ON Semiconductor BTA12-600BW3G, BTA12-800BW3G Technical data

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BTA12-600BW3G,
BTA12-800BW3G

Triacs

Silicon Bidirectional Thyristors

Designed for high performance full−wave ac control applications

where high noise immunity and high commutating di/dt are required.

Features

• Blocking Voltage to 800 V

• On-State Current Rating of 12 A RMS at 25°C

• Uniform Gate Trigger Currents in Three Quadrants

• High Immunity to dV/dt − 2000 V/ms minimum at 125°C

• Minimizes Snubber Networks for Protection

• Industry Standard TO-220AB Package

• High Commutating dI/dt − 2.5 A/ms minimum at 125°C

• Internally Isolated (2500 V

• These are Pb−Free Devices

RMS

)

http://onsemi.com

TRIACS

12 AMPERES RMS

600 thru 800 VOLTS

MT2

4

MT1

G

MARKING
DIAGRAM

MAXIMUM RATINGS (T

Rating

Peak Repetitive Off−State Voltage (Note 1)
(T

= −40 to 125°C, Sine Wave,

J

50 to 60 Hz, Gate Open)

On-State RMS Current
(Full Cycle Sine Wave, 60 Hz, T

Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
T

= 25°C)

C

Circuit Fusing Consideration (t = 8.3 ms) I2t 46 A2sec

Non−Repetitive Surge Peak Off−State
Voltage (T

Peak Gate Current (TJ = 125°C, t = 20ms) I

Peak Gate Power
(Pulse Width ≤ 1.0 ms, T

Average Gate Power (TJ = 125°C) P

Operating Junction Temperature Range T

Storage Temperature Range T

RMS Isolation Voltage
(t = 300 ms, R.H. ≤ 30%, T

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. V
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.

= 25°C, t = 10ms)

J

and V

DRM

for all types can be applied on a continuous basis. Blocking

RRM

= 25°C unless otherwise noted)

J

Symbol Value Unit

V

DRM,

V

RRM

BTA12−600BW3G
BTA12−800BW3G

I

T(RMS)

I

TSM

V

DSM/

V

RSM

GM

P

GM

G(AV)

J

stg

V

iso

= 80°C)

C

= 25°C)

A

= 80°C)

C

600
800

12 A

105 A

V

DSM/VRSM

+100

4.0 A

20 W

1.0 W

−40 to +125 °C

−40 to +150 °C

2500 V

V

V

TO−220AB

1

2

3

x = 6 or 8
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package

CASE 221A

STYLE 12

PIN ASSIGNMENT

1

2

3 Gate

4

Main Terminal 1

Main Terminal 2

No Connection

ORDERING INFORMATION

Device Package Shipping

BTA12−600BW3G TO−220AB

BTA12−800BW3G TO−220AB

(Pb−Free)

(Pb−Free)

BTA12−xBWG

AYWW

50 Units / Rail

50 Units / Rail

© Semiconductor Components Industries, LLC, 2008

August, 2008 − Rev. 0

*For additional information on our Pb−Free strategy and

soldering details, please download the ON Semicon­ductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.

1 Publication Order Number:

BTA12−600BW3/D

BTA12−600BW3G, BTA12−800BW3G

THERMAL CHARACTERISTICS

Characteristic Symbol Value Unit

Thermal Resistance, Junction−to−Case (AC)

Junction−to−Ambient

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds T

R

q

JC

R

q

JA

L

2.5
60

260 °C

°C/W

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted; Electricals apply in both directions)

J

Characteristic

OFF CHARACTERISTICS

Peak Repetitive Blocking Current

(VD = Rated V

DRM

, V

; Gate Open) TJ = 25°C

RRM

ON CHARACTERISTICS

Peak On-State Voltage (Note 2)

(ITM = ± 17 A Peak)

Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 W)

MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)

Holding Current

(V

= 12 V, Gate Open, Initiating Current = ±100 mA)

D

Latching Current (VD = 12 V, IG = 60 mA)

MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)

Gate Trigger Voltage (VD = 12 V, RL = 30 W)

MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)

Gate Non−Trigger Voltage (TJ = 125°C)

MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)

DYNAMIC CHARACTERISTICS

Rate of Change of Commutating Current, See Figure 10.

(Gate Open, T

= 125°C, No Snubber)

J

Critical Rate of Rise of On−State Current

(T

= 125°C, f = 120 Hz, I

J

= 2 x IGT, tr ≤ 100 ns)

G

Critical Rate of Rise of Off-State Voltage

(V

= 0.66 x V

D

, Exponential Waveform, Gate Open, TJ = 125°C)

DRM

2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

= 125°C

T

J

Symbol Min Typ Max Unit

I

,

DRM

I

RRM

V

TM

I

GT

I

H

I

L

V

GT

V

GD

(dI/dt)

c

−

−

−

−

− − 1.55 V

2.5

2.5

2.5

−

−

−

− − 50 mA

−

−

−

0.5

0.5

0.5

0.2

0.2

0.2

−

−

−

−

−

−

−

−

−

2.5 − − A/ms

dI/dt − − 50

dV/dt 2000 − −

0.005

2.0

50
50
50

70
80
70

1.7

1.1

1.1

−

−

−

mA

mA

mA

V

V

A/ms

V/ms

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