ON Semiconductor DTA114GE Datasheet
SEMICONDUCTOR TECHNICAL DATA
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by DTA114GE/D
PNP Bipolar Junction Transistor
with a 10 kW Base–Emitter Resistor
MAXIMUM RATINGS (T
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current I
Base Current I
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 85°C
Thermal Resistance — Junction to Ambient
Operating and Storage Temperature Range –55 to 150 °C
1. Minimum FR–4 or G–10 PCB, Operating to Steady State.
= 25°C unless otherwise noted)
J
Rating Symbol Value Unit
50 V
50 V
5.0 V
100 mA
20 mA
150
78
833
(1)
CEO
CBO
EBO
P
P
R
C
B
D
D
q
JA
mW
mW
°C/W
50 Volts
100 mAmps
150 mW
3
1
CASE 463–01
SOT–416/SC–90
BASE (1)
R
BE
2
COLLECTOR (3)
EMITTER (2)
ELECTRICAL CHARACTERISTICS (T
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 50 µAdc)
Collector–Emitter Breakdown Voltage
(IC = 1.0 mAdc)
Collector–Emitter Breakdown Voltage
(IE = 720 mAdc)
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0 Adc)
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0 Adc)
ON CHARACTERISTICS
DC Current Gain
(VCE = 5.0 Vdc, IC = 5.0 mAdc)
Collector–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 500 mAdc)
= 25°C unless otherwise noted)
C
RBE = 10 k
Symbol Min Typ Max Unit
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
50 — —
50 — —
5.0 — —
— — 0.5
300 — 580
30 — —
— — 0.3
W
Vdc
Vdc
Vdc
m
Adc
m
Adc
Vdc
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
Thermal Clad is a trademark of the Bergquist Company
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1998
1
DT A114GE
TYPICAL ELECTRICAL CHARACTERISTICS
0.4
0.3
0.2
, VOLTAGE (V)
CE(sat)
V
0.1
IC = 1.0 mA
0
0.01 0.1 1.0 10 100
10 mA
IB, BASE CURRENT (mA)
50 mA
Figure 1. Collector–Emitter Saturation V oltage
1.0
V
BE(sat)
0.1
VOLTAGE (V)
V
CE(sat)
IC/IB = 10
100 mA
0.18
IC/IB = 10
0.12
, VOLTAGE (V)
0.06
CE(sat)
V
0
1.0 100
IC, COLLECTOR CURRENT (mA)
T = 85°C
0°C
10
Figure 2. Collector–Emitter Saturation V oltage
1000
VCE = 1.0 V
25°C
100
, DC CURRENT GAIN
FE
h
150°C
–40°C
25°C
0.01
1.0 10 100
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages Figure 4. DC Current Gain
1000
VCE = 5.0 V
25°C
100
, DC CURRENT GAIN
FE
h
10
1.0 10 100 1000
Figure 5. DC Current Gain
10
1.0 10 100 1000
150°C
–40°C
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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