C106 Series
Preferred Devices
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Glassivated PNPN devices designed for high volume consumer
applications such as temperature, light, and speed control; process and
remote control, and warning systems where reliability of operation is
important.
• Glassivated Surface for Reliability and Uniformity
• Power Rated at Economical Prices
• Practical Level Triggering and Holding Characteristics
• Flat, Rugged, Thermopad Construction for Low Thermal Resistance,
High Heat Dissipation and Durability
• Sensitive Gate Triggering
• Device Marking: Device Type, e.g., C106B, Date Code
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SCRs
4 AMPERES RMS
200 thru 600 VOLTS
G
A
K
MAXIMUM RATINGS (T
Rating Symbol Value Unit
Peak Repetitive Off–State Voltage (Note 1)
(Sine Wave, 50–60 Hz, R
T
= –40° to 110°C)
C
On-State RMS Current
(180° Conduction Angles, T
Average On–State Current
(180° Conduction Angles, T
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz,
= +110°C)
T
J
Circuit Fusing Considerations (t = 8.3 ms) I2t 1.65 A2s
Forward Peak Gate Power
(Pulse Width 1.0 µsec, T
Forward Average Gate Power
(Pulse Width 1.0 µsec, T
Forward Peak Gate Current
(Pulse Width 1.0 µsec, T
Operating Junction Temperature Range T
Storage Temperature Range T
Mounting Torque (Note 2) – 6.0 in. lb.
1. V
2. Torque rating applies with use of compression washer (B52200F006).
and V
DRM
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink
thermal resistance. Anode lead and heatsink contact pad are common.
for all types can be applied on a continuous basis. Ratings
RRM
= 25°C unless otherwise noted)
J
= 1 kΩ,
GK
C106B
C106D, C106D1
C106M, C106M1
= 80°C)
C
= 80°C)
C
= 80°C)
C
= 80°C)
C
= 80°C)
C
V
V
I
T(RMS)
I
P
DRM,
RRM
T(AV)
I
TSM
P
GM
G(AV)
I
GM
stg
Volts
200
400
600
4.0 Amps
2.55 Amps
20 Amps
0.5 Watt
0.1 Watt
0.2 Amp
–40 to
J
+110
–40 to
+150
°C
°C
3
2
1
TO–225AA
(formerly TO–126)
CASE 077
STYLE 2
PIN ASSIGNMENT
1
2
3
Cathode
Anode
Gate
ORDERING INFORMATION
Device Package Shipping
C106B TO225AA 500/Box
C106D TO225AA
C106D1 TO225AA 500/Box
C106M TO225AA
C106M1 TO225AA
Preferred devices are recommended choices for future use
and best overall value.
500/Box
500/Box
500/Box
Semiconductor Components Industries, LLC, 2002
March, 2002 – Rev . 4
1 Publication Order Number:
C106/D
C106 Series
THERMAL CHARACTERISTICS (T
= 25°C unless otherwise noted.)
C
Characteristic
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Ambient R
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds T
ELECTRICAL CHARACTERISTICS (T
Characteristic
= 25°C unless otherwise noted.)
C
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(V
= Rated V
AK
DRM
or V
, RGK = 1000 Ohms) TJ = 25°C
RRM
= 110°C
T
J
I
DRM
, I
RRM
ON CHARACTERISTICS
Peak Forward On–State Voltage (Note 3)
(I
= 4 A)
TM
Gate Trigger Current (Continuous dc) (Note 4)
(V
= 6 Vdc, RL = 100 Ohms) TJ = 25°C
AK
T
= –40°C
J
Peak Reverse Gate Voltage (IGR = 10 µA) V
Gate Trigger Voltage (Continuous dc) (Note 4)
(V
= 6 Vdc, RL = 100 Ohms) TJ = 25°C
AK
= –40°C
T
J
Gate Non–Trigger Voltage (Continuous dc) (Note 4)
(V
= 12 V, RL = 100 Ohms, TJ = 110°C)
AK
Latching Current
= 12 V, IG = 20 mA) TJ = 25°C
(V
AK
T
= –40°C
J
Holding Current (VD = 12 Vdc)
(Initiating Current = 20 mA, Gate Open) T
= 25°C
J
= –40°C
T
J
T
= +110°C
J
V
I
GT
GRM
V
V
I
I
TM
GT
GD
L
H
DYNAMIC CHARACTERISTICS
Critical Rate–of–Rise of Off–State Voltage
(V
= Rated V
AK
= 110°C)
T
J
, Exponential Waveform, RGK = 1000 Ohms,
DRM
3. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
is not included in measurement.
