ON Semiconductor BSS64LT1 Datasheet
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
1
BASE
COLLECTOR
3
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by BSS64LT1/D
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature TJ, T
(2)
TA = 25°C
(1)
DEVICE MARKING
BSS64LT1 = AM
CEO
CBO
EBO
P
R
P
R
2
EMITTER
1
80 Vdc
120 Vdc
5.0 Vdc
C
D
q
JA
D
q
JA
stg
100 mAdc
225
1.8
556 °C/W
300
2.4
417 °C/W
–55 to +150 °C
mW
mW/°C
mW
mW/°C
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
3
2
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 4.0 mAdc)
Collector–Base Breakdown Voltage
(IC = 100 mAdc)
Emitter–Base Breakdown Voltage
(IE = 100 mAdc)
Collector Cutoff Current
(VCE = 90 Vdc)
(TA = 150°C)
Emitter Cutoff Current
(VEB = 4.0 Vdc)
1. FR–5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company.
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
Symbol Min Max Unit
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
80 —
120 —
5.0 —
—
—
— 200
0.1
500
Vdc
Vdc
Vdc
µAdc
nAdc
1
BSS64LT1
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (Continued)
A
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(VCE = 1.0 Vdc, IC = 10 mAdc)
Collector–Emitter Saturation Voltage
(IC = 4.0 mAdc, IB = 400 µAdc)
(IC = 50 mAdc, IB = 15 mAdc)
Forward Base–Emitter Voltage V
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 4.0 mAdc, VCE = 10 Vdc, f = 20 MHz)
Output Capacitance
(VCB = 10 Vdc, f = 1.0 MHz)
H
V
CE(sat)
BE(sat)
f
C
FE
T
ob
20 —
—
—
— — —
60 —
— 20
0.15
0.2
Vdc
MHz
pF
—
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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