ON Semiconductor C106M1, C106M, C106D1, C106D, C106B Datasheet

C106 Series

Preferred Devices

Sensitive Gate
Silicon Controlled Rectifiers

Reverse Blocking Thyristors

Glassivated PNPN devices designed for high volume consumer
applications such as temperature, light, and speed control; process and
remote control, and warning systems where reliability of operation is
important.

• Glassivated Surface for Reliability and Uniformity

• Power Rated at Economical Prices

• Practical Level Triggering and Holding Characteristics

• Flat, Rugged, Thermopad Construction for Low Thermal Resistance,

High Heat Dissipation and Durability

• Sensitive Gate Triggering

• Device Marking: Device Type, e.g., C106B, Date Code

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SCRs

4 AMPERES RMS

200 thru 600 VOLTS

G

A

K

MAXIMUM RATINGS (T

Rating Symbol Value Unit

Peak Repetitive Off–State Voltage (Note 1)

(Sine Wave, 50–60 Hz, R
T

= –40° to 110°C)

C

On-State RMS Current

(180° Conduction Angles, T

Average On–State Current

(180° Conduction Angles, T

Peak Non-Repetitive Surge Current

(1/2 Cycle, Sine Wave, 60 Hz,

= +110°C)

T

J

Circuit Fusing Considerations (t = 8.3 ms) I2t 1.65 A2s
Forward Peak Gate Power

(Pulse Width 1.0 µsec, T

Forward Average Gate Power

(Pulse Width 1.0 µsec, T

Forward Peak Gate Current

(Pulse Width 1.0 µsec, T

Operating Junction Temperature Range T

Storage Temperature Range T

Mounting Torque (Note 2) – 6.0 in. lb.

1. V

2. Torque rating applies with use of compression washer (B52200F006).

and V

DRM

apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.

Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink
thermal resistance. Anode lead and heatsink contact pad are common.

for all types can be applied on a continuous basis. Ratings

RRM

= 25°C unless otherwise noted)

J

= 1 kΩ,

GK

C106B
C106D, C106D1
C106M, C106M1

= 80°C)

C

= 80°C)

C

= 80°C)

C

= 80°C)

C

= 80°C)

C

V

V

I

T(RMS)

I

P

DRM,

RRM

T(AV)

I

TSM

P

GM

G(AV)

I

GM

stg

Volts

200
400
600

4.0 Amps

2.55 Amps

20 Amps

0.5 Watt

0.1 Watt

0.2 Amp

–40 to

J

+110

–40 to

+150

°C

°C

3

2

1

TO–225AA

(formerly TO–126)

CASE 077

STYLE 2

PIN ASSIGNMENT

1
2
3

Cathode

Anode

Gate

ORDERING INFORMATION

Device Package Shipping

C106B TO225AA 500/Box
C106D TO225AA
C106D1 TO225AA 500/Box

C106M TO225AA
C106M1 TO225AA

Preferred devices are recommended choices for future use
and best overall value.

500/Box

500/Box
500/Box

 Semiconductor Components Industries, LLC, 2002

March, 2002 – Rev . 4

1 Publication Order Number:

C106/D

C106 Series

THERMAL CHARACTERISTICS (T

= 25°C unless otherwise noted.)

C

Characteristic

Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Ambient R
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds T

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C unless otherwise noted.)

C

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Peak Repetitive Forward or Reverse Blocking Current

(V

= Rated V

AK

DRM

or V

, RGK = 1000 Ohms) TJ = 25°C

RRM

= 110°C

T

J

I

DRM

, I

RRM

ON CHARACTERISTICS

Peak Forward On–State Voltage (Note 3)

(I

= 4 A)

TM

Gate Trigger Current (Continuous dc) (Note 4)

(V

= 6 Vdc, RL = 100 Ohms) TJ = 25°C

AK

T

= –40°C

J

Peak Reverse Gate Voltage (IGR = 10 µA) V
Gate Trigger Voltage (Continuous dc) (Note 4)

(V

= 6 Vdc, RL = 100 Ohms) TJ = 25°C

AK

= –40°C

T

J

Gate Non–Trigger Voltage (Continuous dc) (Note 4)

(V

= 12 V, RL = 100 Ohms, TJ = 110°C)

AK

Latching Current

= 12 V, IG = 20 mA) TJ = 25°C

(V

AK

T

= –40°C

J

Holding Current (VD = 12 Vdc)

(Initiating Current = 20 mA, Gate Open) T

= 25°C

J

= –40°C

T

J

T

= +110°C

J

V

I

GT

GRM

V

V

I

I

TM

GT

GD

L

H

DYNAMIC CHARACTERISTICS

Critical Rate–of–Rise of Off–State Voltage

(V

= Rated V

AK

= 110°C)

T

J

, Exponential Waveform, RGK = 1000 Ohms,

DRM

3. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

is not included in measurement.

4. R

GK

dv/dt – 8.0 – V/µs

Symbol Max Unit

θ

JC

θ

JA
L

–
–

3.0 °C/W
75 °C/W

260 °C

–
–

10

100

– – 2.2 Volts

–
–

15
35

200
500

– – 6.0 Volts

0.4

0.5

0.60

0.75

0.8

1.0

0.2 – – Volts

–
–

–
–
–

0.20

0.35

0.19

0.33

0.07

5.0

7.0

3.0

6.0

2.0

µA
µA

µA

Volts

mA

mA

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2

C106 Series

Voltage Current Characteristic of SCR

+ Current

Anode +

Symbol Parameter

V

DRM

I

DRM

V

RRM

I

RRM

V

TM

I

H

110

100

90

°T , CASE TEMPERATURE ( C)

80

70

60

50

40

30

C

20
10

0 .4 .8 1.61.2 2.0 2.4 3.2

Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current

HALF SINE WAVE
RESISTIVE OR INDUCTIVE LOAD.
50 to 400 Hz

I

AVERAGE ONSTATE CURRENT (AMPERES)

T(AV)

Figure 1. Average Current Derating Figure 2. Maximum On–State Power Dissipation

DC

2.8

at V

I

RRM

RRM

Reverse Blocking Region

(off state)

Reverse Avalanche Region

Anode –

10

8

HALF SINE WAVE
RESISTIVE OR INDUCTIVE LOAD
50 TO 400Hz.

6

4

2

0

(AV)

P , AVERAGE ONSTATE POWER DISSIPATION (WATTS)

0

3.6

4.0

V

TM

on state

I

H

I

at V

DRM

Forward Blocking Region

(off state)

JUNCTION TEMPERATURE ≈ 110°C

I

AVERAGE ONSTATE CURRENT (AMPERES)

T(AV)

+ Voltage

DRM

DC

3.6.4 .8 1.61.2 2.0 2.4 3.2 4.02.6

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