ON Semiconductor MCR8M, MCR8N Technical data
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MCR8M, MCR8N
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
half–wave, silicon gate–controlled devices are needed.
• Blocking Voltage of 600 thru 800 Volts
• On–State Current Rating of 8 Amperes RMS at 80°C
• High Surge Current Capability — 80 Amperes
• Rugged, Economical TO220AB Package
• Glass Passivated Junctions for Reliability and Uniformity
• Minimum and Maximum Values of IGT, VGT and IH Specified for
Ease of Design
• High Immunity to dv/dt — 100 V/µsec Minimum at 125°C
• Device Marking: Logo, Device Type, e.g., MCR8N, Date Code
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SCRs
8 AMPERES RMS
600 thru 800 VOLTS
G
A
K
MAXIMUM RATINGS (T
Rating
Peak Repetitive Off–State V oltage
(TJ = –40 to 125°C, Sine Wave,
50 to 60 Hz,
On-State RMS Current
(180° Conduction Angles; TC = 80°C)
Peak Non-Repetitive Surge Current
(One Full Cycle, 60 Hz, TC = 125°C)
Circuit Fusing Consideration
(t = 8.33 ms)
Forward Peak Gate Power
(Pulse Width ≤ 1.0 µs, TC = 80°C)
Forward Average Gate Power
(t = 8.3 ms, TC = 80°C)
Forward Peak Gate Current
(Pulse Width ≤ 1.0 µs, TC = 80°C)
Operating Junction Temperature Range T
Storage Temperature Range T
(1) V
DRM
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage
ratings of the devices are exceeded.
Gate Open) MCR8M
and V
RRM
= 25°C unless otherwise noted)
J
Symbol Value Unit
(1)
MCR8N
for all types can be applied on a continuous basis. Ratings
V
DRM,
V
RRM
I
T(RMS)
I
TSM
I2t 26.5 A2sec
P
GM
P
G(AV)
I
GM
J
stg
600
800
8.0 Amps
80 Amps
5.0 Watts
0.5 Watt
2.0 Amps
–40 to 125 °C
–40 to 150 °C
Volts
4
1
2
3
TO–220AB
CASE 221A
STYLE 3
PIN ASSIGNMENT
1
2
3
4
Cathode
Anode
Gate
Anode
ORDERING INFORMATION
Device Package Shipping
MCR8M TO220AB 50 Units/Rail
MCR8N TO220AB 50 Units/Rail
Semiconductor Components Industries, LLC, 1999
March, 2000 – Rev . 3
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
MCR8/D
MCR8M, MCR8N
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance — Junction to Case
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds T
ELECTRICAL CHARACTERISTICS (T
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VD = Rated V
ON CHARACTERISTICS
Peak Forward On–State Voltage* (ITM = 16 A) V
Gate Trigger Current (Continuous dc)
(VD = 12 V; RL = 100 Ω)
Holding Current
(VD = 12 V, Gate Open, Initiating Current = 200 mA)
Latch Current
(VD = 12 V, IG = 15 mA)
Gate Trigger Voltage (Continuous dc)
(VD = 12 V; 100 Ω)T
Gate Non–Trigger V oltage
(VD = 12 V; RL = 100 Ω)T
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off–State Voltage
(VD = Rated V
Critical Rate of Rise of On–State Current
IPK = 50 A, Pw = 40 µsec, diG/dt = 1 A/µsec, Igt = 50 mA
*Indicates Pulse Test: Pulse Width v2.0 ms, Duty Cycle v2%.
— Junction to Ambient
= 25°C unless otherwise noted)
J
Characteristic
and V
DRM
, Exponential Waveform, Gate Open, TJ = 125°C)
DRM
; Gate Open) TJ = 25°C
RRM
TJ = 125°C
= 25°C
J
= 125°C
J
Symbol Min Typ Max Unit
I
,
DRM
I
RRM
TM
I
GT
I
H
I
L
V
GT
V
GD
dv/dt 100 250 — V/µs
di/dt — — 50 A/µs
R
θJC
R
θJA
L
—
—
— — 1.8 Volts
2.0 7.0 15 mA
4.0 17 30 mA
6.0 20 40 mA
0.5 0.65 1.0 Volts
0.2 — — Volts
2.2
62.5
260 °C
—
—
0.01
2.0
°C/W
mA
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2
MCR8M, MCR8N
Voltage Current Characteristic of SCR
+ Current
Anode +
Symbol Parameter
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
125
120
°
115
110
105
100
, CASE TEMPERATURE ( C)
C
95
T
90
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
123 12
I
, RMS ON–STATE CURRENT (AMPS)
T(RMS)
Figure 1. Typical RMS Current Derating Figure 2. On–State Power Dissipation
30°
60°
45
90°
180°
67
I
at V
RRM
Reverse Avalanche Region
Anode –
dc
RRM
Reverse Blocking Region
(off state)
20
18
16
14
12
10
8
6
4
2
, AVERAGE POWER DISSIPA TION (WATTS)
(AV)
P
0
I
T(AV)
80
V
TM
on state
I
H
I
at V
DRM
Forward Blocking Region
(off state)
60°
30°
380
4
, AVERAGE ON–STATE CURRENT (AMPS)
90°
5
DRM
67
+ Voltage
180°
dc
100
MAXIMUM @ TJ = 25°C
MAXIMUM @ TJ = 125°C
10
1
0.1
, INSTANTANEOUS ON–STATE CURRENT (AMPS)
T
VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)
I
1.0 2.0 20 50 80 125
1.5
Figure 3. T ypical On–State Characteristics Figure 4. Typical Gate Trigger Current versus
2.5
3.00.5
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20
18
16
14
12
10
8
6
4
GATE TRIGGER CURRENT (mA)
2
0
–25
5356595
–10–40
TJ, JUNCTION TEMPERATURE (°C)
110
Junction T emperature
3
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