ON Semiconductor 33179 Technical data

MC33178, MC33179

Low Power, Low Noise Operational Amplifiers

The MC33178/9 series is a family of high quality monolithic amplifiers employing Bipolar technology with innovative high performance concepts for quality audio and data signal processing applications. This device family incorporates the use of high frequency PNP input transistors to produce amplifiers exhibiting low input offset voltage, noise and distortion. In addition, the amplifier provides high output current drive capability while consuming only 420 A of drain current per amplifier. The NPN output stage used, exhibits no deadband crossover distortion, large output voltage swing, excellent phase and gain margins, low open−loop high frequency output impedance, symmetrical source and sink AC frequency performance.

The MC33178/9 family offers both dual and quad amplifier versions, and is available in DIP and SOIC packages.

Features

• 600  Output Drive Capability

• Large Output Voltage Swing

• Low Offset Voltage: 0.15 mV (Mean)

• Low T.C. of Input Offset Voltage: 2.0 V/°C

• Low Total Harmonic Distortion: 0.0024%

(@ 1.0 kHz w/600  Load)

• High Gain Bandwidth: 5.0 MHz

• High Slew Rate: 2.0 V/s

• Dual Supply Operation: ±2.0 V to ±18 V

• ESD Clamps on the Inputs Increase Ruggedness without Affecting

Device Performance

• Pb−Free Packages are Available

V

CC

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DUAL

8

1

8

1

8

1

QUAD

14

1

14

1

PDIP−8

P SUFFIX

CASE 626

SOIC−8

D SUFFIX

CASE 751

Micro8 DM SUFFIX CASE 846A

PDIP−14

P SUFFIX

CASE 646

SOIC−14

D SUFFIX

CASE 751A

I

ref

−

V

in

V

EE

Figure 1. Representative Schematic Diagram

(Each Amplifier)

 Semiconductor Components Industries, LLC, 2005

March, 2005 − Rev. 5

Vin +

I

ref

C

M

V

1 Publication Order Number:

See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.

O

See general marking information in the device marking section on page 4 of this data sheet.

ORDERING INFORMATION

DEVICE MARKING INFORMATION

MC33178/D

MC33178, MC33179

MAXIMUM RATINGS

Rating Symbol Value Unit

Supply Voltage (VCC to V

EE)

Input Differential Voltage Range V Input Voltage Range V Output Short Circuit Duration (Note 2) t Maximum Junction Temperature T Storage Temperature Range T Maximum Power Dissipation P Operating Temperature Range T

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously . If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

1. Either or both input voltages should not exceed V

2. Power dissipation must be considered to ensure maximum junction temperature (T

or VEE.

CC

characteristic, Figure 2.)

V

S

IDR

IR

SC

J

stg

D

A

) is not exceeded. (See power dissipation performance

J

+36 V Note 1 V Note 1 V

Indefinite sec

+150 °C

−60 to +150 °C Note 2 mW

−40 to +85 °C

ORDERING INFORMATION

Device Package Shipping

MC33178D SOIC−8 98 Units / Rail MC33178DG SOIC−8

(Pb−Free)

98 Units / Rail

MC33178DR2 SOIC−8 2500 / Tape & Reel MC33178DR2G SOIC−8

(Pb−Free)

2500 / Tape & Reel

MC33178P PDIP−8 1000 Units / Rail MC33178PG PDIP−8

(Pb−Free)

1000 Units / Rail

MC33178DMR2 Micro8 4000 / Tape & Reel MC33179D SOIC−14 55 Units / Rail MC33179DG SOIC−14

(Pb−Free)

55 Units / Rail

MC33179DR2 SOIC−14 2500 / Tape & Reel MC33179DR2G SOIC−14

(Pb−Free)

2500 / Tape & Reel

MC33179P PDIP−14 500 Units / Rail MC33179PG PDIP−14

(Pb−Free)

500 Units / Rail

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

†

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2

MC33178, MC33179

MARKING DIAGRAMS

DUAL QUAD

PDIP−8

CASE 626

8

MC33178P

AWL

YYWW

1

Micro8

CASE 846A

8

3178 AYW

1

CASE 751

8

1

DUAL

CASE 626/751/846A

SOIC−8

14

33178 ALYW

A = Assembly Location WL, L = Wafer Lot YY, Y = Year WW, W = Work Week

PIN CONNECTIONS

PDIP−14

CASE 646

MC33179P

AWLYYWW

1

SOIC−14

CASE 751A

14

MC33179D

AWLYWW

1

QUAD

CASE 646/751A

Output 1

Inputs 1

−

+

8

V

7

Output 2

6 5

CC

Inputs 2

Output 1

Inputs 1

V

Inputs 2

Output 2

1

2

−− 1

++

3

4

CC

5

++

23

−−

6

78

14

Output 4

13

4

Inputs 4

12

11

V

EE

10

Inputs 3

9

Output 3

1

2

− +

3 4

V

EE

(Top View)

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3

MC33178, MC33179

DC ELECTRICAL CHARACTERISTICS (V

Characteristics

Input Offset Voltage (RS = 50 , VCM = 0 V, VO = 0 V)

(V

= +2.5 V, VEE = −2.5 V to VCC = +15 V, VEE = −15 V)

CC

= +25°C

T

A

T

= −40° to +85°C

A

Average Temperature Coefficient of Input Offset Voltage

= 50 , VCM = 0 V, VO = 0 V)

(R

S

T

= −40° to +85°C

A

Input Bias Current (VCM = 0 V, VO = 0 V)

