ON Semiconductor MJW21191, MJW21191G, MJW21192, MJW21192G Service Manual

MJW21192 (NPN),
MJW21191 (PNP)

Complementary Silicon
Plastic Power Transistors

Specifically designed for power audio output, or high power drivers

in audio amplifiers.

• DC Current Gain Specified up to 8.0 A at Temperature

• All On Characteristics at Temperature

• High SOA: 20 A, 18 V, 100 ms

• TO−247AE Package

• Pb−Free Packages are Available*

MAXIMUM RATINGS

MJW21191

CEO

CB
EB

I

C

B

P

q

q

D

stg

JC
JA

MJW21192

150 Vdc
150 Vdc

5.0 Vdc

8.0
16

2.0 Adc

125

0.65

–65 to

+150

1.0
50

Unit

Adc

W

W/_C

_C

_C/W
_C/W

Rating Symbol

Collector−Emitter Voltage V
Collector−Base Voltage V
Emitter−Base Voltage V
Collector Current − Continuous

Base Current I
Total Power Dissipation @ TC = 25_C

Derate above 25_C

Operating and Storage Junction

Temperature Range

− Peak

TJ, T

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

1000

PNP

NPN

100

R
R

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8.0 A

POWER TRANSISTORS

COMPLEMENTARY SILICON

150 V, 125 W

TO−247

CASE 340L

STYLE 3

1

2

3

MARKING DIAGRAM

MJW2119x
AYWWG

1 BASE

2 COLLECTOR

x = 1 or 2
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package

ORDERING INFORMATION

3 EMITTER

10

C, CAPACITANCE (pF)

1.0

1.0

10 100 1000

VR, REVERSE VOLTAGE (V)

Figure 1. Typical Capacitance @ 25°C

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2005

June, 2005 − Rev. 2

1 Publication Order Number:

Device Package Shipping

MJW21191 TO−247 30 Units/Rail
MJW21191G TO−247

(Pb−Free)
MJW21192 TO−247 30 Units/Rail
MJW21192G TO−247

(Pb−Free)

30 Units/Rail

30 Units/Rail

MJW21192/D

MJW21192 (NPN), MJW21191 (PNP)

ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted)

C

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 1)

(IC = 10 mAdc, IB = 0)

Collector Cutoff Current

(VCB = 250 Vdc, IE = 0)

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 4.0 Adc, VCE = 2.0 Vdc)
(IC = 8.0 Adc, VCE = 2.0 Vdc)

Collector−Emitter Saturation Voltage

(IC = 4.0 Adc, IB = 0.4 Adc)
(IC = 8.0 Adc, IB = 1.6 Adc)

Base−Emitter On Voltage

(IC = 4.0 Adc, VCE = 2.0 Vdc)

DYNAMIC CHARACTERISTICS

Current Gain − Bandwidth Product (Note 2)

(IC = 1.0 Adc, VCE = 10 Vdc, f

= 1.0 MHz)

test

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

2. fT = ⎪hfe⎪• f

test

.

V

CEO(sus)

I

CES

I

EBO

h

V

CE(sat)

V

BE(on)

f

FE

Vdc

150 −

mAdc

− 10
mAdc

− 10

−

15

5.0

100

−
Vdc

−

−

1.0

2.0

− 2.0 Vdc

T

4.0 − MHz

1.0

D = 0.5

0.2

0.1

0.1

0.05

TRANSIENT THERMAL

RESISTANCE (NORMALIZED)

0.02

0.01

0.01

0.00001 0.0001 0.001 0.01 0.1 1.0 10

Figure 2. Thermal Response

There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − V

CE

limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation then the curves indicate.

DUTY
CYCLE,
D = t1/t

P

(pk)

t

1

t

2

Z

= r(t) R

θ

JC(t)

R

θ

JC

θ

JC

= 1.65°C/W MAX

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T

− TC = P

J(pk)

(pk)

1

Z

θ

JC(t)

100 1000

t, TIME (s)

The data of Figures 3 and 4 is based on T

J(pk)

= 150_C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided T
< 150_C. T

may be calculated from the data in

J(pk)

Figure 2. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.

