ON Semiconductor BSP19AT1 Datasheet
SEMICONDUCTOR TECHNICAL DATA
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by BSP19AT1/D
This family of NPN Silicon Epitaxial transistors is designed for use as a general
purpose amplifier and in switching applications. The device is housed in the SOT-223
package which is designed for medium power surface mount applications.
• High Voltage: V
(BR)CEO
• The SOT-223 package can be soldered using wave or reflow.
• SOT-223 package ensures level mounting, resulting in improved thermal
conduction, and allows visual inspection of soldered joints. The formed
leads absorb thermal stress during soldering, eliminating the possibility of
damage to the die
• Available in 12 mm Tape and Reel
T1 Configuration – 7 inch/1000 unit reel
T3 Configuration – 13 inch/4000 unit reel
• PNP Complement is BSP16T1
MAXIMUM RATINGS
Collector-Emitter Voltage (Open Base) V
Collector-Base Voltage (Open Emitter) V
Emitter-Base Voltage (Open Collector) V
Collector Current (DC) I
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Storage Temperature Range T
Junction Temperature T
DEVICE MARKING
SP19A
THERMAL CHARACTERISTICS
Thermal Resistance from Junction-to-Ambient R
Maximum Temperature for Soldering Purposes
Time in Solder Bath
1. Device mounted on a FR-4 glass epoxy printed circuit board using minimum recommended footprint.
of 250 and 350 Volts.
(T
= 25°C unless otherwise noted)
C
Rating
(1)
Characteristic Symbol Max Unit
COLLECTOR 2,4
BASE
1
EMITTER 3
Symbol Value Unit
CEO
CBO
EBO
P
stg
θJA
T
Motorola Preferred Device
SOT–223 PACKAGE
NPN SILICON
HIGH VOLTAGE
TRANSISTOR
SURFACE MOUNT
4
1
2
3
CASE 318E-04, STYLE 1
TO-261AA
350 Vdc
400 Vdc
5.0 Vdc
C
D
J
L
1000 mAdc
0.8
6.4
–65 to 150 °C
150 °C
156 °C/W
260
10
Watts
mW/°C
°C
Sec
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1997
1
BSP19AT1
ELECTRICAL CHARACTERISTICS
(continued) (T
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector-Base Cutoff Current
(VCB = 400 Vdc, IE = 0)
Emitter-Base Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (2)
DC Current Gain
(IC = 20 mAdc, VCE = 10 Vdc)
Current-Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 5.0 MHz)
Collector-Emitter Saturation Voltage
(IC = 50 mAdc, IB = 4.0 mAdc)
Base-Emitter Saturation Voltage
(IC = 50 mAdc, IB = 4.0 mAdc)
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle = 2.0%
= 25°C unless otherwise noted)
A
Symbol Min Max Unit
V
(BR)CEO
I
CBO
I
EBO
h
FE
f
T
V
CE(sat)
V
BE(sat)
350 —
— 20
— 10
40 —
70 —
— 0.5
— 1.3
Vdc
nAdc
µAdc
—
MHz
Vdc
Vdc
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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