ON Semiconductor DA121TT1 Datasheet
DA121TT1
Preferred Device
Advance Information
Silicon Switching Diode
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MAXIMUM RATINGS (T
Rating Symbol Max Unit
Continuous Reverse Voltage V
Recurrent Peak Forward Current I
Peak Forward Surge Current
Pulse Width = 10 ms
= 25°C)
A
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation,
FR–4 Board
TA = 25°C
Derated above 25°C
Thermal Resistance,
Junction to Ambient
Total Device Dissipation,
FR–4 Board
TA = 25°C
Derated above 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage
T emperature Range
(1) FR–4 @ Minimum Pad
(2) FR–4 @ 1.0 × 1.0 Inch Pad
(1)
(1)
(2)
(2)
R
F
I
FM(surge)
P
D
R
θJA
P
D
R
θJA
TJ, T
stg
80 V
200 mA
500 mA
225
1.8
555 °C/W
360
2.9
345 °C/W
–55 to
+150
mW/°C
mW/°C
mW
mW
°C
3
CATHODE
3
1
CASE 463
SOT–416/SC–75
STYLE 2
DEVICE MARKING
6A
1
ANODE
2
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
Semiconductor Components Industries, LLC, 2000
May, 2000 – Rev. 1
1 Publication Order Number:
ORDERING INFORMATION
Device Package Shipping
DA121TT1 SOT–416
Preferred devices are recommended choices for future use
and best overall value.
3000 / Tape & Reel
DA121TT1/D
DA121TT1
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Max Unit
Forward Voltage
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 50 mA)
(IF = 150 mA)
Reverse Current
(VR = 75 V)
(VR = 75 V, TJ = 150°C)
(VR = 25 V, TJ = 150°C)
Capacitance
(VR = 0, f = 1.0 MHz)
Reverse Recovery Time
(IF = IR = 10 mA, RL = 50 Ω) (Figure 1)
Stored Charge
(IF = 10 mA to VR = 6.0 V, RL = 500 Ω) (Figure 2)
Forward Recovery Voltage
(IF = 10 mA, tr = 20 ns) (Figure 3)
A
= 25°C unless otherwise noted)
V
F
I
R
C
D
t
rr
QS — 45 PC
V
FR
—
—
—
—
—
—
—
— 2.0 pF
— 6.0 ns
— 1.75 V
715
866
1000
1250
1.0
50
30
mV
µA
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2
DA121TT1
1
ns MAX
t
10%
90%
V
F
100 ns
t
if
t
rr
I
rr
500 Ω
DUTY CYCLE = 2%
Figure 1. Reverse Recovery Time Equivalent Test Circuit
DUT BAW62
500 Ω
D1 243 pF 100 KΩ
10%
20 ns MAX
V
C
V
CM
t
Qa
VCM+
C
DUT
50 Ω
OSCILLOSCOPE
R ≥ 10 MΩ
C ≤ 7 pF
DUTY CYCLE = 2%
90%
V
f
400 ns
t
Figure 2. Recovery Charge Equivalent T est Circuit
120 ns
V
90%
10%
2 ns MAX
t
V
1 KΩ 450 Ω
V
fr
DUTY CYCLE = 2%
50 ΩDUT
Figure 3. Forward Recovery V oltage Equivalent Test Circuit
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3
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