2

J(pk)

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2

MJW21192 (NPN), MJW21191 (PNP)

NPN — MJW21192 PNP — MJW21191

100

10

1.0

, COLLECTOR CURRENT (AMPS)

C

I

0.1

100 ms

1.0

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

10 1000

10ms

250ms

Figure 3. NPN — MJW21192

100

100

10

1.0

, COLLECTOR CURRENT (AMPS)

C

I

0.1

1.0

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 4. PNP — MJW21191

Safe Operating Area

TYPICAL CHARACTERISTICS

NPN — MJW21192 PNP — MJW21191

1000

1000

10 ms

100 ms

250 ms

10

Safe Operating Area

100

1000

100

, DC CURRENT GAIN

FE

h

1.0

100°C

25°C

10

0.01

50°C

0.1 10

IC, COLLECTOR CURRENT (AMPS)

1.0

100

100°C

100

25°C

, DC CURRENT GAIN

10

FE

h

1.0

0.01 1.0 100

Figure 5. NPN — MJW21192

V

= 2.0 V DC Current Gain

CE

50°C

0.1 10

IC, COLLECTOR CURRENT (AMPS)

Figure 6. PNP — MJW21191
V

= 2.0 V DC Current Gain

CE

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3

MJW21192 (NPN), MJW21191 (PNP)

NPN — MJW21192 PNP — MJW21191

1000

50°C

100°C

100

25°C

, DC CURRENT GAIN

10

FE

h

1.0

0.01 1.0 100

0.1 10

IC, COLLECTOR CURRENT (AMPS)

Figure 7. NPN — MJW21192

V

= 5.0 V DC Current Gain

CE

1.0

100°C

0.1

25°C

1000

50°C

100°C

100

25°C

10

FE

h , DC CURRENT GAIN

1.0

0.01 1.0 100

0.1 10

IC, COLLECTOR CURRENT (AMPS)

Figure 8. PNP — MJW21191

V

= 5.0 V DC Current Gain

CE

1.0

0.1

V, VOLTAGE (VOLTS)

0.01

V, VOLTAGE (VOLTS)

0.01

1.0

0.1

0.1

0.1

IC, COLLECTOR CURRENT (AMPS)

Figure 9. NPN — MJW21192

V

CE(sat) IC/IB

IC, COLLECTOR CURRENT (AMPS)

= 5.0

Figure 11. NPN — MJW21192

V

CE(sat) IC/IB

= 10

100°C

25°C

V, VOLTAGE (VOLTS)

100°C

25°C

101.0

0.01

IC, COLLECTOR CURRENT (AMPS)

100.1 1.0

Figure 10. PNP — MJW21191

V

CE(sat) IC/IB

10

1.0

0.1

V, VOLTAGE (VOLTS)

100°C

25°C

101.0

0.01

0.1

IC, COLLECTOR CURRENT (AMPS)

= 5.0

101.0

Figure 12. PNP — MJW21191

SPACE

V

CE(sat) IC/IB

= 10

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4

MJW21192 (NPN), MJW21191 (PNP)

CE

BE(on)

CE

BE(on)

NPN — MJW21192 PNP — MJW21191

V, VOLTAGE (VOLTS)

1.0

0.1

10

50°C

25°C

100°C

0.01 0.1

IC, COLLECTOR CURRENT (AMPS)

100.001 1.0

Figure 13. NPN — MJW21192

V

= 2.0 V V

Curve

V, VOLTAGE (VOLTS)

1.0

0.1

10

50°C

25°C

100°C

0.01 0.1

IC, COLLECTOR CURRENT (AMPS)

100.001 1.0

Figure 14. PNP — MJW21191

V

= 2.0 V V

Curve

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5

MJW21192 (NPN), MJW21191 (PNP)

PACKAGE DIMENSIONS

TO−247

CASE 340L−02

ISSUE D

−T−

−B−

U

N

A

123

C

E

L

4

−Q−

0.63 (0.025)MTB

P

−Y−

K

F

2 PL

G

W

D

3 PL

0.25 (0.010)MYQ

J

H

S

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

DIM MIN MAX MIN MAX

A 20.32 21.08 0.800 8.30
B 15.75 16.26 0.620 0.640
C 4.70 5.30 0.185 0.209
D 1.00 1.40 0.040 0.055

M

E 2.20 2.60 0.087 0.102
F 1.65 2.13 0.065 0.084
G 5.45 BSC 0.215 BSC
H 1.50 2.49 0.059 0.098
J 0.40 0.80 0.016 0.031
K 20.06 20.83 0.790 0.820
L 5.40 6.20 0.212 0.244
N 4.32 5.49 0.170 0.216
P −−− 4.50 −−− 0.177
Q 3.55 3.65 0.140 0.144
U 6.15 BSC 0.242 BSC
W 2.87 3.12 0.113 0.123

STYLE 3:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

INCHESMILLIMETERS

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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MJW21192/D

6