ON Semiconductor MJW21193, MJW21193G, MJW21194, MJW21194G Service Manual

MJW21193 (PNP)
MJW21194 (NPN)

Preferred Devices

Silicon Power Transistors

The MJW21193 and MJW21194 utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.

Features

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•Total Harmonic Distortion Characterized

•High DC Current Gain -

= 20 Min @ IC = 8 Adc

h

FE

•Excellent Gain Linearity

•High SOA: 2.25 A, 80 V, 1 Second

•Pb-Free Packages are Available

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector-Emitter Voltage V

Collector-Base Voltage V

Emitter-Base Voltage V

Collector-Emitter Voltage - 1.5 V V

Collector Current - Continuous

Collector Current - Peak (Note 1)

Base Current - Continuous I

Total Power Dissipation @ TC = 25°C

Derate Above 25°C

Operating and Storage Junction

Temperature Range

CEO

CBO

EBO

CEX

I

P

TJ, T

C

B

D

stg

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance,

Junction-to-Case

Thermal Resistance,

Junction-to-Ambient

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

R

θ

JC

R

θ

JA

250 Vdc

400 Vdc

5.0 Vdc

400 Vdc

16
30

5.0 Adc

200

1.43

- āā 65 to
+150

0.7 °C/W

40 °C/W

Adc

W

W/°C

°C

16 AMPERES

COMPLEMENTARY SILICON

POWER TRANSISTORS
250 VOLTS, 200 WATTS

TO-247

CASE 340L

STYLE 3

1

2

3

MARKING DIAGRAM

MJW2119x
AYWWG

1 BASE

2 COLLECTOR

x = 3 or 4
A = Assembly Location
Y = Year
WW = Work Week
G = Pb-Free Package

ORDERING INFORMATION

Device Package Shipping

3 EMITTER

© Semiconductor Components Industries, LLC, 2007

June, 2007 - Rev. 3

MJW21193 TO-247 30 Units/Rail

MJW21193G TO-247

(Pb-Free)

MJW21194 TO-247 30 Units/Rail

MJW21194G TO-247

(Pb-Free)

1 Publication Order Number:

30 Units/Rail

30 Units/Rail

MJW21193/D

MJW21193 (PNP) MJW21194 (NPN)

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Collector-Emitter Sustaining Voltage

(I

= 100 mAdc, IB = 0)

C

Collector Cutoff Current

= 200 Vdc, IB = 0)

(V

CE

Emitter Cutoff Current

(V

= 5 Vdc, IC = 0)

CE

Collector Cutoff Current

(V

= 250 Vdc, V

CE

BE(off)

= 1.5 Vdc)

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

(V

= 50 Vdc, t = 1 s (non-repetitive)

CE

= 80 Vdc, t = 1 s (non-repetitive)

(V

CE

ON CHARACTERISTICS

DC Current Gain

(I

= 8 Adc, VCE = 5 Vdc)

C

= 16 Adc, IB = 5 Adc)

(I

C

Base-Emitter On Voltage

(I

= 8 Adc, VCE = 5 Vdc)

C

Collector-Emitter Saturation Voltage

(I

= 8 Adc, IB = 0.8 Adc)

C

= 16 Adc, IB = 3.2 Adc)

(I

C

DYNAMIC CHARACTERISTICS

Total Harmonic Distortion at the Output
V

= 28.3 V, f = 1 kHz, P

RMS

LOAD

= 100 W

RMS

h

FE

unmatched

(Matched pair h

= 50 @ 5 A/5 V) hFE

FE

matched

Current Gain Bandwidth Product

(I

= 1 Adc, VCE = 10 Vdc, f

C

= 1 MHz)

test

Output Capacitance

(V

= 10 Vdc, IE = 0, f

CB

= 1 MHz)

test

Symbol Min Typ Max Unit

V

CEO(sus)

I

CEO

I

EBO

I

CEX

I

S/b

h

FE

V

BE(on)

V

CE(sat)

