 12. Typical Base–Emitter Voltage

10 mSec

1 Sec

VCE, COLLECTOR EMITTER (VOLTS)

100 mSec

100

1000101.0

MJW21193 (PNP) MJW21194 (NPN)

There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC – V

CE

limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.

10000

T

= 25°C

1000

C, CAPACITANCE (pF)

100

C

f

= 1 MHz)

(test)

VR, REVERSE VOLTAGE (VOLTS)

Figure 15. MJW21193 Typical Capacitance

C

ib

C

ob

The data of Figure 13 is based on T

= 150°C; TC is

J(pk)

variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power than
can be handled to values less than the limitations imposed by
second breakdown.

10000

T

= 25°C

C

1000

C, CAPACITANCE (pF)

f

= 1 MHz)

(test)

100101.00.1

100

VR, REVERSE VOLTAGE (VOLTS)

Figure 16. MJW21194 Typical Capacitance

C

ib

C

ob

100101.00.1

1.2

1.1

1.0

0.9

, TOTAL HARMONIC

DISTORTION (%)

0.8

HD

T

0.7

0.6
10000010000100010010

FREQUENCY (Hz)

Figure 17. Typical Total Harmonic Distortion

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5

MJW21193 (PNP) MJW21194 (NPN)

AUDIO PRECISION
MODEL ONE PLUS
TOTAL HARMONIC

DISTORTION

ANALYZER

SOURCE

AMPLIFIER

50 Ω

+50 V

DUT

0.5 Ω

DUT

-50 V

Figure 18. Total Harmonic Distortion Test Circuit

0.5 Ω

8.0 Ω

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6

MJW21193 (PNP) MJW21194 (NPN)

PACKAGE DIMENSIONS

TO–247

CASE 340K–01

ISSUE C

0.25 (0.010)MTB

A

K

0.25 (0.010)MYQ

–Q–

M

P

F

U

D

S

–B–

123

G

–T–

E

C

4

L

R

–Y–

V

H

J

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

DIM MIN MAX MIN MAX

A 19.7 20.3 0.776 0.799
B 15.3 15.9 0.602 0.626
C 4.7 5.3 0.185 0.209
D 1.0 1.4 0.039 0.055
E 1.27 REF 0.050 REF
F 2.0 2.4 0.079 0.094

G 5.5 BSC 0.216 BSC

H 2.2 2.6 0.087 0.102
J 0.4 0.8 0.016 0.031
K 14.2 14.8 0.559 0.583
L 5.5 NOM 0.217 NOM
P 3.7 4.3 0.146 0.169

Q 3.55 3.65 0.140 0.144

R 5.0 NOM 0.197 NOM
U 5.5 BSC 0.217 BSC
V 3.0 3.4 0.118 0.134

STYLE 3:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

INCHESMILLIMETERS

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MJW21193 (PNP) MJW21194 (NPN)

PowerBase is a trademark of Semiconductor Components Industries, LLC.

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

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MJW21193/D

8