ON Semiconductor MJW18020 Technical data

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MJW18020

Preferred Devices

NPN Silicon Power
Transistors High Voltage
Planar

The MJW18020 planar High Voltage Power Transistor is
specifically Designed for motor control applications, high power
supplies and UPS’s for which the high reproducibility of DC and
Switching parameters minimizes the dead time in bridge
configurations.

Mains features include:

• High and Excellent Gain Linearity

• Fast and Very Tight Switching Times Parameters t

• Very Stable Leakage Current due to the Planar Structure

• High Reliability

and t

si

fi

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30 AMPERES

1000 VOLTS BV

450 VOLTS BV

250 WATTS

CES

CEO

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Sustaining Voltage V
Collector–Base Breakdown Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current – Continuous

Base Current – Continuous

Total Power Dissipation @ TC = 25C

Derate Above 25C

Operating and Storage Junction

Temperature Range

– Peak (Note 1.)

– Peak (Note 1.)

TJ, T

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance,

Junction–to–Case

Thermal Resistance,

Junction–to–Ambient

Maximum Lead Temperature for Soldering
Purposes: 1/8” from Case for 5 Seconds

1. Pulse Test: Pulse Width = 5 s, Duty Cycle ≤ 10%.

R

R

CEO
CES
CBO
EBO

I

C

I

B

P

θ

θ

T

D

JC

JA

L

stg

450 Vdc
1000 Vdc
1000 Vdc

9.0 Vdc
30

45

6.0
10

250

2.0

–65 to

+150

0.5 C/W

50 C/W

275 C

Adc

Adc

Watts
W/C

C

1

2

3

TO–247

CASE 340K

STYLE 3

MARKING DIAGRAM

MJW
18020
LLYWW

1 BASE

2 COLLECTOR

MJW18020= Device Code
LL = Location Code
Y = Year
WW = Work Week

3 EMITTER

ORDERING INFORMATION

Device Package Shipping

MJW18020 TO–247

30 Units/Rail

 Semiconductor Components Industries, LLC, 2002

January , 2002 – Rev. 0

Preferred devices are recommended choices for future use

and best overall value.

1 Publication Order Number:

MJW180203/D

MJW18020

(

C

,

B1 B2

,

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

C

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage

= 100 mAdc, IB = 0)

(I

C

Collector Cutoff Current

(V

CE

= Rated V

CEO

, IB = 0)

Collector Cutoff Current (VCE = Rated V

Emitter Cutoff Current

= 9 Vdc, IC = 0)

(V

CE

, VEB = 0)

CES

(T

C

= 125°C)

V

CEO(sus)

I

CEO

I

CES

I

EBO

ON CHARACTERISTICS

DC Current Gain (I

= 3 Adc, VCE = 5 Vdc)

C

= 10 Adc VCE = 2 Vdc)

(I

C

(I

= 20 Adc VCE = 2 Vdc)

C

(I

= 10 mAdc VCE = 5 Vdc)

C

Base–Emitter Saturation Voltage (IC = 10 Adc, IB = 2 Adc)

(I

= 20 Adc, IB = 4 Adc)

C

Collector–Emitter Saturation Voltage

= 10 Adc, IB = 2 Adc)

(I

C

(I

= 20 Adc, IB = 4 Adc)

C

(T

= 125°C)

C

= 125°C)

(T

C

= 125°C)

(T

C

= 125°C)

(T

C

= 125°C)

(T

C

h

V

BE(sat)

V

CE(sat)

FE

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth Product

(I

= 1 Adc, VCE = 10 Vdc, f

C

test

Output Capacitance

= 10 Vdc, IE = 0, f

(V

CB

= 1 MHz)

test

Input Capacitance

(V

= 8.0)

EB

= 1 MHz)

f

T

C

ob

C

ib

SWITCHING CHARACTERISTICS: Resistive Load (D.C. = 10%, Pulse Width = 70 µs)
Turn–On Time

Storage Time t
Fall Time t
Turn–Off Time t
Turn–On Time
Storage Time
Fall Time t
Turn–Off Time t
SWITCHING CHARACTERISTICS: Inductive Load (V

Fall Time
Storage Time
Crossover Time
Fall Time
Storage Time
Crossover Time

(IC = 10 Adc, IB1 = IB2 = 2 Adc,

Vcc = 125 V)

(IC= 20 Adc, IB1 = IB2 = 4 Adc,

Vcc = 125 V)

= 300 V , Vcc = 15 V, L = 200 µH)

clamp

(IC = 10 Adc, IB1 = IB2 = 2 Adc)

