ON Semiconductor BSS63LT1 Datasheet
SEMICONDUCTOR TECHNICAL DATA
PNP Silicon
1
BASE
COLLECTOR
3
Order this document
by BSS63LT1/D
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Emitter Voltage
RBE = 10 kΩ
Collector Current — Continuous I
V
CEO
CER
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature TJ, T
(2)
TA = 25°C
(1)
P
R
P
R
DEVICE MARKING
BSS63LT1 = T1
ELECTRICAL CHARACTERISTICS (T
Characteristic
= 25°C unless otherwise noted)
A
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –100 µAdc)
Collector–Emitter Breakdown Voltage
(IC = –10 µAdc, IE = 0, RBE = 10 kΩ)
Collector–Base Breakdown Voltage
(IE = –10 mAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = –10 mAdc)
Collector Cutoff Current
(VCB = –90 Vdc, IE = 0)
Collector Cutoff Current
(VCE = –110 Vdc, RBE = 10 kΩ)
Emitter Cutoff Current
(VEB = –6.0 Vdc, IC = 0)
1. FR–5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company.
2
EMITTER
1
–100 Vdc
–110
C
D
q
JA
D
q
JA
stg
–100 mAdc
225
1.8
556 °C/W
300
2.4
417 °C/W
–55 to +150 °C
Vdc
mW
mW/°C
mW
mW/°C
Symbol Min Typ Max Unit
V
(BR)CEO
V
(BR)CER
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CER
I
EBO
–100 — —
–110 — —
–110 — —
–6.0 — —
— — –100
— — –10
— — –200
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
3
2
Vdc
Vdc
Vdc
Vdc
nAdc
µAdc
nAdc
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
1
BSS63LT1
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
(TA = 25°C unless otherwise noted) (Continued)
ON CHARACTERISTICS
DC Current Gain
(IC = –10 mAdc, VCE = –1.0 Vdc)
(IC = –25 mAdc, VCE = –1.0 Vdc)
Collector–Emitter Saturation Voltage
(IC = –25 mAdc, IB = –2.5 mAdc)
Base–Emitter Saturation Voltage
(IC = –25 mAdc, IB = –2.5 mAdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = –25 mAdc, VCE = –5.0 Vdc, f = 20 MHz)
Case Capacitance
(IE = IC = 0, VCB = –10 Vdc, f = 1.0 MHz)
h
FE
V
CE(sat)
V
BE(sat)
f
C
30
30
— — –250
— — –900
T
C
50 95 —
— — 20
—
—
—
—
—
mVdc
mVdc
MHz
pF
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Loading...