T

= +25°C

A

= −40° to +85°C

T

A

Input Offset Current (VCM = 0 V, VO = 0 V)

= +25°C

T

A

T

= −40° to +85°C

A

Common Mode Input Voltage Range

(V

= 5.0 mV, VO = 0 V)

IO

Large Signal Voltage Gain (VO = −10 V to +10 V, RL = 600 )

= +25°C

T

A

= −40° to +85°C

T

A

Output Voltage Swing (VID = ±1.0 V)

(V

= +15 V, VEE = −15 V)

CC

= 300 

R

L

R

= 300 

L

= 600 

R

L

= 600 

R

L

R

= 2.0 k

L

= 2.0 k

R

L

(V

= +2.5 V, VEE = −2.5 V)

CC

= 600 

R

L

= 600 

R

L

= +15 V, VEE = −15 V, TA = 25°C, unless otherwise noted.)

CC

Figure Symbol Min Typ Max Unit

3 |VIO|

−

3 VIO/T

− 2.0 −

4, 5 I

IB

−

|IIO|

−

6 V

ICR

−13

−

7, 8 A

VOL

50 25

9, 10, 11

VO+ V

O

V

O

V

O

V

O

V

O

V

O

V

O

− +

−

+

−

+12

−

+13

−

1.1

−

0.15

−

100

−

5.0

−

−14 +14

200

−

+12

−12

+13.6

−13 +14

−13.8

1.6

−1.6

3.0

4.0 V/°C

500 600

50 60

−

+13

−

−12

−

−13

−

−1.1 Common Mode Rejection (Vin = ±13 V) 12 CMR 80 110 − dB Power Supply Rejection

V

= +15 V/ −15 V, +5.0 V/ −15 V, +15 V/ −5.0 V

CC/VEE

Output Short Circuit Current (VID = ±1.0 V, Output to Ground)

Source (V Sink (V

= 2.5 V to 15 V)

CC

= −2.5 V to −15 V)

EE

Power Supply Current (VO = 0 V)

(V

= 2.5 V, VEE = −2.5 V to VCC = +15 V, VEE = −15 V)

CC

13 PSR

14, 15 I

16 I

SC

80 110 −

+50

−50

D

+80

−100

−

MC33178 (Dual)

= +25°C

T

A

= −40° to +85°C

T

A

−

1.4

1.6

MC33179 (Quad)

= +25°C

T

A

= −40° to +85°C

T

A

−

1.7

−

2.6

2.4

mV

nA

V

kV/V

V

dB

mA

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4

MC33178, MC33179

AC ELECTRICAL CHARACTERISTICS (V

= +15 V, VEE = −15 V, TA = 25°C, unless otherwise noted.)

CC

Characteristics Figure Symbol Min Typ Max Unit

Slew Rate

(V

= −10 V to +10 V, RL = 2.0 k, CL = 100 pF, AV = +1.0 V)

in

17, 32 SR

1.2 2.0 −

V/s

Gain Bandwidth Product (f = 100 kHz) 18 GBW 2.5 5.0 − MHz AC Voltage Gain (RL = 600 , VO = 0 V, f = 20 kHz) 19, 20 A

VO

− 50 − dB Unity Gain Bandwidth (Open−Loop) (RL = 600 , CL = 0 pF) BW − 3.0 − MHz Gain Margin (RL = 600 , CL = 0 pF) 21, 23, 24 A Phase Margin (RL = 600 , CL = 0 pF) 22, 23, 24 

m

− 15 − dB

− 60 − Deg Channel Separation (f = 100 Hz to 20 kHz) 25 CS − −120 − dB Power Bandwidth (VO = 20 V Total Harmonic Distortion (RL = 600 ,, VO = 2.0 Vpp, AV = +1.0 V)

(f = 1.0 kHz) (f = 10 kHz) (f = 20 kHz)

Open Loop Output Impedance

(V

= 0 V, f = 3.0 MHz, AV = 10 V)

O

Differential Input Resistance (VCM = 0 V) R Differential Input Capacitance (VCM = 0 V) C Equivalent Input Noise Voltage (RS = 100 ,)

f = 10 Hz f = 1.0 kHz

Equivalent Input Noise Current

f = 10 Hz f = 1.0 kHz

= 600 , THD ≤ 1.0%) BW

pp, RL

26 THD

27 |ZO|

28 e

29 i

p

− 32 − kHz

−

0.0024

−

0.014

−

0.024

−

− 150 −

in in n

n

− 200 − k

− 10 − pF

nV/ Hz√

−

8.0

7.5

−

− pA/ Hz√

−

0.33

−

0.15

−

%



2400

2000

MC33178P/9P

1600

MC33179D

1200

800

MC33178D

400

D

0

P(MAX), MAXIMUM POWER DISSIPATION (mW)

−60 −40 −20 0 20 40 60 80 100 120 180160140 T

, AMBIENT TEMPERATURE (°C)

A

Figure 2. Maximum Power Dissipation

versus Temperature

4.0

3.0

2.0 Unit 1

VCC = +15 V VEE = −15 V RS = 10  VCM = 0 V

1.0

0

Unit 2

Unit 3

−1.0

−2.0

−3.0

IO

V, INPUT OFFSET VOLTAGE (mV)

−4.0

−55 −25 0 25 50 75 100 125 T

, AMBIENT TEMPERATURE (°C)

A

Figure 3. Input Offset Voltage versus

Temperature for 3 Typical Units

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