1N5913B Series
l
n
3 W DO−41 Surmetict 30
Zener Voltage Regulators
This is a complete series of 3 W Zener diodes with limits and
excellent operating characteristics that reflect the superior capabilities
of silicon−oxide passivated junctions. All this in an axial−lead,
transfer−molded plastic package that offers protection in all common
environmental conditions.
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Features
• Zener Voltage Range − 3.3 V to 200 V
• ESD Rating of Class 3 (>16 KV) per Human Body Model
• Surge Rating of 98 W @ 1 ms
• Maximum Limits Guaranteed on up to Six Electrical Parameters
• Package No Larger than the Conventional 1 W Package
• Pb−Free Packages are Available
Mechanical Characteristics
CASE: Void free, transfer−molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
260°C, 1/16″ from the case for 10 seconds
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
MAXIMUM RATINGS
Rating Symbol Value Unit
Max. Steady State Power Dissipation
@ TL = 75°C, Lead Length = 3/8″
Derate above 75°C
Steady State Power Dissipation
@ TA = 50°C
Derate above 50°C
Operating and Storage
Temperature Range
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
P
P
TJ, T
D
D
stg
3
24
1
6.67
−65 to
+200
W
mW/°C
W
mW/°C
°C
Cathode Anode
AXIAL LEAD
CASE 59
PLASTIC
STYLE 1
MARKING DIAGRAM
A
1N
59xxB
YYWWG
G
A = Assembly Location
1N59xxB = Device Number
YY = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package Shipping
1N59xxB, G Axial Lead
(Pb−Free)
1N59xxBRL, G Axial Lead
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specificatio
Brochure, BRD8011/D.
2000 Units/Box
6000/Tape & Ree
†
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 5
1 Publication Order Number:
1N5913B/D
1N5913B Series
ELECTRICAL CHARACTERISTICS
(TL = 30°C unless otherwise noted,
VF = 1.5 V Max @ IF = 200 mAdc for all types)
Symbol Parameter
V
I
ZT
Z
I
ZK
Z
I
V
I
V
I
ZM
Reverse Zener Voltage @ I
Z
Reverse Current
Maximum Zener Impedance @ I
ZT
Reverse Current
Maximum Zener Impedance @ I
ZK
Reverse Leakage Current @ V
R
Breakdown Voltage
R
Forward Current
F
Forward Voltage @ I
F
Maximum DC Zener Current
ZT
R
F
ZT
ZK
I
I
F
VRV
Z
I
V
R
I
ZT
Zener Voltage Regulator
V
F
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2
1N5913B Series
ELECTRICAL CHARACTERISTICS (T
= 30°C unless otherwise noted, VF = 1.5 V Max @ IF = 200 mAdc for all types)
L
Zener Voltage (Note 2) Zener Impedance (Note 3) Leakage Current
Device
(Note 1)
†
Device
Marking
VZ (Volts) @ I
Min Nom Max mA
ZTZZT
@ I
ZT
W W
ZZK @ I
ZK
mA
IR @ V
mA Max
R
I
ZM
Volts mA
1N5913B, G 1N5913B 3.14 3.3 3.47 113.6 10 500 1 100 1 454
1N5917B, G 1N5917B 4.47 4.7 4.94 79.8 5 500 1 5 1.5 319
1N5919B, G 1N5919B 5.32 5.6 5.88 66.9 2 250 1 5 3 267
1N5920B, G 1N5920B 5.89 6.2 6.51 60.5 2 200 1 5 4 241
1N5921B, G 1N5921B 6.46 6.8 7.14 55.1 2.5 200 1 5 5.2 220
1N5923B, G 1N5923B 7.79 8.2 8.61 45.7 3.5 400 0.5 5 6.5 182
1N5924B, G 1N5924B 8.65 9.1 9.56 41.2 4 500 0.5 5 7 164
1N5925B, G 1N5925B 9.50 10 10.50 37.5 4.5 500 0.25 5 8 150
1N5926B, G 1N5926B 10.45 11 11.55 34.1 5.5 550 0.25 1 8.4 136
1N5927B, G 1N5927B 11.40 12 12.60 31.2 6.5 550 0.25 1 9.1 125
1N5929B, G 1N5929B 14.25 15 15.75 25.0 9 600 0.25 1 11.4 100
1N5930B, G 1N5930B 15.20 16 16.80 23.4 10 600 0.25 1 12.2 93
1N5931B, G 1N5931B 17.10 18 18.90 20.8 12 650 0.25 1 13.7 83
1N5932B, G 1N5932B 19.00 20 21.00 18.7 14 650 0.25 1 15.2 75
1N5933B, G 1N5933B 20.90 22 23.10 17.0 17.5 650 0.25 1 16.7 68
1N5934B, G 1N5934B 22.80 24 25.20 15.6 19 700 0.25 1 18.2 62
1N5935B, G 1N5935B 25.65 27 28.35 13.9 23 700 0.25 1 20.6 55
