ON Semiconductor ESD7421, SZESD7421 User Manual
ESD7421, SZESD7421
ESD Protection Diode
Micro−Packaged Diodes for ESD Protection
The ESD7421 is designed to protect voltage sensitive components
from ESD. Excellent clamping capability, low leakage, and fast
response time provide best in class protection on designs that are
exposed to ESD. Because of its small size, it is suited for use in cellular
phones, automotive sensors, infotainment, MP3 players, digital
cameras and many other applications where board space comes at a
premium.
Specification Features
• Low Capacitance 0.3 pF
• Low Clamping Voltage
• Low Leakage 100 nA
• Response Time is < 1 ns
• IEC61000−4−2 Level 4 ESD Protection
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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Pin 1
XDFN2
(SOD−882)
CASE 711AM
5 = Specific Device Code
M = Date Code
G = Pb−Free Package
Pin 2
MARKING
DIAGRAM
5 M
G
MAXIMUM RATINGS
Rating Symbol Value Unit
IEC 61000−4−2 (ESD) Contact
Total Power Dissipation on FR−5 Board
(Note 1) @ TA = 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature Range TJ, T
Lead Solder Temperature − Maximum
(10 Second Duration)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.62 in.
Air
°PD°
R
q
T
JA
stg
L
±12
±15
300
400
−55 to +150 °C
260 °C
kV
mW
°C/W
ORDERING INFORMATION
Device Package Shipping
ESD7421N2T5G XDFN2
(Pb−Free)
SZESD7421N2T5G XDFN2
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
8000 /
Tape & Reel
8000 /
Tape & Reel
†
See Application Note AND8308/D for further description of survivability specs.
© Semiconductor Components Industries, LLC, 2016
October, 2017 − Rev. 3
1 Publication Order Number:
ESD7421/D
ESD7421, SZESD7421
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
I
PP
V
C
V
RWM
I
R
V
BR1
V
BR2
I
T
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
Breakdown Voltage @ I
Breakdown Voltage @ I
Test Current
Parameter
PP
T
T
RWM
VCV
V
RWM
BR2
Bi−Directional
I
I
PP
I
T
I
R
I
V
RWM
V
R
I
T
I
PP
BR1
V
V
C
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise specified)
A
Parameter Symbol Conditions Min Typ Max Unit
Reverse Working
Voltage
Breakdown Voltage V
Breakdown Voltage V
Reverse Leakage
Current
Clamping Voltage
(Note 2)
Clamping Voltage TLP
(Note 3)
Junction Capacitance C
V
RWM
BR1
BR2
I
R
V
C
V
C
J
Pin 1 to GND
Pin 2 to GND
I
= 1 mA, Pin 1 to GND 16.5 V
T
I
= 1 mA, Pin 2 to GND 10.5 14 V
T
V
= 5 V, I/O Pin to GND
RWM
V
= 16 V, Pin 1 to GND
RWM
5
5
16
10
100 500
1.0
nA
mA
IEC61000−4−2, ±8 kV Contact See Figures 2 and 3
IPP = 8 A
IPP = 16 A
IPP = −8 A
IPP = −16 A
35
38.1
−21
−29.5
VR = 0 V, f = 1 MHz between I/O Pins and GND 0.3 0.6 pF
V
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. For test procedure see Figure 5 and application note AND8307/D.
3. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.
TLP conditions: Z
= 50 W, tp = 100 ns, tr = 4 ns, averaging window; t1 = 30 ns to t2 = 60 ns.
0
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2
ESD7421, SZESD7421
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
CAPACITANCE (pF)
0.2
0.1
0
−5 −4 −20123 5
VBias (V)
Figure 1. Typical CV Characteristic Curve
Pin1 to GND (GND connected to Pin2)
4−1−3
120
100
80
60
40
VOLTAGE (V)
20
−20
0
−25
0
25 50 75 150100 125
TIME (ns)
Figure 2. IEC61000−4−2 +8 kV Contact ESD
Clamping Voltage
Pin1 to GND (GND connected to Pin2)
20
0
−20
−40
−60
VOLTAGE (V)
−80
−100
−120
−25
0 25 50 150100 125
75
TIME (ns)
Figure 3. IEC61000−4−2 −8 kV Contact ESD
Clamping Voltage
Pin1 to GND (GND connected to Pin2)
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