(IC = 20 Adc, IB1 = IB2 = 4 Adc)

t

On

s

f

Off

t

On

t

s

f

Off

t

fi

t

si

t

c

t

fi

t

si

t

c

450 – – Vdc

– – 100 µAdc

– – 100

µAdc

500

– – 100 µAdc

14

–
8
5

5.5
4

14

– 0.97

1.15

30
16
14

9
7

25

34

–

–
–
–
–

1.25

1.5

Vdc

Vdc
–
–
–
–

0.2

0.3

0.5

0.9

0.6
–

1.5

2.0

– 13 – MHz

– 300 500 pF

– 7000 9000 pF

– 540 750 ns

– 4.75 6 µs
– 380 500 ns
– 5.2 6.5 µs
– 965 1200 ns
– 2.9 3.5 µs
– 350 500 ns
– 3.25 4 µs

– 142 250 ns
– 4.75 6 µs
– 320 500 ns
– 350 500 ns
– 3.0 3.5 µs
– 500 750 ns

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2

MJW18020

0

0

TYPICAL CHARACTERISTICS

100

TJ = 125°C

TJ = –20°C

10

, DC CURRENT GAIN
H

VCE = 2.0 V VCE = 5.0 V

FE

1.0

0.01 0.1 1.0 10
I

, COLLECTOR CURRENT (A)

C

TJ = 25°C

Figure 1. DC Current Gain, VCE = 2.0 V

100.0

10.0

1.0
TJ = –20°C

, VOLTAGE (VOLTS)

0.1

CE

V

0.0

0.001 0.01 0.1 1.0 10 100

TJ = 125°C

I

, COLLECTOR CURRENT (A)

C

TJ = 25°C

100

100

TJ = 125°C

TJ = –20°C

10

, DC CURRENT GAIN

FE

H

1.0

0.01 0.1 1.0 10
IC, COLLECTOR CURRENT (A)

TJ = 25°C

Figure 2. DC Current Gain, VCE = 5.0 V

100.0
Ic/Ib = 10Ic/Ib = 5.0

10.0

1.0

, VOLTAGE (VOLTS)

0.1

CE

V

0.0

0.001 0.01 0.1 1.0 10 10

TJ = 125°C

IC, COLLECTOR CURRENT (A)

TJ = –20°C

TJ = 25°C

100

Figure 3. Typical Collector–Emitter Saturation

Voltage, I

10.0

TJ = –20°C

TJ = 25°C

1.0

, VOLTAGE (VOLTS)

BE

V

0.1

0.001 0.01 0.1 1.0 10 100

TJ = 125°C

IC, COLLECTOR CURRENT (A)

C/IB

= 5.0

Figure 5. Typical Base–Emitter Saturation

Voltage, I

C/IB

= 5.0

10.0

1.0

, VOLTAGE (VOLTS)

BE

V

0.1

0.001 0.01 0.1 1.0 10 10

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3

Figure 4. Typical Collector–Emitter Saturation

Voltage, IC/IB = 10

Ic/Ib = 10Ic/Ib = 5.0

TJ = –20°C

TJ = 25°C

TJ = 125°C

IC, COLLECTOR CURRENT (A)

Figure 6. Typical Base–Emitter Saturation

Voltage, IC/IB = 10

MJW18020

TYPICAL CHARACTERISTICS

100000

10000

C, CAPACITANCE (pF)

C

ib

1000

C

ob

100

1 10 100

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 7. T ypical Capacitance

40

30

100.00

1.0 s

DC

10.00
5 ms

1.00

0.10

, COLLECTOR CURRENT (AMPS)

C

I

0.01
10 100 1000

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

1 ms

Extended SOA

10 s

Figure 8. Forward Bias Safe Operating Area

TC  125°C
I

> 4

c/Ib

= 500 H

L

C

20

–1.5 V

10

, COLLECTOR CURRENT (AMPS)

C

I

0

0 200 400 600 800 1000

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

VBE = 0 V

–5 V

Figure 9. Reverse Bias Safe Operating Area

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4

MJW18020

PACKAGE DIMENSIONS

TO–247

CASE 340K–01

ISSUE C

0.25 (0.010)MTB

A

K

0.25 (0.010)MYQ

–Q–

M

P

U

F

D

S

–B–

123

G

–T–

E

C

4

L

R

–Y–

V

H

J

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

DIM MIN MAX MIN MAX

A 19.7 20.3 0.776 0.799
B 15.3 15.9 0.602 0.626
C 4.7 5.3 0.185 0.209
D 1.0 1.4 0.039 0.055
E 1.27 REF 0.050 REF
F 2.0 2.4 0.079 0.094
G 5.5 BSC 0.216 BSC
H 2.2 2.6 0.087 0.102
J 0.4 0.8 0.016 0.031
K 14.2 14.8 0.559 0.583
L 5.5 NOM 0.217 NOM
P 3.7 4.3 0.146 0.169
Q 3.55 3.65 0.140 0.144
R 5.0 NOM 0.197 NOM
U 5.5 BSC 0.217 BSC
V 3.0 3.4 0.118 0.134

STYLE 3:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

INCHESMILLIMETERS

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5

Notes

MJW18020

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6

Notes

MJW18020

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7

MJW18020

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes

without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
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MJW18020/D

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