T

HD

f

C

T

ob

250 - - Vdc

- - 100 μAdc

- - 100 μAdc

- - 100 μAdc

4.0

2.25

20

8

-

-

-

-

-

-

80

-

- - 2.2 Vdc

-

-

-

-

-

-

0.8

0.08

1.4
4

-

-

4 - - MHz

- - 500 pF

Adc

Vdc

%

T

f, CURRENT GAIN BANDWIDTH PRODUCT (MHz)

6.5

6.0

5.5

5.0

4.5

4.0

3.5

3.0

VCE = 10 V

5 V

TJ = 25°C
f

= 1 MHz

test

PNP MJW21193

1.0 100.1

IC COLLECTOR CURRENT (AMPS)

Figure 1. Typical Current Gain

Bandwidth Product

8.0

7.0

6.0

5.0

4.0

3.0

2.0

1.0

T

0

f, CURRENT GAIN BANDWIDTH PRODUCT (MHz)

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2

NPN MJW21194

TJ = 25°C
f

= 1 MHz

test

1.0 100.1

IC COLLECTOR CURRENT (AMPS)

Figure 2. Typical Current Gain

Bandwidth Product

10 V

VCE = 5 V

1000

MJW21193 (PNP) MJW21194 (NPN)

TYPICAL CHARACTERISTICS

PNP MJW21193 NPN MJW21194

1000

100

, DC CURRENT GAIN

FE

h

1000

100

, DC CURRENT GAIN

FE

h

10

TJ = 100°C

25°C

-25 °C

VCE = 20 V

TJ = 100°C

25°C

-25 °C

IC COLLECTOR CURRENT (AMPS)

100

, DC CURRENT GAIN

FE

h

VCE = 20 V

100101.00.1

10

I

COLLECTOR CURRENT (AMPS)

C

Figure 3. DC Current Gain, VCE = 20 V Figure 4. DC Current Gain, VCE = 20 V

VCE = 5 V

PNP MJW21193

TJ = 100°C

25°C

-25 °C

1000

100

, DC CURRENT GAIN

FE

h

VCE = 20 V

NPN MJW21194

TJ = 100°C

25°C

-25 °C

100101.00.1

, COLLECTOR CURRENT (A)

C

I

10

COLLECTOR CURRENT (AMPS)

I

C

Figure 5. DC Current Gain, V

PNP MJW21193

30

1.5 A

5.0

25

20

15

10

0

0

5.0 10 15 20 25
, COLLECTOR-EMITTER VOLTAGE (VOLTS)

V

CE

Figure 7. Typical Output Characteristics

100101.00.1

= 5 V Figure 6. DC Current Gain, VCE = 5 V

CE

10

IC COLLECTOR CURRENT (AMPS)

NPN MJW21194

35

IB = 2 A

1 A

0.5 A

TJ = 25°C TJ = 25°C

, COLLECTOR CURRENT (A)

C

I

5.0

30

25

20

15

10

0

0

5.0 10 15 20 25
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

IB = 2 A

1.5 A

1 A

0.5 A

Figure 8. Typical Output Characteristics

100101.00.1

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3

3.0

2.5

2.0

TJ = 25°C
I

= 10

C/IB

MJW21193 (PNP) MJW21194 (NPN)

TYPICAL CHARACTERISTICS

PNP MJW21193 NPN MJW21194

1.4

TJ = 25°C

1.2
I

= 10

C/IB

1.0

V

0.8

BE(sat)

SATURATION VOLTAGE (VOLTS)

1.0

, BASE-EMITTER VOLTAGE (VOLTS)

BE(on)

V

0.1

1.5

1.0

0.5

0

10

TJ = 25°C

VCE = 20 V (SOLID)

V

BE(sat)

V

CE(sat)

IC, COLLECTOR CURRENT (AMPS)

Figure 9. Typical Saturation Voltages

PNP MJW21193 NPN MJW21194

VCE = 5 V (DASHED)