1N5936B, G 1N5936B 28.50 30 31.50 12.5 28 750 0.25 1 22.8 50
1N5937B, G 1N5937B 31.35 33 34.65 11.4 33 800 0.25 1 25.1 45
1N5938B, G 1N5938B 34.20 36 37.80 10.4 38 850 0.25 1 27.4 41
1N5940B, G 1N5940B 40.85 43 45.15 8.7 53 950 0.25 1 32.7 34
1N5941B, G 1N5941B 44.65 47 49.35 8.0 67 1000 0.25 1 35.8 31
1N5942B, G 1N5942B 48.45 51 53.55 7.3 70 1100 0.25 1 38.8 29
1N5943B, G 1N5943B 53.20 56 58.80 6.7 86 1300 0.25 1 42.6 26
1N5944B, G 1N5944B 58.90 62 65.10 6.0 100 1500 0.25 1 47.1 24
1N5946B, G 1N5946B 71.25 75 78.75 5.0 140 2000 0.25 1 56 20
1N5947B, G 1N5947B 77.90 82 86.10 4.6 160 2500 0.25 1 62.2 18
1N5948B, G 1N5948B 86.45 91 95.55 4.1 200 3000 0.25 1 69.2 16
1N5950B, G 1N5950B 104.5 110 115.5 3.4 300 4000 0.25 1 83.6 13
1N5951B, G 1N5951B 114 120 126 3.1 380 4500 0.25 1 91.2 12
1N5952B, G 1N5952B 123.5 130 136.5 2.9 450 5000 0.25 1 98.8 11
1N5953B, G 1N5953B 142.5 150 157.5 2.5 600 6000 0.25 1 114 10
1N5954B, G 1N5954B 152 160 168 2.3 700 6500 0.25 1 121.6 9
1N5955B, G 1N5955B 171 180 189 2.1 900 7000 0.25 1 136.8 8
1N5956B, G 1N5956B 190 200 210 1.9 1200 8000 0.25 1 152 7
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.
†The “G’’ suffix indicates Pb−Free package available.
1. TOLERANCE AND TYPE NUMBER DESIGNATION
Tolerance designation − device tolerance of ±5% are indicated by a “B” suffix.
2. ZENER VOLTAGE (VZ) MEASUREMENT
ON Semiconductor guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (TL) at 30°C ±1°C,
3/8″ from the diode body.
3. ZENER IMPEDANCE (ZZ) DERIVATION
The zener impedance is derived from 60 seconds AC voltage, which results when an AC current having an rms value equal to 10% of the
DC zener current (IZT or IZK) is superimposed on IZT or IZK.
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3
1N5913B Series
5
L = LEAD LENGTH
L = 1/8″
TO HEAT SINK
4
3
2
L = 3/8″
L = 1″
1
0
, STEADY STATE DISSIPATION (WATTS)
0 20 40 60 20080 100 120 140 160 180
D
P
TL, LEAD TEMPERATURE (°C)
Figure 1. Power Temperature Derating Curve
30
20
D =0.5
10
0.2
7
5
0.1
JUNCTION-TO-LEAD ( C/W)°
0.7
0.5
(t, D) TRANSIENT THERMAL RESISTANCE
JL
0.3
θ
3
0.05
2
0.02
1
0.01
D = 0
NOTE: BELOW 0.1 SECOND, THERMAL
RESPONSE CURVE IS APPLICABLE
TO ANY LEAD LENGTH (L).
SINGLE PULSE DTJL = qJL (t)P
REPETITIVE PULSES DTJL = qJL (t,D)P
t
P
1
PK
t
2
DUTY CYCLE, D =t1/t
PK
0.0001 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
t, TIME (SECONDS)
Figure 2. Typical Thermal Response L, Lead Length = 3/8 Inch
2
PK
1K
RECTANGULAR
500
300
200
NONREPETITIVE
WAVEFORM
TJ=25°C PRIOR
TO INITIAL PULSE
100
50
30
PK
20
P , PEAK SURGE POWER (WATTS)
10
0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100
PW, PULSE WIDTH (ms)
Figure 3. Maximum Surge Power Figure 4. Typical Reverse Leakage
R
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
, REVERSE LEAKAGE (μAdc) @ V
0.001
R
AS SPECIFIED IN ELEC. CHAR. TABLE
I
0.0005
0.0003
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4
3
2
1
TA = 125°C
TA = 125°C
1 2 5 10 20 50 100 200 400 1000
NOMINAL VZ (VOLTS)
APPLICATION NOTE
1N5913B Series
Since the actual voltage available from a given zener
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions
in order to calculate its value. The following procedure is
recommended:
Lead Temperature, TL, should be determined from:
TL = qLA PD + T
q
is the lead-to-ambient thermal resistance (°C/W) and
LA
A
PD is the power dissipation. The value for qLA will vary and
depends on the device mounting method. qLA is generally
30−40°C/W for the various clips and tie points in common
use and for printed circuit board wiring.
