ON Semiconductor BF721T1 Datasheet
SEMICONDUCTOR TECHNICAL DATA
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by BF721T1/D
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage V
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current I
Total Power Dissipation up to
TA = 25°C
Storage Temperature Range T
Junction Temperature T
(1)
DEVICE MARKING
DF
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance from Junction to
Ambient
(1)
CEO
CBO
CER
EBO
P
R
C
D
stg
J
θJA
COLLECTOR 2,4
BASE
1
EMITTER 3
–300 Vdc
–300 Vdc
–300 Vdc
–5.0 Vdc
–100 mAdc
1.5 Watts
–65 to +150 °C
150 °C
83.3 °C/W
Motorola Preferred Device
PNP SILICON
TRANSISTOR
SURFACE MOUNT
4
1
2
3
CASE 318E-04, STYLE 1
SOT–223 (TO-261AA)
ELECTRICAL CHARACTERISTICS (T
Characteristic
= 25°C unless otherwise noted)
A
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = –1.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(IC = –100 µAdc, IE = 0)
Collector-Emitter Breakdown Voltage
(IC = –100 µAdc, RBE = 2.7 kΩ)
Emitter-Base Breakdown Voltage
(IE = –10 µAdc, IC = 0)
Collector-Base Cutoff Current
(VCB = –200 Vdc, IE = 0)
Collector–Emitter Cutoff Current
(VCE = –250 Vdc, RBE = 2.7 kΩ)
(VCE = –200 Vdc, RBE = 2.7 kΩ, TJ = 150°C)
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in2.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 4
V
(BR)CEO
V
(BR)CBO
V
(BR)CER
V
(BR)EBO
I
CBO
I
CER
–300 — Vdc
–300 — Vdc
–300 — Vdc
–5.0 — Vdc
— –10 nAdc
—
—
–50
–10
nAdc
µAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1998
1
BF721T1
ELECTRICAL CHARACTERISTICS
Characteristic
ON CHARACTERISTICS
DC Current Gain
(VCE = –25 mAdc, VCE = –20 Vdc)
Collector-Emitter Saturation Voltage
(IC = –30 mAdc, IB = –5.0 mAdc)
DYNAMIC CHARACTERISTICS
Current-Gain — Bandwidth Product
(VCE = –10 Vdc, IC = –10 mAdc, f = 35 MHz)
Feedback Capacitance
(VCE = –30 Vdc, IC = 0, f = 1.0 MHz)
(T
= 25°C unless otherwise noted) (Continued)
A
Symbol Min Max Unit
h
FE
V
CE(sat)
f
C
T
re
50 — —
— –0.8 Vdc
60 — MHz
— 1.6 pF
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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