4. R
GK
dv/dt – 8.0 – V/µs
Symbol Max Unit
θ
JC
θ
JA
L
–
–
3.0 °C/W
75 °C/W
260 °C
–
–
10
100
– – 2.2 Volts
–
–
15
35
200
500
– – 6.0 Volts
0.4
0.5
0.60
0.75
0.8
1.0
0.2 – – Volts
–
–
–
–
–
0.20
0.35
0.19
0.33
0.07
5.0
7.0
3.0
6.0
2.0
µA
µA
µA
Volts
mA
mA
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2
C106 Series
Voltage Current Characteristic of SCR
+ Current
Anode +
Symbol Parameter
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
110
100
90
°T , CASE TEMPERATURE ( C)
80
70
60
50
40
30
C
20
10
0 .4 .8 1.61.2 2.0 2.4 3.2
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
HALF SINE WAVE
RESISTIVE OR INDUCTIVE LOAD.
50 to 400 Hz
I
AVERAGE ONSTATE CURRENT (AMPERES)
T(AV)
Figure 1. Average Current Derating Figure 2. Maximum On–State Power Dissipation
DC
2.8
at V
I
RRM
RRM
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode –
10
8
HALF SINE WAVE
RESISTIVE OR INDUCTIVE LOAD
50 TO 400Hz.
6
4
2
0
(AV)
P , AVERAGE ONSTATE POWER DISSIPATION (WATTS)
0
3.6
4.0
V
TM
on state
I
H
I
at V
DRM
Forward Blocking Region
(off state)
JUNCTION TEMPERATURE ≈ 110°C
I
AVERAGE ONSTATE CURRENT (AMPERES)
T(AV)
+ Voltage
DRM
DC
3.6.4 .8 1.61.2 2.0 2.4 3.2 4.02.6
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3
C106 Series
100
I
, GATE TRIGGER CURRENT ( A)
GT
1
, JUNCTION TEMPERATURE (°C)
T
J
65
95-40 -25 -10 20535508010110
Figure 3. Typical Gate Trigger Current versus
Junction Temperature
1.0
0.9
0.8
0.7
1000
I
, HOLDING CURRENT ( A)
H
1000
I
100
10
, JUNCTION TEMPERATURE (°C)
T
J
Figure 4. Typical Holding Current versus
Junction Temperature
65
95-40 -25 -10 205355080
110
0.6
0.5
0.4
, GATE TRIGGER VOLTAGE (V)
GT
V
0.3
0.2
, JUNCTION TEMPERATURE (°C)
T
J
65
95-45 -25 -10 205355080
Figure 5. Typical Gate Trigger Voltage versus
Junction Temperature
110
100
, LATCHING CURRENT ( A)
L
10
, JUNCTION TEMPERATURE (°C)
T
J
65
95-40 -25 -10 205355080
110
Figure 6. Typical Latching Current versus
Junction Temperature
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4
C106 Series
Package Interchangeability
The dimensional diagrams below compare the critical dimensions of the ON Semiconductor
C-106 package with competitive d evices. It has b een demonstrated that the smaller dimensions o f
the ON Semiconductor package make it compatible in most lead-mount and chassis-mount
applications. The user is advised to compare all critical dimensions for mounting compatibility.
.400
.295
____
.305
.145
____
.155
.148
____
.158
123
.050
____
.095
.020
____
.026
.425
____
.435
.575
____
.655
.040
.094 BSC
.025
____
.035
.115
____
.130
5 TYP
.095
____
.105
.015
____
.025
.045
____
.055
____
.360
.127
.135
____
.115
.385
____
.365
.420
____
.400
.105
____
.095
____
DIA
.123
.520
____
.480
.315
____
.285
.105
____
.095
.054
____
.046
.026
____
.019
.190
____
.170
ON Semiconductor C-106 Package
Competitive C-106 Package
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5
C106 Series
PACKAGE DIMENSIONS
TO–225AA
(formerly TO–126)
CASE 077–09
ISSUE W
–B–
–A–
K
F
M
U
Q
132
H
V
G
0.25 (0.010) B
S
D
2 PL
M
0.25 (0.010) B
A
C
J
R
M
M
A
M
M
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM MIN MAX MIN MAX
A 0.425 0.435 10.80 11.04
B 0.295 0.305 7.50 7.74
C 0.095 0.105 2.42 2.66
D 0.020 0.026 0.51 0.66
F 0.115 0.130 2.93 3.30
G 0.094 BSC 2.39 BSC
H 0.050 0.095 1.27 2.41
J 0.015 0.025 0.39 0.63
K 0.575 0.655 14.61 16.63
M 5 TYP 5 TYP
Q 0.148 0.158 3.76 4.01
R 0.045 0.065 1.15 1.65
S 0.025 0.035 0.64 0.88
U 0.145 0.155 3.69 3.93
V 0.040 --- 1.02 ---
STYLE 2:
PIN 1. CATHODE
2. ANODE
3. GATE
MILLIMETERSINCHES
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6
Notes
C106 Series
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7
C106 Series
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to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products
for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any
and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must
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arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
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JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2700
Email: r14525@onsemi.com
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For additional information, please contact your local
Sales Representative.
C106/D
8
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