ON Semiconductor CM1220 User Manual

CM1220

,

4 and 8-Channel ESD
Protection Arrays in CSP

Description

The CM1220 ESD protection arrays are available in four and eight
channel configurations. Each ESD channel features a nominal
capacitance of 14 pF making the devices ideal for protecting high
speed I/O ports and LCD and camera data lines without significantly
affecting signal integrity. The CM1220 integrates avalanche−type
ESD diodes on every channel, providing a very high level of
protection for sensitive electronic components that may be subjected
to electrostatic discharge (ESD). These diodes safely dissipate ESD
strikes of
IEC61000−4−2 international standard. Using the MIL−STD−883
(Method 3015) specification for Human Body Model (HBM) ESD, the
CM1220 protect against contact discharges at greater than

These devices are particularly well−suited for portable electronics
(e.g. wireless handsets, PDAs, notebook computers) because of their
small package and easy−to−use pin assignments. In particular, the
CM1220 is ideal for protecting high speed I/O ports and data and
control lines for the LCD display and camera interface in mobile
handsets.

The CM1220 incorporates ON Semiconductor’s OptiGuardt
coating for improved reliability at assembly in a space−saving,
low−profile Chip Scale Package.

Features

• Four and Eight Channels of ESD Protection

• OptiGuardtCoated for Improved Reliability

• ±15 kV ESD Protection on each Channel (IEC 61000−4−2 Level 4,

contact discharge)

• ±30 kV ESD Protection on each Channel (HBM)

• Chip Scale Package (CSP) Features Extremely Low Lead Inductance

for Optimum ESD Protection

• 5 bump, 0.960 mm X 1.330 mm CSP Footprint for CM1220−04

• 10 bump, 1.960 mm X 1.330 mm CSP Footprint for CM1220−08

• These Devices are Pb−Free and are RoHS Compliant

Applications

• LCD and Camera Data Lines in Mobile Handsets

• I/O Port Protection for Mobile Handsets, Notebook Computers,

PDAs, etc.

• Keypads and Buttons

• Wireless Handsets

• Handheld PCs/PDAs

• LCD and Camera Modules

±15 kV, exceeding the maximum requirement of the

±30 kV.

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WLCSP5

CP SUFFIX

CASE 567AY

BLOCK DIAGRAM

ESD_1
A1

B2

GND

ESD_1

ESD_2

A1 A3 A5 A7

B1, B2

GND

J

CM1220−04

5−Bump CSP Package

J = CM1220−04CP
L208 = CM1220−08CP

ORDERING INFORMATION

Device Package Shipping

CM1220−04CP CSP−5

CM1220−08CP CSP−10

ESD_3

MARKING DIAGRAM

(Pb−Free)

(Pb−Free)

WLCSP10

CP SUFFIX

CASE 567BL

ESD_2

A3 C1

CM1220−04

ESD_4

CM1220−08

10−Bump CSP Package

ESD_3

ESD_4

C3

ESD_5

ESD_6

C1 C3 C5 C7

CM1220−08

3500/Tape & Reel

3500/Tape & Reel

ESD_7

L208

†

ESD_8

© Semiconductor Components Industries, LLC, 2011

February, 2011 − Rev. 3

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure

1 Publication Order Number:

BRD8011/D.

CM1220/D

CM1220

PACKAGE / PINOUT DIAGRAMS

Bottom View

(Bumps Up View)

C1 C3

B2

A1 A3

A1

C1 C3

B2

A1 A3

A1

C5 C7

B6

A5 A7

Orientation

Marking

Orientation

Marking

Top View

(Bumps Down View)

+

A

B

C

123

+

A

B

C

L208

123

J

Orientation

Marking

CM1220−04

5−bump CSP Package

with OptiGuard

567

Orientation

Marking

CM1220−08

10−bump CSP Package

with OptiGuard

Table 1. PIN DESCRIPTIONS

CM1220−08 CM1220−04

Pins Name Pins Name Pins Name Pins Name

A1 ESD1 A1 ESD1 ESD Channel C1 ESD5 C1 ESD3 ESD Channel

A3 ESD2 A3 ESD2 ESD Channel C3 ESD6 C3 ESD4 ESD Channel

A5 ESD3 − − ESD Channel C5 ESD7 − − ESD Channel

A7 ESD4 − − ESD Channel C7 ESD8 − − ESD Channel

B2 GND B2 GND Device Ground B6 GND − − Device Ground

Description

CM1220−08 CM1220−04

Description

SPECIFICATIONS

Table 2. ABSOLUTE MAXIMUM RATINGS

Parameter Rating Units

Storage Temperature Range −65 to +150 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.

Table 3. STANDARD OPERATING CONDITIONS

Parameter Rating Units

Operating Temperature Range −40 to +85 °C

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CM1220

Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)

Symbol

C

DIODE

V

DIODE

I

LEAK

V

Diode (Channel) Capacitance At 2.5 VDC Reverse Bias,

Diode Standoff Voltage

Diode Leakage Current V

Signal Clamp Voltage

SIG

Positive Clamp
Negative Clamp

V

ESD

In−system ESD Withstand Voltage

a) Human Body Model, MIL−STD−883, Method 3015
b) Contact Discharge per IEC 61000−4−2

R

DYN

Dynamic Resistance

Positive
Negative

1. T

= 25 °C unless otherwise specified.

A

2. ESD applied to input and output pins with respect to GND, one at a time. Unused pins are left open.

Parameter Conditions Min Typ Max Units

1 MHz, 30 mVAC

I

= 10 mA

DIODE

= +3.3 V

IN

(reverse bias voltage)

I

= 10 mA

DIODE

(Note 2)

PERFORMANCE INFORMATION

11 14 17 pF

6.0 V

0.1 1

5.6

−1.5

6.8

−0.8

9.0

−0.4

±30
±15

2.3

0.9

mA

V

kV

W

Diode Characteristics (nominal conditions unless specified otherwise)

Capacitance (Normalized)

DC Voltage

Figure 1. Insertion Loss vs. Frequency (0 V Bias)

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