ON Semiconductor MJE15034, MJE15034G, MJE15035, MJE15035G Service Manual

MJE15034 NPN,
MJE15035 PNP

Preferred Device

Complementary Silicon
Plastic Power Transistors

TO−220, NPN & PNP Devices

Complementary silicon plastic power transistors are designed for

use as high−frequency drivers in audio amplifiers.

Features

• h

= 100 (Min) @ IC = 0.5 Adc

FE

= 10 (Min) @ IC = 2.0 Adc

• Collector−Emitter Sustaining Voltage −

V

CEO(sus)

• High Current Gain − Bandwidth Product

fT = 30 MHz (Min) @ IC = 500 mAdc

• TO−220AB Compact Package

• Epoxy meets UL 94 V−0 @ 0.125 in

• ESD Ratings: Machine Model: C

• Pb−Free Packages are Available*

= 350 Vdc (Min) − MJE15034, MJE15035

Human Body Model: 3B

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4.0 AMPERES

POWER TRANSISTORS

COMPLEMENTARY SILICON

350 VOLTS, 50 WATTS

4

TO−220AB

1

2

3

CASE 221A

STYLE 1

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage V
Collector−Base Voltage V
Emitter−Base Voltage V
Collector Current − Continuous

Base Current I
Total Power Dissipation @ TC = 25_C

Derate above 25_C

Total Power Dissipation @ TA = 25_C

Derate above 25_C

Operating and Storage Junction
Temperature Range

− Peak

TJ, T

CEO

CB
EB

I

C

B

P

P

D

D

stg

350 Vdc
350 Vdc

5.0 Vdc

4.0

8.0

1.0 Adc
50

0.40

2.0

0.016

– 65 to +150

Adc

W

W/_C

W

W/_C

_C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

R

q

JC

R

q

JA

2.5

62.5

_C/W
_C/W

MARKING DIAGRAM

MJE1503xG

AYWW

MJE1503x = Device Code

A = Location Code
Y = Year
WW = Work Week
G = Pb−Free Package

x = 4 or 5

ORDERING INFORMATION

Device Package Shipping

MJE15034 TO−220AB 50 Units / Rail
MJE15034G TO−220AB

(Pb−Free)

MJE15035 TO−220AB 50 Units / Rail
MJE15035G TO−220AB

(Pb−Free)

Preferred devices are recommended choices for future use
and best overall value.

50 Units / Rail

50 Units / Rail

© Semiconductor Components Industries, LLC, 2006

January, 2006 − Rev. 3

1 Publication Order Number:

MJE15034/D

MJE15034 NPN, MJE15035 PNP

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

10

0

ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 1) (IC = 10 mAdc, IB = 0)
Collector Cutoff Current (VCB = 350 Vdc, IE = 0)
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 0.1 Adc, VCE = 5.0 Vdc)

ООООООООООООООООООО

ООООООООООООООООООО

(IC = 0.5 Adc, VCE = 5.0 Vdc)
(IC = 1.0 Adc, VCE = 5.0 Vdc)
(IC = 2.0 Adc, VCE = 5.0 Vdc)

Collector−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.1 Adc)
Base−Emitter On Voltage (IC = 1.0 Adc, VCE = 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Current Gain − Bandwidth Product (Note 2)
(IC = 500 mAdc, VCE = 10 Vdc, f

ООООООООООООООООООО

= 1.0 MHz)

test

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

2. fT = ⎪hfe⎪• f

T

T

A

.

test

C

Symbol

V

CEO(sus)

I

CBO

I

EBO

h

FE

ÎÎÎ

ÎÎÎ

V

CE(sat)

V

BE(on)

f

T

ÎÎÎ

Min

350

−

−

100

ÎÎ

100

50

ÎÎ

10

−

−

30

ÎÎ

Max

−
10
10

−

Î

−

−

Î

−

0.5

1.0

−

Î

100mS

Unit

Vdc

mAdc
mAdc

−

ÎÎ

ÎÎ

Vdc
Vdc

MHz

ÎÎ

60

3.0

40

2.0

20

1.0

, POWER DISSIPATION (WATTS)

D

P

0

0

0

40 60 100 120 160

20

Figure 1. Power Derating

1.0

0.7
D = 0.5

0.5

0.3

0.2

0.1

0.07

0.05

r(t), TRANSIENT THERMAL

0.03

RESISTANCE (NORMALIZED)

0.02

0.01

0.2

0.1

0.05

0.02

0.01
SINGLE PULSE

0.01 0.05 1.0 2.0 5.0 10 20 50 500 1.0 k0.1 0.50.2

0.02

T

C

T

A

80 140

T, TEMPERATURE (°C)

1.0

0.1

, COLLECTOR CURRENT (AMPS)

C

I

0.01

1.0 10 100 100

Figure 2. Active Region Safe Operating Area

Z

= r(t) R

q

JC(t)

R

= 2.5°C/W MAX

q

JC

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T

− TC = P

J(pk)

t, TIME (ms)

Figure 3. Thermal Response

DC

VCE, COLLECTOR−EMITTER VOLTAGE (V)

P

q

(pk)

JC

1

Z

q

JC(t)

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

2

100 200

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2