ON Semiconductor BF959ZL1, BF959RL1, BF959 Datasheet
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
20 Vdc
Collector–Base Voltage V
CBO
30 Vdc
Emitter–Base Voltage V
EBO
3.0 Vdc
Collector Current — Continuous I
C
100 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
P
D
1.5
12
Watt
mW/°C
Operating and Storage Junction
Temperature Range
TJ, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
R
q
JA
200 °C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V
(BR)CEO
20 — — Vdc
Collector–Base Breakdown Voltage (IC = 10 mAdc, IE = 0)
V
(BR)CBO
30 — — Vdc
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
V
(BR)EBO
3.0 — — Vdc
Collector Cutoff Current (VCB = 20 Vdc, IE = 0) I
CBO
— — 100 nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 5.0 mAdc, VCE = 10 Vdc)
(IC = 20 mAdc, VCE = 10 Vdc)
h
FE
35
40
—
—
—
—
—
Collector–Emitter Saturation Voltage (IC = 30 mAdc, IB = 2.0 mAdc) V
CE(sat)
— — 1.0 Vdc
Base–Emitter Saturation Voltage (IC = 30 mAdc, IB = 2.0 mAdc) V
BE(sat)
— — 1.0 Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
(IC = 30 mAdc, VCE = 10 Vdc, f = 100 MHz)
f
T
700
600
—
—
—
—
MHz
Common Emitter Feedback Capacitance
(VCB = 10 Vdc, Pf = 0, f = 10 MHz)
C
re
— 0.65 — pF
Noise Figure (IC = 4.0 mA, VCE = 10 V, RS = 50 Ω, f = 200 MHz) N
f
— 3.0 — dB
Order this document
by BF959/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 21
TO–92 (TO–226AA)
1
2
3
Motorola, Inc. 1996
COLLECTOR
1
3
BASE
2
EMITTER
BF959
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 1. hFE at 10 V
IC, COLLECTOR CURRENT (mA)
30
50
200
500
1000
10
1
Figure 2. V
CE(sat)
at IC/IB = 10
IC, COLLECTOR CURRENT (mA)
10 20 30 502 3 4 5
h
FE
, DC CURRENT GAIN
100
40
20
100
30
50
200
500
10
1 10 20 30 502 3 4 5
100
40
20
Figure 3. Current–Gain — Bandwidth Product
IC, COLLECTOR CURRENT (mA)
0.8
1.2
1.6
1.8
2.0
0.4
1
Figure 4. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10 20 30 502 3 4 5
1.4
1
0.6
100 1 10 20 30 502 3 4 5 100
f , CURRENT–GAIN — BANDWIDTH PRODUCT (GHz)
T
C, CAPACITANCE (pF)
0.8
1.2
1.6
1.8
0.4
1.4
1
0.6
0.2
Figure 5. Input Impedance at 30 MHz
IC, COLLECTOR CURRENT (mA)
0.3
0.5
2
5
10
0.1
1
Figure 6. Output Impedance at 30 MHz
IC, COLLECTOR CURRENT (mA)
10 20 30 502 3 4 5
1
0.4
0.2
100 1 10 20 30 502 3 4 5
Y11e (ms)
40
100
300
500
20
200
50
30
10
Y22e ( s)
µ
3
4
mV
5 V
10 V
2 V
C
ob
C
ib
C
re
VCE = 10 V
g11e
b11e
VCE = 10 V
b22e
g22e
40
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