IC, COLLECTOR CURRENT (AMPS)

0.6

0.4

SATURATION VOLTAGE (VOLTS)

0.2

100101.00.1

0

IC, COLLECTOR CURRENT (AMPS)

V

CE(sat)

100101.00.1

Figure 10. Typical Saturation Voltages

10

TJ = 25°C

VCE = 20 V (SOLID)

1.0

, BASE-EMITTER VOLTAGE (VOLTS)

BE(on)

V

100101.00.1

0.1

IC, COLLECTOR CURRENT (AMPS)

VCE = 5 V (DASHED)

100101.00.1

Figure 11. Typical Base-Emitter Voltage

PNP MJW21193 NPN MJW21194

100

10 mSec

10

1 Sec

1.0

, COLLECTOR CURRENT (AMPS)

C

I

0.1

VCE, COLLECTOR EMITTER (VOLTS)

100

Figure 13. Active Region Safe Operating Area

100 mSec

1000101.0

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100

10

1.0

, COLLECTOR CURRENT (AMPS)

C

I

0.1

Figure 14. Active Region Safe Operating Area

4

Figure 12. Typical Base-Emitter Voltage

10 mSec

1 Sec

VCE, COLLECTOR EMITTER (VOLTS)

100 mSec

100

1000101.0

MJW21193 (PNP) MJW21194 (NPN)

There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate I

- V

C

CE

limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.

10000

1000

C, CAPACITANCE (pF)

100

TC = 25°C

f

= 1 MHz)

(test)

VR, REVERSE VOLTAGE (VOLTS)

Figure 15. MJW21193 Typical Capacitance

C

ib

C

ob

The data of Figure 13 is based on T

= 150°C; TC is

J(pk)

variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power than
can be handled to values less than the limitations imposed by
second breakdown.

10000

TC = 25°C

1000

C, CAPACITANCE (pF)

f

= 1 MHz)

100101.00.1

100

(test)

VR, REVERSE VOLTAGE (VOLTS)

Figure 16. MJW21194 Typical Capacitance

C

ib

C

ob

100101.00.1

1.2

1.1

1.0

0.9

, TOTAL HARMONIC

DISTORTION (%)

0.8

HD

T

0.7

0.6
10000010000100010010

FREQUENCY (Hz)

Figure 17. Typical Total Harmonic Distortion

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MJW21193 (PNP) MJW21194 (NPN)

AUDIO PRECISION
MODEL ONE PLUS
TOTAL HARMONIC

DISTORTION

ANALYZER

SOURCE

AMPLIFIER

50 Ω

+50 V

DUT

0.5 Ω

DUT

-50 V

Figure 18. Total Harmonic Distortion Test Circuit

0.5 Ω

8.0 Ω

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MJW21193 (PNP) MJW21194 (NPN)

PACKAGE DIMENSIONS

TO-247

CASE 340L-02

ISSUE D

-T-

-B-

U

N

A

123

C

E

L

4

-Q-

0.63 (0.025)MTB

P

-Y-

K

F

2 PL

G

W

3 PL

D

0.25 (0.010)MYQ

J

H

S

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

DIM MIN MAX MIN MAX

A 20.32 21.08 0.800 8.30
B 15.75 16.26 0.620 0.640
C 4.70 5.30 0.185 0.209
D 1.00 1.40 0.040 0.055

M

E 2.20 2.60 0.087 0.102
F 1.65 2.13 0.065 0.084
G 5.45 BSC 0.215 BSC
H 1.50 2.49 0.059 0.098
J 0.40 0.80 0.016 0.031
K 20.06 20.83 0.790 0.820
L 5.40 6.20 0.212 0.244
N 4.32 5.49 0.170 0.216
P --- 4.50 --- 0.177
Q 3.55 3.65 0.140 0.144
U 6.15 BSC 0.242 BSC
W 2.87 3.12 0.113 0.123

STYLE 3:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

INCHESMILLIMETERS

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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MJW21193/D

7