ON Semiconductor MJF6388, MJF6388G, MJF6668, MJF6668G Service Manual

MJF6388 (NPN), MJF6668 (PNP)

Preferred Device

Complementary Power Darlingtons

For Isolated Package Applications

Designed for general−purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis.

Features

• Isolated Overmold Package, TO−220 Type

• Electrically Similar to the Popular 2N6388, 2N6668, TIP102, and

TIP107

• 100 V

CEO(sus)

• 10 A Rated Collector Current

• No Isolating Washers Required

• Reduced System Cost

• High DC Current Gain − 1000 (Min) @ I

= 5.0 Adc

• High Isolation Voltage (up to 4500 VRMS)

• Case 221D is UL Recognized at 3500 VRMS: File #E69369

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

RMS Isolation Voltage (Note 1)

(t = 0.3 sec, R.H. ≤ 30%, TA = 25_C) Per Figure 14

Collector Current − Continuous

Base Current − Continuous

Total Power Dissipation (Note 3) @ TC = 25_C Derate above 25_C

Total Power Dissipation @ TA = 25_C Derate above 25_C

Operating and Storage Temperature Range

− Peak (Note 2)

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction−to−Case (Note 3)

Thermal Resistance, Junction−to−Ambient

Lead Temperature for Soldering Purposes

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

1. Proper strike and creepage distance must be provided.

2. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.

3. Measurement made with thermocouple contacting the bottom insulated

surface (in a location beneath the die), the devices mounted on a heatsink with thermal grease and a mounting torque of ≥ 6 in. lbs.

Symbol

CEO

ISOL

TJ, T

stg

Symbol

Value

100

5.0

4500

10 15

1.0

0.31

2.0

0.016

–65 to +150

Max

4.0

62.5

260

Unit

Vdc

Adc

W/_C

Unit

_C/W

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COMPLEMENTARY SILICON

POWER DARLINGTONS

10 AMPERES

100 VOLTS, 40 WATTS

NPN PNP

COLLECTOR 2

BASE

EMITTER 3

MJF6388 MJF6668

MARKING DIAGRAM

TO−220 FULLPACK

CASE 221D

MJF6xy8 = Specific Device Code

G=Pb−Free Package A = Assembly Location Y = Year WW = Work Week

STYLE 2

UL RECOGNIZED

x = 3 or 6 y = 6 or 8

ORDERING INFORMATION

Device Package Shipping

MJF6388 TO−220 FULLPACK

MJF6388G TO−220 FULLPACK

MJF6668 50 Units/Rail

MJF6668G 50 Units/Rail

*For additional information on our Pb−Free strategy

and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

(Pb−Free)

TO−220 FULLPACK

(Pb−Free)

COLLECTOR 2

BASE

EMITTER 3

MJF6xy8G

AYW W

50 Units/Rail

September, 2008 − Rev. 10

1 Publication Order Number:

MJF6388/D

MJF6388 (NPN), MJF6668 (PNP)

ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 4)

= 30 mAdc, IB = 0)

Collector Cutoff Current

= 80 Vdc, IB = 0)

Collector Cutoff Current (VCE = 100 Vdc, V

Collector Cutoff Current (V

= 100 Vdc, V

EB(off)

= 1.5 Vdc) = 1.5 Vdc, T

= 125_C)

Collector Cutoff Current

= 100 Vdc, IE = 0)

Emitter Cutoff Current

= 5.0 Vdc, IC = 0)

ON CHARACTERISTICS (Note 4)

DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc)

DC Current Gain (I DC Current Gain (I DC Current Gain (I

= 5.0 Adc, VCE = 3.0 Vdc)

= 8.0 Adc, VCE = 4.0 Vdc)

= 10 Adc, VCE = 3.0 Vdc)

Collector−Emitter Saturation Voltage (IC = 3.0 Adc, IB = 6.0 mAdc)

Collector−Emitter Saturation Voltage (I Collector−Emitter Saturation Voltage (I Collector−Emitter Saturation Voltage (I

= 5.0 Adc, IB = 0.01 Adc)

= 8.0 Adc, IB = 80 mAdc)

= 10 Adc, IB = 0.1 Adc)

Base−Emitter Saturation Voltage (IC = 5.0 Adc, IB = 0.01 Adc)

Base−Emitter Saturation Voltage (I

= 10 Adc, IB = 0.1 Adc)

Base−Emitter On Voltage

= 8.0 Adc, VCE = 4.0 Vdc)

DYNAMIC CHARACTERISTICS

Small−Signal Current Gain

= 1.0 Adc, VCE = 5.0 Vdc, f

= 1.0 MHz)

test

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) MJF6388

MJF6668

Insulation Capacitance

(Collector−to−External Heatsink)

Small−Signal Current Gain

= 1.0 Adc, VCE = 5.0 Vdc, f = 1.0 kHz)

4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

Symbol

CEO(sus)

CEO

CEX

CBO

EBO

CE(sat)

BE(sat)

BE(on)

|hfe|

c−hs

Min

100

−

3000 1000

200 100

−

1000

Max

−

3.0

2.0

15000

−

2.0

2.5

3.0

2.8

4.5

2.5

−

200 300

3.0 Typ

−

Unit

Vdc

mAdc

−

Vdc

−

BASE

NPN MJF6388

≈ 8 k ≈ 120

COLLECTOR

EMITTER

PNP MJF6668

COLLECTOR

BASE

≈ 8 k ≈ 120

EMITTER

Figure 1. Darlington Schematic

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MJF6388 (NPN), MJF6668 (PNP)

& RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

, MUST BE FAST RECOVERY TYPES, e.g.,

MUR110 USED ABOVE I MSD6100 USED BELOW I

APPROX.

+12 V

APPROX.

-8 V

≈ 100 mA

25 ms

-4 V

+ 30 V

TUT

≈120≈8 k

SCOPE

tr, tf ≤ 10 ns DUTY CYCLE = 1%

NPN MJF6388

7 5

0.7

t, TIME (s)μ

0.3

0.2

0.1

0.07

0.1 100.5 2 5

VCC = 30 V I

= 250

C/IB

= I

TJ = 25°C

0.2

, COLLECTOR CURRENT (AMPS)

FOR td AND tr, D1 IS DISCONNECTED AND V

= 0

FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.

Figure 2. Switching Times Test Circuit

PNP MJF6668

7 5

0.7

t, TIME (s)μ

0.5

0.3 t

0.2

0.3

0.2

0.1

0.1 0.7 100.5

Figure 3. Typical Switching Times

VCC = 30 V I

= 250

C/IB

= I

TJ = 25°C

IC, COLLECTOR CURRENT (AMPS)

5 3

0.5

0.3

0.2

0.1

, COLLECTOR CURRENT (AMPS)

0.05

0.03

0.02

TJ = 150°C

5 ms

CURRENT LIMIT SECONDARY BREAKDOWN LIMIT THERMAL LIMIT @ TC = 25°C (SINGLE PULSE)

23 50

5 10020

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 4. Maximum Forward Bias

Safe Operating Area

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100 ms

1ms

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