The temperature of the lead can also be measured using a
thermocouple placed on the lead as close as possible to the
tie point. The thermal mass connected to the tie point is
normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result of
pulsed operation once steady-state conditions are achieved.
Using the measured value of TL, the junction temperature
may be determined by:
TJ = TL + DT
JL
DTJL is the increase in junction temperature above the lead
temperature and may be found from Figure 2 for a train of
power pulses (L = 3/8 inch) or from Figure 10 for dc power.
DTJL = qJL P
D
For worst-case design, using expected limits of IZ, limits
of PD and the extremes of TJ (DTJ) may be estimated.
Changes in voltage, VZ, can then be found from:
DV = qVZ DT
q
, the zener voltage temperature coefficient, is found
VZ
J
from Figures 5 and 6.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current
excursions as low as possible.
Data of Figure 2 should not be used to compute surge
capability. S u rge limitations are given in Figure 3. They are
lower than would be expected by considering only junction
temperature, as current crowding effects cause temperatures
to be extremely high in small spots resulting in device
degradation should the limits of Figure 3 be exceeded.
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5
1N5913B Series
TEMPERATURE COEFFICIENT RANGES
(90% of the Units are in the Ranges Indicated)
ZTVZ
10
°θ
8
ZTVZ
°θ
1000
500
6
4
2
0
−2
, TEMPERATURE COEFFICIENT (mV/ C) @ I
−4
34 5 6 789101112
VZ, ZENER VOLTAGE @ IZT (VOLTS)
RANGE
Figure 5. Units To 12 Volts Figure 6. Units 10 To 400 Volts
ZENER VOLTAGE versus ZENER CURRENT
(Figures 7, 8 and 9)
100
50
30
20
10
5
3
2
1
Z
I , ZENER CURRENT (mA)
0.5
0.3
0.2
0.1
01 2 3 4 5 6 7 8910
VZ, ZENER VOLTAGE (VOLTS)
200
100
50
20
, TEMPERATURE COEFFICIENT (mV/ C) @ I
10
10 20 50 100 200 400 1000
VZ, ZENER VOLTAGE @ IZT (VOLTS)
100
50
30
20
10
5
3
2
1
Z
I , ZENER CURRENT (mA)
0.5
0.3
0.2
0.1
0 10 203040 50 607080 90100
VZ, ZENER VOLTAGE (VOLTS)
10
5
2
1
0.5
Z
I , ZENER CURRENT (mA)
0.2
0.1
100 200 300 400250 350150
Figure 7. V
VZ, ZENER VOLTAGE (VOLTS)
Figure 9. V
= 3.3 thru 10 Volts Figure 8. VZ = 12 thru 82 Volts
Z
= 100 thru 400 Volts Figure 10. Typical Thermal Resistance
Z
80
( C/W)°
70
60
50
40
30
20
10
0
0 1/8 1/4 3/8 1/2 5/8 3/4 7/8 1
, JUNCTION-TO-LEAD THERMAL RESISTANCE
JL
θ
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6
PRIMARY PATH OF
CONDUCTION IS THROUGH
THE CATHODE LEAD
L, LEAD LENGTH TO HEAT SINK (INCH)
LL
T
L
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
1N5913B Series
PACKAGE DIMENSIONS
AXIAL LEAD
CASE 59−10
ISSUE U
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
K
D
F
A
F
K
3. ALL RULES AND NOTES ASSOCIATED WITH
JEDEC DO−41 OUTLINE SHALL APPLY
4. POLARITY DENOTED BY CATHODE BAND.
5. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.
DIM MIN MAX MIN MAX
A 4.10 5.200.161 0.205
B 2.00 2.700.079 0.106
D 0.71 0.860.028 0.034
F −−− 1.27−−− 0.050
K 25.40 −−−1.000 −−−
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
MILLIMETERSINCHES
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7
1N5913B Series
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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1N5913B/D
8
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