ON Semiconductor MBR2030CTL Technical data
MBR2030CTL
SWITCHMODE™ Dual
Schottky Power Rectifier
Features and Benefits
• Highly Stable Oxide Passivated Junction
• Very Low Forward Voltage Drop (0.4 Max @ 10 A, T
• High Junction Temperature
• High dv/dt Capability
• Excellent Ability to Withstand Reverse Avalanche Energy Transients
• Low Power Loss / High Efficiency
• High Surge Capacity
• 175°C Operating Junction Temperature
• 20 A Total (10 A Per Diode Leg)
• Pb−Free Package is Available*
Applications
• Power Supply − Output Rectification
• Power Management − ORING
• Instrumentation
= 150°C)
C
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SCHOTTKY BARRIER
RECTIFIER
20 AMPERES, 30 VOLTS
1
2, 4
3
MARKING
DIAGRAM
4
Mechanical Characteristics
• Case: Epoxy, Molded
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 1.9 Grams (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Sec
• ESD Rating: Human Body Model 3B
Machine Model C
TO−220AB
CASE 221A
PLASTIC
1
2
3
A = Assembly Location
Y = Year
WW = Work Week
B2030L = Device Code
G = Pb−Free Package
AKA = Diode Polarity
ORDERING INFORMATION
Device Package Shipping
MBR2030CTL TO−220 50 Units/Rail
MBR2030CTLG TO−220
(Pb−Free)
AYWW
B2030LG
AKA
50 Units/Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 4
1 Publication Order Number:
MBR2030CTL/D
MBR2030CTL
MAXIMUM RATINGS (Per Leg)
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(TC = 167_C) Per Diode
Per Device
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Peak Repetitive Forward Current
(Square Wave, 20 kHz, TC = 166°C)
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
Operating Junction Temperature (Note 1) T
Storage Temperature T
Voltage Rate of Change (Rated VR) dv/dt 1000
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS (Per Leg)
Rating Symbol Value Unit
Maximum Thermal Resistance, Junction−to−Case (Min. Pad)
Maximum Thermal Resistance, Junction−to−Ambient (Min. Pad)
Symbol Value Unit
V
V
I
F(AV)
RRM
RWM
V
R
30 V
A
10
20
I
FSM
I
FRM
I
RRM
J
stg
150 A
10 A
1.0 A
*65 to +175 °C
*65 to +175 °C
V/ms
R
q
JC
R
q
JA
2.0 °C/W
60 °C/W
ELECTRICAL CHARACTERISTICS (Per Leg)
Characteristic Symbol Min Typ Max Unit
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 10 Amps, TJ= 25°C)
(iF = 10 Amps, TJ = 150°C)
(iF = 20 Amps, TJ = 25°C)
(iF = 20 Amps, TJ = 150°C)
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 100°C)
(Rated dc Voltage, TJ = 125°C)
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/R
2. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.
v
F
i
R
0.45
0.32
0.51
0.41
0.52
0.40
0.58
0.48
−
−
−
−
mA
−
V
0.11
−
−
.
q
JA
10
5.0
40
−
75
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2
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