ON Semiconductor DAN222 Datasheet

DAN222

Common Cathode Silicon
Dual Switching Diode

This Common Cathode Silicon Epitaxial Planar Dual Diode is
designed for use in ultra high speed switching applications. This
device is housed in the SOT–416/SC–90 package which is designed
for low power surface mount applications, where board space is at a
premium.

• Fast t

• Low C

• Available in 8 mm T ape and Reel

rr

D

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SOT–416/SC–90 PACKAGE

COMMON CATHODE

DUAL SWITCHING DIODE

SURFACE MOUNT

MAXIMUM RATINGS (TA = 25°C)

Rating Symbol Value Unit

Reverse Voltage V
Peak Reverse Voltage V
Forward Current I
Peak Forward Current I
Peak Forward Surge Current I

THERMAL CHARACTERISTICS

Rating Symbol Max Unit

Power Dissipation P
Junction Temperature T
Storage Temperature Range T

1. t = 1 µS

R

RM

F

FM

(1) 2.0 Adc

FSM

D
J

stg

80 Vdc

80 Vdc
100 mAdc
300 mAdc

150 mW
150 °C

–55 to +150 °C

CATHODE

3

12

ANODE

3

2

1

SOT–416

CASE 463

STYLE 3

DEVICE MARKING

 Semiconductor Components Industries, LLC, 2000

March, 2000 – Rev . 2

N9

ORDERING INFORMATION

Device Package Shipping

DAN222 SOT–416 3000/Tape & Reel

1 Publication Order Number:

DAN222/D

DAN222

ELECTRICAL CHARACTERISTICS (T

Characteristic

Reverse Voltage Leakage Current I
Forward Voltage V
Reverse Breakdown Voltage V
Diode Capacitance C

= 25°C)

A

Symbol Condition Min Max Unit

R

F
R
D

VR = 70 V — 0.1 µAdc
IF = 100 mA — 1.2 Vdc
IR = 100 µA 80 — Vdc

VR = 6.0 V, f = 1.0 MHz — 3.5 pF

Reverse Recovery Time trr(2) IF = 5.0 mA, VR = 6.0 V, RL = 100 Ω, Irr = 0.1 I

2. trr Test Circuit on following page.

— 4.0 ns

R

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2

DAN222

TYPICAL ELECTRICAL CHARACTERISTICS

100

10

1.0

, FORWARD CURRENT (mA)

F

I

0.1

0.2 0.4

TA = 85°C

TA = –40°C

TA = 25°C

0.6 0.8 1.0

VF, FORWARD VOLTAGE (VOLTS)

1.2

, REVERSE CURRENT (µA)

R

I

1.0

0.1

0.01

0.001

10

0

10 20 30 40

TA = 150°C
TA = 125°C

TA = 85°C

TA = 55°C

TA = 25°C

, REVERSE VOLTAGE (VOLTS)

V

R

Figure 1. Forward Voltage Figure 2. Reverse Current

1.0

0.9

0.8

50

, DIODE CAPACITANCE (pF)

D

C

0.7

0.6
0

2468

, REVERSE VOLTAGE (VOLTS)

V

R

Figure 3. Diode Capacitance

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