ON Semiconductor MJF15030, MJF15030G, MJF15031, MJF15031G Service Manual

MJF15030 (NPN), MJF15031 (PNP)

Complementary Power Transistors

For Isolated Package Applications

Designed for general−purpose amplifier and switching applications,

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where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis.

Features

• Electrically Similar to the Popular MJE15030 and MJE15031

• 150 V

CEO(sus)

COMPLEMENTARY SILICON

POWER TRANSISTORS

8 AMPERES

150 VOLTS, 36 WATTS

• 8 A Rated Collector Current

• No Isolating Washers Required

• Reduced System Cost

• High Current Gain−Bandwidth Product −

fT= 30 MHz (Min) @ I

= 500 mAdc

• UL Recognized, File #E69369, to 3500 V

RMS

Isolation

MARKING DIAGRAM

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

RMS Isolation Voltage (Note 1)

(t = 0.3 sec, R.H. ≤ 30%, TA = 25_C) Per Figure 11

Collector Current − Continuous

− Peak

Base Current

Total Power Dissipation (Note 2) @ TC = 25_C Derate above 25_C

Total Power Dissipation @ TA = 25_C Derate above 25_C

Operating and Storage Temperature Range

Symbol

CEO

ISOL

TJ, T

stg

Value

150

4500

0.016

2.0

0.016

–65 to +150

Unit

Vdc

RMS

Adc

W/_C

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction−to−Ambient

Thermal Resistance, Junction−to−Case (Note 2)

Lead Temperature for Soldering Purposes

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

1. Proper strike and creepage distance must be provided.

2. Measurement made with thermocouple contacting the bottom insulated surface (in a location beneath the die), the devices mounted on a heatsink with thermal grease and a mounting torque of ≥ 6 in. lbs.

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting

Techniques Reference Manual, SOLDERRM/D.

Symbol

Max

62.5

3.5

260

Unit

_C/W

Device Package Shipping

MJF15030 TO−220 FULLPACK

MJF15030G TO−220 FULLPACK

MJF15031 50 Units/Rail

MJF15031G 50 Units/Rail

TO−220 FULLPACK

MJF1503x = Specific Device Code

G=Pb−Free Package A = Assembly Location Y = Year WW = Work Week

CASE 221D

STYLE 2

x = 0 or 1

ORDERING INFORMATION

(Pb−Free)

TO−220 FULLPACK

(Pb−Free)

MJF1503xG

AYW W

50 Units/Rail

July, 2008 − Rev. 6

1 Publication Order Number:

MJF15030/D

MJF15030 (NPN), MJF15031 (PNP)

ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 3)

(IC = 10 mAdc, IB = 0)

Collector Cutoff Current

= 150 Vdc, IB = 0)

Collector Cutoff Current

(VCB = 150 Vdc, IE = 0)

Emitter Cutoff Current

(VBE = 5 Vdc, IC = 0)

ON CHARACTERISTICS (Note 3)

DC Current Gain (IC = 0.1 Adc, VCE = 2 Vdc)

(IC = 2 Adc, VCE = 2 Vdc) (IC = 3 Adc, VCE = 2 Vdc) (IC = 4 Adc, VCE = 2 Vdc)

DC Current Gain Linearity

(VCE from 2 V to 20 V, IC from 0.1 A to 3 A) (NPN to PNP)

Collector−Emitter Saturation Voltage

(IC = 1 Adc, IB = 0.1 Adc)

Base−Emitter On Voltage

(IC = 1 Adc, VCE = 2 Vdc)

DYNAMIC CHARACTERISTICS

Current Gain − Bandwidth Product (Note 4)

(IC = 500 mAdc, VCE = 10 Vdc, f

= 10 MHz)

test

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

4. fT = ⎪hfe⎪• f

test

Symbol

CEO(sus)

CEO

CBO

EBO

CE(sat)

BE(on)

Min

150

−

40 40 40 20

−

Typ

2 3

Max

−

0.5

−

Unit

Vdc

mAdc

−

Vdc

MHz

0.5

0.3

0.2

0.1

0.05

0.03

0.02

0.01

0.3

0.1 0.2 20 200 2K2

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

0.5 10 30 50 100 300 500 1K 3K 5K

SINGLE PULSE R

= r(t) R

JC(t)

J(pk)

- TC = P

(pk)

(t)

153 10K

t, TIME (ms)

Figure 1. Thermal Response

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