ON Semiconductor BSV52LT1 Datasheet
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Switching Transistor
NPN Silicon
1
BASE
COLLECTOR
3
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by BSV52LT1/D
BSV52LT1
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Collector Current — Continuous I
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature TJ, T
(2)
TA = 25°C
(1)
DEVICE MARKING
BSV52LT1 = B2
CEO
CBO
P
R
P
R
2
EMITTER
1
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
12 Vdc
20 Vdc
C
D
q
JA
D
q
JA
stg
100 mAdc
225
1.8
556 °C/W
300
2.4
417 °C/W
–55 to +150 °C
mW
mW/°C
mW
mW/°C
3
2
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 1.0 mAdc)
Collector Cutoff Current
(VCB = 10 Vdc, IE = 0)
(VCB = 10 Vdc, IE = 0, TA = 125°C)
1. FR–5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
Symbol Min Max Unit
V
(BR)CEO
I
CBO
12 —
—
—
100
5.0
Vdc
nAdc
µAdc
1
BSV52LT1
ELECTRICAL CHARACTERISTICS (continued) (T
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
Collector–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 300 µAdc)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 1.0 Vdc, IC = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Storage Time
(IC = IB1 = IB2 = 10 mAdc)
Turn–On Time
(VBE = 1.5 Vdc, IC = 10 mAdc, IB = 3.0 mAdc)
Turn–Off Time
(IC = 10 mAdc, IB = 3.0 mAdc)
= 25°C unless otherwise noted)
A
H
V
CE(sat)
V
BE(sat)
f
C
obo
C
t
t
on
t
off
FE
T
ibo
s
25
40
25
—
—
—
700
—
400 —
— 4.0
— 4.5
— 13
— 12
— 18
120
300
250
400
850
1200
—
—
—
mVdc
mVdc
MHz
pF
pF
ns
ns
ns
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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